• Journal of the Institute of Electronics Engineers of Korea SC
• /
• v.40 no.6
• /
• pp.39-47
• /
• 2003

This paper proposes the new narrow erase method to erase wall charges formed in an AC plasma display panel (PDP) cell. In the Proposed method, sustain switching timing is adjusted for inducing a weak discharge. Then, after the narrow erase, tile voltage of the X electrode is set to differ from that of the Y electrode. For the proposed method, the measured maximum address voltage margin was 38.3V at Y_Reset voltage of 100V and sustain voltage of 180∼185V. However, for the prior method, in which the X and Y electrodes we set to be of equal voltage after the narrow erase, the measured maximum address voltage margin was 31.3V at Y_Reset voltage of 150V and sustain voltage of 180V. This result shows that the measured maximum voltage margin for the proposed method is greater than that for the prior method by ∼7V(22%).

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.58 no.12
• /
• pp.2446-2452
• /
• 2009

A Ceramic Metal-halide lamp is achieved by adding multiple metals to a basic mercury discharge. Because the vapor pressure of most metals is very much lower than mercury itself, metal-halide salts of the desired metals, having higher vapor pressures, are used to introduce the material into the basic discharge. The metal compounds are usually polyatomic iodides, which vaporize and subsequently dissociate as they diffuse into the bulk plasma. Metals with multiple visible transitions are necessary to achieve high photometric efficiency and good color. Compounds of Sc, Dy, Ho, Tm, Ce, Pr, Yb and Nd are commonly used. The maximum visible efficacy of a Ceramic Metal Halide lamp, under the constant of a white light source, is predicted to be about 450lm/W. This is controlled principally by the chemical fill chosen for a particular lamp. Current these lamps achieve 130lm/W and these life time are the maximum 16,000[hr]. So factors of performance lower are necessary to improve lamp performance. In this paper, we analyzed factors of performance lower by accelerated deterioration test. The lamp was operated with short duration turn-on/turn-off procedure to enhance the effect due to electrode sputtering during lamp ignition. The tested lamp that was operated with a longer turn-on/off(20/20 minutes) showed blackening, changed distance between electrodes and lowered color rendering & color temperature by losses of Dy at 421.18nm, I at 511nm, T1 at 535nm and Na at 588nm compared with the new lamp.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.553-553
• /
• 2013

상압 플라즈마 기술은 표면처리, 온존 발생장치, VOC (Volatile Organic compound) 제거등 다양한 산업분야에서 응용되고 있다. 상압플라즈마 기술 또한 DBD (Dielectric barrier discharge), Griding Arc, SDIP (Surface Discharge Induced Plasma) 등 다양한 기술들이 개발되어져 왔다. VOC를 제거하기 위한 다양한 플라즈마 기술중 특히 BDB 방법과 SDIP 기술들은 플라즈마에 의한 VOC 분해 뿐만 아니라 오존 발생을 통하여 VOC성분을 분해하는 것으로 알려져 있으며 효율이 매우 뛰어난 것으로 보고 되고 있다. 그러나 BDB 방전의 경우 방전이 발생하는 간격이 매우 작아 공기를 정화시키기 위해 좁은 유로를 통하여 일정넓이를 이동하여하 하기 때문에 압력감소가 심하며 이를 개선하기위해 다단으로 설계할 경우 구조가 복잡하고 가격이 고가인 단점이 있다. 본 연구에서는 두 개의 면 전극이 마주보는 형태로 된 DBD 구조의 단점을 보완하기 위하여 빗살무늬 모양의 다층구조의 선형전극으로 구조를 변화시켜 전극에 의한 압력감소를 방지하고 효율적으로 플라즈마 및 오존을 발생시킬 수 있는 VOC제거용 상압 플라즈마 발생장치를 개발하였다. 또한 플라즈마 발생 및 오존발생량이 우수한 것으로 알려져 있는 SDIP 장치 또한 제작하여 비교 평가를 하였다. 제작된 플라즈마 발생장치는 60 Hz와 20kHz의 교류 고압파워 서플라이를 이용하여 플라즈마 발생실험을 진행하였다. 선행 연구에서는 60 Hz의 고압 파워 서플라이를 이용하여도 플라즈마 방전이 잘 된다고 보고되었는데 본 실험에서 60 Hz 파워 서플라이를 사용할 경우 15 kV 이상이 인가될 때 아주 약하게 오존이 발생하는 현상이 관찰되었으나 육안으로 구분이 될 만큼의 플라즈마 방전은 발생하지 않았다. 20kHz의 고압파워 서플라이를 사용한 경우에는 비교적 낮은 전압인 7 kV에서 방전이 관찰되었으며 분당 22 mg의 오존이 발생하였다. SDIP를 이용한 경우 플라즈마가 발생하는 조건은 SDIP의 기하학적 형상에 많이 의존하게 된다. 본 실험에 SDIP 장치는 매우 낮은 전압에서 방전을 시작하였다. 기존의 DBD와는 다르게 1.7 kV에서 플라즈마 발생하였으며 1.8 kV에서 정상적인 플라즈마 방전이 발생하였다. 이때 분당 3.1 mg의 오존이 발생하였다. 오존 발생양은 앞에 빗살형 플라즈마 방전장치에 비하여 낮은데 인가되는 전력을 고려하면 입력된 전기 에너지당 오존발생양은 비슷한 수준이였다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.447-447
• /
• 2010

일찍이 $SiO_2$ (Silicon dioxide) 박막은 다양한 분야에서 유전층, 부식 방지층, passivation층 등의 역할을 해왔다. 그리고 이러한 박막 공정은 대부분 진공의 환경에서 그 공정이 이루어지고 있다. 하지만 이러한 진공 system은 chamber, loadlock 그리고 펌프 등의 다양한 진공장비로 인한 생산 비용 증가, 공정의 복잡성뿐만 아니라 공정의 대면적화에 어려움을 지니고 있다. 그리고 최근 flexible display의 제조 공정에서 polymer 혹은 plastic 기판을 제조 공정에 적용시키기 위해 저온 공정이 필수적으로 요구 되고 있다. 이러한 기술적 한계를 뛰어 넘기 위해 최근 많은 연구가들은 atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD)에 대해 지속적으로 다양한 연구를 하고 있다. 본 연구에서는 remote-type의 modified pin-to-plate dielectric barrier discharge (DBD) 시스템을 이용한 $SiO_2$ 무기 박막 증착에 관해 연구하였다. $O_2$/He/Ar의 gas와 5 kV AC power (30 kHz)의 전원장치를 통해 고밀도 대기압 플라즈마를 발생시켰고, silicon precursor로는 hexamethyldisilazane (HMSD)를 사용하였다. 먼저 HMDS와 $O_2$ gas의 flow rate 변화에 따른 증착률을 조사하였고 그 다음으로 박막의 조성 및 표면 특성을 조사하였다. HMDS의 유량이 100 ~ 300 sccm으로 증가함에 따라 증착속도는 증가했다. 하지만 FT-IR을 통해 HMDS의 유량이 증가하면 반응에 참여할 산소 분자의 부족으로 인해 $-(CH_3)_X$의 peak intensity가 증가하고, -OH의 peak intensity가 점차 감소함을 관찰 할 수 있었다. 또한 증착된 박막의 표면에 particle과 불균일한 surface morphology 등을 SEM image를 통해 관찰 하였다. 산소 유량이 탄소와 관련된 많은 불순물들의 제거에 도움이 됨에도 불구하고 14 slm 이상의 산소가 반응기 내로 주입되게 되면 대기압 플라즈마의 discharge가 불안정하게 되어 공정효율을 저하시키는 요소가 되었다. 결과적으로 HMDS (150 sccm)/$O_2$ (14 slm)/He (5 slm)/Ar (3 slm)의 조건에서 약 42.7 nm/min 증착률을 가지며, 불순물이 적고 surface morphology가 깨끗한 $SiO_2$ 박막을 증착할 수 있었다.

• Particle and aerosol research
• /
• v.15 no.1
• /
• pp.1-13
• /
• 2019

Current desulfurization and denitrification technologies have reached a considerable level in terms of reduction efficiency. However, when compared with the simultaneous reduction technology, the individual reduction technologies have issues such as economic disadvantages due to the difficulty to scale-up apparatus, secondary pollution from wastewater/waste during the treatment process, requirement of large facilities for post-treatment, and increased installation costs. Therefore, it is necessary to enable practical application of simultaneous SOx and NOx treatment technologies to remove two or more contaminants in one process. The present study analyzes a technology capable of maintaining simultaneous treatment of SOx and NOx even at low temperatures due to the electrochemically generated strong oxidation of the wet-pulse complex system. This system also reduces unreacted residual gas and secondary products through the wet scrubbing process. It addresses common problems of the existing fuel gas treatment methods such as SDR, SCR, and activated carbon adsorption (i.e., low treatment efficiency, expensive maintenance cost, large installation area, and energy loss). Experiments were performed with varying variables such as pulse voltage, reaction temperature, chemicals and additives ratios, liquid/gas ratio, structure of the aeration cleaning nozzle, and gas inlet concentration. The performance of individual and complex processes using the wet-pulse discharge reaction were analyzed and compared.

• Neonatal Medicine
• /
• v.25 no.4
• /
• pp.153-160
• /
• 2018

Purpose: The aim of this study is to examine the tolerability and effect of early high-dose amino acid administration in extremely low birth weight infants (ELBWIs). Methods: This retrospective cohort study included ELBWI (birth weight <1,000 g, n=142). Biochemical, nutritional, and neurodevelopmental data were compared between infants who received conventional low amino acid (LAA; 1.5 g/kg/day) and those who received high amino acid (HAA; 3 g/kg/day) within the first 48 hours after birth. Neurodevelopmental data included weight, height, and head circumference at discharge, 12 to 14 and 18 to 24 months of corrected age and the Korean Bayley Scale of Infant Development II (K-BSID-II) score at 18 to 24 months of corrected age. Results: The HAA group demonstrated higher peak plasma albumin ($3.0{\pm}0.4$ vs. $3.2{\pm}0.5$, P<0.05) and lower serum creatinine ($1.7{\pm}0.9$ vs. $1.4{\pm}0.8$, P<0.05) during the first 14 days than the LAA group. Full enteral feeding was achieved significantly earlier in infants in the HAA group than in infants in the LAA group ($46.2{\pm}23.0days$ vs. $34.3{\pm}21days$, P<0.01). There was no difference between the two groups in the z score changes in all growth indicators from birth to discharge and at 12 to 14 and 18 to 24 months of corrected age, as well as in the K-BSID-II score at 18 to 24 months of corrected age. Conclusion: Aggressive administration of amino acids during the first 2 days of life in ELBWI was well tolerated and correlated with earlier full enteral feeding, but did not improve growth and neurodevelopment.

• Clean Technology
• /
• v.20 no.4
• /
• pp.375-382
• /
• 2014

This work investigated the plasma-catalytic decomposition of isopropyl alcohol (IPA) and the behavior of the byproduct compounds over monolith-supported metal oxide catalysts. Iron oxide ($Fe_2O_3$) or copper oxide (CuO) was loaded on a monolithic porous ${\alpha}-Al_2O_3$ support, which was placed inside the coaxial electrodes of plasma reactor. The IPA decomposition efficiency itself hardly depended on the presence and type of metal oxides because the rate of plasma-induced decomposition was so fast, but the behavior of byproduct formation was largely affected by them. The concentrations of the unwanted byproducts, including acetone, formaldehyde, acetaldehyde, methane, carbon monoxide, etc., were in order of $Fe_2O_3/{\alpha}-Al_2O_3$ < $CuO/{\alpha}-Al_2O_3$ < ${\alpha}-Al_2O_3$ from low to high. Under the condition (flow rate: $1L\;min^{-1}$; IPA concentration: 5,000 ppm; $O_2$ content: 10%; discharge power: 47 W), the selectivity towards $CO_2$ was about 40, 80 and 95% for ${\alpha}-Al_2O_3$, $CuO/{\alpha}-Al_2O_3$ and $Fe_2O_3/{\alpha}-Al_2O_3$, respectively, indicating that $Fe_2O_3/{\alpha}-Al_2O_3$ is the most effective for plasma-catalytic oxidation of IPA. Unlike plasma-alone processes in which tar-like products formed from volatile organic compounds are deposited, the present plasma-catalyst hybrid system did not exhibit such a phenomenon, thus retaining the original catalytic activity.

• Transactions of the Korean hydrogen and new energy society
• /
• v.17 no.4
• /
• pp.362-370
• /
• 2006

The purpose of this paper was to investigate the reforming characteristics and optimum operating condition of the plasmatron assisted $CH_4$ reforming reaction for the hydrogen-rich gas production. Also, in order to increase the hydrogen production and the methane conversion rate, parametric screening studies were conducted, in which there were the variations of the $CH_4$ flow ratio, $CO_2$ flow ratio, vapor flow ratio, mixing flow ratio and catalyst addition in reactor. High temperature plasma flame was generated by air and arc discharge. The air flow rate and input electric power were fixed 5.1 l/min and 6.4 kW, respectively. When the $CH_4$ flow ratio was 38.5%, the production of hydrogen was maximized and optimal methane conversion rate was 99.2%. Under these optimal conditions, the following synthesis gas concentrations were determined: $H_2$, 45.4%; CO, 6.9%; $CO_2$, 1.5%; and $C_2H_2$, 1.1%. The $H_2/CO$ ratio was 6.6, hydrogen yield was 78.8% and energy conversion rate was 63.6%.

• Journal of the Korean Vacuum Society
• /
• v.15 no.1
• /
• pp.57-63
• /
• 2006

We have examined the electrical and optical characteristics of the plasma display panel(PDP) produced by vacuum in-line sealing technology. We found that the luminous efficiency was decreased as the base vacuum level was increased. For the base vacuum level of $1\times10^{-3}$ Torr, the firing voltage was 235V at the discharge gas pressure of 400 Torr and the luminous efficiency was 0.8 lm/W at 180V sustaining pulse. However, for the base vacuum level of $1\times10^{-6}$ Torr, the firing voltage was reduced to 215V and the luminous efficiency was improved to 2.5lm/w. Finally, we demonstrated successfully the operation of tip-less PDP fabricated using vacuum in-line sealing method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.7
• /
• pp.595-601
• /
• 2009

For the silicon oxide $(SiO_x)$ films prepared by using the facing target sputtering (FTS) apparatus that was manufactured to enhance the preciseness of the fabricated thin-film and sputtering yield rate by forming a higher-density plasma in the electrical discharge space for using it as a thin-film passivation system for flexible organic light emitting devices (FOLEDs). The deposition characteristics were investigated under various process conditions, such as array of the cathode magnets, oxygen concentration$(O_2/Ar+O_2)$ introduced during deposition, and variations of distance between two targets and working pressure. We report that the optimum conditions for our FTS apparatus for the deposition of the $SiO_x$ films are as follows: $d_{TS}\;and\;d_{TT}$ are 90mm and 120mm, respectively and the maximum deposition rate is obtained under a gas pressure of 2 mTorr with an oxygen concentration of 3.3%. Under this optimum conditions, it was found that the $SiO_x$ film was grown with a very high deposition rate of $250{\AA}$/min by rf-power of $4.4W/cm^2$, which was significantly enhanced as compared with a deposition rate (${\sim}55{\AA})$/min) of the conventional sputtering system. We also reported that the FTS system is a suitable method for the high speed and the low temperature deposition, the plasma free deposition, and the mass-production.