• Title/Summary/Keyword: Plasma Chamber

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Development of a Mushroom Powder Certified Reference Material for Element Analysis

  • Betru, Tegegn Gizachew;Yim, Yong-Hyeon;Lee, Kyoung-Seok
    • Mass Spectrometry Letters
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    • v.11 no.4
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    • pp.108-112
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    • 2020
  • A certified reference material (CRM) for the analysis of nutrient elements in an edible mushroom (Ganoderma lyceum) powder has been developed (KRISS CRM 108-10-011). The mass fractions of calcium (Ca), iron (Fe), and zinc (Zn) were measured by isotope dilution inductively coupled plasma mass spectrometry (ID ICP/MS). To dissolve the fungi cell wall of mushroom consisted of chitin fibers, sample preparation method by single reaction chamber type microwave-assisted acid digestion with acid mixtures was optimized. The mean measurement results obtained from 12 sample bottles were used to assign as the certified values for the CRM and the between-bottle homogeneities were evaluated from the relative standard deviations. The certified values were metrologically traceable to the definition of the kilogram in the International System of Units (SI). This CRM is expected to be used for validation of analytical methods or quality control of measurement results in analytical laboratories when they determine the mass fractions of elements in mushroom or other similar samples.

Neural Network-based Time Series Modeling of Optical Emission Spectroscopy Data for Fault Prediction in Reactive Ion Etching

  • Sang Jeen Hong
    • Journal of the Semiconductor & Display Technology
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    • v.22 no.4
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    • pp.131-135
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    • 2023
  • Neural network-based time series models called time series neural networks (TSNNs) are trained by the error backpropagation algorithm and used to predict process shifts of parameters such as gas flow, RF power, and chamber pressure in reactive ion etching (RIE). The training data consists of process conditions, as well as principal components (PCs) of optical emission spectroscopy (OES) data collected in-situ. Data are generated during the etching of benzocyclobutene (BCB) in a SF6/O2 plasma. Combinations of baseline and faulty responses for each process parameter are simulated, and a moving average of TSNN predictions successfully identifies process shifts in the recipe parameters for various degrees of faults.

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Reduction of gate leakage current for AlGaN/GaN HEMT by ${N_2}O$ plasma (${N_2}O$ 플라즈마에 의한 AlGaN/GaN HEMT의 누설전류 감소)

  • Yang, Jeon-Wook
    • Journal of IKEEE
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    • v.11 no.4
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    • pp.152-157
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    • 2007
  • AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated and the effect of ${N_2}O$ plasma on the electrical characteristics of the devices was investigated. The HEMT exposed to ${N_2}O$ plasma formed by 40 W of RF power in a chamber with pressure of 20 mTorr at a temperature of $200^{\circ}C$, exhibited a reduction of gate leakage current from 246 nA to 1.2 pA by 10 seconds treatment. The current between the two isolated active regions reduced from 3 uA to 7 nA and the sheet resistance of the active layer was lowered also. The variations of electrical characteristics for HEMT were occurred within a short time expose of 10 seconds and the successive expose did not influence on the improvements of gate leakage characteristics and conductivity of the active region. The reduced leakage current level was not varied by successive $SiO_2$ deposition and its removal. The transconductnace and drain current of AlGaN/GaN HEMTs were increased also by the expose to the ${N_2}O$ plasma.

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Solid-state synthesis of yttrium oxyfluoride powders and their application to plasma spray coating (옥시불화이트륨 분말의 고상합성 및 플라즈마 스프레이 코팅 적용)

  • Lee, Jung-Il;Kim, Young-Ju;Chae, Hui Ra;Kim, Yun Jeong;Park, Seong Ju;Sin, Gyoung Seon;Ha, Tae Bin;Kim, Ji Hyeon;Jeong, Gu Hun;Ryu, Jeong Ho
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.31 no.6
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    • pp.276-281
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    • 2021
  • In order to manufacture a semiconductor circuit, etching, cleaning, and deposition processes are repeated. During these processes, the inside of the processing chamber is exposed to corrosive plasma. Therefore, the coating of the inner wall of the semiconductor equipment with a plasma-resistant material has been attempted to minimize the etching of the coating and particle contaminant generation. In this study, we synthesized yttrium oxyfluoride (YOF) powder by a solid-state reaction using Y2O3 and YF3 as raw materials. Mixing ratio of the Y2O3 and YF3 was varied from 1.0:1.0 to 1.0:1.6. Effects of the mixing ratio on crystal structure and microstructure of the synthesized YOF powder were investigated using XRD and FE-SEM. The synthesized YOF powder was successfully applied to plasma spray coating process on Al substrate.

Repair of Plasma Damaged Low-k Film in Supercritical Carbon Dioxide (초임계이산화탄소를 이용한 플라즈마 손상된 다공성 저유전 막질의 복원)

  • Jung, Jae-Mok;Lim, Kwon-Taek
    • Clean Technology
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    • v.16 no.3
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    • pp.191-197
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    • 2010
  • Repair reaction of plasma damaged porous methyl doped SiOCH films was carried out with silylation agents dissolved in supercritical carbon dioxide ($scCO_2$) at various reaction time, pressure, and temperature. While a decrease in the characteristic bands at $3150{\sim}3560cm^{-1}$ was detectable, the difference of methyl peaks was not identified apparently in the FT-IR spectra. The surface hydrophobicity was rapidly recovered by the silylation. In order to induce effective repair in bulk phase, the wafer was heat treated before reaction under vacuum or ambient condition. The contact angle was slightly increased after the treatment and completely recovered after the subsequent silylation. Methyl groups were decreased after the plasma damage, but their recovery was not identified apparently from the FT-IR, spectroscopic ellipsometry, and secondary ion mass spectroscopy analyses. Furthermore, Ti evaporator was performed in a vacuum chamber to evaluate the pore sealing effect. The GDS analysis revealed that the open pores in the plasma damaged films were efficiently sealed with the silylation in $scCO_2$.

DEVELOPMENT AND EVALUATION OF THE MUON TRIGGER DETECTOR USING A RESISTIVE PLATE CHAMBER

  • Park, Byeong-Hyeon;Kim, Yong-Kyun;Kang, Jeong-Soo;Kim, Young-Jin;Choi, Ihn-Jea;Kim, Chong;Hong, Byung-Sik
    • Journal of Radiation Protection and Research
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    • v.36 no.1
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    • pp.35-43
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    • 2011
  • The PHENIX Experiment is the largest of the four experiments that have taken data at the Relativistic Heavy Ion Collider. PHENIX, the Pioneering High Energy Nuclear Interaction eXperiment, is designed specifically to measure direct probes of the collisions such as electrons, muons, and photons. The primary goal of PHENIX is to discover and study a new state of matter called the Quark-Gluon Plasma. Among many particles, muons coming from W-boson decay gives us key information to analyze the spin of proton. Resistive plate chambers are proposed as a suitable solution as a muon trigger because of their fast response and good time resolution, flexibility in signal readout, robustness and the relatively low cost of production. The RPC detectors for upgrade were assembled and their performances were evaluated. The procedure to make the detectors better was optimized and described in detail in this thesis. The code based on ROOT was written and by using this the performance of the detectors made was evaluated, and all of the modules for north muon arm met the criteria and installation at PHENIX completed in November 2009. As RPC detectors that we made showed fast response, capacity of covering wide area with a resonable price and good spatial resolution, this will give the opportunity for applications, such as diagnosis and customs inspection system.

Analysis of Internal Flow and Control Speed for NH3 (Ammonia) Leakage Scenario of ALD Facility (ALD 설비의 NH3(Ammonia)누출 시나리오에 대한 내부유동 및 제어 속도 해석)

  • Lee, Seoung-Sam;An, Hyeong-hwan
    • Journal of the Korean Institute of Gas
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    • v.26 no.5
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    • pp.22-27
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    • 2022
  • Atomic Layer Deposition (ALD) is a facility that deposits an atomic layer on a wafer by causing a chemical reaction after decomposition using heat or plasma by inputting two or more gases during the semiconductor process. The main gas used at this time is NH3 (Ammonia). NH3 has a relatively narrow explosive range with an upper limit (UFL) of 33.6% and a lower limit (LEL) of 15%, but it can explode if a large amount suddenly gathers in one place. It is Velocity and fatal if inhaled or in contact with the skin. NH3 (Ammonia) of ALD (Atomic Layer Deposition) facility is supplied to the chamber through the gas inlet and discharged after the reaction.

Dry etching of polycarbonate using O2/SF6, O2/N2 and O2/CH4 plasmas (O2/SF6, O2/N2와 O2/CH4 플라즈마를 이용한 폴리카보네이트 건식 식각)

  • Joo, Y.W.;Park, Y.H.;Noh, H.S.;Kim, J.K.;Lee, S.H.;Cho, G.S.;Song, H.J.;Jeon, M.H.;Lee, J.W.
    • Journal of the Korean Vacuum Society
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    • v.17 no.1
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    • pp.16-22
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    • 2008
  • We studied plasma etching of polycarbonate in $O_2/SF_6$, $O_2/N_2$ and $O_2/CH_4$. A capacitively coupled plasma system was employed for the research. For patterning, we used a photolithography method with UV exposure after coating a photoresist on the polycarbonate. Main variables in the experiment were the mixing ratio of $O_2$ and other gases, and RF chuck power. Especially, we used only a mechanical pump for in order to operate the system. The chamber pressure was fixed at 100 mTorr. All of surface profilometry, atomic force microscopy and scanning electron microscopy were used for characterization of the etched polycarbonate samples. According to the results, $O_2/SF_6$ plasmas gave the higher etch rate of the polycarbonate than pure $O_2$ and $SF_6$ plasmas. For example, with maintaining 100W RF chuck power and 100 mTorr chamber pressure, 20 sccm $O_2$ plasma provided about $0.4{\mu}m$/min of polycarbonate etch rate and 20 sccm $SF_6$ produced only $0.2{\mu}m$/min. However, the mixed plasma of 60 % $O_2$ and 40 % $SF_6$ gas flow rate generated about $0.56{\mu}m$ with even low -DC bias induced compared to that of $O_2$. More addition of $SF_6$ to the mixture reduced etch of polycarbonate. The surface roughness of etched polycarbonate was roughed about 3 times worse measured by atomic force microscopy. However examination with scanning electron microscopy indicated that the surface was comparable to that of photoresist. Increase of RF chuck power raised -DC bias on the chuck and etch rate of polycarbonate almost linearly. The etch selectivity of polycarbonate to photoresist was about 1:1. The meaning of these results was that the simple capacitively coupled plasma system can be used to make a microstructure on polymer with $O_2/SF_6$ plasmas. This result can be applied to plasma processing of other polymers.

Pineal-adrenal Relationship: Modulating Effects of Glucocorticoids on Pineal Function to Ameliorate Thermal-stress in Goats

  • Sejian, V.;Srivastava, R.S.;Varshney, V.P.
    • Asian-Australasian Journal of Animal Sciences
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    • v.21 no.7
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    • pp.988-994
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    • 2008
  • The purpose of the investigation was to establish how the pineal-adrenal axis plays an important role in thermoregulation in female goats under short-term heat stress. The study was conducted to observe the influence of glucocorticoids on pineal function in goats and its influence on stress alleviation capability. Melatonin and glucocorticoid secretions and several other endocrine and biochemical blood parameters reflecting the animals well being were determined over a one week period after goats had been exposed to $40^{\circ}C$ and 60% relative humidity for 10 days. Six female goats were used in the study. These animals served as self controls prior to the start of the experiment. The study was conducted for a period of seventeen days in a psychrometric chamber at $40^{\circ}C$ and 60% relative humidity. Chemical pinealectomy was achieved using propranolol followed by exogenous hydrocortisone treatment. Blood samples were drawn twice daily after each treatment to find the effect of hydrocortisone on plasma glucose, total protein, total cholesterol, cortisol, insulin, aldosterone, melatonin and corticosterone. Chemical pinealectomy significantly ($p{\leq}0.05$) affected plasma levels of the parameters studied and these could be significantly ($p{\leq}0.05$) counteracted by administration of hydrocortisone. Chemical pinealectomy aggravated thermal stress, although administration of hydrocortisone could ameliorate the condition. This indicated a role of the pineal in support of thermoregulation. The study establishes the modulating effect of glucocorticoids on pineal activity to relieve thermal stress in goats.

Gas Typed Digital X-ray Image Sensor Using PDP Fabrication Process (PDP공정을 이용한 가스 방식의 디지털 X-ray 영상 센서)

  • Kim, Chang Man;Kim, Si Hyung;Nam, Ki Chang;Kim, Sang Hee;Song, Kwang Soup
    • Journal of the Institute of Electronics and Information Engineers
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    • v.49 no.9
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    • pp.322-327
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    • 2012
  • Parallel-plate-type scanning sensors have been commercially used for X-ray imaging sensors. In this study, we manufactured the scan typed 1D X-ray image sensor that can be used to obtain scanning images, by using the plasma display panel (PDP) fabrication process. We fabricated drift and pixel electrodes in the glass chamber and injected Xe gas at atmospheric pressure. We evaluated the intensity of a pixel signal depending on the bias voltage on the drift electrode and investigated the characteristics of shielding effect on the single pixel using lead (Pb). The adsorption rate of X-ray photon is low (4%) on the soda lime glass (1.1mm) and the electrical signal detected on the X-ray sensor was increased in the high bias voltage. We acquired digital X-ray scanning image with our DAS (data acquisition system) and sensor scanning system.