• Journal of Nutrition and Health
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• v.23 no.2
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• pp.81-92
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• 1990

Ten college women were treated with either corn oil(CO< as a source of C18:2, $\omega$6) or fish oil concentrates(FO, as a source of C20:5+C22:6, $\omega$3) with experimental diet for 7 days and then returned to normal home made diet. Kinetic changes of plasma and RBC lipids, tocopherol, MDA levels and hemolysis were observed at day-0, -3, -7, -8, -10, -14 and -21 of experimental periods. Plasma and RBC tocopherol contents were significantly increased at day-3 and -7 by tocopherol tocopherol supplement in dietary oil, but there was no significant difference between CO and FO diet with large dose of tocopherol supplement. After stop experimental regimen at day-7, plasma tocopherol content was sustained at high level until day-10 but drastically decreased at day-14 and remained at low level at day-21. However, RBC tocopherol level was not greatly responded to the dietary intake of tocopherol and was varied in the very narrow range. MDa levels of plasma and RBC were not responded in the same way as tocopherol content of plasma. MDa content of RBC was very low compared to that of plasma. RBC hemolysis by incubation in hypotonic solution was negatively correlated to plasma tocopherol level and was not correlated to the level of MDa in either plasma or RBC. There were no significant change in the levels of plasma cholesterol, HDL-chol, triglyceride, phospholipid, and lipoprotein pattern throught experimental periods.

• Journal of Korean Society for Atmospheric Environment
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• v.29 no.1
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• pp.27-37
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• 2013

CFCs (Chlorofluorocarbons) and HCFCs (Hydrochlorofluorocarbons) that are chemically stable were proven to be a greenhouse gases that can destroy ozone layer. On the other hand, HFCs (Hydrofluorocarbons) was developed as an alternative refrigerant for them, but HFCs still have a relatively higher radiative forcing, resulting in a large Global Warming Potential (GWP) of 1,300. Current regulations prohibit production and use of these chemicals. In addition, obligatory removal of existing material is in progress. Methods for the decomposition of these material can be listed as thermal cracking, catalytic decomposition and plasma process. This study reports the development of low cost and high efficiency plasma scrubber. Stability of steam plasma generation and effect of plasma parameters such as frequency of power supply and reactor geometry have been investigated in the course of the development. Method for effective removal of by-product also has been investigated. In this study, elongated rotating arc was proven to be efficient in decomposition of HFCs above 99% and to be able to generate stable steam plasma with steam contents of about 20%.

• Korean Chemical Engineering Research
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• v.44 no.5
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• pp.483-488
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• 2006

Etching process of PMMA (Polymethyl Methacrylate) on glass surface was investigated by dry etching technique using remote plasma. To determine the etching characteristics, the remote plasma etching was conducted for various process parameters such as plasma power, reaction gas and distance from plasma generation. As the distance from the plasma generation was increased, the etch rate of PMMA was linearly decreased by radical density in plasma. PMMA has removed by reactive radicals in the plasma. The etch rate increased with plasma power because of more reactive radicals. The etch rate and surface roughness of PMMA increased with $O_2$ concentration in the etchant.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.806-809
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• 2003

Ion-induced secondary electron emission coefficient $({\gamma})$. of the patterned MgO thin film with geometrical structures has been measured by ${\gamma}$ - FIB(focused ion beam) system. The patterned MgO thin film with geometrical structures has been formed by the mask (mesh of ${\sim}$ $10{\mu}m^{2})$ under electron beam evaporation method. It is found that the higher ${\gamma}$. has been achieved by the patterned MgO thin film than the normal ones without patterning.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.387-394
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• 2013

As the feature size of integrated circuits continues to decrease, the challenge of achieving an oxidation-free exposed layer after photoresist (PR) stripping is becoming a critical issue for semiconductor device fabrication. In this article, the hydrogen plasma characteristics in direct plasma and the PR stripping rate in remote plasma were studied using a $120{\Phi}$ cylindrical inductively coupled plasma source. E mode, H mode and E-H mode transitions were observed, which were defined by matching the $V_{rms}$ and total impedance. In addition, the dependence of the E-H mode transition on pressure was examined and the corresponding plasma instability regions were identified. The plasma density and electron temperature increased gradually under the same process conditions. In contrast, the PR stripping rate decreased with increasing proportion of $H_2$ gas in mixed $H_2/N_2$ plasma. The decrease in concentration of reactive radicals for the removal of PR with increasing $H_2$ gas flow rate suggests that NH radicals have a dominant effect as the main volatile product.

• Journal of the Korean Society for Heat Treatment
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• v.18 no.1
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• pp.24-28
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• 2005

New post plasma nitriding can achieve a high uniformity that have been difficult in DC nitriding and have a high productivity comparable to gas nitriding. However, it has not a enough high nitriding potential for a rapid nitriding, because surface activation or ion etching in the general plasma nitriding cannot be expected. Thus, in this study, the effects of pre-treatments with oxidation and reduction gas have been investigated to improve the nitriding kinetics of post plasma nitriding. An effective pre-treatment consisting of oxidation and reduction resulted in the increase of surface energy of STD 11. This induced the surface hardness and the effective nitriding depth of STD 11. It is thought that the increase of the surface energy and the surface area with pre-treatment promote the nucleation of nitriding layer.

• Journal of Industrial Technology
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• v.26 no.B
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• pp.173-181
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• 2006

We analyzed systematically particle growth in the pulsed $SiH_4$ plasmas by a numerical method and investigated the effects of pulse modulations (pulse frequencies, duty ratios) on the particle growth. We considered effects of particle charging on the particle growth by coagulation during plasma-on. During plasma-on ($t_{on}$), the particle size distribution in plasma reactor becomes bimodal (small sized and large sized particles groups). During plasma-off ($t_{off}$), there is a single mode of large sized particles which is widely dispersed in the particle size distribution. During plasma on, the large sized particles grows more quickly by fast coagulation between small and large sized particles than during plasma-off. As the pulse frequency decreases, or as the duty ratio increases, $t_{on}$ increases and the large sized particles grow faster. On the basis of these results, the pulsed plasma process can be a good method to suppress efficiently the generation and growth of particles in $SiH_4$ PCVD process. This systematical analysis can be applied to design a pulsed plasma process for the preparation of high quality thin films.

• Membrane and Water Treatment
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• v.4 no.2
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• pp.109-126
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• 2013

Surface modification by low-pressure ammonia ($NH_3$) plasma on commercial thin-film composite (TFC) membranes was investigated in this study. Surface hydrophilicity, total surface free energy, ion exchange capacity (IEC) and zeta (${\zeta}$)-potentials were determined for the TFC membranes. Qualitative and quantitative analyses of the membrane surface chemistry were conducted by attenuated total reflectance Fourier transform infrared (ATR FT-IR) spectroscopy. Results showed that the $NH_3$ plasma treatment increased the surface hydrophilicity, in particular at a plasma treatment time longer than 5 min at 50 W of plasma power. Total surface free energy was influenced by the basic polar components introduced by the $NH_3$ plasma, and isoelectric point (IEP) was shifted to higher pH region after the modification. A ten (10) min $NH_3$ plasma treatment at 90 W was found to be adequate for the TFC membrane modification, resulting in a membrane with better characteristics than the TFC membranes without the modification for water treatment. The thin-film chemistry (i.e., fully-aromatic and semi-aromatic nature in the interfacial polymerization) influenced the initial stage of plasma modification.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.234.1-234.1
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• 2014

Many studies have been investigated on high density plasma source (Electron Cyclotron Resonance[ECR], Inductively Coupled Plasma[ICP], Helicon plasma) for large area source after It is announced that productivity of plasma process depends on plasma density. Among them, Some researchers have been studied on multiple sources In this study, we attempted to determine the possibility of multiple inductively coupled plasma (ICP), and helicon plasma sources for large-area processes. Experiments were performed with the one and two coils to measure plasma and electrical parameters, and a circuit simulation was performed to measure the current at each coil in the 2-coil experiment. Based on the result, we could determine the possibility of multiple ICP sources due to a direct change of impedance due to current and saturation of impedance due to the skin-depth effect. However, a helicon plasma source is difficult to adapt to the multiple sources due to the consistent change of real impedance due to mode transition and the low uniformity of the B-field confinement. As a result, it is expected that ICP can be adapted to multiple source for large-area processes.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.384.2-384.2
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• 2014

We investigated the electrical and structural properties of chemical vapor deposition (CVD)-grown graphene and post treated by O2 plasma. For the patterning of graphene, the plasma technology is generally used and essential for etching of graphene. But, the cautious O2 plasma treatments are required to avoid the damage in graphene edge which can be the harmful effects on the device performance. To analyze the effects of plasma treatment on structural properties of graphene, the change of surface morphology of graphene are measured by scanning electron microscope and atomic force microscope before and after plasma treatment. In addition, the binding energy of carbon and oxygen are measured through to X-ray photoelectron spectroscopy. After plasma treatment, the severe changes of surface morphology and binding energy of carbon and oxygen were observed which effects on the change of sheet resistance. Finally, to analyze of graphene characteristics, we measured the Raman spectroscopy. The measured results showed that the plasma treatment makes the upward of D-peak and downward of G'-peak by elevated power of plasma.