• 제목/요약/키워드: Planar.

검색결과 3,656건 처리시간 0.047초

평면기구 메커니즘을 이용한 소형 6족 로봇 (A Milli-Scale Hexapedal Robot using Planar Linkages)

  • 김동선;정순필;정광필
    • 로봇학회논문지
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    • 제13권2호
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    • pp.97-102
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    • 2018
  • A small and lightweight crawling robots have been actively studied thanks to their outstanding mobility and maneuverability. Those robots can navigate into more confined spaces that larger robots are unable to reach or enter such as debris and caves. In this paper, we propose a milli-scale hexapedal robot based on planar linkage design. To make this possible, two necessary conditions for successful crawling are satisfied: thrust force from the ground and aerial phase while running. These conditions are achieved through a newly developed leg design. The robot has a pair of legs and each leg has three feet. Those feet alternatively moves based on 1DOF planar linkage. This linkage is installed at each side of the robot and finally the robot shows the alternating gait and aerial phase during running. As a result, the robot runs with the crawling speed of 0.9 m/s.

Advances in MEMS Based Planar VOA

  • Lee, Cheng-Kuo;Huang, RueyShing
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제7권3호
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    • pp.183-195
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    • 2007
  • MEMS technology is proven to be an enabling technology to realize many components for optical networking applications. Due to its widespread applications, VOA has been one of the most attractive MEMS based key devices in optical communication market. Micromachined shutters and refractive mirrors on top of silicon substrate or on the device layer of SOI (Silicon-on-insulator) substrate are the approaches trapped tremendous research activities, because such approaches enable easier alignment and assembly works. These groups of devices are known as the planar VOAs, or two-dimensional (2-D) VOAs. In this review article, we conduct the comprehensively literature survey with respect to MEMS based planar VOA devices. Apparently MEMS VOA technology is still evolving into a mature technology. MEMS VOA technology is not only the cornerstone to support the future optical communication technology, but the best example for understanding the evolution of optical MEMS technology.

A Fourth-Order Accurate Numerical Boundary Scheme for the Planar Dielectric Interface: a 2-D TM Case

  • Hwang, Kyu-Pyung
    • Journal of electromagnetic engineering and science
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    • 제11권1호
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    • pp.11-15
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    • 2011
  • Preserving high-order accuracy in high-order FDTD solutions across dielectric interfaces is very important for practical time-domain electromagnetic simulations. This paper presents a fourth-order accurate numerical boundary scheme for the planar dielectric interface to be used in the fourth-order FDTD method proposed earlier by the author. The interface scheme for the two-dimensional (2-D) transverse magnetic (TM) polarization case is derived and validated by monitoring the $L_2$ norm errors in the numerical solutions of a partially-filled cavity demonstrating its fourth-order convergence and long-time numerical stability in the presence of the planar dielectric interface.

전기자동차 배터리 충전을 위한 DC - DC컨버터용 Super Junction MOSFET 설계에 관한 연구 (Study on the Design of DC-DC Converter for Super Junction MOSFET Battery Charger of Electric Vehicles)

  • 김범준;홍영성;심관필;강이구
    • 한국전기전자재료학회논문지
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    • 제26권8호
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    • pp.587-590
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    • 2013
  • Release competition and development of eco-friendly vehicles have been conducted violently also automaker, it will be a high growth industry of the charger and battery, which is the driving source of the motor of an electric vehicle. Reduces the on-resistance power elements DC - DC converter for battery charger for electric vehicles, must minimize switching losses. Should have a low on-resistance power than existing products. Compare the Super Junction MOSFET and Planar MOSFET, As a result, super junction MOSFET improve on about 87.4% on-state voltage drop performance than planar MOSFET.

마이크로 부품 조립을 위한 평면 3 자유도 병렬 정렬기의 최적설계 (Design Optimization of Planar 3-DOF Parallel Manipulator for Alignment of Micro-Components)

  • 이정재;송준엽;이문구
    • 한국생산제조학회지
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    • 제20권3호
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    • pp.322-328
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    • 2011
  • This paper presents inverse kinematics and workspace analysis of a planar three degree-of-freedom (DOF) parallel manipulator. Furthermore, optimization problem of the manipulator is presented. The manipulator adopts PRR (Prismatic-Revolute-Revolute) mechanism and the prismatic actuators are fixed to the base. This leads to a reduction of the inertia of the moving links and hence enables it to move with high speed. The actuators are linear electric motors. First, the mechanism based on the geometry of the manipulator is introduced. Second, a workspace analysis is performed. Finally, design optimization is carried out to have large workspace. The proposed approach can be applied to the design optimization of various three DOF parallel manipulators in order to maximize their workspace. The performance of mechanism is improved and satisfies the requirements of workspace to align micro-components.

InP-Based Polarization-Insensitive Planar Waveguide Concave Grating Demultiplexer with Flattened Spectral Response

  • Kwon, Oh-Kee;Lee, Chul-Wook;Lee, Dong-Hun;Sim, Eun-Deok;Kim, Jong-Hoi;Baek, Yong-Soon
    • ETRI Journal
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    • 제31권2호
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    • pp.228-230
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    • 2009
  • InP-based planar waveguide 48-channel concave grating demultiplexers with a channel spacing of 0.8 nm (100 GHz) are described and demonstrated. Polarization insensitivity and flattened spectral response are successfully achieved by the introduction of a polarization compensator and a two-focus grating, respectively. The fabricated device shows a polarization-dependent wavelength shift of less than 20 pm and a -3 dB spectral width of about 0.55 nm (68.75 GHz) over all channels.

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적층형 4-BAR 메커니즘을 이용한 평면형 메니퓰레이터 (Planar Manipulator using Stackable 4-BAR Mechanisms)

  • 이호열;최영진
    • 제어로봇시스템학회논문지
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    • 제16권5호
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    • pp.456-462
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    • 2010
  • This paper proposes a new planar robotic manipulator using stackable 4-BAR mechanisms for various applications. The proposed manipulator has an advantage that we can separate the driving actuators from a robotic manipulator. By separating actuators from the manipulator, we are able to separate the electrical component such as electrical wiring from the mechanical linkage/joint components in the robotic manipulator. Also, we suggest the kinematic analysis of the proposed manipulator which is composed of input mechanisms, multiple 4-BAR mechanisms and output mechanisms. Finally, we suggest numerical simulations to show the effectiveness of the proposed manipulator.

간단한 평면 오실레이터의 위상 천이의 시변 분산에 대한 기존 3개 모델의 추정 정확도 비교 (Accuracy Comparison of Existing 3 Models in Estimating Time-Varying Variance of Phase Deviation of a Simple Planar Oscillator)

  • 전만영
    • 전기전자학회논문지
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    • 제19권4호
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    • pp.500-505
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    • 2015
  • 본 연구에서는, 가우시안 잡음에 의해 교란된 평면 오실레이터의 위상 천이의 시변 분산을, 기존 3개 위상천이 모델이 얼마나 정확하게 추정할 수 있는지를 몬테카를로 시뮬레이션을 통하여 비교한다. 비교 결과, Kaertner 모델이 ISF 모델이나 PP 모델 보다 약 1000배 높은 정확도를 가지고 위상 천이의 시변 분산을 추정한다는 것을 알 수 있다. 또한, PP 모델의 추정 정확도는 ISF 모델 보다 다소 높다는 것을 알 수 있다.

스트립 선로의 절단각에 따른 특성 해석 (Characteristic Analysis corresponding to cutting edge of Strip Line)

  • 김태용;이훈재
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2011년도 추계학술대회
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    • pp.58-59
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    • 2011
  • 유전체 위에 구성된 마이크로 스트립 선로는 그 구성 형태에 따라 안테나, 통신용 필터, 공진기 등으로 응용할 수 있다. 그러나 최근 스트립 선로의 집적화 과정과 소형화와 관련하여 X 밴드 이상에서 구동되는 경우에는 선로의 곡각지점에서 불필요한 신호 누설로 인하여 다른 선로에 영향을 미치거나 EMC 등의 문제 등을 야기 시킨다. 본 연구에서는 유전체 위에 구성된 스트립 선로의 곡각지점에서의 신호 전달에 따른 영향을 조사하였다.

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Performance of Non Punch-Through Trench Gate Field-Stop IGBT for Power Control System and Automotive Application

  • Kang, Ey Goo
    • Transactions on Electrical and Electronic Materials
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    • 제17권1호
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    • pp.50-55
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    • 2016
  • In this paper, we have analyzed the electrical characteristics of 1200V trench gate field stop IGBT and have compared to NPT planar type IGBT and NPT planar field stop IGBT. As a result of analyzing, we obtained superior electrical characteristics of trench gate field stop IGBT than conventional IGBT. To begin with, the breakdown voltage characteristic was showed 1,460 V and on state voltage drop was showed 0.7 V. We obtained 3.5 V threshold voltage, too. To use these results, we have extracted optimal design and process parameter and designed trench gate field stop IGBT. The designed trench gate IGBT will use to inverter of renewable energy and automotive industry.