• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.3
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• pp.478-484
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• 1994

Facing target dc sputtering system developed by Hoshi et al. has simple configuration and high deposition rate under moderate substrate temperature in the range of pressure 5x10S0-4T - 1x10S0-2T torr. In this system, magnetic field should be applied perpendicular to the target surface in order to confine high energy secondary electrons between two targets. Because of this magnetic field, the glow discharge characteristics are very different from dc planar diode system showing some unstable discharge region. In this paper, the glow discharge characteristics of this system have been studied under the condition of Ti targets with Ar-NS12T(10%) as working gas. It is found that this system has stable discharge region under the discharge current density of 15-30(mA/cmS02T). The plasma density and electron temperature are in the range of 10S010Y - 10S011T(CMS0-3T) and 2.5-5(eV), respectively.

• ETRI Journal
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• v.13 no.4
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• pp.52-57
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• 1991

We fabricated very high. speed PIN Photodiode module for the application of high speed optical receiver. OMVPE was used for the growth of InP layer on InGaAs absorption layer. The structure was the combination of mesa and planartype. Fabrication procedure was more complicated than simple mesa or simple planar type structure because we used semiinsulating InP substrate in order to reduce stray capacitance. The results at-5V were as follows : dark current was less than 1nA, capacitance was 0.55pF, and cutoff frequency was above 3GHz, and rise and fall time was about 100ps.

• Proceedings of the IEEK Conference
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• 2007.07a
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• pp.81-82
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• 2007

This paper presents a WLAN band active monopole antenna which is made of a CPW-fed monopole antenna and a low noise amplifier implemented on single-layer low-temperature co-fired ceramic (LTCC) substrate. Planar active antenna measure return loss and power test. (drain voltage = 4V, gate voltage = -0.6V). The bandwidth, is 540MHz, return loss is -38dB.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.35-40
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• 1998

There have two kinds of defects, planar defects and vertical defects which were called micropipes in SiC bulk crystals grown by a sublimation method. We could decrease these defects by adding a little piece of Si in the SiC powder or using Ta cylinder in the crucible. so were report the dependence of these defects in a wafer on silicon/carbon ratio in this paper. The chemical species sublimed from SiC powder is affected by carbon from the graphite wall of the crucible. It is important to control the chemical species on the substrate.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.2
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• pp.1091-1094
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• 2005

This paper presents analysis and design for printed directive antenna using Bluetooth AP system. For the miniaturization of the antennas, dielectric substrate (${\varepsilon}_r$=4.6) and planar line Yagi-Uda antenna structure are used. The proposed Yagj-Uda antennas are simulated using commercial simulator (HFSS). The results of the simulation are presented and compared with characteristics of each array type. Especially, the proposed antennas can be applied to the design of various communication systems for 2.4 GHz band.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.300.2-300.2
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• 2013

Periodically shaped pillar-arrays and hole-arrays were fabricated on a Si wafer. Geometric features are similar in a periodic length of 4 ${\mu}m$ and a depth of 2 ${\mu}m$. For the hole-array patterns, positive PR processes were performed. UV exposed PR patterns were removed during a developing process to leave shapes of inversely replicated from a glass photomask. Meanwhile, negative PR processes were taken for the pillar-array patterns. UV exposed PR patterns were remained on a Si substrate having a same feature of patterns of a glass photomask. For an electrical aspect, a pillar structure has a short carrier-collection length resulting in the improved open-circuit voltage of 609 mV from 587 mV of a planar device. An improved performance may be achieved to reduce recombination loss along the patterning surface.

• Journal of Welding and Joining
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• v.22 no.3
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• pp.62-68
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• 2004

The strip Au bumps are bonded using longitudinal ultrasonic far the electronic package. Au bumps on the chip and substrate are aligned in a crossed shape, and the ultrasonic is imposed on the chip to form the solid-state bond between the Au bumps. Deformed bump shapes are calculated using the finite element method, and the bond strength is measured experimentally. The crossed strip Au bumps are deformed similar to the saddle, which provides larger contact surface area and higher friction force. Compared with the previous bonding method between the Au bump and planar pad, higher bond strength is obtained using the crossed strip bumps.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.5B
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• pp.985-991
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• 2000

In this paper, the optimum structure of 2GHz magnetic thin film planar inductor were designed and fabricated to reduce the inductor area and to maximize the inductance L and quality factor Q of the inductor. The optimum design was performed utilizing Co90Fe10 layer multilayered with SiO2 layers to avoid the eddy-current skin effect and considering new lumped element model. New magnetic thin film inductors operating at 2GHz were fabricated on a Si substrate utilizing photo-lithography and lift-off techniques. The frequency characteristics of L, Q, and impedance in more than fifty identical inductors were measured using an RF Impedance Analyzer(HP4291B with HP16193A test fixture). The self-resonant frequencies(SRF) of the inductors were measured by a Vector Network Analyzer(HP8510). The developed inductors have SRF of 1.8 to 2.3GHz, L of 47 to 68nH, and Q of 70 to 80 near 1GHz. Finally, high frequency, high performance, planar micro-inductor(area=30.8 x 30.8il$^2$) with maximized L and Q were fabricated succefully.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.7
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• pp.4457-4462
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• 2014

This paper presents an antenna design that can be applied to flexible transparent conducting film. The antennas shaping PIFA (Planar Inverted F-shpae Antenna) were produced on polyamide substrates, which are flexible. The IZTO/Ag/IZTO multilayer films were used for the antennas and exhibited superior electrical, optical and flexible characteristics. This study compared the transparency and performance of two antennas (IZTO/Ag/IZTO multilayer film, and Ag monolayer film). The operation frequencies were set to 5.18~5.32 GHz of WLAN (802.11a). The performance showed a maximum efficiency and peak gain of 89 % and 5.86 dBi, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.3
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• pp.328-334
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• 2012

This paper proposes a design technique of wide-band antenna for handy phone with 700 MHz LTE(Long Term Evolution) low frequency bandwidth. The proposed antenna based on the PIFA(Planar Inverted-F type Antenna) structure was designed and considered. In order to realize the wide bandwidth, a round structure which is able to control the electric path length of current and a branch line element which can be obtain the dual resonance characteristics were introduced in this design. As a result, It was realized about 95 MHz bandwidth in spite of very small space of $30{\times}34mm$ used for FR-4 substrate with relative permitivity of 4.4 at 700 MHz band. Measurement results of return loss, bandwidth and gain radiation pattern were agreed well with their calculation results.