• 제목/요약/키워드: Planar Device

검색결과 244건 처리시간 0.024초

InP-Based Polarization-Insensitive Planar Waveguide Concave Grating Demultiplexer with Flattened Spectral Response

  • Kwon, Oh-Kee;Lee, Chul-Wook;Lee, Dong-Hun;Sim, Eun-Deok;Kim, Jong-Hoi;Baek, Yong-Soon
    • ETRI Journal
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    • 제31권2호
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    • pp.228-230
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    • 2009
  • InP-based planar waveguide 48-channel concave grating demultiplexers with a channel spacing of 0.8 nm (100 GHz) are described and demonstrated. Polarization insensitivity and flattened spectral response are successfully achieved by the introduction of a polarization compensator and a two-focus grating, respectively. The fabricated device shows a polarization-dependent wavelength shift of less than 20 pm and a -3 dB spectral width of about 0.55 nm (68.75 GHz) over all channels.

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Optical Properties of a Proton-implanted Nd:CNGG Planar Waveguide

  • Zhu, Qian-Lin;Lin, Ming-Fu;Chen, Jing-Yi;Wang, Zhong-Yue;Liu, Chun-Xiao
    • Current Optics and Photonics
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    • 제3권2호
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    • pp.172-176
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    • 2019
  • The work reports on the fabrication of an optical planar waveguide in the Nd:CNGG crystal by the 0.4-MeV hydrogen ion implantation with a fluence of $8.0{\times}10^{16}ions/cm^2$. The nuclear energy loss of the implanted hydrogen ions was derived by using SRIM 2013 code. The microscope image of the proton-implanted Nd:CNGG crystal cross section was captured by a metallographic microscope. The transmittance spectra were recorded before and after the ion implantation. The light intensity distribution of the planar waveguide at 632.8 nm was experimentally measured to validate its effect on one dimension confinement. The investigation shows that the proton-implanted Nd:CNGG waveguide is a candidate for an optoelectronic integrated device.

Development of New LTPS Process

  • Yi, Chung;Park, Kyung-Min;Choi, Pil-Mo;Kim, Ung-Sik;Kim, Dong-Byum;Kim, Chi-Woo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.1024-1026
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    • 2004
  • We have developed the five mask $PMOS^1$ and the six mask CMOS process architecture for poly-Si TFT. In order to have a competitive process with that for a-Si TFT, the simple co-planar electrode structure whose data line electrode and pixel electrode are on the same plane was adopted. In addition, RGB + White four color $technology^2$ were applied to achieve high aperture ratio and transmittance. Using the aforementioned process architecture and four color technology, 2.0 inch qCIF transmissive micro-reflectance (TMR) device was successfully fabricated.

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롤투롤 공정을 이용한 광정렬 구조 내장형 광소자 연구 (The Study of Optical Device embedded Optical Alignment fabricated by Roll to Roll Process)

  • 조상욱;강호주;정명영
    • 마이크로전자및패키징학회지
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    • 제20권3호
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    • pp.19-22
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    • 2013
  • 고속, 대용량 정보 전송 수요가 급격하게 증가함에 따라 대량생산 및 고효율의 PLC형 집적 광소자의 연구가 증가하고 있다. 본 논문에서는 광소자와 광섬유가 수동 정렬이 가능하도록 일체형 정렬 구조를 제안하였다. 일체형 구조의 광소자는 기본적으로 1채널의 입력부의 광신호를 2채널의 출력부를 통해 분리하는 광분배기 구조이다. 본 연구에서 제안된 일체형 구조의 제작은 롤투롤 공정 기술을 이용하여 제작하고 그 특성을 평가하였다. 롤투롤 공정 기술은 광소자의 제작에 들어가는 시간을 절감하고 연속생산이 가능한 방법이다. 제작된 광소자의 광특성은 1550 nm의 광원을 이용하여 약3.9 dB의 삽입손실과 0.2 dB의 채널 균일도를 나타내었다.

Compact See-though Near to Eye Display with Diffractive Optical Elements

  • Levola, Tapani
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1749-1752
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    • 2007
  • The Near to Eye Display (NED) solves the problem of having a display larger than a small portable device. The virtual image of the NED is created using a microdisplay and imaging optics. It is important that the optics does not interfere with the human visual system and that the device is light, compact and easy to wear. In this paper the principles of a biocular NED, which is based on a novel diffractive Exit Pupil Expander (EPE), are presented. The optical system is compact and intrinsically free from distortions and misalignments.

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Electrical Characteristics of Flat Cesium Antimonide Photocathode Emitters in Panel Devices

  • Jeong, Hyo-Soo
    • Transactions on Electrical and Electronic Materials
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    • 제17권5호
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    • pp.306-309
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    • 2016
  • The Cs3Sb photocathode was formed by non-vacuum process technology. An in-situ vacuum device was fabricated successively with flat cesium antimonide photocathode emitters fabricated in a process chamber. The electrical properties of the device were characterized. Electron emission from the devices was induced by photoemitted electrons, which were accelerated by an anode electric field that was shielded from the photoemitter surface. The electrical characteristics of the devices were investigated by measuring the anode current as a function of device operation times with respect to applied anode voltages. Planar blue LED light with a 450 nm wavelength was used as an excitation source. The results showed that the cesium antimonide photocathode emitter has the potential of long lifetime with stable electron emission characteristics in panel devices. These features demonstrate that the cesium antimony photocathodes produced by non-vacuum processing technology is suitable for flat cathodes in panel device applications.

Design of compact klystron amplifier using Field-emitter-arrays (FEA)-based cathode

  • Jin, Jeong-Gu;Ha, Hyun-Jun;Park, Gun-Sik
    • Journal of Korean Vacuum Science & Technology
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    • 제3권1호
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    • pp.59-65
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    • 1999
  • There has been an interest to develop an efficient, compact microwave device using field-emitter-arrays (FEA)-based cathode. Toe valuate the optimum device-efficiency in a compact size, the propagation properties of the premodulated electron beam for the FEA-based cathode is studied in detail by the computer simulation using a PIC code, MAGIC. For the premodulated electron beam whose phase of the energy leads the phase of the current by $\pi$/2, the amplitude of the downstream current modulation can be kept as high as the initial modulation level. Using the beam parameters with the beam voltage of 6kV and the current of 2.0A, 30% of efficiency is predicted when the quality factor of 800 is chosen. the device length is reduced about twice compared with that of the conventional device. The design of practical planar cathode is carried out to meet the minimum diameter of the electron beam as 0.5 mm.

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4H-SiC Planar MESFET for Microwave Power Device Applications

  • Na, Hoon-Joo;Jung, Sang-Yong;Moon, Jeong-Hyun;Yim, Jeong-Hyuk;Song, Ho-Keun;Lee, Jae-Bin;Kim, Hyeong-Joon
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제5권2호
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    • pp.113-119
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    • 2005
  • 4H-SiC planar MESFETs were fabricated using ion-implantation on semi-insulating substrate without recess gate etching. A modified RCA method was used to clean the substrate before each procedure. A thin, thermal oxide layer was grown to passivate the surface and then a thick field oxide was deposited by CVD. The fabricated MESFET showed good contact properties and DC/RF performances. The maximum oscillation frequency of 34 GHz and the cut-off frequency of 9.3 GHz were obtained. The power gain was 10.1 dB and the output power of 1.4 W was obtained for 1 mm-gate length device at 2 GHz. The fabricated MESFETs showed the charge trapping-free characteristics and were characterized by the extracted small-signal equivalent circuit parameters.

평판형 광-바이오센서용 2차원 광자결정 제작을 위한 Dip-Pen Nanolithography 공정 연구 (A Study on Dip-Pen Nanolithography Process to fabricate Two-dimensional Photonic Crystal for Planar-type Optical Biosensor)

  • 김준형;이종일;이현용
    • 한국전기전자재료학회논문지
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    • 제19권3호
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    • pp.267-272
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    • 2006
  • Optical waveguide based on symmetric and asymmetric Mach-Zehnder interferometer(MZI) type was designed, fabricated and measured the optical characteristics for the application of biosensor. The wavelength of the input optical signal for the device was 1550 nm. And the difference of refractive index was $0.45\;{\Delta}\%$ between core and cladding of the device. The TM(Transverse Magnetic) mode optical properties of the biosensor were analyzed with the refractive index variation of gold thin film deposited for overclad. Nowadays, nano-photonic crystal structures have been paied much attention for its high optical sensitivity. There is a technique to realize the structure, which is called Dip-Pen Nanolithography(DPN) process. The process requires a nano-scale process patterning resolution and high reliability. In this paper, two dimensional nano-photonic crystal array on the surface was proposed for improving the sensitivity of optical biosensor. And the Dip-Pen Nanolithogrphy process was investigated to realize it.