• 한국전기전자재료학회논문지
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• 제25권4호
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• pp.261-265
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• 2012

IGBT(insulated gate bipolar transistor) is outstanding device for current conduction capabilities. IGBT design to control the large power switching device for power supply, converter, solar converter, electric home appliances, etc. like this IGBT device can be used in many places so to increase the efficiency of the various structures are coming. in this paper optimization design of planar type IGBT and planar field stop IGBT, and both devices have a comparative analysis and reflection of the electrical characteristics.

• 조명전기설비학회논문지
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• 제29권4호
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• pp.11-17
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• 2015

While most switching devices are based on PN junctions, a single layer can realize a switching device in the case of vanadium dioxide($VO_2$) thin films. In this paper, bidirectional current triggering(switching) is demonstrated in a two-terminal planar device based on a $VO_2$ thin film by illuminating the film with an infrared laser at 1550nm. To begin with, a two-terminal planar device, which had a $30{\mu}m$-wide $VO_2$ conducting layer and an electrode separation of $10{\mu}m$, was fabricated. A specific bias voltage range for stable bidirectional laser triggering was experimentally obtained by measuring the current-voltage characteristics of the fabricated device in a current-controlled mode. Then, by constructing a test circuit composed of the device, a standard resistor, and a DC voltage source, connected in series, the transient response of laser-triggered current and its response time were investigated with a DC bias voltage, included in the above specific bias voltage range, applied to the device. In the test circuit with a DC voltage source of 3.35V and a $10{\Omega}$ resistor, bidirectional laser triggering could be realized with a maximum on-state current of 15mA and a switching contrast of ~78.95.

• 한국광학회지
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• 제16권2호
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• pp.138-142
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• 2005

본 논문에서는 하나의 얇은 반파장판(half-wave plate)을 이용하여 광섬유-평면도파로 결합기(fiber-to-planar waveguide coupler)의 편광 의존성을 줄이기 위한 방법이 제안되었고 실험적으로 검증되었다. 소자의 편광의존성 제거 원리를 설명하였고 제조과정을 기술하였다. 실험 결과는 소자의 공진 파장이 입력광의 편광상태에 독립적임을 보였다.

• 전자공학회논문지A
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• 제29A권8호
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• pp.78-88
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• 1992

To improve the characteristics of sub$\mu$m short channel MOSFET device, a new device having the convex structure is proposed. This device has 3-dimensionally expandable channel length according to the vertical etched silicon height. For the purpose of comparing the DC and AC characteristics, planar device is also fabricated. Comparing the channel length, the convex device with 0.4$\mu$m silicon height is larger about 0.56$\mu$m in NMOS and 0.78$\mu$m in PMOS than planar devices. DC characteristics, such as threshold voltage, operational current, substrate current and breakdown voltage are compared together with AC characteristics using the ring oscillator inverter delay. Also process and device simulation are performed and the differences between convex and pranaldevice are also compared.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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• pp.253-256
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• 2000

We report the experimental results for the coupling properties of the an side-polished single-mode fiber covered with metal-clad planar waveguide. The experimental results show that the large birefringence of a metal-clad planar waveguide facilitates the effective separation of TE and TM polarization in the spectral domain. Additionally the resonant wavelengths of the device are tuned based in the thermo-optic effect of polymer planar waveguide.

• 조명전기설비학회논문지
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• 제29권11호
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• pp.28-34
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• 2015

By incorporating a 966nm near infrared laser, we demonstrated bidirectional current triggering of between 0 and 10mA in a two-terminal planar device based on a highly resistive vanadium dioxide ($VO_2$) thin film grown by a pulsed laser deposition method. A two-terminal planar device, which had an electrode separation of $100{\mu}m$ and a $50{\mu}m-wide$ $VO_2$ conducting layer, was fabricated through ion beam-assisted milling and photolithographic techniques. A bias voltage range for stable bidirectional current triggering was determined by investigating the current-voltage curves of the $VO_2-based$ device in a current-controlled mode. Bidirectional current triggering of up to 10mA was realized by directly illuminating the $VO_2$ film with a focused infrared laser beam, and the transient responses of triggered currents were analyzed when the laser was modulated at various pulse widths and repetition rates. A switching contrast between off- and on-state currents was evaluated as ~3571, and the rising and falling times were measured as ~40 and ~20ms, respectively.

• Transactions on Electrical and Electronic Materials
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• 제17권4호
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• pp.222-226
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• 2016

This paper investigated the trench process, unified field limit ring, and other products for the development of a 500 V-level unified trench gate power MOSFET. The optimal base chemistry for the device was found to be SF₆. In SEM analysis, the step process of the trench gate and field limit ring showed outstanding process results. After finalizing device design, its electrical characteristics were compared and contrasted with those of a planar device. It was shown that, although both devices maintained a breakdown voltage of 500 V, the Vth and on-state voltage drop characteristics were better than those of the planar type.

• 대한전자공학회논문지SD
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• 제41권2호
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• pp.33-38
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• 2004

측면 연마된 편광 유지 광섬유와 폴리머 평면도파로가 결합된 비대칭 방향성 결합기를 이용하여 가변 광필터를 구현하였다. 소자의 최상부층 위에 형성된 마이크로 스트립 히터에 의하여 유도된 폴리머 평면도파로의 열광학 효과는 결합기의 공진파장을 이동시킨다. 제작된 소자는 720 ㎽의 인가 전력으로 230 ㎚ 이상의 넓은 가변 범위를 보였다.

• 한국광학회지
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• 제14권4호
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• pp.355-358
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• 2003

얇은 금속 중간층이 있는 광섬유-평면도파로 결합기의 편광 및 파장 선택적 결합특성에 관한 실험 결과를 보고한다. 금속 박막층의 두께와 최상부층의 굴절률이 소자의 특성에 미치는 영향을 측정하고 그 결과를 설명하였다. 제안된 소자는 편광기, 광변조기 및 광센서 등의 다양한 응용 가능성을 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.13-13
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• 2010

In this paper, the electrical characteristics of Fin-type SONOS (Silicon-Oxide-Nitride-Oxide-Silicon) flash memory and Planar-type SONOS flash memory are analyzed. Compared to the Planar-type SONOS device, Fin-type SONOS device shows a good short channel effect immunity. Moreover, memory characteristics such as PIE speed, Endurance and Retention of FinFET SONOS flash are batter than that of conventional Planar-type SONOS flash memory.