• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.4
• /
• pp.261-265
• /
• 2012

IGBT(insulated gate bipolar transistor) is outstanding device for current conduction capabilities. IGBT design to control the large power switching device for power supply, converter, solar converter, electric home appliances, etc. like this IGBT device can be used in many places so to increase the efficiency of the various structures are coming. in this paper optimization design of planar type IGBT and planar field stop IGBT, and both devices have a comparative analysis and reflection of the electrical characteristics.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.29 no.4
• /
• pp.11-17
• /
• 2015

While most switching devices are based on PN junctions, a single layer can realize a switching device in the case of vanadium dioxide($VO_2$) thin films. In this paper, bidirectional current triggering(switching) is demonstrated in a two-terminal planar device based on a $VO_2$ thin film by illuminating the film with an infrared laser at 1550nm. To begin with, a two-terminal planar device, which had a $30{\mu}m$-wide $VO_2$ conducting layer and an electrode separation of $10{\mu}m$, was fabricated. A specific bias voltage range for stable bidirectional laser triggering was experimentally obtained by measuring the current-voltage characteristics of the fabricated device in a current-controlled mode. Then, by constructing a test circuit composed of the device, a standard resistor, and a DC voltage source, connected in series, the transient response of laser-triggered current and its response time were investigated with a DC bias voltage, included in the above specific bias voltage range, applied to the device. In the test circuit with a DC voltage source of 3.35V and a $10{\Omega}$ resistor, bidirectional laser triggering could be realized with a maximum on-state current of 15mA and a switching contrast of ~78.95.

• Korean Journal of Optics and Photonics
• /
• v.16 no.2
• /
• pp.138-142
• /
• 2005

In this paper, a method to eliminate the polarization dependent properties of fiber-to-planar waveguide couplers using a thin half-waveplate is proposed and demonstrated. The operation principle of the device is explained and the fabrication technology is presented. It is experimentally shown that the resonance wavelengths of the device are independent of the polarization state of input light.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.29A no.8
• /
• pp.78-88
• /
• 1992

To improve the characteristics of sub$\mu$m short channel MOSFET device, a new device having the convex structure is proposed. This device has 3-dimensionally expandable channel length according to the vertical etched silicon height. For the purpose of comparing the DC and AC characteristics, planar device is also fabricated. Comparing the channel length, the convex device with 0.4$\mu$m silicon height is larger about 0.56$\mu$m in NMOS and 0.78$\mu$m in PMOS than planar devices. DC characteristics, such as threshold voltage, operational current, substrate current and breakdown voltage are compared together with AC characteristics using the ring oscillator inverter delay. Also process and device simulation are performed and the differences between convex and pranaldevice are also compared.

• Proceedings of the IEEK Conference
• /
• 2000.11b
• /
• pp.253-256
• /
• 2000

We report the experimental results for the coupling properties of the an side-polished single-mode fiber covered with metal-clad planar waveguide. The experimental results show that the large birefringence of a metal-clad planar waveguide facilitates the effective separation of TE and TM polarization in the spectral domain. Additionally the resonant wavelengths of the device are tuned based in the thermo-optic effect of polymer planar waveguide.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.29 no.11
• /
• pp.28-34
• /
• 2015

By incorporating a 966nm near infrared laser, we demonstrated bidirectional current triggering of between 0 and 10mA in a two-terminal planar device based on a highly resistive vanadium dioxide ($VO_2$) thin film grown by a pulsed laser deposition method. A two-terminal planar device, which had an electrode separation of $100{\mu}m$ and a $50{\mu}m-wide$ $VO_2$ conducting layer, was fabricated through ion beam-assisted milling and photolithographic techniques. A bias voltage range for stable bidirectional current triggering was determined by investigating the current-voltage curves of the $VO_2-based$ device in a current-controlled mode. Bidirectional current triggering of up to 10mA was realized by directly illuminating the $VO_2$ film with a focused infrared laser beam, and the transient responses of triggered currents were analyzed when the laser was modulated at various pulse widths and repetition rates. A switching contrast between off- and on-state currents was evaluated as ~3571, and the rising and falling times were measured as ~40 and ~20ms, respectively.

• Transactions on Electrical and Electronic Materials
• /
• v.17 no.4
• /
• pp.222-226
• /
• 2016

This paper investigated the trench process, unified field limit ring, and other products for the development of a 500 V-level unified trench gate power MOSFET. The optimal base chemistry for the device was found to be SF₆. In SEM analysis, the step process of the trench gate and field limit ring showed outstanding process results. After finalizing device design, its electrical characteristics were compared and contrasted with those of a planar device. It was shown that, although both devices maintained a breakdown voltage of 500 V, the Vth and on-state voltage drop characteristics were better than those of the planar type.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.2
• /
• pp.33-38
• /
• 2004

We have demonstrated a tunable Inter based on an asymmetric directional coupler made of a side-polished polarization maintaining fiber coupled with a polymer planar waveguide. The thermo-optic effects of the polymer planar waveguide induced by a micro-strip heater placed on the top layer of the device leads to shift of resonance wavelength of the coupler. The fabricated device exhibited wide tunable range exceeding 230 nm with 720 ㎽ of applied electrical power.

• Korean Journal of Optics and Photonics
• /
• v.14 no.4
• /
• pp.355-358
• /
• 2003

We report experimental results on the wavelength and polarization selective coupling properties of fiber-to-planar waveguide coupler having a thin metal intermediate layer. The influence of the metal layer thickness and the refractive index of the superstrate on the device properties has been measured and explained. The proposed device exhibited various application possibilities including polarizers, modulators, and sensors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.13-13
• /
• 2010

In this paper, the electrical characteristics of Fin-type SONOS (Silicon-Oxide-Nitride-Oxide-Silicon) flash memory and Planar-type SONOS flash memory are analyzed. Compared to the Planar-type SONOS device, Fin-type SONOS device shows a good short channel effect immunity. Moreover, memory characteristics such as PIE speed, Endurance and Retention of FinFET SONOS flash are batter than that of conventional Planar-type SONOS flash memory.