• 제목/요약/키워드: Planar(top-top) structure

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산화금속의 전기적 스위칭 특성 연구 (A study on the electrical switching properties of oxide metal)

  • 최성재;이원식
    • 한국인터넷방송통신학회논문지
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    • 제9권3호
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    • pp.173-178
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    • 2009
  • 금속산화물 박막 소자를 제작하여 전기적 특성을 조사하였다. 소자는 Electrode를 TOP-TOP구조로 제작하였으며 스위칭 특성을 연구하기 위해 전극간의 산화금속박막의 전도특성이 측정되었다. 소자의 저항변화는 전압을 선형적으로 인가하여 측정하였다. 제작된 소자는 MIM구조로써 외부에서 인가하는 전기적 신호에 의하여 전기전도도가 큰 On-state와 전기전도도가 낮은 Off-state로 바뀌는 특성을 나타내었다. $Si/SiO_2/MgO$ 소자는 Forming에 의해 저항이 큰 상태에서 저항이 작은 상태로 전기적 특성이 변화하면서 스위칭 특성을 보였다. 본 연구를 통하여 산화금속은 차세대 비휘발성 메모리로는 물론 다른 전기적 응용이 기대되는 물질임을 확인하게 되었다.

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두 평면 전극 사이의 절연체 구조물에 의해 유도되는 양의 유전영동을 이용한 삼차원 입자 정렬기 (A Three-Dimensional Particle Focusing Channel Using the Positive Dielectrophoresis (pDEP) Guided by a Dielectric Structure Between Two Planar Electrodes)

  • 추현정;도일;조영호
    • 대한기계학회논문집A
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    • 제33권3호
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    • pp.261-264
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    • 2009
  • We present a three-dimensional (3D) particle focusing channel using the positive dielectrophoresis (pDEP) guided by a dielectric structure between two planar electrodes. The dielectric structure between two planar electrodes induces the maximum electric field at the center of the microchannel, and particles are focused to the center of the microchannel by pDEP as they flow from the single sample injection port. Compared to the previous 3D particle focusing methods, the present device achieves the simple and effective particle focusing function without any additional fluidic ports and top electrodes. In the experimental study, approximately 90 % focusing efficiency were achieved within the focusing length of 2mm, on both x-z plane (top-view) and y-z plane (side-view) for $2{\mu}m$-diameter polystyrene (PS) bead at the applied voltage over 15 Vp-p (square wave) and at the flow rate below 0.01 ${\mu}l$/min. The present 3D particle focusing channel results in a simple particle focusing method suitable for use in integrated microbiochemical analysis system.

수평 원형 디스크가 로딩된 반원 디스크 초광대역 모노폴 안테나 (Vertically Half Disc-Loaded Ultrawideband Monopole Antenna (VHDMA) with Horizontally Top-Loaded Small Disc)

  • 이재욱;조춘식;김종면
    • 한국전자파학회논문지
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    • 제15권11호
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    • pp.1051-1061
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    • 2004
  • 본 논문에서는 반원형 및 반타원형 디스크가 급전점에 수직으로 로딩된 단순한 광대역 모노폴 안테나 구조에 급전점에는 추가적인 공진 구조를, 수직 모노폴 안테나의 끝단에는 수평으로 추가적인 소형 디스크가 로딩되는 초광대역 안테나의 특성에 관하여 시뮬레이션과 측정이 수행되었다. 설계된 초광대역 송신용 안테나로부터 가우시안 펄스의 전달 특성에 관하여 살펴보며 제안된 안테나의 수평방향을 단면으로 보았을 경우의 복사패턴이 등방향성 응답을 가짐을 알 수 있었다. 더욱이, 측정 및 시뮬레이션 결과로부터 소형이면서 광대역 특성을 보임을 알 수 있다. 제안된 수평방향의 소형 디스크가 장착된 반원형 디스크 모노폴 안테나의 측정결과로부터, 크기와 전기적인 성능 측면에서 살펴보았을 때 제안된 구조가 단순히 원형 디스크가 수직으로 로딩된 모노폴 안테나에 비해 견줄만 함을 알 수 있었다. 특히 본 논문을 통하여 제작된 안테나는 PCB를 이용한 프린팅 안테나에서 자주 발생되는 표면파 손실 및 유전체 손실과 같은 현상이 발생되지 않으므로 Return Loss의 성능이 곧 복사되는 효율과 밀접한 관계가 있다.

Optimal placement of elastic steel diagonal braces using artificial bee colony algorithm

  • Aydin, E.;Sonmez, M.;Karabork, T.
    • Steel and Composite Structures
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    • 제19권2호
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    • pp.349-368
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    • 2015
  • This paper presents a new algorithm to find the optimal distribution of steel diagonal braces (SDB) using artificial bee colony optimization technique. The four different objective functions are employed based on the transfer function amplitude of; the top displacement, the top absolute acceleration, the base shear and the base moment. The stiffness parameter of SDB at each floor level is taken into account as design variables and the sum of the stiffness parameter of the SDB is accepted as an active constraint. An optimization algorithm based on the Artificial Bee Colony (ABC) algorithm is proposed to minimize the objective functions. The proposed ABC algorithm is applied to determine the optimal SDB distribution for planar buildings in order to rehabilitate existing planar steel buildings or to design new steel buildings. Three planar building models are chosen as numerical examples to demonstrate the validity of the proposed method. The optimal SDB designs are compared with a uniform SDB design that uniformly distributes the total stiffness across the structure. The results of the analysis clearly show that each optimal SDB placement, which is determined based on different performance objectives, performs well for its own design aim.

Performance of a Planar Leaky-Wave Slit Antenna for Different Values of Substrate Thickness

  • Hussain, Niamat;Kedze, Kam Eucharist;Park, Ikmo
    • Journal of electromagnetic engineering and science
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    • 제17권4호
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    • pp.202-207
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    • 2017
  • This paper presents the performance of a planar, low-profile, and wide-gain-bandwidth leaky-wave slit antenna in different thickness values of high-permittivity gallium arsenide substrates at terahertz frequencies. The proposed antenna designs consisted of a periodic array of $5{\times}5$ metallic square patches and a planar feeding structure. The patch array was printed on the top side of the substrate, and the feeding structure, which is an open-ended leaky-wave slot line, was etched on the bottom side of the substrate. The antenna performed as a Fabry-Perot cavity antenna at high thickness levels ($H=160{\mu}m$ and $H=80{\mu}m$), thus exhibiting high gain but a narrow gain bandwidth. At low thickness levels ($H=40{\mu}m$ and $H=20{\mu}m$), it performed as a metasurface antenna and showed wide-gain-bandwidth characteristics with a low gain value. Aside from the advantage of achieving useful characteristics for different antennas by just changing the substrate thickness, the proposed antenna design exhibited a low profile, easy integration into circuit boards, and excellent low-cost mass production suitability.

SIMULATION OF THIN-FILM FIELD EMITTER TRIODE

  • Park, Kyung-Ho;Lee, Soon-Il;Koh, Ken-Ha
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.651-654
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    • 2002
  • We carried out 2-dimensional numerical calculations of electrostatic potential for triode field emitters with planar cathodes using the finite element method. As it turned out, the conventional triode structure with a planar cathode suffered from large gate current and wide spreading of emitted electrons. To circumvent these shortcomings, we proposed a new triode structure. By simply inserting a conducting layer of proper thickness on top of the cathode layer, we were able to modify the electric field distribution on the cathode surface so that low gate current and electron-focusing effect were achieved, simultaneously.

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Studies on post-tensioned and shaped space-truss domes

  • Schmidt, Lewis C.;Li, Hewen
    • Structural Engineering and Mechanics
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    • 제6권6호
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    • pp.693-710
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    • 1998
  • This paper concerns studies on the shape formation of post-tensioned and shaped steel domes. The post-tensioned and shaped steel domes, assembled initially at ground level in an essentially flat condition, are shaped to a curved space form and erected into the final position by means of a post-tensioning technique. Based on previous studies on this shape formation principle, three post-tensioned and shaped steel domes have been constructed. The results of the shape formation tests and finite element analyses are reported in this paper. It is found that the first two test domes did not furnish a part-spherical shape as predicted by finite element analyses, because the movements of some mechanisms were not controlled sufficiently. With a revised post-tensioning method, the third dome obtained the theoretical prediction. The test results of the three post-tensioned and shaped domes have shown that a necessary condition to form a desired space shape from a planar layout with low joint stiffnesses is that the movements of all the existing mechanisms must be effectively controlled as indicated by the finite element analysis. The extent of the maximum elastic deformation of a post-tensioned and shaped steel structure is determined by the strength of the top chords and their joints. However, due to the semi-rigid characteristic of the top chord joints, the finite element analyses cannot give a close prediction for the maximum elastic deformations of the post-tensioned and shaped steel domes. The results of the current studies can be helpful for the design and construction of this type of structure.

슬릿 구조와 다층 구조를 이용한 소형 원형 편파 마이크로스트립 안테나 (A Compact Circular-Polarized Microstrip Antenna Using the Slit and Multi-Layer Structure)

  • 조상혁;표성민;김정민;이인영;김영식
    • 한국전자파학회논문지
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    • 제20권3호
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    • pp.296-302
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    • 2009
  • 본 논문에서는 슬릿 구조와 다층 구조를 이용하여 소형 평판 안테나를 제안하였다. 제안한 안테나는 다층 FR4 기판을 이용하여 설계 및 제작하였으며 넓은 임피던스 대역폭을 갖는 소형 안테나로써, 가볍고, 저렴한 장점을 가지고 있으며 GPS 대역 중심 주파수 1,575.42 MHz에서 원형 편파 특성을 갖는다. 또한, 기판의 최상층의 슬릿의 길이와 폭을 조절하여, 대역폭을 거의 유지한 상태로, 공진 주파수를 낮추어 보다 소형화 하였다. 안테나 크기는 $20{\times}20{\times}4.0\;mm^3$이고 측정된 안테나 이득은 0.5 dBi, 대역폭은 VSWR 2:1에서 4.4 %(1,542$\sim$1,612 MHz), 3 dB 축비(axial-ratio) 대역폭은 약 15 MHz(1 %)이다.

Structural Design and Construction for Tall Damped Building with Irregularly-Shaped Plan and Elevation

  • Yamashita, Yasuhiko;Kushima, Soichiro;Okuno, Yuuichirou;Morishita, Taisei
    • 국제초고층학회논문집
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    • 제7권3호
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    • pp.255-264
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    • 2018
  • This paper introduces three distinctive means for the use of a 189-meter high damped structure ensuring safety against earthquake: 1. Realization of L-shaped elevational structural planning: The bottom and top of the tower have belt trusses and hat trusses respectively to restrain the bending deformation. Furthermore, large-capacity oil dampers (damping force 6,000 kN) are installed in the middle part of the tower to restrain the higher-mode deformation. 2. Realization of L-shaped planar structural planning: We devised a means of matching the centers of gravity and rigidity by adjusting planar rigidity. Moreover, viscous damping devices are located at the edges of the L-shaped plan, where torsional deformation tends to be amplified. We call this the "Damping Tail" system. 3. Composite foundation to equalize deformations under different loading conditions: We studied the vertical and horizontal deformations using sway-rocking and 3D FEM models including the ground, and applied multi-stage diameter-enlarged piles to the tower and a mat foundation to the podium to keep the foundations from torsional deformations and ensure structural safety.

Improvement of carrier transport in silicon MOSFETs by using h-BN decorated dielectric

  • Liu, Xiaochi;Hwang, Euyheon;Yoo, Won Jong
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2013년도 춘계학술대회 논문집
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    • pp.97-97
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    • 2013
  • We present a comprehensive study on the integration of h-BN with silicon MOSFET. Temperature dependent mobility modeling is used to discern the effects of top-gate dielectric on carrier transport and identify limiting factors of the system. The result indicates that coulomb scattering and surface roughness scattering are the dominant scattering mechanisms for silicon MOSFETs at relatively low temperature. Interposing a layer of h-BN between $SiO_2$ and Si effectively weakens coulomb scattering by separating carriers in the silicon inversion layer from the charged centers as 2-dimensional h-BN is relatively inert and is expected to be free of dangling bonds or surface charge traps owing to the strong, in-plane, ionic bonding of the planar hexagonal lattice structure, thus leading to a significant improvement in mobility relative to undecorated system. Furthermore, the atomically planar surface of h-BN also suppresses surface roughness scattering in this Si MOSFET system, resulting in a monotonously increasing mobility curve along with gate voltage, which is different from the traditional one with a extremum in a certain voltage. Alternatively, high-k dielectrics can lead to enhanced transport properties through dielectric screening. Modeling indicates that we can achieve even higher mobility by using h-BN decorated $HfO_2$ as gate dielectric in silicon MOSFETs instead of h-BN decorated $SiO_2$.

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