• 대한전자공학회논문지
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• 제27권4호
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• pp.547-554
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• 1990

Considering channel length modulation, we proposed a GaAs MESFET model for circuit simulator. In existing M.S. Shur's model, two different models are used according to pinch-off voltage of devices. One model for both type of devices was proposed. In this model we introduced weighted switching function(WSF) based on channel length modulation. This proposed model showed better accuracy comparing with existing single law model and complete velocity saturation model.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1990년도 한국자동제어학술회의논문집(국제학술편); KOEX, Seoul; 26-27 Oct. 1990
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• pp.1259-1264
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• 1990

During the past two decades, a lot of researches have been done on the synthesis of grassroot heat exchanger networks(HEN). However, few have been dedicated to retrofit of existing heat exchanger networks, which usually use more amount of utilities (i.e. steam and/or cooling water) than the minimum requirements. This excess gives motivation of trades-off between energy saving and rearranging investment. In this paper, an algorithmic-evolutionary synthesis procedure for retrofitting heat exchanger networks is proposed. It consists of two stages. First, after the amount of maximum energy recovery(MER) is computed, a grass-root network featuring minimum number of units(MNU) is synthesized. In this stage, a systematic procedure of synthesizing MNU networks is presented. It is based upon the concept of pinch, from which networks are synthesized in a logical way by the heuristics verified by the pinch technology. In the second stage, since an initial feasible network is synthesized based on the pre-analysis result of MER and must-matches, an assignment problem between new and existing units is solved to minimize total required additional areas. After the existing units are assigned, the network can be improved by switching some units. For this purpose, an improvement problem is formulated and solved to utilize the areas of existing units as much as possible. An example is used to demonstrate the effectiveness of the proposed method.

• 한국전자파학회논문지
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• 제12권6호
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• pp.890-898
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• 2001

Modified Materka-Kacprzak 대신호 MESFET(Metal Semiconductor Field Effect Transistor) model을 사용하여 4H-SiC MESFET의 대신호 모델링을 수행하였다. Silvaco사의 소자 시뮬레이터인 ATLAS를 사용하여 4H-SiC MESFET 소자 시뮬레이션을 수행하고, 이 결과를 modified Materka 대신호 모델을 사용하여 모델링 하였다. 시뮬레이션 및 모델링 결과는 -8 V의 pinch off 전압과 $V_{GS}$ =0 V, $V_{DS}$ =25 V에서 $I_{DSS}$270 mA/mm, $G_{m}$ =52.8 ms/mm를 얻을 수 있었고, 전력 특성 시뮬레이션을 통해 2GHz, $V_{GS}$ =-4V, $V_{DS}$ =25 V에서 10dB의 Gain과 34dBm(1 dB compression point)의 출력전력, 7.6W/mm의 전력밀도, 37%의 PAE(power added efficiency)를 얻을 수 있었다.다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.229-232
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• 2001

Modified Materka-Kacprzak 대신호 MESFET(Metal Semiconductor Field Effect Transistor) model을 사용하여 4H-SiC MESFET의 대신호 모델링을 수행하였다. Silvaco사의 소자 시뮬레이터인 ATLAS를 사용하여 4H-SiC MESFET 소자 시뮬레이션을 수행하고, 이 절과를 modified Materka 대신호 모델을 사용하여 모델링 하였다. 시뮬레이션 및 모델링 결과는 -8V의 pinch off 전압과 V/sub GS=0V, V/sub DS=25V에서 I/sub DSS=270㎃/㎜, G/sub m=45㎳/㎜를 얻을 수 있었고, 진력 특성 시뮬레이션을 통해 2㎓, V/sub GS=-4V, V/sub DS=25V에서 1()dB의 Gain과 34dBm(1dB compression point)의 출력전력, 7.6W/㎜의 전력밀도, 37%의 PAE(power added efficiency)를 얻을 수 있었다.

• 한국정보통신학회논문지
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• 제7권4호
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• pp.743-749
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• 2003

본 논문에서는, cold-HEMT의 게이트에 핀치오프 전압보다 약간 낮은 전압을 가함으로써 게이트 손상문제로부터 자유로우며 부가적인 DC 측정을 필요로 하지 않는 새로운 HEMT 소신호 모델링 방법을 제시한다. 제시된 방법에 의해서 모델링된 회로의 S-파라미터 이론치는 49개의 동작 바이어스점에서 측정치와 62GHz까지 뛰어난 일치를 보였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.189-192
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• 2001

We have studied fabrication processes that form asymmetric $\Gamma$-gate with a 0.1${\mu}{\textrm}{m}$ gate length in MMIC's(Monolithic Microwave Integrated Circuits). Asymmetric $\Gamma$-gate was fabricated using mixture of PMMA and MCB. Thus pseudomorphic high electron mobility transistor (PHEMT's) with 0.1${\mu}{\textrm}{m}$ gate length was fabricated via several steps such as mesa isolation, metalization, recess, passivation. PHEMT's has the -1.75 V of pinch-off voltage (Vp), 63 mA of drain saturation current(Idss and 363.6 mS/mm of maximum transconductance (Gm) in DC characteristics and current gain cut-off frequency of 106 GHz and maximum frequency of oscillation of 160 GHz in RF characteristics.

• 전산구조공학
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• 제3권1호
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• pp.59-70
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• 1990

p-수렴 유한요소법은 보간함수의 차수 p를 증가시키는 동안 해석하려는 영역의 분할을 고정시키는 유한요소해석의 새로운 접근방법이다. 이 논문에서는 혼합사상함수에 기초한 새로운 p-수렴 계층요소를 이용한 쉘 모델의 컴퓨터 수행에 초점을 두었다. Pinch Test문제와 원통형 쉘지붕문제를 통해 제안된 쉘 모델의 강체운동, round-off 오차, 그리고 수렴성등이 검토되었다.

• 한국초전도ㆍ저온공학회논문지
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• 제8권4호
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• pp.34-38
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• 2006

Cycle analysis was performed in order to find the optimum design point of the LNG Boil-off gas re-liquefaction system. Thermodynamic analysis revealed the system could be defined by three state variables. Thus the system performance could be described by the three cold endpoint temperatures of the three-pass heat exchanger. This enabled us to investigate the cycle performance in terms of the heat exchanger parameters. To get access to the cycle states of higher system performances, larger heat exchangers were found necessary. Also the thermal pinch in cryogenic heat exchangers was found to act as a limiting factor to the system performance.

• 한국전기전자재료학회논문지
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• 제33권1호
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• pp.78-82
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• 2020

In this study, MOSFETs fabricated on Si-doped, MBE-grown β-Ga₂O₃ are demonstrated. A Si-doped Ga₂O₃ epitaxial layer was grown on a Fe-doped, semi-insulating 1.5 cm × 1 cm Ga₂O₃ substrate using molecular beam epitaxy (MBE). The fabricated devices are circular type MOSFETs with a gate length of 3 ㎛, a source-drain spacing of 20 ㎛, and a gate width of 523 ㎛. The device exhibited a good pinch-off characteristic, a high on-off drain current ratio of approximately 2.7×10⁹, and a high breakdown voltage of 1,080 V, which demonstrates the potential of Ga₂O₃ for power device applications including electric vehicles, railways, and renewable energy.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1823-1826
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• 2002

The purpose of this experiment was to develope Triggered Vacuum Switch (TVS) for the high voltage and high current. The TVS has an array of rods of alternate polarity in which a fixed gap spacing is maintained between the rods. The cross section of each rod has trapezoidal shape. It consists of electrode, ceramic chamber, getter and trigger. Currently, triggered vacuum switch (TVS) with seal-off has been designed and fabricated at PAL. An experimentation and trigger devices for TVS were designed for testing characteristics of electricity. For making the prototype of TVS, it is developed of fabrication process and fined of electrode material. The fabrication of the TVS is a lot of process which have manufacturing of part, chemical clean, ceramic brazing and metal welding. The fabricated TVS is tested of leak for vacuum, hold-off voltage and conditioning of trigger system. The TVS has pinch-off after it is removed of gas in the TVS and activated of getter in degassing furnace. The prototype TVS tested about 20 kV, 75 kA, 83 ${\mu}s$ with 100 kJ capacitor bank and inductance 5 ${\mu}H$. This paper describes the results of tests and the characteristics of the switch.