• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2012.10a
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• pp.402-403
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• 2012

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.7
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• pp.30-36
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• 1997

Bump bonded piezoesistive silicon accelerometer was fabricated by the porous silicon micromachining and th eprocess technique of integrated circuit. The output voltage of the accelerometer fabricated on (111)-oreiented Si substrates with n/n$^{+}$n triple layers showed good linear characteristic of less than 1%. The measured sensitivity and the resonant frequency was about 743 .mu.V/g and 2.04 kHz, respectively. And the transverse sensitivity of 5.2% was measured from the accelerometer. Also, to investigate an influence on the output characteristics of the sensor due to bump bonding, the values of the piezoresistors were measured through thermal-cycling test in the temperature variation form -50 to 120.deg. C. Then, there was 0.014% resistance changes about 3.61 k.ohm., so sthe output charcteristics of the sensor was less affected by bump bonding.g.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.23 no.12
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• pp.1082-1089
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• 2013

3-Axis sensor measurement system is needed for measuring ride quality of elevator. But because 3-Axis piezoelectric accelerometer is expensive. We developed 3-Axis sensor system which is suitable for measuring ride quality of elevator using cheap MEMS sensor. There are two types of MEMS sensor that are piezoresistive and capacitive type. The excellence of piezoresistive type in characteristic of frequency response and noise is confirmed compare to capacitive type as a result of this paper's experiment and reference. 3-Axis system using MEMS sensor needs MEMS's proper frequency response characteristic. Additionally noise characteristic of sensor and circuit, stiffness of assembly are needed for deciding frequency range and accuracy of amplitude.

• Transactions on Electrical and Electronic Materials
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• v.18 no.2
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• pp.78-88
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• 2017

Cantilever beam MEMS piezoelectric accelerometers are the simplest and most widely used accelerometer structure. This paper discusses the design of a piezoelectric accelerometer exclusively for SHM applications. While such accelerometers need to operate at a lower frequency range, they also need to possess high sensitivity and low noise floor. The availability of a simple model for deflection, charge, and voltage sensitivities will make the accelerometer design procedure less cumbersome. However, a review of the open literature suggests that such a model has not yet been proposed. In addition, previous works either depended on FEM analysis or only reported on the fabrication and characterization of piezoelectric accelerometers. Hence, this paper presents, for the first time, a simple analytical model developed for the deflection, induced voltage, and charge sensitivity of a cantilever beam piezoelectric accelerometer.The model is then verified using FEM analysis for a range of different cases. Further, the model was validated by comparing the induced voltages of an accelerometer estimated using this model with experimental voltages measured in the accelerometer after fabrication. Subsequently, the design of an accelerometer is demonstrated for SHM applications using the analytical model developed in this work. The designed accelerometer has 60 mV/g voltage sensitivity and 2.4 pC/g charge sensitivity, which are relatively high values compared to those of the piezoresistive and capacitive accelerometers for SHM applications reported earlier.

• Transactions of the Korean Society of Automotive Engineers
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• v.4 no.5
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• pp.9-15
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• 1996

A silicon microaccelerometer is designed and fabricated using silicon epitaxial layers for automotive electronic airbag applications. A cantilever structure is chosen for high sensitivity and piezoresistive detection method is adopted for circuit simplicity and low cost. An optimum design is used to find optimum microstructure sizes for maximum sensitivity subject to performance requirements and design constraints on natural frequency, damping ratio, maximum allowable stress and microfabrication limitations. The microaccelerometer is fabricated by micromachining processing steps, composed of material-selective and orientation-dependent chemical etching techniques. Fabricated prototype shows a sensitivity of 88.6$\mu\textrm{V}$/g within a resonant frequency of 1.75KHz. Estimated performance of the microaccelerometer is compared with measured one. Discrepancy between the theoretical values and the experimental values is discussed together with possible sources of the errors.

• Journal of Sensor Science and Technology
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• v.9 no.3
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• pp.196-202
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• 2000

In this paper, we proposed the new bridge combination detection method for three dimensional piezoresistive silicon accelerometer, and the accelerometer with SOI structures was fabricated by bulk micromachining technology for using higher temperature than $200^{\circ}C$. The sensitivities of fabricated accelerometer for X, Y and Z-axis acceleration were about 8mV/V G, 8mV/V G and 40mV/V G. The nonlinearity of the output voltage was 1.6%FS and cross-axis sensitivity was within 4.6%. We confirmed that the three bridges detection method is very simple and the output characteristics of this accelerometer were similar to arithmetic circuit method accelerometer. The temperature characteristics of SOI structure accelerometer showed high operating temperature and good stability. And the temperature coefficient of offset voltage and sensitivity were $1033ppm^{\circ}C^{-1}$ and $1145ppm^{\circ}C$ respectively.

• Journal of Sensor Science and Technology
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• v.8 no.1
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• pp.38-44
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• 1999

In this paper, we have constructed a self-diagnostic circuit which could detect erroneous signals in most cases that a eight-beam piezoresistive accelerometer were destroyed more than its one beam. To confirm the function of the circuit, PSPICE simulation was carried out. An IC chip was fabricated with a layout of KA 324 amplifier using a bipolar standard processing. After a package of the chip was sealed using a plastic package with 24 pins, the self-diagnostic characteristics were investigated. Then, the measured self-diagnostic characteristics of the circuit were compared with the PSPICE simulated result.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.346-355
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• 1997

In this paper, the analyses of the stress disturibution and frequency characteristics of silicon microstructures for an accelerometer were performed using the general purpose finite element simulation program, ANSYS. From the analyses, we determined the parameter values of a new 6-beam piezoresistive accelerometer applicable to the accelerometer's specification in airbag system of automobile. Then, the mass paddle radius, beam length, beam width, and beam thickness of the designed accelerometer were$500{\mu}m$, $350{\mu}m$, $100{\mu}m$, and $5{\mu}m$, respectively and two different seismic masses with 0.4 mg and 0.8 mg were defined on the same sensor structure. The designed 6- beam accelerometers were fabricated on the selectively diffused (111)-oriented $n/n^{+}/n$ silicon substrates and the characteristics of the fabricated accelerometers were investigated. Then, we used a micromachining technique using porous silicon etching method for the formation of the micromechanical structure of the accelerometer.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.20 no.2
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• pp.408-413
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• 1996

A self-diagnostic, air-damped, piezoresitive, cantilever-beam microaccelerometer has been designed, fabricated and tested for applications to automotive electronic airbag systems. A skew-symmetric proof-mass has been designed for self-diagnostic capability and zero transverse sensitivity. Two kinds of multi-step anisotropic etching processes are developed for beam thickness control and fillet-rounding formation, UV-curing paste has been used for sillicon-to-glass bounding. The resonant frequency of 2.07kHz has been measured from the fabricated devices. The sensitivity of 195 $\mu{V}$/g is obtained with a nonlinearity of 4% over $\pm$50g ranges. Flat amplitude response and frequency-proportional phase response have been obserbed, It is shown that the design and fabricaiton methods developed in the present study yield a simple, practical and effective mean for improving the performance, reliability as well as the reproducibility of the accelerometers.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.7
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• pp.26-33
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• 1999

In order to examine the effect of beam location n the performance of bridge type piozoresistive silicon accelerometer, three sensors having different location of beams were simulated by FEN(finite element method) and fabricated by RIE(reactive ion etching) and KOH etching method using SDB(silicon direct bonding) wafer, Results of the FEM simulation present that the 1st resonace frequency and Z axis sensitivity of each sensor are identical but the 2nd, and the 3rd resonace frequency and X, Y axis sensitivity are different. Even though the 1st resonance frequency and Z axis sensitivity measured from fabricated sensors do not perfectly coincide with each other, all 3 type sensors present 180 ~ 220N/G of Z sensitivity at 5 V supply voltage and 1.3 ~ 1.7kHz of the 1st resonance frequency and about 2% of lateral sensitivity.