• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.110-110
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• 1999

Polyvinylidenefluoride (PVDF) is most used in piezoelectric polymer industry. Electrode effect on the electrical properties of PVDF has been investigated. al has been used due to fair adhesion for PVDF. Work function of metal plays an important role on the electrical properties of ferroelectrics for top and /or bottom electrode. However, Al has much lower work function than Pt or Au and so leakage current of Al/PVDF/Al may be large. Pt or Au has not been used for electrode of PVDF system due to poor adhesion. PVDF irradiated by Ar+ ion beam with O2 environment takes good adhesion to inert metal. Contact angle of PVDF to triple distilled water was reduced from 75$^{\circ}$ to 31$^{\circ}$ at 1$\times$1015 Ar+/cm2. Working pressure was 2.3$\times$10-4 Torr and base pressure was 5$\times$10-6 Torr. Pt was deposited by ion beam sputtering and thickness of pt film was about 1000$\AA$. in previous study, enhancing adhesion of Pt on PVDF was shown. in this study, effect of electrode on PVDF will be represented.

• Transactions on Electrical and Electronic Materials
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• v.18 no.6
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• pp.334-337
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• 2017

In this paper, to develop the ceramics with high $d_{33}$ and high $Q_m$ for ultrasonic transducer applications, $0.10Pb(Ni_{1/3}Nb_{2/3})O_3-0.07Pb(Mn_{1/3}Nb_{2/3})O_3-0.83Pb(Zr_{0.5}Ti_{0.5})_{0.83}O_3$ (PNN-PMN-PZT) ceramics were sintered at $940^{\circ}C$ using $CuO-Li_2CO_3-Bi_2O_3$ (CLBO) as a sintering aid by a traditional solid-state technique. The influence of zinc oxide additive on the physical properties of the prepared ceramics were systematically investigated. The R-T (rhombohedral-tetragonal) phase coexistence was found in the ceramics without zinc oxide additive and with increasing amounts of ZnO additive, the specimens showed a tetragonal phase. The formation of a liquid phase between ZnO and $Bi_2O_3$ contributed significantly to the grain growth of specimens. For the 0.1 wt% ZnO ceramics, the optimal physical properties of $d_{33}=370pC/N$, ${\varepsilon}_r=1,344$, $k_p=0.621$, and $Q_m=1,523$ were obtained.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.158-164
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• 1995

Solid solutions Sr$_{2}$(Ta$_{1-x}$ Nb$_{x}$)$_{2}$O$_{7}$, (x=0.0-1.0), composed of strontium tantalate(Tc=-107.deg. C) and strontium-niobate(Tc=1342.deg. C) were prepared by the conventional mixed oxide method and the flux method(molten salt synthesis method). Phase relation, sintering temperature, grain-orientation and dielectric properties for sintered ceramic samples were investigated with different compositions. Both Curie temperature and dielectric constant at Curie temperature were increased, and sintering behavior and the degree of grain-orientation were improved with the increase of Nb content. The single phase Sr$_{2}$(Ta/sib 1-x/Nb$_{x}$)$_{2}$O$_{7}$ powder was synthesized by using the flux method at lower temperatures, and sintering temperature was also reduced by using the flux method-derived powder than using the mixed oxide-derived powder. Sintering characteristics and dielectric properties of the specimens prepared by the flux method were better than those derived through the conventional mixed oxide method.thod.hod.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.11
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• pp.2093-2096
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• 2011

In this study, lead-free $(Na_{0.5}K_{0.5})NbO_3-BiTiO_3$ ceramics were fabricated by a conventional mixed oxide method. Structural and electrical properties of lead-free $(Na_{0.5}K_{0.5})NbO_3$ ceramics with the variation of $BiTiO_3$ were investigated. The results of X-ray diffraction analysis showed a typical polycrystalline perovskite structure without presence of the second phase in all specimens. Sintered density increased with an increasing of BTO and the specimen added with 0.07 mol% of $BiTiO_3$ showed the maximum value of 97.8%. Average grain size decreased and densification increased with an increasing of $BiTiO_3$ contents. The electromechanical coupling factor of the 0.01 mol% $BiTiO_3$ doped NKN specimens was 0.32. Dielectric constant, dielectric loss and Curie temperature of the 0.07 mol% $BiTiO_3$ doped NKN specimens were 1185, 0.145% and $400^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.321-322
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• 2007

In this thesis, the sintering properties and piezoelectric properties of $Pb[(Co_{0.5}W_{0.5})_{0.03}(Ni_{1/3}Nb_{2/3})_{0.07}(Zr_{0.52}Ti_{0.48})_{0.9}]O_3+0.5[wt%]MnO_2$ ceramics has been systematically investigated as a function of the sintering temperature after manufacturing the specimens with a general method. The lattice constant from the analysis of crystal structure showed that the pychlore structure was decreased with the increase of the sintering temperature. Density was decreased by increasing $B_2O_3$. TCFr was showed its minimum variation rate of 0.35~-0.52[%] in the sintered temperature 950[$^{\circ}C$], $B_2O_3$ 3[wt%]. The electromechanical coupling coefficient (Kp) showed its maximum of 31.116[%] in the sintered temperature 1050[$^{\circ}C$], and its minimum of 20.220[%] in the sintered temperature 1150[$^{\circ}C$].

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.172-172
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• 2010

In the area of optoelectronic devices based on GaN and related ternary compounds, the two-dimensional system like as quantum wells (QWs) has been investigated as an effective structure for improving the light-emitting efficiency. Generally, the quantum well active regions in III-nitride light-emitting diodes grown on conventional c-plane sapphire substrates have critical problems given by the quantum confined Stark effect (QCSE) due to the effects of strong piezoelectric and spontaneous polarizations. However, the QWs grown on nonpolar templates are free from the QCSE since the polar-axis lies within the growth plane of the template. Also the unique characteristic of linear polarized light emission from nonpolar QW structures is attracting attentions because it is proper to the application of back-light units of liquid crystal display. In this study, we characterized optical properties of the a-plane InGaN/GaN QW structures by temperature-dependent photoluminescence (TDPL) measurements. From the photoluminescence (PL) spectrum measured at 300 K, green emission centered at 520 nm was observed for the QW region. Since indium incorporation on nonpolar QWs is lower than that on c-plane, this high indium-doping on a-plane InGaN QWs is not common. Therefore, the effect of high indium composition on optical properties in a-plane InGaN QWs will be extensively studied.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.610-615
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• 2022

BaTiO₃ is one of the ferroelectric materials with excellent dielectric properties such as high dielectric constant, low dielectric loss, and is widely used for the manufacturing of capacitors, piezoelectric converters, microsensors, and ferroelectric memories. Inkjet printing is a technology which uses digital and contactless methods which significantly improves flexibility associated with material and structural design, reducing manufacturing costs. Therefore, the top and bottom electrodes, BaTiO₃ ink, and photocurable resin were all printed by an inkjet to produce a BaTiO₃ capacitor. The properties of the printed thin film were analyzed. It was confirmed that the photocurable resin ink was well-infiltrated between the BaTiO₃ powder particles printed by inkjet. The dielectric properties of the capacitor such as dielectric constant which varies in accordance with frequency, polarization and tunability that changes with voltage, were measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.478-480
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• 2001

Fe-base amorphous films exhibit large saturation magnetostriction and soft magnetic Properties, which make them suitable for strain sensor applications. Most important material properties for the performance of these elements are the superior soft magnetic properties, such as high permeability and small coercive force, as well as magnetoelastic properties. It is well known that the strain generated in film deposition and/or post-heat treatment processes is one of important material properties, which effects on the soft magnetic properties of the film via magnetoelastic coupling. In this study, the effect of an isotropic strain in plane of magnetic films have been performed experimently. Amorphous films with the composition of (F $e_{90}$ $Co_{10}$)$_{78}$S $i_{l2}$ $B_{10}$ were employed in this study. The film with 5${\mu}{\textrm}{m}$ thick was deposed onto the polyimide substrate with 50${\mu}{\textrm}{m}$ thick by virtue of RF sputtering. The film was subject to post annealing with a static magnetic field with 500Oe magnetic field intensity at 35$0^{\circ}C$ for 1 hour. The polyimide substrate with the film was bonded with an adhesive on PZT piezoelectric substrate with 600${\mu}{\textrm}{m}$ thick in applying voltage of 500V. The change in MH loops of films due to the isotropic strain was measured by using VSM. The coercive force was evaluated from MH loops. It has shown in the results that M-H loops of films are subject to change considerably with a dc voltage, resulting of the magnetization rotation from normal to plane direction as the applied voltage is changed from 500V to 250V.50V.V.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.4 s.346
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• pp.1-7
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• 2006

AlN thin films have been fabricated by using RF magnetron sputtering method and their crystal orientations, microstructures and piezoelectric properties have been investigated with variation of the $Ar/N_2$ gas ratio and the substrate temperature. Particularly, when the $Ar/N_2$ gas ratio and the substrate temperature are 10/10 (sccm) and $400^{\circ}C$, respectively, the AlN thin film exhibits the highest (002) orientation. The result of the surface roughness measurement by using AFM shows that the surface roughness becomes better as the partial pressure of $N_2$ increases at the substrate temperature of $400^{\circ}C$ and it becomes the smallest value of 2.1 nm when $Ar/N_2$ is 0/20 (sccm). The AFM measurement also shows that when $Ar/N_2$ is 10/10 (sccm) shows that surface roughness becomes better as the substrate temperature increases from room temperature up to $300^{\circ}C$ and then it becomes worse as the substrate temperature goes up from $300^{\circ}C$. At the substrate temperature of $300^{\circ}C$ and $Ar/N_2$=10/10 (sccm), the surface roughness is 3.036 nm. The piezoelectric constant ($d_{33}$) of AlN thin film is measured by Pneumatic probe method. The measurement shows that the AlN thin film with the highest (002) orientation, fabricated at $Ar/N_2$=10/10 (sccm) and the substrate temperature of $400^{\circ}C$, has the best Piezoelectric constant ($d_{33}$) of 6.01 pC/N.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.83-89
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• 2015

In this paper, we propose a fabrication technique for enhanced electrical properties of piezoelectric thick films with excellent patterning property using sol-infiltration and a direct-patterning process. To achieve the needs of high-density and direct-patterning at a low sintering temperature (< $850^{\circ}C$), a photosensitive lead zirconate titanate (PZT) solution was infiltrated into a screen-printed thick film. The direct-patterned PZT films were clearly formed on a locally screen-printed thick film, using a photomask and UV light. Because UV light is scattered in the screen-printed thick film of a porous powder-based structure, there are needs to optimize the photosensitive PZT sol infiltration process for obtaining the enhanced properties of PZT thick film. By optimizing the concentration of the photosensitive PZT sol, UV irradiation time, and solvent developing time, the hybrid films prepared with 0.35 M of PZT sol, 4 min of UV irradiation and 15 sec solvent developing time, showed a very dense with a large grain size at a low sintering temperature of $800^{\circ}C$. It also illustrated enhanced electrical properties (remnant polarization, $P_r$, and coercive field, $E_c$). The $P_r$ value was over four times higher than those of the screen-printed films. These films integrated on silicon wafer substrate could give a potential of applications in micro-sensors and -actuators.