• Title/Summary/Keyword: Piezoelectric film sensor

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Pyroelectric Properties on the Orientation of SBN Thin Film (SBN 박막의 배향도에 따른 초전특성 변화)

  • Lee, Chae-Jong;Lee, Hee-Young;Kim, Jeong-Joo;Cho, Sang-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.366-367
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    • 2006
  • Different orientated SBN thin films were deposited by Ion Beam Sputtering, and electric properties were measured on each orientation. Ferroelectric $Sr_xBa_{1-x}Nb_2O_6$(SBN) has excellent electro-optic, photo-refractive, piezoelectric, pyroelectric properties. SBN thin film has been deposited by various method, of sol-gel, PLD, CVD, sputtering, etc.. To avoid lead pollution of Pb-system perovskite ferroelectric materials. SBN thin films were fabricated for pyroelectric IR sensor. Using the ceramic target of the same composition and Pt(100)/$TiO_2/SiO-2$/Si(100) substrate, crystallization and orientation behavior as well as electric properties of the films were examined. Seed layer and thin films thickness was controlled to observe the effect on preferred orientation. We measured I-V, C-V, P-E hysteresis to characterize electric-properties on each orientations.

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Piezoelectric Thin Film of Electrical Sensor Filter for Security System (기계경비용 전기센서필터의 압전박막 특성)

  • Lee, Dong-Yoon
    • Proceedings of the Korea Contents Association Conference
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    • 2008.05a
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    • pp.595-597
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    • 2008
  • Zinc Oxide(ZnO) thin films on Si (100) substrate were deposited by RF magnetron sputter with changing sputtering conditions such as argon/oxygen gas ratios, RF power, and substrate temperature, chamber pressure and target-substrate distance. To analyze a crystallographic properties of the films, ${\Theta}/2{\Theta}$ mode X-ray diffraction, SEM analyses. C-axis preferred orientation highly depended on RF power.

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Basic Studies for the Development of the $NO_2$ Gas Sensor Using Functional Organic Ultrathin Film (기능성 유기 초박막을 이용한 $NO_2$ 가스센서 개발을 위한 기초 연구)

  • Sohn, B.C.;Rim, B.O.;Kim, Y.I.;Sohn, T.W.;Shin, D.M.;Ju, J.B.;Chung, G.Y.;Kim, Y.K.;Kang, W.H.;Lee, B.H.
    • Journal of the Korean Applied Science and Technology
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    • v.12 no.1
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    • pp.125-131
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    • 1995
  • Ultra thin films of Tetra-3-hexadecylsulphamoylcopperphthalocyanine(HDSM-CuPc) were formed on various substrates by Langmuir-Blodgett method, where HDSM-CuPc was synthesized by attaching long-chain alkylamine(hexa-decylamine) to CuPc. The reaction product was identified with FT-IR, UV-visible absorption spectroscopies, elemental analysis and thin layer chromatography. The formation of Ultrathin Langmuir-Blodgett(LB) films of HDSM-CuPc was confirmed by FT-IR and UV-visible spectroscopies. A quartz piezoelectric crystal coated with LB films of HDSM-CuPc was examined as a gas sensor for $N0_2$ gas. HDSM-CuPc LB films were transferred to a quartz crystal microbalance(QCM) in the form of Z-type multilayers. Response characteristics of film-coated QCM to $NO_2$ gas concentrations over a range of $100{\sim}600ppm$ have been tested with a thickness of $5{\sim}20$ layers of HDSM-CuPc. Changes in frequency by adsorption of $NO_2$ were increased With the number of LB layers and $NO_2$ concentration, but the response time was slow.

Fabrication and Characteristics of FET-type Pressure Sensor Using Piezoelectric PZT Thin Film (압전체 PZT 박막을 이용한 FET형 압력 센서의 제작과 그 특성)

  • Kim, Young-Jin;Lee, Young-Chul;Kwon, Dae-Hyuk;Sohn, Byung-Ki
    • Journal of Sensor Science and Technology
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    • v.10 no.3
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    • pp.173-179
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    • 2001
  • The currently used semiconductor pressure sensors are piezoresistive and capacitive type. Especially, semiconductor micro pressure sensors have a great deal of attention because of their small size. However, its fabrication processes are difficult, so that its yield is poor. For the purpose of resolving the drawbacks of the existing silicon pressure sensors, we demonstrate a new type of pressure sensor using PSFET(pressure sensitive field effect transistor) and investigate its operational characteristics. We used PZT(Pb(Zr,Ti)$O_3$) as a pressure sensing material. PZT thin films were deposited on a gate oxide of MOSFET by an rf-magnetron sputtering method. To abtain the stable phase, perovskite structure, furnace annealing technique have been employed in PbO ambient. The sensitivity of the PSFET was 0.38 mV/mmHg.

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Fabrication and Characterization of Multi-layered Thick Films by Room Temperature Powder Spray in Vacuum Process (상온 진공 분말 분사 공정을 이용한 다층 박막 소재의 제조 및 전기적 특성)

  • Ryu, Jung-Ho;Ahn, Cheol-Woo;Kim, Jong-Woo;Choi, Jong-Jin;Yoon, Woon-Ha;Hahn, Byung-Dong;Choi, Joon-Hwan;Park, Dong-Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.8
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    • pp.584-592
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    • 2012
  • Room temperature powder spray in vacuum process, so called Aerosol deposition (AD) is a room temperature (RT) process to fabricate thick and dense ceramic films, based on collision of solid ceramic particles. This technique can provide crack-free dense thin and thick films with thicknesses ranging from sub micrometer to several hundred micrometers with very fast deposition rates at RT. In addition, this technique is using solid particles to form the ceramic films at RT, thus there is few limitation of the substrate and easy to control the compositions of the films. In this article, we review the progress made in synthesis of piezoelectric thin/thick films, multi-layer structures, NTC thermistor thin/thick films, oxide electrode thin films for actuators or sensor applications by AD at Korea Institute of Materials Science (KIMS) during the last 4 years.

Fabrication of Two-Dimensional Array Hydrophones and Application to Ultrasonic Field Measurement (2차원 배열 수중청음기의 제작과 초음파 음장 측정에의 응용)

  • Ha, Kang-Lyeol;Kim, Moo-Joon;Kang, Gab-Joong;Hyun, Byung-Gook;Chae, Min-Ku;Imano, Gazuhiko
    • Journal of Sensor Science and Technology
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    • v.10 no.5
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    • pp.320-328
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    • 2001
  • Two-dimensional array hydrophones with $8{\times}8$ elements were designed and fabricated using the PVDF(Polyvinylidene fluoride) piezoelectric film, and the method and system for ultrasonic field measurement in several MHz $\sim$ tens of MHz band using the hydrophones was established. The characteristics of frequency response relating to the backing materials were analyzed with the Mason equivalent circuit for design, and the accuracy of ultrasonic field measurement relating to the sizes and kerfs of piezoelectric elements was discussed. Good results of the measurement of ultrasonic field formed by a circular plane transducer of 2.25MHz in water were obtained by the system with the array hydrophones.

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필름 스피커 적용을 위한 PZT/polymer 복합체의 후막 제조 및 압전 특성 평가

  • Son, Yong-Ho;Eo, Sun-Cheol;Kim, Seong-Jin;Gwon, Seong-Yeol;Gwon, Sun-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.346-346
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    • 2007
  • 압전세라믹 재료는 현재 압전 변압기, actuator, transducer, sensor, speaker 등에 광범위하게 이용이 되고 있다. 이 중에서 압전세라믹 소결체를 이용한 스피커의 제조는 가공이 까다롭고, 대형의 크기로 제작 시 소자가 깨지는 등의 많은 제약을 받고 있으며, 저음 특성이 떨어져 응용 범위가 한정되어 있다. 따라서 최근에는 이러한 단점을 극복하기 위하여 세라믹/고분자 복합체를 이용한 필름 스피커를 제작하고자 시도하고 있다. 이러한 세라믹/고분자 0-3형 압전 복합체를 이용할 경우, 제품의 경량화를 실현할 수 있고, 크기나 환경의 영향을 거의 받지 않으므로, 고기능성 스피커로의 응용에 적합할 것으로 보인다. 따라서 본 연구에서는 PZT계의 세라믹와 PVDF, PVDF-TrFE, Polyester, acrylic resin 등의 여러 고분자 물질과의 복합체를 제조하여 압전특성을 평가하였다. 본 실험은 먼저 $(Pb_{1-a-b}Ba_aCd_b)(Zr_xTi_{1-x})_{1-c-d}(Ni_{1/3}Nb_{2/3})_c(Zn_{1/3}Nb_{2/3})_dO_3$ (이하 PZT라 표기)의 최적화 조성을 선택하여, $1050^{\circ}C$에서 소결된 분말을 48시간 ball milling방법 로 약 $1{\mu}m$ 크기로 분쇄하였다. 고분자 물질들은 알맞은 용제들을 선택하여 녹였다. 그 다음 소결된 PZT분말과 고분자를 50:50, 60:40, 65:35, 70:30등의 무게 분율로 혼합하고, 분산제, 소포제 등을 첨가하여 3단 roll mill을 이용하여 충분히 분산시켜 페이스트 (Paste)를 제조하였다. 제조된 페이스트를 ITO가 코팅된 PET필름 위에 스크린 프린팅 법을 사용하여 인쇄하여 $120^{\circ}C$에서 5분간 건조하였다. 코팅된 복합체의 두께는 약 $80{\mu}m$ 정도로 측정되었다. Ag 페이스트를 이용한 상부 전극 형성에도 스크린 프린팅 법을 적용하였다. 이를 $120^{\circ}C$에서 4 kV/mm의 DC 전계로 분극 공정을 수행한 후 전기적 특성을 평가하였다. 유전특성을 조사하기 위해서 LCR meter (EDC-1620)를 사용하였고, 시편의 결정구조는 XRD (Rigaku; D/MAX-2500H)을 통해 분석하였으며, 전자현미경(SEM)을 이용하여 미세구조를 분석하였다. 압전 전하상수$(d_{33})$ 값은 APC 8000 모델을 이용하여 측정하였다. PZT의 혼합비가 증가할수록 비유전율 및 압전 전하 상수 등의 전기적 특성이 증가되었다. 또 여러 고분자 물질 중에서 PVDF-TrFE 수지가 가장 우수한 특성을 보였다. 이는 PVDF-TrFE 수지가 압전성을 나타내기 때문인 것으로 판단되었다.

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