• Advances in nano research
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• 제12권6호
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• pp.583-592
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• 2022

In this paper, a pulsed picosecond laser dressing method for bronze-bonded diamond wheel is studied systematically and comprehensively. The picosecond laser pulse ablation experiment is carried out, and the ablation thresholds of bronze-bonded and diamond abrasive particle are measured respectively. The results indicate that the single-pulse ablation thresholds of bronze-bonded are 0.89J/cm², 0.24J/cm² during strong/weak ablation stages. And the multi-pulse ablation thresholds of diamond abrasive particle are 1.69J/cm², 0.49J/cm² during strong/weak ablation stages. Obviously, diamond grains have less thermal damage during the process of gentle ablation. The diamond grains of the grinding wheel surface are graphitized during laser dressing. The bronze-bonded is relatively smooth and organizational stability, and the diamond grits have suitable prominent height, which are beneficial to maintain the good grinding performance of dressed bronze-bonded diamond grinding wheels.

• Journal of the Optical Society of Korea
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• 제17권2호
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• pp.117-129
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• 2013

We briefly review the recent progress in passively mode-locked fiber lasers (PMLFLs) based on semiconductor saturable absorber mirrors (SESAMs) and discuss the detailed characterization of a SESAM-based, passively mode-locked erbium-doped fiber (EDF) laser operating in the 1.5-${\mu}m$ spectral range for various configurations. A simple and compact design of the laser cavity enables the PMLFL to generate either femtosecond or wavelength-tunable picosecond pulses with high stability as the intra-cavity filtering method is altered. All the cavities investigated in our experiments present self-starting, continuous-wave mode-locking with no Q-switching instabilities. The excellent stability of the source eventually enables the wavelength-tunable PMLFL to be used as a master oscillator for a power-amplifier source based on a large-core EDF, generating picosecond pulses of >10-kW peak power and >100-nJ pulse energy.

• 한국광학회:학술대회논문집
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• 한국광학회 1990년도 제5회 파동 및 레이저 학술발표회 5th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.172-176
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• 1990

A high resolution picosecond absorption kinetic spectrometer utilizing dye emission and a streak camera is presented and compared with other methods of picosecond transient absorption measurements. Typical transient absorption and bleach recovery kinetics measured with this spectrometer are shown. Single wavelength transient absorption or ground state bleach recovery kinetics are determined on the basis of a single laser shot, so that the samples are relatively free frm decomposition by irradiation. Excellent kinetics may be obtained from the near UV to the near IR and are not subject to interference from luminescence of samples. The sensitivity of this spectrometer is very high and it is reasonably easy and convenient to set up and use.

• 한국광학회지
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• 제4권3호
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• pp.347-353
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• 1993

펌프-촉침 방법을 이용한 피코초 순간 흡광 속도분광기를 제작하고 피코초 순간 흡광 분광을 측정하는 다른 방법들과 비교하였다. 제작된 피코초 순간 흡광 속도분광기는 모드 록킹된 cw 색소 레이저에서 발생된 펌프 펄스와 촉침 펄스 사이의 지연시간 변화에 따른 시료의 순간 투과도를 잡금 증폭기를 사용하여 측정하였다. 이 속도분광기를 사용하여 측정된 순간 흡광 및 바닥 상태의 표백 재생 속도 곡선들을 보여주었다. 단일 파장에서 발광 또는 비발광 계의 순간 흡광 혹은 바닥 상태의 표백 재생의 아주 좋은 속도 곡선을 얻을 수 있었다.

• 한국레이저가공학회:학술대회논문집
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• 한국레이저가공학회 2006년도 춘계학술발표대회 논문집
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• pp.97-100
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• 2006

Picosecond (ps) laser micro-machining has emerged as an attractive method of fabricating high-precision microstructures, especially in metals. In this paper, a metallic mold for diffraction gratings is fabricated with a mode-locked 12 ps $Nd:YVO_4$ laser. Laser pulses with a wavelength of 355nm are irradiated on the surface of NOK 80, a mold material, to generate line patterns. In order to minimize the line width, laser power is set just above the ablation threshold of NOK 80. Results show that the spectrum from the fabricated mold is good enough for some industrial application.

• Current Optics and Photonics
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• 제5권2호
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• pp.186-190
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• 2021

In this study, a compact, picosecond, mid-infrared 3.8 ㎛ MgO:PPLN optical parametric oscillator (OPO) laser output with high peak power is realized using a master oscillator power amplifier (MOPA) 1 ㎛ solid-state laser seeded by a picosecond fiber laser as the pump source. The pump source was a 50 MHz and 10 ps fiber seed source. After AOM pulse selection and two-stage solid-state amplification, a 1,064 nm laser output with a repetition frequency of 1-2 MHz, pulse width of 9.5 ps, and a maximum average power of 20 W was achieved. Furthermore, a compact short cavity with a unsynchronized pump is adopted through the design of an OPO cavity structure. When the injection pump power was 15 W and the repetition frequency was 1 MHz, the average output power of idler light was 1.19 W, and the corresponding peak power was 119 kW. The optical conversion efficiency was 7.93%. When the repetition frequency was increased to 2 MHz, the average output power of idler light was 1.63 W, the corresponding peak power was 81.5 kW, and the optical conversion efficiency was 10.87%. At the same time, the output wavelength was measured at 3,806 nm, and the beam quality was MX2 = 3.21 and MY2 = 3.34.

• 대한기계학회논문집B
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• 제26권10호
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• pp.1427-1435
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• 2002

The main aim of the present article is numerically to investigate the micro-scale heat transfer phenomena in a silicon microstructure irradiated by picosecond-to-femtosecond ultra-short laser pulses. Carrier-lattice non-equilibrium phenomena are simulated with a self-consistent numerical model based on Boltzmann transport theory to obtain the spatial and temporal evolutions of the lattice temperature, the carrier number density and its temperature. Especially, an equilibration time, after which carrier and lattice are in equilibrium, is newly introduced to quantify the time duration of non-equilibrium state. Significant increase in carrier temperature is observed for a few picosecond pulse laser, while the lattice temperature rise is relatively small with decreasing laser pulse width. It is also found that the laser fluence significantly affects the N 3 decaying rate of Auger recombination, the carrier temperature exhibits two peaks as a function of time due to Auger heating as well as direct laser heating of the carriers, and finally both laser fluence and pulse width play an important role in controlling the duration time of non-equilibrium between carrier and lattice.

• 한국정밀공학회지
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• 제27권10호
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• pp.40-44
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• 2010

Laser drilling is an enabling technology for Through Silicon Via (TSV) interconnect applications. Recent advances in picoseconds laser drilling of blind, micron sized vias in silicon is presented here highlighting some of the attractive features of this approach such as excellent sidewall quality. In this study, we dealt with comparison of heat affection around drilled hole between a picosecond laser and a nanosecond laser process under the UV wavelength. Points which special attention should be paid are that picosecond laser process lowered experimentally recast layer, surface debris and micro-crack around hole in comparison with nanosecond laser process. These finding suggests that laser TSV process has possibility to drill under $10{\mu}m$ via. Finally, the laser drilling platform was constructed successfully.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.487-488
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• 2006

Picosecond (ps) laser micro-machining has emerged as an attractive method of fabricating high-precision microstructures, especially in metals. In this paper, a metallic mold for diffraction gratings is fabricated with a mode-locked 12 Ps $Nd:YVO_4$ laser. Laser pulses with a wavelength of 355nm are irradiated on the surface of NOK 80, a mold material, to generate line patterns. In order to minimize the line width, laser power is set just above the ablation threshold of NOK 80. Results show that the spectrum from the fabricated mold is good enough for some industrial application.

• 한국레이저가공학회지
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• 제14권1호
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• pp.14-18
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• 2011

Semiconductor industry demands decrease in line/space dimensions of IC substrates. Particularly for IC substrates for CPU, line/space dimensions below $10{\mu}m/10{\mu}m$ are expected to be used in production since 2014. Conventional production technologies (SAP, etc.) based on photolithography are widely agreed to be reaching capability limits. To address this limitation, the embedded circuit fabrication technology using laser ablation has been recently developed. In this paper, we used a nanosecond UV laser and a picosecond UV laser to fabricate embedded circuit patterns into a buildup film with $SiO_2$ powders for IC substrate. We conducted SEM and EDS analysis to investigate surface quality of the embedded circuit patterns. Experimental results showed that due to higher recoil pressure, picosecond UV laser ablation of the buildup film generated a better surface roughness.