• 제목/요약/키워드: Physical Vapor Deposition

검색결과 326건 처리시간 0.033초

Annealed effect on the Optical and Electrical characteristic of a-IGZO thin films transistor.

  • 김종우;최원국;주병권;이전국
    • 한국재료학회:학술대회논문집
    • /
    • 한국재료학회 2010년도 춘계학술발표대회
    • /
    • pp.53.2-53.2
    • /
    • 2010
  • 지금까지 능동 구동 디스플레이의 TFT backplane에 사용하고 있는 채널 물질로는 수소화된 비정질 실리콘(a-Si:H)과 저온 폴리실리콘(low temperature poly-Si)이 대표적이다. 수소화된 비정질 실리콘은 TFT-LCD 제조에 주로 사용되는 물질로 제조 공정이 비교적 간단하고 안정적이며, 생산 비용이 낮고, 소자 간 특성이 균일하여 대면적 디스플레이 제조에 유리하다. 그러나 a-Si:H TFT의 이동도(mobility)가 1 cm2/Vs이하로 낮아 Full HD 이상의 대화면, 고해상도, 고속 동작을 요구하는 UD(ultra definition)급 디스플레이를 개발하는데 있어 한계 상황에 다다르고 있다. 또한 광 누설 전류(photo leakage current)의 발생을 억제하기 위해서 화소의 개구율(aperture ratio)을 감소시켜야하므로 패널의 투과율이 저하되고, 게이트 전극에 지속적으로 바이어스를 인가 시 TFT의 문턱전압(threshold voltage)이 열화되는 문제점을 가지고 있다. 문제점을 극복하기 위한 대안으로 근래 투명 산화물 반도체(transparent oxide semiconductor)가 많은 관심을 얻고 있다. 투명 산화물 반도체는 3 eV 이상의 높은 밴드갭(band-gap)을 가지고 있어 광 흡수도가 낮아 투명하고, 광 누설 전류의 영향이 작아 화소 설계시 유리하다. 최근 다양한 조성의 산화물 반도체들이 TFT 채널 층으로의 적용을 목적으로 활발하게 연구되고 있으며 ZnO, SnO2, In2O3, IGO(indium-gallium oxide), a-ZTO(amorphous zinc-tin-oxide), a-IZO (amorphous indium-zinc oxide), a-IGZO(amorphous indium-galliumzinc oxide) 등이 그 예이다. 이들은 상온 또는 $200^{\circ}C$ 이하의 낮은 온도에서 PLD(pulsed laser deposition)나 스퍼터링(sputtering)과 같은 물리적 기상 증착법(physical vapor deposition)으로 손쉽게 증착이 가능하다. 특히 이중에서도 a-IGZO는 비정질임에도 불구하고 이동도가 $10\;cm2/V{\cdot}s$ 정도로 a-Si:H에 비해 월등히 높은 이동도를 나타낸다. 이와 같이 a-IGZO는 비정질이 가지는 균일한 특성과 양호한 이동도로 인하여 대화면, 고속, 고화질의 평판 디스플레이용 TFT 제작에 적합하고, 뿐만 아니라 공정 온도가 낮은 장점으로 인해 플렉시블 디스플레이(flexible display)의 backplane 소재로서도 연구되고 있다. 본 실험에서는 rf sputtering을 이용하여 증착한 a-IGZO 박막에 대하여 열처리 조건 변화에 따른 a-IGZO 박막들의 광학적, 전기적 특성변화를 살펴보았고, 이와 더불어 a-IGZO 박막을 TFT에 적용하여 소자의 특성을 분석함으로써, 열처리에 따른 Transfer Curve에서의 우리가 요구하는 Threshold Voltage(Vth)의 변화를 관찰하였다.

  • PDF

중간층 증착에 의한 CrAlN 코팅의 기계적 물성 및 내열성 향상에 관한 연구 (Enhanced Mechanical Properties and Thermal Stability of CrAlN Coatings by Interlayer Deposition)

  • 김회근;라정현;송면규;이상율
    • 한국표면공학회:학술대회논문집
    • /
    • 한국표면공학회 2016년도 추계학술대회 논문집
    • /
    • pp.100-100
    • /
    • 2016
  • 물리기상증착방법 (Physical vapor deposition)에 의하여 합성된 천이금속 질화물 박막은 경도, 내마모성 등 절삭공구의 성능을 향상시키며, Ti-Al-N, Ti-Zr-N, Zr-Al-N, Cr-Si-N 등의 3원계 경질 박막에 대한 연구가 지속적으로 이루어지고 있다. 이중에서도 CrAlN 코팅은 높은 경도, 낮은 표면 조도 등의 우수한 기계적 특성 이외에 고온에서 안정한 합금상 형성으로 인하여 우수한 내열성을 보유하여 공구 코팅으로의 적용 가능성이 크다. 그러나 최근 공구사용 환경의 가혹화로 인하여 코팅의 내마모성 및 내열성 등의 물성 향상을 통한 공구의 수명 향상이 필요시 되고 있으며, 코팅에 적합한 중간층을 합성함으로써 공구 코팅으로의 적용 가능성을 높이는 연구들이 진행되고 있다. 본 연구에서는 CrAlN 코팅의 물성을 향상시키기 위해 CrAlN 코팅과 WC-Co 6wt.% 모재 사이에 CrN, CrZrN, CrN/CrZrSiN 등의 다양한 중간층을 합성하였으며, 중간층을 포함한 모든 코팅의 두께는 $3{\mu}m$ 로 제어하였다. 합성된 코팅의 미세조직, 경도 및 탄성계수, 내모성을 분석하기 위해 field emission scanning electron microscopy(FE-SEM), nano-indentation, ball-on-disk 마모시험기 및 ${\alpha}-step$을 사용하였다. 코팅의 내열성을 확인하기 위해 코팅을 furnace에 넣어 공기중에서 500, 600, 700, 800, 900, $1,000^{\circ}C$로 30분 동안 annealing 한 후에 nano-indentation을 사용하여 경도를 측정하였다. CrAlN 코팅을 나노 인덴테이션으로 분석한 결과, 모든 코팅의 경도(35.5-36.2 GPa)와 탄성계수(424.3-429.2 GPa)는 중간층의 종류에 상관없이 비슷한 값을 보인 것으로 확인됐다. 그러나, 코팅의 마찰계수는 중간층의 종류에 따라 다른 값을 보였으며, CrN/CrZrSiN 중간층을 증착한 CrAlN 코팅의 마찰계수는 0.34로 CrZrN 중간층을 증착한 CrAlN 코팅의 마찰계수(0.41)에 비해 낮은 값을 보였다. 또한, 코팅의 마모율 및 마모폭도 비슷한 경향을 보인 것으로 보아, CrN/CrZrSiN 중간층을 합성한 CrAlN 코팅의 내마모성이 상대적으로 우수한 것으로 판단된다. 이것은 중간층의 H/E ratio가 코팅의 내마모성에 미치는 영향에 의한 결과로 사료된다. H/E ratio는 파단시의 최대 탄성 변형율로써, 모재/중간층/코팅의 H/E ratio 구배에 따라 코팅 내의 응력의 완화 정도가 변하게 된다. WC 모재 (H/E=0.040)와 CrAlN 코팅(H/E=0.089) 사이에서 CrN, CrZrSiN 중간층의 H/E ratio 는 각각 0.076, 0.083 으로 모재/중간층/코팅의 H/E ratio 구배가 점차 증가함을 확인 할 수 있었고, 일정 응력이 지속적으로 가해지면서 진행되는 마모시험중에 CrN과 CrZrSiN 중간층이 WC와 CrAlN 코팅 사이에서 코팅 내부의 응력구배를 완화시키는 역할을 함으로써 CrAlN 코팅의 내마모성이 향상된 것으로 판단된다. 모든 코팅을 열처리 후 경도 분석결과, CrN/CrZrSiN 중간층을 증착한 CrAlN 코팅은 $1,000^{\circ}C$까지 약 28GPa의 높은 경도를 유지한 것으로 확인 되었고, 이는 CrZrSiN 중간층 내에 존재하는 $SiN_x$ 비정질상의 우수한 내산화성에 의한 결과로 판단된다.

  • PDF

용액 공정을 통해 제조된 LaAlO3/SrTiO3 계면에서의 이차원 전자 가스의 전기적 특성 (Electrical Properties of Two-dimensional Electron Gas at the Interface of LaAlO3/SrTiO3 by a Solution-based Process)

  • 유경희;유상혁;조현지;안현수;정종훈;이형우;이정우
    • 마이크로전자및패키징학회지
    • /
    • 제31권1호
    • /
    • pp.43-48
    • /
    • 2024
  • SrTiO3 (STO) 기판 위에 성장된 LaAlO3 (LAO) 계면에서의 이차원 전자 가스 (2DEG)의 발견은 복합 산화물 이종 구조를 기반으로 한 혁신적인 전자소자 연구의 장을 제공함으로써 많은 관심을 받아왔다. 하지만 LAO 박막을 형성하기 위하여, 일반적으로 물리기상증착법(PVD)을 기반으로 하는 펄스 레이저 증착 (PLD) 등의 기법이 주로 사용되어 왔으나, 공정 비용이 많이 들며 LAO 내 La와 Al의 정밀한 조성 제어가 어려운 단점이 있다. 본 연구에서는 PVD에 비해 경제적인 대안인 용액 기반 공정을 사용하여 LAO 박막을 제조하였고, 그 전기적 특성을 평가하였다. LAO 전구체 용액의 농도를 다르게 하여 LAO의 두께를 2에서 65 nm까지 변화시켰으며, 각 두께에 따른 면저항 및 캐리어 농도를 도출하였다. 진공 열처리 후 형성된 전도성 채널의 면저항 값은 0.015에서 0.020 Ω·sq-1 범위로 나타났으며, 이러한 결과는 기존 문헌과 비교하였을 때 LAO와 STO 사이의 계면에서의 전자 이동뿐만 아니라 계면으로부터 떨어져 있는 STO bulk 영역으로의 전자 전도를 시사한다. 본 연구 결과는 용액 기반 공정을 통한 2DEG 형성 및 제어를 구현한 것으로, 공정 비용을 줄이고 전자 소자 제조에서 보다 광범위한 응용 가능성을 제시한다는 점에 그 의의가 있다.

생불활성 질화물 이온도금된 티타늄 임프란트의 표면특성 및 생체적합성 (Surface characteristics and biocompatibility of bioinert nitrides ion plated titanium implant)

  • 장갑성;김흥중;박주철;김병옥;한경윤
    • Journal of Periodontal and Implant Science
    • /
    • 제29권1호
    • /
    • pp.209-231
    • /
    • 1999
  • Even though titanium(Ti) and its alloys are the most used dental implant materials, there are some problems that Ti wears easily and interferes normal osteogenesis due to the metal ions. Ti coated with bioactive ceramics such as hydroxyapatite has also such problems as the exfoliation or resorption of the coated layer, Recent studies on implant materials have been proceeding to improve physical properties of the implant substrate and biocompatibility of the implant surfaces. The purpose of the present study was to examine the physical property and bone tissue compatibility of bioinert nitrides ion plated Ti, Button type specimens(14mm in diameter, 2.32rrun in height) for the abrasion test and cytotoxicity test and thread type implants(3.75mm in diameter, 6mm in length) for the animal experiments were made from Ti(grade 2) and 316LVM stainless steel. Ti specimens were ion plated with TiN, ZrN by the low temperature arc vapor deposition, and the depth profile of the TiN/Ti, ZrN/Ti ion plated surface was examined by Auger Electron Spectroscopy. Three kind of button type specimens .of TiN/Ti, ZrN/Ti and Ti were used for abrasion test, and HEPAlClC7 cells and CCD cells were cultivated for 4 days with the specimens for cytotoxicity test. Thread type implants of TiN/Ti, ZrN/Ti, Ti, 316LVM were implanted on the femur of 6 adult dogs weighing 10kg-13kg. Two dogs were sacrified for histological examination after 45 days and 90 days, and four dogs were sacrified for the removal torque test of the implant') after 90 days. The removal torque force was measured by Autograph (Shimadzu Co., AGS-1000D series, Japan). Abrasion resistance of TiN/Ti was the highest, and that of ZrN/Ti and Ti were followed. The bioinert nitride ion plated Ti had much better abrasion resistance, compared with Ti, In the cytotoxicity test, the number of both cells were increased in all specimens, and there were no significant difference in cytotoxic reaction among all groups (p>0.1), In histological examination, 316LVM showed the soft tissue engagement in interface between the implant and bone, but the other materials after 45 days noted immature new bone formation in the medullary portion along the implant surface, and those after 90 days showed implant support by new bone formation in both the cortical and the medullary portion, The removal torque force of Tilv/Ti showed significantly higher than that of Ti(p(O,05). The difference in removal torque force between TiN/Ti and ZrN/Ti was not significant(p>0.05), and that of 316LVM was lowest among all groups(p<0.05). These results suggest that bioinert nitrides ion plated Ti can resolve the existing problems of Ti and bioactive ceramics, and it may be clinically applicable to human.

  • PDF

A bilayer diffusion barrier of atomic layer deposited (ALD)-Ru/ALD-TaCN for direct plating of Cu

  • Kim, Soo-Hyun;Yim, Sung-Soo;Lee, Do-Joong;Kim, Ki-Su;Kim, Hyun-Mi;Kim, Ki-Bum;Sohn, Hyun-Chul
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
    • /
    • pp.239-240
    • /
    • 2008
  • As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

  • PDF

표면처리에 따른 Hastelloy X 합금의 고온물성 (High temperature properties of surface-modified Hastelloy X alloy)

  • 조현;이병우
    • 한국결정성장학회지
    • /
    • 제22권4호
    • /
    • pp.183-189
    • /
    • 2012
  • 고온 열수송용 재료로 이용되는 Hastelloy X의 표면처리에 따른 고온물성 개선에 대한 연구를 수행하였다. Hastelloy X 기판 상에 각각 PVD법인 Arc discharge 및 Sputtering을 이용하여 TiAlN 및 $Al_2O_3$ 박막을 표면 코팅(overlay coating) 하였고, 분위기 분말을 이용하여 Al을 금속표면을 통해 확산시키는 방법인 Pack cementation법을 이용한 Al 확산코팅(diffusion coating: aluminiding)법을 이용한 표면처리를 수행하였다. 이들 표면처리가 Ni-Cr계 합금의 고온열처리에서 생성되는 두꺼운 불균질 산화물($Cr_2O_3$)형성 억제에 미치는 효과와 조성 및 표면미세구조가 물성에 미치는 영향에 대해 알아보기 위해, 표면처리 된 Hastelloy X 샘플들을 공기 및 헬륨가스 분위기에서 $1000^{\circ}C$로 열처리 하였으며, 열처리된 전후 시편들에 대해 상형성, 미세구조 및 고온 물성 변화를 측정하였다. 이러한 실험결과를 통하여 표면코팅법에 의한 TiAlN 및 $Al_2O_3$ 박막에 비해 Al 확산코팅한 경우 두꺼운 불균질 산화물($Cr_2O_3$)형성이 억제되어 보다 균질한 미세구조와 높은 내마모성 등 높은 고온 안정성을 보여주는 것을 확인할 수 있었다.

Simultaneous Transfer and Patterning of CVD-Grown Graphene with No Polymeric Residues by Using a Metal Etch Mask

  • 장미;정진혁;;이내응
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
    • /
    • pp.642-642
    • /
    • 2013
  • Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.

  • PDF

A STUDY ON MECHANICAL PROPERTIES OF TiN, ZrN AND WC COATED FILM ON THE TITANIUM ALLOY SURFACE

  • Oh, Dong-Joon;Kim, Hee-Jung;Chung, Chae-Heon
    • 대한치과보철학회지
    • /
    • 제44권6호
    • /
    • pp.740-750
    • /
    • 2006
  • Statement of problems. In an attempt to reduce screw loosening, dry lubricant coatings such as pure gold or tefron have been applied to the abutment screw. However, under repeated tightening and loosening procedures, low wear resistance and adhesion strength of coating material produced free particles on the surface of abutment screw and increased frictional resistance resulting in screw tightening problems. Purpose. The aim of this study was to compare friction coefficient, adhesion strength, vickers hardness and evaluate coating surface of titanium alloy specimens coated with TiN(titanium nitride), ZrN(zirconium nitride) and WC(tungsten carbide). Material and method. Titanium alloy(Ti-6Al-4V) discs of 12mm in diameter and 1mm in thickness divided into 4 groups. TiN, ZrN and WC was coated for the specimens of 3 groups respectively, and those of 1 group were not coated. Each group was made up of 4 specimens. In this study, sputtering method was used among the PVD(Physical Vapor Deposition) techniques available for TiN, ZrN and WC coatings. Friction coefficient, adhesion strength, vickers hardness and coating surface of 4 groups were measured. Results. 1. For all three coating conditions, friction coefficient was significantly decreased. Especially, ZrN coated surface showed the lowest value. $TiN(0.39{\pm}0.02)$, $ZrN(0.24{\pm}0.01)$, $WC(0.31{\pm}0.03)$. 2. TiN coating showed the highest adhesion strength, however ZrN coating had the lowest value. $TiN(25.3N{\pm}1.6)$, $ZrN(14.8N{\pm}0.6)$, $ WC(18.4N{\pm}0.7)$. 3. Vickers hardness of all three coatings was remarkably increased as compared with that of none coated specimen. TiN coating had the highest Vickers hardness, however WC coating showed the lowest value. $TiN(1865.2{\pm}33.8)$, $ZrN(1814.4{\pm}18.6)$, $WC(1008.5{\pm}35.9)$. 4. The ZrN or WC coated specimen showed a homogeneous and smooth surface, however the rough surface with defects was observed for TiN coating. Conclusions. When TiN, ZrN and WC coating applied to the abutment screw, frictional resistance would be reduced, as a result, the greater preload and prevention of the screw loosening could be expected.

Growth of SiC Oxidation Protective Coating Layers on graphite substrates Using Single Source Precursors

  • Kim, Myung-Chan;Heo, Cheol-Ho;Park, Jin-Hyo;Park, Seung-Jun;Han, Jeon-Geon
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 1999년도 제17회 학술발표회 논문개요집
    • /
    • pp.122-122
    • /
    • 1999
  • Graphite with its advantages of high thermal conductivity, low thermal expansion coefficient, and low elasticity, has been widely used as a structural material for high temperature. However, graphite can easily react with oxygen at even low temperature as 40$0^{\circ}C$, resulting in CO2 formation. In order to apply the graphite to high temperature structural material, therefore, it is necessary to improve its oxidation resistive property. Silicon Carbide (SiC) is a semiconductor material for high-temperature, radiation-resistant, and high power/high frequency electronic devices due to its excellent properties. Conventional chemical vapor deposited SiC films has also been widely used as a coating materials for structural applications because of its outstanding properties such as high thermal conductivity, high microhardness, good chemical resistant for oxidation. Therefore, SiC with similar thermal expansion coefficient as graphite is recently considered to be a g행 candidate material for protective coating operating at high temperature, corrosive, and high-wear environments. Due to large lattice mismatch (~50%), however, it was very difficult to grow thick SiC layer on graphite surface. In theis study, we have deposited thick SiC thin films on graphite substrates at temperature range of 700-85$0^{\circ}C$ using single molecular precursors by both thermal MOCVD and PEMOCVD methods for oxidation protection wear and tribological coating . Two organosilicon compounds such as diethylmethylsilane (EDMS), (Et)2SiH(CH3), and hexamethyldisilane (HMDS),(CH3)Si-Si(CH3)3, were utilized as single source precursors, and hydrogen and Ar were used as a bubbler and carrier gas. Polycrystalline cubic SiC protective layers in [110] direction were successfully grown on graphite substrates at temperature as low as 80$0^{\circ}C$ from HMDS by PEMOCVD. In the case of thermal MOCVD, on the other hand, only amorphous SiC layers were obtained with either HMDS or DMS at 85$0^{\circ}C$. We compared the difference of crystal quality and physical properties of the PEMOCVD was highly effective process in improving the characteristics of the a SiC protective layers grown by thermal MOCVD and PEMOCVD method and confirmed that PEMOCVD was highly effective process in improving the characteristics of the SiC layer properties compared to those grown by thermal MOCVD. The as-grown samples were characterized in situ with OES and RGA and ex situ with XRD, XPS, and SEM. The mechanical and oxidation-resistant properties have been checked. The optimum SiC film was obtained at 85$0^{\circ}C$ and RF power of 200W. The maximum deposition rate and microhardness are 2$mu extrm{m}$/h and 4,336kg/mm2 Hv, respectively. The hardness was strongly influenced with the stoichiometry of SiC protective layers.

  • PDF

표면처리된 Ni-Cr계 합금의 FLiNaK 용융염 하에서의 고온 안정성 (Thermal stability of surface modified Ni-Cr-alloys in molten FLiNaK salt)

  • 조현;방광현;이태석;이병우
    • 한국결정성장학회지
    • /
    • 제22권5호
    • /
    • pp.227-232
    • /
    • 2012
  • 차세대 원자력발전용 고온 열교환기 소재로 이용될 가능성이 높은 Ni-Cr계 고온합금인 Inconel 617과 Hastelloy X의 표면처리에 따른 FLiNaK(LiF-NaF-KF) 용융염 하에서의 고온물성에 대한 연구를 수행하였다. Inconel 617과 Hastelloy X기판 상에 각각 PVD인 arc discharge 및 sputtering법에 의해 TiAlN 및 $Al_2O_3$ 박막을 코팅 하였다. 이러한 표면처리가 이들 합금의 FLiNaK 용융염 하 고온 안정성에 미치는 영향에 대해 연구하였다. 용융염 하 Ni-Cr계 고온합금의 부식 원리를 이해하기 위해, 용융염 수송 loop에 사용 중 파단된 Inconel 파이프에 대한 미세구조 분석을 수행하였다. 표면처리 된 합금들을 $600^{\circ}C$ 용융염 내에서 열처리 하였으며, 열처리 전후 시편들에 대해 상형성, 미세구조 등 고온 물성 변화를 측정하였다. 연구결과 코팅되지 않은 경우 보다 TiAlN 및 $Al_2O_3$ 박막이 코팅된 소재에서 보다 우수한 고온 안정성을 보여주었다.