• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.367-370
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• 2000

In this study, thin films of 70/30 and 80/20 mol% P(VDF-TrFE) copolymers were fabricated by physical vapor deposition method. In order to determine the optimum deposition condition, the copolymer thin films were fabricated in the heating temperature of 260$^{\circ}C$, 280$^{\circ}C$, and 300$^{\circ}C$. The deposition rate was measured in a real time by thickness monitor. The surface image of prepared thin films was analyzed by using AFM. From the results of TG-DTA,70/30 and 80/20 mol% P(VDF-TrFE) copolymers were observed the Curie transition point below the melting point. As the results of AFM and FT-IR analysis, we determined that the optimum deposition temperature was 300$^{\circ}C$.

• Journal of the Korean Society for Heat Treatment
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• v.34 no.5
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• pp.239-244
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• 2021

Following Silicon Carbide, single crystal diamond continues to attract attention as a next-generation semiconductor substrate material. In addition to excellent physical properties, large area and productivity are very important for semiconductor substrate materials. Research on the increase in area and productivity of single crystal diamonds has been carried out using various devices such as HPHT (High Pressure High Temperature) and MPECVD (Microwave Plasma Enhanced Chemical Vapor Deposition). We hit the limits of growth rate and internal defects. However, HFCVD (Hot Filament Chemical Vapor Deposition) can be replaced due to the previous problem. In this study, HFCVD confirmed the distance between the substrate and the filament, the accompanying growth rate, the surface shape, and the Raman shift of the substrate after vapor deposition according to the vapor deposition temperature change. As a result, it was confirmed that the difference in the growth rate of the single crystal substrate due to the change in the vapor deposition temperature was gained up to 5 times, and that as the vapor deposition temperature increased, a large amount of polycrystalline diamond tended to be generated on the surface.

• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.194-200
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• 1999

In this paper studied was the piezoelectric properties of the $\beta$-PVDF organic thin films prepared by physical vapour deposition method. The molecular orientation of organic thin films was controlled by the application of an electric field and variation of substrate temperature during the evaporation process. Optimum conditions of manufacturing $\beta$-PVDF organic thin film by physical vapor deposition method is to keep at the substrate temperature of $80^{\circ}C$, at the applied electric field of 142.8 kV/cm. The voltage output coefficient increased from 1.39 to 7.04V increasing the force moment.

• Applied Science and Convergence Technology
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• v.25 no.4
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• pp.73-76
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• 2016

Multi-layer films of $SiN_x/SiO_x$/InSnO with anti-reflective effect were grown by new-concept plasma enhanced chemical vapor deposition system (PECVD) with hybrid plasma source (HPS). Anti-reflective effect of $SiN_x/SiO_x$/InSnO was investigated as a function of ratio of $SiN_x$ and $SiO_x$ thickness. Multi-layers deposited by PECVD with HPS represents the enhancement of anti-reflective effect with high transmittance, comparing to the layers by conventional radio frequency (RF) sputtering system. This change is strongly related to the optical and physical properties of each layer, such as refractive index, composition, film density, and surface roughness depending on the deposition system.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.133-133
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• 2018

증착(Vapor Deposition)이란 어떤 물질을 증기화 시켜 기판에 응축시키는 공정을 말하며 물리증착(Physical Vapor Deposition; PVD)과 화학증착(Chemical Vapor Deposition)으로 대별된다. 빗각 증착 (Oblique Angle Deposition; OAD) 기술은 입사 증기가 기판에 비스듬히 입사하도록 조절하여 코팅하는 물리증착 기술의 하나로 피막의 조직을 다양하게 제어할 수 있으며 따라서 피막의 특성 제어가 가능한 기술이다. 지금까지 빗각증착은 증기의 산란이 발생하지 않는 $10^{-5}$ 토르 이하의 고진공에서 이루어져 왔다. 본 연구에서는 플라즈마를 이용한 스퍼터링과 음극 아크 증착을 이용하여 질화티타늄(TiN; Titanium Nitride) 박막을 제조하고 그 특성을 평가하였다. TiN 박막은 내마모성 향상 및 장식용 코팅에 널리 이용되고 있다. 박막 제조시 특히 바이어스 전압을 박막 조직의 기울기를 제어하는 수단으로 이용하였고 빗각과 바이어스 전압을 이용하여 다층박막의 조직제어에 활용하였다. 박막의 미세구조와 방위, 경도를 SEM, XRD, Nano Indenter를 이용하여 측정하였고 반사율 및 박막의 조도는 Spectrophotometer와 조도 측정기를 이용하여 측정하였다. 기울어진 조직 및 V형태의 조직이 단층 및 다층의 피막에서 명확하게 관찰됨을 확인하였고 특히 마지막 층 제조시 바이어스 전압을 인가할 경우 탄성계수는 크게 변하지 않는 상황에서 경도가 증가함을 확인하였다.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.19-22
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• 2020

The thermal evaporation source is used to prepare thin films by physical vapor deposition. Materials of metals, organic materials, were tested and explained for thermal evaporation experiments. The developed effusion cell performance depends on the type of deposition material, the size of the crucible, the performance of the reflector, etc. and the proper conditions were found by producing, comparing and analyzing several sets of effusion cell to quantitatively evaluate the performance of the cell. The effusion cell for thermal evaporation source is used to prepare thin films of Ag, Cu, Mg.

• Journal of the Korean Ceramic Society
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• v.43 no.5 s.288
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• pp.299-303
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• 2006

In this paper, anode supported SOFC with columnar structured YSZ electrolyte was fabricated via Electron Beam Physical Vapor Deposition (EBPVD) method. Liquid condensation process was employed for the preparation of NiO-YSZ substrate and the high power electron beam deposition method was used for the deposition of YSZ electrolyte film. Double layered cathode with LSM-YSZ and LSM was printed on electrolyte via screen-printing method and fired at $1150^{\circ}C$ in air atmosphere for 3 h. The electrochemical performance and the long-term stability of $5{\times}5cm^2$ single cell were investigated with DC current-voltage characteristics and AC-impedance spectroscopy. According to the investigation, $5{\times}5cm^2$ sized unit cell showed the maximum power density of around $0.76W/cm^2$ at $800^{\circ}C$ and maintained the stable performance over 400 h.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.791-794
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• 2003

DLC thin films were prepared by microwave plasma-enhanced chemical vapor deposition method on silicon substrates using methane ($CH_4$) and hydrogen ($H_2$) gas mixture. The negative DC bias ($-450V{\sim}-550V$) was applied to enhance the adhesion between the film and the substrate. The films were characterized by Raman spectrometer. The surface morphology was observed by an atomic force microscope (AFM). And also, the friction coefficients were investigated by AFM in friction force microscope (FFM) mode, which were compared with the pin-on-disc (POD) measurement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.842-845
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• 2003

DLC thin films were prepared by microwave plasma-enhanced chemical vapor deposition method on silicon substrates using methane ($CH_4$) and hydrogen ($H_2$) gas mixture. The negative DC bias ($-450V{\sim}-550V$) was applied to enhance the adhesion between the film and the substrate. The films were characterized by Raman spectrometer. The surface morphology was observed by an atomic force microscope (AFM). And also, the friction coefficients were investigated by AFM in friction force microscope (FFM) mode, which were compared with the pin-on-disc (POD) measurement.

• Journal of Industrial Technology
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• v.35
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• pp.89-94
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• 2015

Graphene is a carbon-based two dimensional honeycomb lattice with monoatomic thickness and has attracted much attention due to its superior mechanical, electronic, and physical properties. Here, we present a synthesis of high quality graphene on Pt substrate using a chemical vapor deposition (CVD). We optimized synthesis condition with various parameters such as synthesis temperature, time, and cooling rate. Based on the results, we concluded that graphene synthesis is driven by mainly carbon adsorption on surface rather than precipitation of carbon which is dominant in other metal substrate. In addition, Pt substrate can be repeatedly used several times with high quality graphene.