• 제목/요약/키워드: Physical Vapor Deposition

검색결과 325건 처리시간 0.028초

기판 바이어스에 따른 탄소 나노튜브의 구조적 물성 (Structural properties of carbon nanotubes: The effect of substrate-biasing)

  • 박창균;윤성준;박진석
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.36-37
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    • 2006
  • Both negative and positive substrate bias effects on the structural properties and field-emission characteristics are investigated. carbon nanotubes (CNTs) are grown on Ni catalysts employing an inductively-coupled plasma chemical vapor deposition (ICP-CVD) method. Characterization using various techniques, such as field-emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), Auger spectroscopy (AES), and Raman spectroscopy, shows that the physical dimension as well as the crystal quality of CNTs grown can be changed and controlled by the application of substrate bias during CNT growth. It is for the first time observed that the prevailing growth mechanism of CNTs, which is either due to tip-driven growth or based-on-catalyst growth, may be influenced by substrate biasing. It is also seen that negative biasing would be more effectively role in the vertical-alignment of CNTs compared to positive biasing. However, the CNTs grown under the positively bias condition display much better electron emission capabilities than those grown under negative bias or without bias. The reasons for all the measured data regarding the structural properties of CNTs are discussed to confirm the correlation with the observed field-emissive properties.

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Probing the Atomic Structures of Synthetic Monolayer and Bilayer Hexagonal Boron Nitride Using Electron Microscopy

  • Tay, Roland Yingjie;Lin, Jinjun;Tsang, Siu Hon;McCulloch, Dougal G.;Teo, Edwin Hang Tong
    • Applied Microscopy
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    • 제46권4호
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    • pp.217-226
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    • 2016
  • Monolayer hexagonal boron nitride (h-BN) is a phenomenal two-dimensional material; most of its physical properties rival those of graphene because of their structural similarities. This intriguing material has thus spurred scientists and researchers to develop novel synthetic methods to attain scalability for enabling its practical utilization. When probing the growth behaviors and structural characteristics of h-BN, the use of appropriate characterization techniques is important. In this review, we detail the use of scanning and transmission electron microscopies to investigate the atomic configurations of monolayer and bilayer h-BN grown via chemical vapor deposition. These advanced microscopy techniques have been demonstrated to provide intimate insights to the atomic structures of h-BN, which can be interpreted directly or indirectly using known growth mechanisms and existing theoretical calculations. This review provides a collective understanding of the structural characteristics and defects of synthetic h-BN films and facilitates a better perspective toward the development of new and improved synthesis techniques.

혼합 상의 바나듐 산화물 박막 제작 및 에탄올 가스 감지 특성 연구 (Synthesis of Mixed Phase Vanadium Oxides Thin Films and Their Ethanol Gas Sensing Properties)

  • 한수덕;강종윤
    • 한국전기전자재료학회논문지
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    • 제31권1호
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    • pp.29-33
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    • 2018
  • Using a vanadium dioxide ($VO_2$) source, highly pure and amorphous vanadium oxide (VO) thin films were deposited using an e-beam evaporator at room temperature and high vacuum (<$10^{-7}$ Torr). Then, by controlling the post-annealing conditions such as $N_2:O_2$ pressure ratio and annealing time, we could easily synthesize a homogeneous $VO_2$ thin film and also mixed-phase VO thin films, including $VO_2$, $V_2O_5$, $V_3O_7$, $V_5O_9$, and $V_6O_{13}$. The crystallinity and phase of these were characterized by X-ray diffraction, and the surface morphology by FE-SEM. Moreover, the electrical properties and ethanol sensing measurements of the VO thin films were analyzed as a function of temperature. In general, mixed-phases as a self-doping effect have enhanced electrical properties, with a high carrier density and an enhanced response to ethanol. In summary, we developed an easy, scalable, and reproducible fabrication process for VO thin films that is a promising candidate for many potential electrical and optical applications.

A Study on the Properties of MgF2 Antireflection Film for Solar Cells

  • Yang, Hyeon-Hun;Park, Gye-Choon
    • Transactions on Electrical and Electronic Materials
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    • 제11권1호
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    • pp.33-36
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    • 2010
  • $MgF_2$ is a current material used for optical applications in the ultraviolet and deep ultraviolet range. Process variables for manufacturing $MgF_2$ thin film were established in order to clarify the optimum conditions for the growth of the thin film, dependant upon the process conditions, and then by changing a number of the vapor deposition conditions, substrate temperatures, and heat treatment conditions, the structural and optical characteristics were measured. Then, optimum process variables were thus derived. Nevertheless, modern applications still require improvement in the optical and structural quality of the deposited layers. In the present work, in order to understand the composition and microstructure of $MgF_2$, single layers grown on a slide glass substrate using an Electron beam Evaporator (KV-660), were analyzed and compared. The surface substrate temperature, having an effect on the quality of the thin film, was changed from $200^{\circ}C$ to $350^{\circ}C$ at intervals of $50^{\circ}C$. The heat treatment temperature, which also has an effect on the thin film, was changed from $200^{\circ}C$ to $400^{\circ}C$ at intervals of $50^{\circ}C$. The physical properties of the thin film were investigated at various fabrication conditions, such as the substrate temperature, the heat treatment temperature, and the heat treatment time, by X-ray diffraction, and field emission-scanning electron microscopy.

Real-Time Plasma Process Monitoring with Impedance Analysis and Optical Emission Spectroscopy

  • Jang, Hae-Gyu;Kim, Dae-Kyoung;Kim, Hoon-Bae;Han, Sa-Rum;Chae, Hee-Yeop
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.473-473
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    • 2010
  • Plasma is widely used in various commercial etchers and chemical vapor deposition. Unfortunately, real-time plasma process monitoring is still difficult. Some methods of plasma diagnosis is improved, however, it is possible for real-time plasma diagnosis to use non-intrusive probe only. In this research, the object is to investigate the suitability of using impedance analysis and optical emission spectroscopy (OES) for real-time plasma process monitoring. It is assumed that plasma system is a equivalent circuit. Therefore, V-I probe is used for measuring impedance, which can be a new non-intrusive probe for plasma diagnosis. From impedance data, we tried to analyse physical properties of plasma. And OES, the other method of plasma diagnosis, is a typical non-intrusive probe for analyzing chemical properties. The amount of the OES data is typically large, so this poses a difficulty in extracting relevant information. To solve this problem, principal component analysis (PCA) can be used. For fundamental information, Ar plasma and $O_2$ plasma are used in this experiment. This method can be applied to real-time endpoint and fault detections.

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EB-PVD법과 전기화학방법으로 형성된 Zn-Cr film의 구조와 부식특성 (Corrosion Behavior and Crystal Structure of Zn-Cr Coatings by EB-PVD and Electroplating)

  • 최한철
    • 한국표면공학회지
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    • 제36권6호
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    • pp.423-429
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    • 2003
  • It has been investigated corrosion resistance and crystal structure of Zn-Cr coatings fabricated by electroplating method and electron-beam physical vapor deposition method(EB-P VD). The electroplated Zn-Cr alloy consists mainly of η'-Zn phase for the lower Cr content than 7.9 wt% Cr and ${\gamma}$'-ZnCr phase for the higher Cr content. In the Zn-Cr alloy fabricated by EB-PVD the ${\gamma}$'-ZnCr phase appeared clearly at 3 wt% Cr and it became the sole phase at 50 wt%Cr. The amount of η'-Zn phase decreased obviously with increasing Cr content when it exceeded 15 wt% Cr. The electrochemical measurement of the electroplated Zn-Cr film has shown corrosion potential of about -1000 mV. The current density of active region and the amount of dissolved Zn and Cr decreased significantly with increasing Cr content. The electrochemical characteristics of Zn-Cr alloy fabricated by EB-PVD have shown that the alloy of 50 wt% Cr had the highest corrosion potential(-500 mV) and the lowest critical passive current density than that of the electroplated.

신기능성 표면처리강판 제조기술의 최근 진보 (Recent Progress in New Functional Coating Technology)

  • 김태엽
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2012년도 춘계학술발표회 논문집
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    • pp.37-37
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    • 2012
  • The coated steels, mainly with zinc by either hot-dip galvanizing or electroplating, are widely used for panels of automotive, electrical appliances and construction, whose size of world market have reached 130 million tons in 2008. Current issues for the coated steels can be integrated in terms of high functionality, low cost, environment-friend and available resource. The best solution can be provided if thin layer coating with higher quality is produced by an eco-friendly process, and PVD, physical vapor deposition, can be an alternative practice to existing coating processes. PVD technologies have been very common ones in electronic and semiconductor industries, but recognized as non-profitable processes for the coated steels due to low process speed and lack of continuous operation skills. Systematic researches from 1990s in Europe, even though discouraged by a shutdown of the first Japanese PVD coating plant in 1999, have realized several continuous PVD coating plants, and also enhanced launching of developments in steel industries. To be successful with PVD coating technologies over existing ones, productivity to meet economics should be created from a highly sophisticated process. Some PVD technologies fit for the high-speed process will be introduced together with experiences from industrial applications.

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반도체 장비상태 모니터링을 위한 SCADA 시스템 구현 (SCADA System for Semiconductor Equipment Condition Monitoring)

  • 이윤지;윤학재;박효은;홍상진
    • 반도체디스플레이기술학회지
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    • 제18권4호
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    • pp.92-95
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    • 2019
  • Automation control and the data for control of industrial equipment for the diagnosis and prediction is a key to success in the 4th industrial revolution. It increases process efficiency and productivity through data collection, realtime monitoring, and the data analysis. However, university and research environment are still suffering from logging the data in manual way, and we occasionally loss the equipment data logging due to the lack of automatic data logging system. State variable presents the current condition of the equipment operation which is closely related to process result, and it is valuable to monitor and analyze the data for the equipment health monitoring. In this paper, we demonstrate the collection of equipment state variable data via programmable logic controller (PLC) and the visualization of the collected data over the Web access supervisory control and data acquisition (SCADA). Test vehicle for the implementation of the suggested SCADA system is a relay switched physical vapor deposition system in the university environment.

PMMA 기판에 CeO2와 SiO2를 코팅하여 제작한 적외선 차단필터 (IR Cut-off Filter Made of CeO2 and SiO2 Thin Films Coated on PMMA Substrate)

  • 유연석;최상석
    • 한국광학회지
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    • 제17권5호
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    • pp.480-486
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    • 2006
  • 일반적으로 모바일 폰용 적외선 차단 필터는 유리기판위에 $300^{\circ}C$ 이상의 고온에서 코팅된다. 본 연구에서는 PMMA(Poly methyl methacrylate)기판에 저온에서 $CeO_2$$SiO_2$를 사용하여 적외선 차단 필터를 코팅하였다. 저온 코팅된 필터의 접촉각을 측정하여 박막의 부착상태를 시험하였고, 적외선 차단 필터에 대한 시험 및 설계 결과를 모바일 폰용 광학계 개선에 적용하여 보았다.

E-Beam evaporation을 이용한 전극 형성 공정이 결정질 실리콘 태양전지에 미치는 영향 분석 (Effect of Electrode Formation Process using E-beam Evaporation on Crystalline Silicon Solar Cell)

  • 최동진;박세진;신승현;이창현;배수현;강윤묵;이해석;김동환
    • Current Photovoltaic Research
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    • 제7권1호
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    • pp.15-20
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    • 2019
  • Most high-efficiency n-type silicon solar cells are based on the high quality surface passivation and ohmic contact between the emitter and the metal. Currently, various metalization methods such as screen printing using metal paste and physical vapor deposition are being used in forming electrodes of n-type silicon solar cell. In this paper, we analyzed the degradation factors induced by the front electrode formation process using e-beam evaporation of double passivation structure of p-type emitter and $Al_2O_3/SiN_x$ for high efficiency solar cell using n-type bulk silicon. In order to confirm the cause of the degradation, the passivation characteristics of each electrode region were determined through a quasi-steady-state photo-conductance (QSSPC).