• Proceedings of the KIEE Conference
• /
• 2006.10a
• /
• pp.36-37
• /
• 2006

Both negative and positive substrate bias effects on the structural properties and field-emission characteristics are investigated. carbon nanotubes (CNTs) are grown on Ni catalysts employing an inductively-coupled plasma chemical vapor deposition (ICP-CVD) method. Characterization using various techniques, such as field-emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), Auger spectroscopy (AES), and Raman spectroscopy, shows that the physical dimension as well as the crystal quality of CNTs grown can be changed and controlled by the application of substrate bias during CNT growth. It is for the first time observed that the prevailing growth mechanism of CNTs, which is either due to tip-driven growth or based-on-catalyst growth, may be influenced by substrate biasing. It is also seen that negative biasing would be more effectively role in the vertical-alignment of CNTs compared to positive biasing. However, the CNTs grown under the positively bias condition display much better electron emission capabilities than those grown under negative bias or without bias. The reasons for all the measured data regarding the structural properties of CNTs are discussed to confirm the correlation with the observed field-emissive properties.

• Applied Microscopy
• /
• v.46 no.4
• /
• pp.217-226
• /
• 2016

Monolayer hexagonal boron nitride (h-BN) is a phenomenal two-dimensional material; most of its physical properties rival those of graphene because of their structural similarities. This intriguing material has thus spurred scientists and researchers to develop novel synthetic methods to attain scalability for enabling its practical utilization. When probing the growth behaviors and structural characteristics of h-BN, the use of appropriate characterization techniques is important. In this review, we detail the use of scanning and transmission electron microscopies to investigate the atomic configurations of monolayer and bilayer h-BN grown via chemical vapor deposition. These advanced microscopy techniques have been demonstrated to provide intimate insights to the atomic structures of h-BN, which can be interpreted directly or indirectly using known growth mechanisms and existing theoretical calculations. This review provides a collective understanding of the structural characteristics and defects of synthetic h-BN films and facilitates a better perspective toward the development of new and improved synthesis techniques.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.31 no.1
• /
• pp.29-33
• /
• 2018

Using a vanadium dioxide ($VO_2$) source, highly pure and amorphous vanadium oxide (VO) thin films were deposited using an e-beam evaporator at room temperature and high vacuum (<$10^{-7}$ Torr). Then, by controlling the post-annealing conditions such as $N_2:O_2$ pressure ratio and annealing time, we could easily synthesize a homogeneous $VO_2$ thin film and also mixed-phase VO thin films, including $VO_2$, $V_2O_5$, $V_3O_7$, $V_5O_9$, and $V_6O_{13}$. The crystallinity and phase of these were characterized by X-ray diffraction, and the surface morphology by FE-SEM. Moreover, the electrical properties and ethanol sensing measurements of the VO thin films were analyzed as a function of temperature. In general, mixed-phases as a self-doping effect have enhanced electrical properties, with a high carrier density and an enhanced response to ethanol. In summary, we developed an easy, scalable, and reproducible fabrication process for VO thin films that is a promising candidate for many potential electrical and optical applications.

• Transactions on Electrical and Electronic Materials
• /
• v.11 no.1
• /
• pp.33-36
• /
• 2010

$MgF_2$ is a current material used for optical applications in the ultraviolet and deep ultraviolet range. Process variables for manufacturing $MgF_2$ thin film were established in order to clarify the optimum conditions for the growth of the thin film, dependant upon the process conditions, and then by changing a number of the vapor deposition conditions, substrate temperatures, and heat treatment conditions, the structural and optical characteristics were measured. Then, optimum process variables were thus derived. Nevertheless, modern applications still require improvement in the optical and structural quality of the deposited layers. In the present work, in order to understand the composition and microstructure of $MgF_2$, single layers grown on a slide glass substrate using an Electron beam Evaporator (KV-660), were analyzed and compared. The surface substrate temperature, having an effect on the quality of the thin film, was changed from $200^{\circ}C$ to $350^{\circ}C$ at intervals of $50^{\circ}C$. The heat treatment temperature, which also has an effect on the thin film, was changed from $200^{\circ}C$ to $400^{\circ}C$ at intervals of $50^{\circ}C$. The physical properties of the thin film were investigated at various fabrication conditions, such as the substrate temperature, the heat treatment temperature, and the heat treatment time, by X-ray diffraction, and field emission-scanning electron microscopy.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.473-473
• /
• 2010

Plasma is widely used in various commercial etchers and chemical vapor deposition. Unfortunately, real-time plasma process monitoring is still difficult. Some methods of plasma diagnosis is improved, however, it is possible for real-time plasma diagnosis to use non-intrusive probe only. In this research, the object is to investigate the suitability of using impedance analysis and optical emission spectroscopy (OES) for real-time plasma process monitoring. It is assumed that plasma system is a equivalent circuit. Therefore, V-I probe is used for measuring impedance, which can be a new non-intrusive probe for plasma diagnosis. From impedance data, we tried to analyse physical properties of plasma. And OES, the other method of plasma diagnosis, is a typical non-intrusive probe for analyzing chemical properties. The amount of the OES data is typically large, so this poses a difficulty in extracting relevant information. To solve this problem, principal component analysis (PCA) can be used. For fundamental information, Ar plasma and $O_2$ plasma are used in this experiment. This method can be applied to real-time endpoint and fault detections.

• Journal of the Korean institute of surface engineering
• /
• v.36 no.6
• /
• pp.423-429
• /
• 2003

It has been investigated corrosion resistance and crystal structure of Zn-Cr coatings fabricated by electroplating method and electron-beam physical vapor deposition method(EB-P VD). The electroplated Zn-Cr alloy consists mainly of η'-Zn phase for the lower Cr content than 7.9 wt% Cr and ${\gamma}$'-ZnCr phase for the higher Cr content. In the Zn-Cr alloy fabricated by EB-PVD the ${\gamma}$'-ZnCr phase appeared clearly at 3 wt% Cr and it became the sole phase at 50 wt%Cr. The amount of η'-Zn phase decreased obviously with increasing Cr content when it exceeded 15 wt% Cr. The electrochemical measurement of the electroplated Zn-Cr film has shown corrosion potential of about -1000 mV. The current density of active region and the amount of dissolved Zn and Cr decreased significantly with increasing Cr content. The electrochemical characteristics of Zn-Cr alloy fabricated by EB-PVD have shown that the alloy of 50 wt% Cr had the highest corrosion potential(-500 mV) and the lowest critical passive current density than that of the electroplated.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2012.05a
• /
• pp.37-37
• /
• 2012

The coated steels, mainly with zinc by either hot-dip galvanizing or electroplating, are widely used for panels of automotive, electrical appliances and construction, whose size of world market have reached 130 million tons in 2008. Current issues for the coated steels can be integrated in terms of high functionality, low cost, environment-friend and available resource. The best solution can be provided if thin layer coating with higher quality is produced by an eco-friendly process, and PVD, physical vapor deposition, can be an alternative practice to existing coating processes. PVD technologies have been very common ones in electronic and semiconductor industries, but recognized as non-profitable processes for the coated steels due to low process speed and lack of continuous operation skills. Systematic researches from 1990s in Europe, even though discouraged by a shutdown of the first Japanese PVD coating plant in 1999, have realized several continuous PVD coating plants, and also enhanced launching of developments in steel industries. To be successful with PVD coating technologies over existing ones, productivity to meet economics should be created from a highly sophisticated process. Some PVD technologies fit for the high-speed process will be introduced together with experiences from industrial applications.

• Journal of the Semiconductor & Display Technology
• /
• v.18 no.4
• /
• pp.92-95
• /
• 2019

Automation control and the data for control of industrial equipment for the diagnosis and prediction is a key to success in the 4th industrial revolution. It increases process efficiency and productivity through data collection, realtime monitoring, and the data analysis. However, university and research environment are still suffering from logging the data in manual way, and we occasionally loss the equipment data logging due to the lack of automatic data logging system. State variable presents the current condition of the equipment operation which is closely related to process result, and it is valuable to monitor and analyze the data for the equipment health monitoring. In this paper, we demonstrate the collection of equipment state variable data via programmable logic controller (PLC) and the visualization of the collected data over the Web access supervisory control and data acquisition (SCADA). Test vehicle for the implementation of the suggested SCADA system is a relay switched physical vapor deposition system in the university environment.

• Korean Journal of Optics and Photonics
• /
• v.17 no.5
• /
• pp.480-486
• /
• 2006

Generally, IR cut-off filters for mobile phone is coated on the glass substrate at high temperature(above $300^{\circ}C$). In this work, we prepared IR cut-off filters on the poly(methyl methacrylate)(PMMA) substrates at low temperature(about $70^{\circ}C$ ). using the $CeO_2\;and\;SiO_2$ coatings by physical vapor deposition. The surface energies of coated and uncoated PMMA, and adhesive properties of IR cut-off filters coatings were examined using contact angle measurements. We demonstrate the improve of mobile phone optical system using these results.

• Current Photovoltaic Research
• /
• v.7 no.1
• /
• pp.15-20
• /
• 2019

Most high-efficiency n-type silicon solar cells are based on the high quality surface passivation and ohmic contact between the emitter and the metal. Currently, various metalization methods such as screen printing using metal paste and physical vapor deposition are being used in forming electrodes of n-type silicon solar cell. In this paper, we analyzed the degradation factors induced by the front electrode formation process using e-beam evaporation of double passivation structure of p-type emitter and $Al_2O_3/SiN_x$ for high efficiency solar cell using n-type bulk silicon. In order to confirm the cause of the degradation, the passivation characteristics of each electrode region were determined through a quasi-steady-state photo-conductance (QSSPC).