• 한국전기전자재료학회논문지
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• 제30권4호
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• pp.214-217
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• 2017

An IGBT (insulated gate bipolar transistor) device has an excellent current-conducting capability. It has been widely employed as a switching device to use in power supplies, converters, solar inverters, and household appliances or the like, designed to handle high power. The aim with IGBT is to meet the requirements for use in ideal power semiconductor devices with a high breakdown voltage, an on-state voltage drop, a high switching speed, and high reliability for power-device applications. In general, the concentration of the drift region decreases when the breakdown voltage increases, but the on-resistance and other characteristics should be reduced to improve the breakdown voltage and on-state voltage drop characteristics by optimizing the design and structure changes. In this paper, using the T-CAD, we designed the NPT-IGBT (non punch-through IGBT) and FS-IGBT (field stop IGBT) and analyzed the electrical characteristics of those devices. Our analysis of the electrical characteristics showed that the FS-IGBT was superior to the NPT-IGBT in terms of the on-state voltage drop.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 1997년도 추계학술발표회논문집
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• pp.88-92
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• 1997

Power conversion system must be increased swiching frequency in order to achieve a small size, a light weight and a low noise, However, the swiches of converter are subjected to high switching power losses and switching stresses. As a result of those, the power system brings on a low efficiency. In this paper, the authors propose a DC-DC boost converter of high power by partial resonant switch method (PRSM). The switching devices in a proposed circuit are operated with soft swiching and the control technique of those is simplified for switch to drive in constant duty cycle. The partial resonant circuit makes use of a inductor suing step up and a condenser of loss-less snubber. Also the circuit has a merit which is taken to increase of efficiency, as if makes to a regeneration at input source of accumulated energy in snubber condenser without loss of snubber in conventional cirvuit. The result is the the switching loss is very low and the efficiency of system is high. The proposed converter is deemed the most suitable for high power applications where the power switching devices are used.

• 한국재료학회지
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• 제27권6호
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• pp.307-311
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• 2017

Organometal halide perovskite materials, due to the tunability of their electronic and optical properties by control of composition and structure, have taken a position of significant importance in optoelectronic applications such as photovoltaic and lighting devices. Despite numerous studies on the structure - property relationship, however, practical application of these materials in electronic and optical devices is still limited by their processability during fabrication. Achieving nano-sized perovskite particles embedded in a polymer matrix with high loading density and outstanding photoluminescence performance is challenging. Here, we demonstrate that the careful control of nanoparticle formation and growth in the presence of poly(methyl methacrylate) results in perovskite nanoparticle - polymer nanocomposites with very good dispersion and photoluminescence. Furthermore, this approach is found to prevent further growth of perovskite nanoparticles, and thus results in a more uniform film, which enables fabrication using the perovskite nanoparticles.

• 전력전자학회논문지
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• 제27권1호
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• pp.56-62
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• 2022

In this paper, the effect of pulse width modulation methods on thermal loadings and power losses of single-phase five-level NPC inverters for photovoltaic systems are analyzed. The pulse width modulation methods affect the power losses of the NPC inverters and thus lead to different thermal loadings of NPC inverters. To identify the reliability-critical power device with respect to thermal stress, the thermal loadings of I- and T-type NPC inverters are analyzed by applying the unipolar pulse modulation method. Then, the effect of the discontinuous pulse width modulation method on power losses and thermal loadings of power devices of I- and T-type NPC inverters are analyzed. Finally, the operation of NPC inverters applying the discontinuous pulse modulation method is confirmed by experiments. The results show that the discontinuous pulse modulation method is able to improve the reliability of NPC inverters by reducing thermal loadings of reliability-critical power devices and it is more effective for T-type NPC inverters than I-type NPC inverters.

• Journal of Ceramic Processing Research
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• 제13권spc1호
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• pp.140-144
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• 2012

Ga-doped ZnO (GZO) was a limit of application on the photovoltaic devices such as CIGS, CdTe and DSSC requiring high process temperature, because it's electrical resistivity is unstable above 300 ℃ at atmosphere. Therefore, ZTO (zinc tin oxide) was introduced in order to improve permeability and thermal stability of GZO film. The resistivity of GZO (300 nm) single layer increased remarkably from 1.8 × 10-3Ωcm to 5.5 × 10-1Ωcm, when GZO was post-annealed at 400 ℃ in air atmosphere. In the case of the ZTO (150 nm)/GZO (150 nm) double layer, resistivity showed relatively small change from 3.1 × 10-3Ωcm (RT) to 1.2 × 10-2Ωcm (400 ℃), which showed good agreement with change of carrier density. This result means that ZTO upper layer act as a barrier for oxygen at high temperature. Also ZTO (150 nm)/GZO (150 nm) double layer showed lower WVTR compared to GZO (300 nm) single layer. Because ZTO has lower WVTR compared to GZO, ZTO thin film acts as a barrier by preventing oxygen and water molecules to penetrate on top of GZO thin film.

• 전력전자학회논문지
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• 제9권5호
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• pp.438-447
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• 2004

본 논문에서는 하프ㆍ풀-브리지 셀을 이용하는 새로운 멀티레벨 인버터를 제안하고 독립형 태양광 인버터로서의 가능성을 평가한다. 기본 회로 구조는 기존의 11-레벨형 PWM 인버터에 기초하며 세 개의 풀-브리지 모듈 중 하나의 모듈을 하프-브리지 구조로 대체한다. 이 간단한 회로 구조의 변경으로 제안된 멀티레벨 인버터는 세 가지의 장점을 가지게 된다. 첫째, 출력 전압 레벨 수의 증가를 통해 보다 정현적인 출력 전압 파형을 형성 시킬 수 있다. 둘째, 풀-브리지 모듈 대신 하프-브리지 셀을 이용하므로 두 개의 전력 스위치를 줄일 수 있다. 셋째, 쵸핑용으로 이용되는 인버터와 결합된 변압기에 의해 부하로 전달되는 전력량을 저감 시킬 수 있어 전체 효율 개선에 유리하다. 즉, 대부분의 전력은 저주파 스위칭 동작으로 기본 출력전압을 형성하는 인버터와 이와 결합된 변압기에 의해 부하단으로 전달되고, 고주파 스위칭을 하는 쵸핑용 인버터와 이와 결합된 변압기를 통한 출력은 최종 출력전압을 보다 정현화 하기 위한 목적으로 사용되도록 한다. 기존의 11-레벨형 PWM 인버터와 비교를 통해 제안하는 인버터를 평가하고, 컴퓨터 시뮬레이션 및 실험 결과를 통해 독립형 태양광 인버터로서의 가능성을 입증한다.

• 멤브레인
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• 제25권6호
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• pp.530-537
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• 2015

태양광 발전시스템은 태양복사에너지를 반도체의 광전효과를 이용하여 전기에너지로 직접 전환시키는 에너지변환 시스템이다. 태양전지의 내구성과 에너지변환율에 영향을 미치는 핵심소재로는 다층형 필름구조를 갖는 백시트를 들 수 있다. 대표적인 상용 백시트는 고내구성 poly(vinyl fluoride) (PVF) 필름이 중심축에 위치하고 가격저감을 위해 도입된 poly(ethylene terephthalate) (PET) 필름이 그 양쪽에 접합된 삼층구조로 구성된다. 하지만, PVF 필름의 높은 가격은 저렴한 고내구성 백시트를 요구하는 시장상황을 반영하기 어렵게 한다. 이를 위한 해결책으로는 PVF 필름을 결정성 PET 필름으로 대체한 탄화수소계 백시트가 될 수 있다. 하지만, PET 필름의 본질적인 가수분해에 대한 취약성으로 인해, 추가적인 수분에 대한 배리어성 부여는 필수적이다. 이를 위해 본 연구에서는 소수성 실리카 나노입자 분산기술을 활용한 수분차단성 폴리우레탄 접착제를 개발코자 하였다. 개발된 접착제는 내부에 위치한 PET 필름으로의 수분침투를 약화시켜, 가수분해속도를 지연시킬 것이라 기대되었다. 본 개념의 효용성을 확인하기 위해, 표준화된 온습도조건에 노출된 이후의 일반접착제와 수분차단성 접착제가 도입된 백시트의 기계적 강도 및 시간당 태양전지성능 변화가 비교평가되었다.

• 한국산학기술학회논문지
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• 제21권9호
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• pp.652-661
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• 2020

최근, 기후변화와 미세먼지 등에 의한 지구규모적인 환경문제를 해결하기 위하여, 정부에서는 RE 3020 정책을 시행하고 있으며, 이에 따라 대용량의 태양광전원이 배전계통에 연계되고 있다. 하지만, 대용량 태양광전원이 배전계통에 연계되는 경우, 태양광전원의 연계위치와 용량, 연계방식 및 고장지점에 따라 사고전류의 크기와 방향이 변하게 되고, 지락사고가 발생하여도 분류효과에 의하여 보호협조기기가 동작하지 않는 부동작 현상이 발생할 가능성이 있다. 따라서, 본 논문에서는 다수의 태양광전원이 배전계통에 연계되어 운용되는 경우, 리클로저(recloser, 이하 R/C)의 설치개소에 따라 보호협조기기가 동작하지 않는 부동작 메커니즘을 제시하고, 이를 바탕으로 다양한 시나리오에 기반한 보호협조기기의 부동작 패턴탐색 알고리즘을 제안한다. 또한, 보호협조 전용 해석 프로그램인 Off-DAS를 이용하여, 다수의 태양광 전원이 연계된 배전계통 모델링을 수행하고, 이를 바탕으로 다양한 시나리오에 따른 보호협조기기 부동작 패턴을 분석한다. 제안한 보호협조기기의 부동작패턴 탐색알고리즘 및 모델링을 바탕으로 시뮬레이션을 수행한 결과, R/C의 설치개소 및 태양광전원의 연계 패턴에 따라 부동작 현상이 발생함을 알 수 있어, 본 논문의 유용성을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.416-416
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• 2016

Organic-inorganic metal halide perovskite solar cells have received attention because it has a number of advantages with excellent light harvesting, high carrier mobility, and facile solution processability and also recorded recently power conversion efficiency (PCEs) of over 20%. The major issue on perovskite solar cells have been reached the limit of small area laboratory scale devices produced using fabrication techniques such as spin coating and physical vapor deposition which are incompatible with low-cost and large area fabrication of perovskite solar cells using printing and coating techniques. To solution these problems, we have investigated the feasibility of achieving fully printable perovskite solar cells by the blade-coating technique. The blade-coating fabrication has been widely used to fabricate organic solar cells (OSCs) and is proven to be a simple, environment-friendly, and low-cost method for the solution-processed photovoltaic. Moreover, the film morphology control in the blade-coating method is much easier than the spray coating and roll-to-roll printing; high-quality photoactive layers with controllable thickness can be performed by using a precisely polished blade with low surface roughness and coating gap control between blade and coating substrate[1]. In order to fabricate perovskite devices with good efficiency, one of the main factors in printed electronic processing is the fabrication of thin films with controlled morphology, high surface coverage and minimum pinholes for high performance, printed thin film perovskite solar cells. Charge dissociation efficiency, charge transport and diffusion length of charge species are dependent on the crystallinity of the film [2]. We fabricated the printed perovskite solar cells with large area and flexible by the bar-coating. The morphology of printed film could be closely related with the condition of the bar-coating technique such as coating speed, concentration and amount of solution, drying condition, and suitable film thickness was also studied by using the optical analysis with SEM. Electrical performance of printed devices is gives hysteresis and efficiency distribution.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.426.2-426.2
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• 2016

Numerous of researches are being conducted to improve the efficiency of $Cu_2ZnSnSe_4$ (CZTSe)-based photovoltaic devices, which is one of the most promising candidates for low cost and environment-friendly solar cells. In this work, we concentrate on the back contact of the devices. A proper thickness of $MoSe_2$ in back contact structure is believed to enhance adhesion and ohmic contact between Mo back contact and absorber layer. Nevertheless, too thick $MoSe_2$ layers that are grown during high-temperature selenization process can impede the current collection, thus resulting in low cell performance. By applying molybdenum nitride as a barrier in back contact structure, we were able to control the thickness of $MoSe_2$ layer, which resulted in lower series resistance and higher fill factor of CZTSe devices. The phase transformation of Mo-N binary system was systematically studied by changing $N_2$ concentration during the sputtering process. With a proper phase of Mo-N fabricated by using an adequate partial pressure of $N_2$, the efficiency of CZTSe solar cells as high as 8.31% was achieved while the average efficiency was improved by about 2% with respect to that of the referent cells where no barrier layer was employed.