• 제목/요약/키워드: Photovoltaic cells

검색결과 798건 처리시간 0.026초

Hybrid Solar Cells with Polymer/Fullerene Bulk Heterojunction Layers Containing in-situ Synthesized CdS Nanocrystals

  • Kwak, Eunjoo;Woo, Sungho;Kim, Hwajeong;Kim, Youngkyoo
    • Current Photovoltaic Research
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    • 제2권4호
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    • pp.152-156
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    • 2014
  • We report hybrid solar cells fabricated with polymer/fullerene bulk heterojunction layers that contain inorganic nanocrystals synthesized by in-situ reaction in the presence of polymer chains. The inorganic (cadmium sulfide) nanocrystal ($CdS_{NC}$) was generated by the reaction of cadmium acetate and sulfur by varying the reaction time up to 30 min. The synthesized $CdS_{NC}$ showed a rectangular flake shape, while the size of $CdS_{NC}$ reached ca. 150 nm when the reaction time was 10 min. The performance of hybrid solar cells with $CdS_{NC}$ synthesized for 10 min was better than that of a control device, whereas poor performances were measured for other hybrid solar cells with $CdS_{NC}$ synthesized for more than 10 min.

용액 공정으로 만든 Cu(In,Ga)S2 박막태양전지의 전기적 특성 (Electrical Characteristics of Solution-processed Cu(In,Ga)S2 Thin Film Solar Cells)

  • 김지은;민병권;김동욱
    • Current Photovoltaic Research
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    • 제2권2호
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    • pp.69-72
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    • 2014
  • We investigated current-voltage (I-V) and capacitance (C)-V characteristics of solution-processed thin film solar cells, consisting of $Cu(In,Ga)S_2$ and $CuInS_2$ stacked absorber layers. The ideality factors, extracted from the temperature-dependent I-V curves, showed that the tunneling-mediated interface recombination was dominant in the cells. Rapid increase of both series- and shunt-resistance at low temperatures would limit the performance of the cells, requiring further optimization. The C-V data revealed that the carrier concentration of the $CuInS_2$ layer was about 10 times larger than that of the $Cu(In,Ga)S_2$ layer. All these results could help us to find strategies to improve the efficiency of the solution-processed thin film solar cells.

Silicon Solar Cells

  • Yi, Jun-Sin
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2007년도 제32회 학술대회 초록집
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    • pp.44-44
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    • 2007
  • PDF

실리콘 태양전지 (Brief Review of Silicon Solar Cells)

  • 이준신
    • 한국진공학회지
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    • 제16권3호
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    • pp.161-166
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    • 2007
  • 태양광발전이란 태양에너지를 직접 전기 에너지로 변환시키는 것이다. 지난 5년 동안 태양광발전은 세계적으로 높은 성장률을 보여 왔다. 특히 2006년에는 30%, 이상의 성장을 가져왔으며 앞으로 20년 동안 평균 생산 성장률은 매년 27%-34%가 될 것으로 예상하고 있다. 현재까지는 태양광발전을 이용해 생산된 전력의 가격은 기존 전력발전의 가격보다 높지만 태양광 기술의 발전과 효율의 향상으로 점점 그 가격이 떨어지고 있다. 뿐만 아니라 태양전지용의 실리콘 기판의 대량생산은 점점 더 태양전지의 가격 저하를 가져오고 있다. 태양전지의 변화효율의 한계는 30%이다. 현재에는 결정질 실리콘 태양전지가 주를 이루고 있지만 미래에는 박막 실리콘 태양전지가 주도를 이룰 것이다. 2030년에는 박막 태양전지가 90%이상을 이루고 결정질 태양전지는 10% 이하로 떨어질 것을 예상하고 있다. 성균관대학교에서는 결정질 실리콘 태양전지의 저가화와 고효율화를 주 연구로 수행하고 있다. 현재 성균관대학교에서는 스크린 프린트를 이용해서 16% 이상의 다결정 실리콘 태양전지와 17% 이상의 단결정 실리콘 태양전지를 성공적으로 제작하였다. 제 1세대에서 다음 세대의 태양전지 발전의 과정은 새로운 접근법으로 확대되지만 여전히 실리콘이 지금까지 주된 재료로 쓰이고 있다. 2010년까지 이러한 기술들에 대한 격차는 여전히 있지만 태양광발전을 통한 전력생산의 가격은 60 cent/watt 정도로 예상하고 있다. 태양광발전은 청정에너지로서 재생불가능 하고 고갈되어가고 환경오염을 일으키는 다른 에너지와 비교하여 점점 대체에너지로서의 자리를 확립해 가고 있다.

Secondary Phase and Defects in Cu2ZnSnSe4 Solar Cells with Decreasing Absorber Layer Thickness

  • Kim, Young-Ill;Son, Dae-Ho;Lee, Jaebaek;Sung, Shi-Joon;Kang, Jin-Kyu;Kim, Dae-Hwan;Yang, Kee-Jeong
    • Current Photovoltaic Research
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    • 제9권3호
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    • pp.84-95
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    • 2021
  • The power conversion efficiency of Cu2ZnSnSe4 (CZTSe) solar cells depends on the absorber layer thickness; however, changes in the characteristics of the cells with varying absorber layer thickness are unclear. In this study, we investigated the changes in the characteristics of CZTSe solar cells for varying absorber layer thickness. Five absorber thicknesses were employed: CZTSe1 2.78 ㎛, CZTSe2 1.01 ㎛, CZTSe3 0.55 ㎛, CZTSe4 0.29 ㎛, and CZTSe5 0.15-0.23 ㎛. The efficiency of the CZTSe solar cells decreased as the absorber thickness decreased, resulting in power conversion efficiencies of 10.45% (CZTSe1), 8.67% (CZTSe2), 7.14% (CZTSe3), 3.44% (CZTSe4), and 1.54% (CZTSe5). As the thickness of the CZTSe absorber layer decreased, the electron-hole recombination at the grain boundaries and the absorber-back-contact interface increased. This caused an increase in the current loss, owing to light loss in the long-wavelength region. In addition, as the thickness of the CZTSe absorber layer decreased, more ZnSe was produced, and the resulting defects and defect clusters led to an open-circuit voltage loss.

Recent Development of P-Tunnel Oxide Passivated Contact Solar Cells

  • Yang Zhao;Muhammad Quddamah Khokhar;Hasnain Yousuf;Xinyi Fan;Seungyong Han;Youngkuk Kim;Suresh Kumar Dhungel;Junsin Yi
    • 한국전기전자재료학회논문지
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    • 제36권4호
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    • pp.332-340
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    • 2023
  • Crystalline silicon solar cells have attracted great attention for their various advantages, such as the availability of raw materials, high-efficiency potential, and well-established processing sequence. Tunnel oxide passivated contact (TOPCon) solar cells are widely regarded as one of the most prospective candidates for the next generation of high-performance solar cells because an efficiency of 26% has been achieved in small-area solar cells. Compared to n-type TOPCon solar cells, the photo conversion efficiency (PCE) of p-type TOPCon is slightly higher. The highest PCEs of p-type TOPCon and n-type TOPCon solar cells are 26.0% and 25.8%, respectively. Despite the highest efficiency in small-area cells, limited progress has been achieved in p-type TOPCon solar cells for large are due to their lower carrier lifetime and inferior surface passivation with the boron-doped c-Si wafer. Nevertheless, it is of great importance to promoting the p-type TOPCon technology due to its lower price and well-established manufacturing procedures with slight modifications in the PERC solar cells production lines. The progress in different approaches to increase the efficiencies of p-type TOPCon solar cells has been reported in this review article and is expected to set valuable strategies to promote the passivation technology of p-type TOPCon, which could further increase the efficiency of TOPCon solar cells.

실리콘 이종접합 태양전지의 버스바 전극 두께와 접합강도의 상관관계 (A Study on Correlation between Busbar Electrodes of Heterojunction Technology Solar Cells and the Peel Strength)

  • 전다영;문지연;박고등;오트곤게렐 줄만다크;남혜령;권오련;임현수;김성현
    • Current Photovoltaic Research
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    • 제11권2호
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    • pp.44-48
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    • 2023
  • In heterojunction technology (HJT) solar cells, low-temperature curing paste is used because the passivation layer deteriorates at high temperatures of 200℃ or higher. However, manufacturing HJT photovoltaic (PV) modules is challenging due to the weak peel strength between busbar electrodes and cells after soldering process. For this issue, the electrode thicknesses of the busbars of the HJT solar cell were analyzed, and the peel strengths between electrodes and wires were measured after soldering using an infrared (IR) lamp. As a result, the electrodes printed by the screen printing method had a difference in thickness due to screen mask. Also, as the thickness of the electrode increased, the peel strength of the wire increased.