• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.42-44
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• 2003

The paper presents the method and apparatus for conformal photoresist spray coating on the 3D structured substrate. The system consists of a high-temperature-rotational chuck, ultrasonic spray nozzle module, angle control module and nozzle moving module. The coating uniformity is acquired by controlling the moving speed of the ultrasonic spray nozzle across the substrate which is rotated constantly. To coat the photoresist conformally the spray angle of the nozzle and the temperature of the substrate are controlled during spray coating. The rotational chuck can be heated up by hot air or $N_2$. The photoresist (AZ1512) has been coated on the 3D structured wafer by spray coating system and the characteristics have been evaluated.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.9
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• pp.4467-4471
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• 2013

In this research, developed full-scan photoresist coating system(FPCS) can improve the efficiency of the photoresist coating system essential for spinner equipment in nano semiconductor manufacturing process. The devices developed in this research, which can be swiftly replaced in case abnormal state element changes or wafer manufacturing defect occurs, are anticipated to improve module yield as well as real-time monitoring on the state element in order to prevent the complex process defect due to the photoresist miss coating.

• Journal of Sensor Science and Technology
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• v.15 no.3
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• pp.153-157
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• 2006

This paper presents the method for three-dimensional micro structure with photoresist spray coating system. The system consists of a high temperature rotational chuck, ultrasonic spray nozzle module, angle control module and nozzle moving module. Spray coating system is effected by several parameters such as the solid contents, the dispensed volume, the scanning speed of the spray nozzle and the wafer of dimension. The photoresist (AZ 1512) has been coated on the three-dimensional micro structure by spray coating system and the characteristics have been evaluated.

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.59-66
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• 1996

Polyimides containing cyclobutane ring in main chain is known to be thermally stable and able to be developed in organic solvents after photolysis with 254 nm UV light. This type of polyimides can be used as promising positive photoresist in VLSI fabrication process. In the current VLSI process, photoresist films are formed by spin coating. The film thickness is more than several hundred nano meters. It seems that there is room for improvement of film coating process by introducing Langmuir Blodgett technique. Thereby ultra thin film photoresist can be formed, and higher density of integration in VLSI be achieved. In the present work, depositing procedure of LB films of this polyimide was investigated. LB film thickness was measured by ellipsometry to evaluate deposited film status. Chemical imidization procedure was studied to avoid several problems in thermal imidization. The pattern of submicron dimension has successfully formed on LB film of 8nm thick, which found showing good contrast.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.2
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• pp.68-72
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• 2003

In this paper, we developed a new thick photoresist fabrication technology for 3-dimensional microstructures. In general, like as AZ photoresist was coated with thin film thickness about 1 $\mu\textrm{m}$ to 30 $\mu\textrm{m}$, but photoresist like SU-8 has thickness of several tens $\mu\textrm{m}$ or more and high aspect ratio. When we fabricate a microstructure using the thick photoresist like SU-8, cracks on the SU-8 thick photoresist are appeared by stress which was caused by sudden cooling down during bake of the thick photoresist spun on wafer. Thus, it was hard to fabricate the microstructure using the thick photoresist for electroplating. In this paper, we developed a new process to produce a 3-dimensional microstructure without the crack by stress through a suitable thick photoresist coating, time control of cool down and time control of PEB (Post Expose Bake).

• Journal of the Korean Graphic Arts Communication Society
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• v.19 no.2
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• pp.68-78
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• 2001

UV-curable resin has the properties of quick-drying, thigh productivity at low temperature, energy savint, space saving, solventless, non-polluting and low-stinking, and thus, UV-curing system has been widely used in the fields of printing inks, adhesives, paints and coating agents. This study has been executed to micro-patterning used UV-curable resin, The micro-patterning properties of this photoresist were investigated under irradiation of UV light low pressure mercury lamp. When the exposed photoresist film was developed by pure water developer, the resolution of this photoresist was about 50$\mu\textrm{m}$.

• Transactions on Electrical and Electronic Materials
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• v.15 no.3
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• pp.159-163
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• 2014

More accurate CD (Critical Dimension) control is required for the nanometer-scaled devices. However, since the reflectivity between substrate and PR (Photoresist) becomes higher, the CD (Critical Dimension) swing curve was intensified. The higher reflectivity also causes PR notching due to the pattern of sub-layer. For this device requirement, it was optimized for the thickness, refractive index(n) and absorption coefficient(k) in the bottom anti-reflective coating(BARC; SiON) and photoresist with the minimum reflectivity. The computational simulated conditions, which were determined with the thickness of 33 nm, n of 1.89 and k of 0.369 as the optimum condition, were successfully applied to the experiments with no standing wave for the 0.13um-device. At this condition, the lowest reflectivity was 0.44%. This optimum condition for BARC SiON film was applied to the process for 0.13um-device. The optimum SiON film as BARC to PR and sub-layer could be formed with the accurate CD control and no standing waver for the nanometer-scaled semiconductor manufacturing process.

• Laser Solutions
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• v.3 no.2
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• pp.35-43
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• 2000

Laser direct patterning of the coated photoresit (PMER-NSG31B) layer was studied to make halftone dots on gravure printing roll. The selective laser hardening of photoresist by Ar-ion laser(wavelength : 333.6nm∼363.8nm) was controlled by the A/O modulator. The coating thickness in the range of 5㎛∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines formed under laser power of 200∼260㎽ and irradiation time of 4.4∼6.6$\mu$ sec/point were investigated after developing. The hardened width increased according to the increase of coating thickness. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line widths of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

• International Journal of Precision Engineering and Manufacturing
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• v.3 no.1
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• pp.26-32
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• 2002

Laser direct patterning of the coated photoresist (PMER-NSG31B) layer was studied to make halftone dots on the gravure printing roll. The selective laser hardening of the photoresist by Ar-ion laser(wavelength: 333.6∼363.8 nm) was controlled by the A/O modulator. The coating thickness in the range of 5∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines farmed under the laser power of 200∼260mW and irradiation time of 4.4∼6.6 $\mu$ sec/point were investigated after developing. The hardened width increased as the coating thickness increased. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line width of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2541-2543
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• 1998

This paper describes the fabrication process to fabricate metallic structure of high aspect ratio using LlGA-like process. SU-8 is used as an electroplating mold. SU-8 is an epoxy-based photoresist, designed for ultrathick PR structure with single layer coating [1,2]. We can get more than $100{\mu}m$ thick layer by single coating with conventional spin coater, and applying multiple coating can make thicker layers. In the experiments, we used different kinds of SU-8, having different viscosity. To optimize the conditions for mold fabrication process, experiments are performed varying spinning time and speed, soft-bake, develop and PEB (Post Expose Bake) condition. With the optimized condition, minimum line and space of $3{\mu}m$ pattern with a thickness of $40{\mu}m$ and $4{\mu}m$ pattern with a thickness of $130{\mu}m$ were obtained. Using the patterned PR as a plating mold, metallic structure was fabricated by electroplating. We have fabricated a electroplated nickel comb actuator using SU-8 as plating mold. The thickness of PR mold is $45{\mu}m$ and that of plated nickel is$40{\mu}m$. Minimum line of the mold is $5{\mu}m$. Patterned metallic layer or polymer layer, which has selectivity with the structural plated metallic layer, can be used as sacrificial layer for fabrication of free-standing structure.