• Journal of the Korean Graphic Arts Communication Society
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• v.12 no.1
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• pp.47-65
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• 1994

Synthetic photoresist have partially displaced the natural materials, but bichromated casein have remained in use until recently at etching industry such as chemical milling. The object of this paper is that the mutual relations among factors and suitable latitude in pattern formation or etching process when is to be applied the casein ammonium bichromate photoresist.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.895-896
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• 2009

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.179-182
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• 2011

• Journal of Sensor Science and Technology
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• v.15 no.3
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• pp.153-157
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• 2006

This paper presents the method for three-dimensional micro structure with photoresist spray coating system. The system consists of a high temperature rotational chuck, ultrasonic spray nozzle module, angle control module and nozzle moving module. Spray coating system is effected by several parameters such as the solid contents, the dispensed volume, the scanning speed of the spray nozzle and the wafer of dimension. The photoresist (AZ 1512) has been coated on the three-dimensional micro structure by spray coating system and the characteristics have been evaluated.

• Journal of the Korean Applied Science and Technology
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• v.13 no.3
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• pp.145-153
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• 1996

Naphthoquinone-1,2-diazide-5-sulfonyl[NDAS] derivatives members of quinone diazide compound that are utilizable as photosensitive polymer material were synthesized, and photoresist were prepared by mixing these derivatives with m-cresol novolak(a matrix resin) at various weight ratios. Photosensitive characteristics of photoresist were studied by examining UV and IR, relative sensitivity using a Gray scale method, and SEM to analyze if they can be used as photosensitive material in printing process. Experimental results showed that, by UV, NDAS derivatives were photoconverted and developer-soluble photoresist were produced. The mixing ratio of 1:4(by mass) of NDAS+p-ydroxybenzophenone+sensitizer and m-cresol novolak gave rise to the highest dissolution rate. In addition, photoresist obtained at this condition resulted in the most superior sensitivity and contrast.

• Korean Journal of Optics and Photonics
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• v.5 no.2
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• pp.298-303
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• 1994

Microlens arrays are fabricated by melting "islands" of thick photoresist on a glass substrate. Microlenses with diameters $25\mu\textrm{m}$, $50\mu\textrm{m}$, $100\mu\textrm{m}$are made. Their surface profiles are obtained by a scanning electron microscope and a mechanical surface profilometer. The wavefront of the microlenses is measured by phase-shifting techniques using a Mach-Zehnder-like configuration. Thereby wavefront errors, focal lengths. point spread functions are obtained. The microlens with the diameter of $100\mu\textrm{m}$ has focal length of $164\mu\textrm{m}$ and spot diameter is less than $5\mu\textrm{m}$..

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.187-188
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• 2005

In this paper, big free standing metal structures for electrostatic MEMS switches are easily fabricated using photoresist sacrificial layer. The entire process sequence, through the removal of the sacrificial layer, is kept below 150 $^{\circ}C$ to avoid curing problem of photoresist sacrificial layer. Metal structure is fabricated by thermal evaporator and a self test electrode is fabricated underlying metal suspended structure for testing by electrostatic force. The new wet release process is considered using methanol rinse, general wet release process cause stiction problem by capillary force during drying, and the yield is dramatically improved than previous wet release process using DI water rinse. The fabrication becomes much simpler and cheaper with use of a photoresist sacrificial layer.

• Journal of the Korean Graphic Arts Communication Society
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• v.20 no.2
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• pp.131-140
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• 2002

Chemically amplified deep UV(CA-DUV) resists are typically based on a combination of an acid labile polymer and a photoacid generator(PAG) but acid amplification type photoresist is formulated by addition of the acid amplifiers to chemically amplified resist system(CAPs). We developed acid amplifiers base on cyclohexanediol such as 1-methacryloyloxy-4-tosyloxy cyclohexane(MTC) and poly(MTC$_{10}$-co-tBMA$_{90}$)(P-1) to enhance photosensitivity. P-1 is a copolymer of tert-butyl methacrylate and MTC as a positive working photoresist based on polymeric acid amplifier in order to enhance photosensitivity and simplify the process of fomulating a photoresist. P-1 exhibited 2X higher photosensitivity compared with PtBMA. The acid amplifiers showed reasonable thermal stability for resist processing temperature and higher photosensitivity compared with chemically amplified resist.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.12
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• pp.591-596
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• 2006

we have been developed on the ultra high concentration ozone generator system which is the core technology in the realization of the semiconductor photoresist strip process using the ozone-vapor chemistry. The proposed ozone generator system has the structure of the surface discharge type which adopt the high purity ceramic dielectric tube. We investigate the performance of the proposed ozone generator system experimentally and the results show that the system has very high ozone concentration characteristics of $19.7[wt%/O_2]$ at the flow rate of $0.3[{\ell}/min]$ of each discharge cell. As a result of the silicon wafer photoresist strip test, we obtained the strip rate of about 400[nm/min] at the ozone concentration of $16[wt%/O_2]$ and flow rate of $8[{\ell}/min]$. So, we confirmed that it's possible to use the proposed high concentration ozone generator system for the ozone-vapor photoresist strip process in the semiconductor and FPD industry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.214-215
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• 2007

Etch rates and surface chemistry of phenol formaldehyde-based photoresist after short time $O_2\;and\;N_2O$ radio frequency (RF) plasma treatment depending on exposure time were investigated. It was found that the etch rate of photoresist sharply increased after discharge turn on and reached a limit with increase in plasma exposure time in both gases. X-ray photoelectron spectroscopy (XPS) analysis showed that the surface chemical structure become nearly constant after the treatment of 15 sec. Concentration of surface oxygen-containing groups after processing both in oxygen and in $N_2O$ plasmas is similar.