• 진공이야기
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• 제4권3호
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• pp.16-20
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• 2017

Graphene has emerged as a promising material for optoelectronic applications including as ultrafast and broadband photodetector, optical modulator, and nonlinear photonic devices. Graphene based devices have shown the feasibility of ultrafast signal processing for required for photonic integrated circuits. However, on-chip monolithic nanoscale light source has remained challenges. Graphene's high current density, thermal stability, low heat capacity and non-equilibrium of electron and lattice temperature properties suggest that graphene as promising thermal light source. Early efforts showed infrared thermal radiation from substrate supported graphene device, with temperature limited due to significant cooling to substrate. The recent demonstration of bright visible light emission from suspended graphene achieve temperature up to ~3000 K and increase efficiency by reducing the heat dissipation and electron scattering. The world's thinnest graphene light source provides a promising path for on-chip light source for optical communication and next-generation display module.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.824-827
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• 2000

Fabrication of InP-based photonic devices by dry etch Process is important for clear formation of waveguide mesa structure. We have developed more efficient etch process of the inductively coupled plasma (ICP) with low damages and less polymeric deposits for the InP-based photonic devices than the reactive ion etching (RIE) technique. We report the tendency of etch rate variation by the process parameters of the RF power, pressure, gas flow rate, and the gas mixing ratio. The surface roughness of InP-based waveguide structure was more improved by the light wet etching in the mixed solution of H$_2$SO$_4$:H$_2$O (1:1)

• Journal of the Optical Society of Korea
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• 제12권4호
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• pp.288-297
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• 2008

Recent research efforts on study of silicon photonics utilizing stimulated Raman scattering have largely overlooked temperature effects. In this paper, we incorporated the temperature dependences into the key parameters governing wave propagation in silicon waveguides with Raman gain and investigated how the temperature affects the solution of the coupled-mode equations. We then carried out, as one particular application example, a numerical analysis of the performance of wavelength converters based on stimulated Raman scattering at temperatures ranging from 298 K to 500 K. The analysis predicted, among other things, that the wavelength conversion efficiency could decrease by as much as 12 dB at 500 K in comparison to that at the room temperature. These results indicate that it is necessary to take a careful account of temperature effects in designing, fabricating, and operating Raman silicon photonic devices.

• 융합정보논문지
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• 제10권6호
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• pp.28-34
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• 2020

본 논문에서는 VCSEL (Vertical Cavity Surface Emitting Laser) 레이저를 만드는 구조와 유사한 GaAs 웨이퍼상에 MOCVD (Metal Organic Chemical Vapor Deposition) 장비로 GaAs와 AlGaAs 에피층을 형성시킨 구조를 사용한다. 3차원 공진현상에 의해 자연 발생되는 광양자테 (PQR: Photonic Quantum Ring) 소자를 건식 식각 방법인 CAIBE (Chemically Assisted Ion Beam Etching) 기술로 제작하였지만, 진공 분위기에서 진행해야 하는 문제점 때문에 저가격으로 쉽게 소자를 제작할 수 있는 방법이 연구되었고, 그 결과 인산, 과산화수소, 메탄올이 혼합된 용액의 습식식각 기술로 가능성을 확인하였으며, 이 방법을 적용하여 소자를 제작한 내용에 대해 논한다. 또한, 제작된 광소자의 스펙트럼을 측정하였고, 이 결과들을 이론적으로 해석하여 얻은 파장값과 비교한다. 광양자테 소자는 3차원 형상으로 세포를 모델링하거나, 디스플레이 분야로의 응용이 가능할 것으로 기대한다.

• 디지털융복합연구
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• 제19권11호
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• pp.341-349
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• 2021

최근 조명 산업이 중요한 분야로 인식되면서 PQR (Photonic Quantum Ring) 소자는 LED(Light Emitting Diode)를 대체할 수 있는 차세대 광원이 될 전망이다. 본 연구에서는 기존 연구와 유사한 결과를 검증하고, 소자의 광특성을 분석하기 위해 광섬유가 연결된 스테이지에 x, y, z 좌표를 입력하면 자동으로 이동하며, 또한, 소자에 광섬유를 근접시키는 NSOM (Near field scanning optical microscopy) 장치를 추가한 측정 시스템을 이용하여 소자의 광특성 실험과 공진 및 어레이 소자의 광특성 시뮬레이션을 통해 조명용 소자로 가능성을 검증하고자 하였다. 이를 위해 메사와 홀 형태가 동시에 존재하는 메사 직경 40㎛, 홀 직경 3㎛의 소자를 제작하여 소자의 근접장으로 PQR 소자는 ㎂에서 동작하며, 메사와 홀 소자는 서로 독립적으로 구동됨을 관찰하였다. 위치에 따른 소자의 광파장 스펙트럼을 측정하여 메사와 홀 소자에 의한 커플링 현상을 처음으로 확인하였다.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2004년도 춘계총회 및 연구발표회 초록집
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• pp.34.1-34.1
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• 2004

• 한국광학회:학술대회논문집
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• 한국광학회 2004년도 하계학술발표회
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• pp.160-161
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• 2004

• 한국광학회:학술대회논문집
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• 한국광학회 2001년도 하계학술발표회
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• pp.284-286
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• 2001

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 춘계학술대회
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• pp.1078-1082
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• 2003

A feasibility study for the fabrication of master replication with nanostructures by Nanoimprint Lithography (NIL) was investigated for application of polymer Photonic Bandgap (PBG) devices used in photonic IC. Large area gratings of $9{\times}15(mm^2)$ with p = 400 nm was successfully embossed on PMMA on silicon wafer and the embossing parameters (temperature, pressure, time) were established. A precise control of $O_2$ plasma Reactive Ion Etching (RIE) process time allowed window opening over the whole area despite the presence of wafer bending. Master replication with aspect ratio 1 was successfully fabricated, but master replication with aspect ratio 3 needs to optimize parameters. All replications were done in a NIL process.

• 전자공학회논문지A
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• 제32A권5호
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• pp.60-70
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• 1995

As a Basic study to implement a wide-band photonic switching sysetm, we proposed a scheme of free-space-division-multiplexed photonic switching based on a holographic interconnectio method and carried out simple experiments on it. First, we recorded holgraphic interconnection element array for nonblocking optical interconnections. Just a single stage of the array realizes full optical interconnections between NN${\times}$NN input prots and NN${\times}$NN output ports in 3-D space. Next, in reading of the array for optical internnections, we showed that the zeroth-order diffacted beam could be eliminated in the output port by introducing a right angle prism. The elimination of the zeroth-order diffracted beam reduces optical noise in the output ports and provides conveniences of interconnection control in our scheme. Finally, from the experiments on ON-OFF switching of the optical interconnection paths one by one using a spatial (display of the liquid crystal telecision), we showed the feasibility of photonic wsitching based on the holographic interconnection method. We also estimated approximately the maximum interconnectio scale that can be realized without difficulty with current optical devices.