• Journal of Integrative Natural Science
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• v.6 no.3
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• pp.183-186
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• 2013

Well defined 1-dimentional (1-D) photonic crystals of polystyrene replicas have been successfully obtained by removing the porous silicon from the free-standing rugate porous silicon/phenylmethylpolysiloxane composite film. Rugate porous silicon was prepared by an electrochemical etching of silicon wafer in HF/ethanol mixture solution. Exfoliated rugate porous silicon was obtained by an electropolishing condition. A composite of rugate porous silicon/phenylmethylpolysiloxane composite film was prepared by casting a toluene solution of phenylmethylpolysiloxane onto the top of rugate porous silicon film. After the removal of the template by chemical dissolution, the phenylmethylpolysiloxane castings replicate the photonic features and the nanostructure of the master. The photonic phenylmethylpolysiloxane replicas are robust and flexible in ambient condition and exhibit an excellent reflectivity in their reflective spectra. The photonic band gaps of replicas are narrower than that of typical semiconductor quantum dots.

• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.301-302
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• 2007

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.27 no.2
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• pp.1-6
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• 2013

In this paper, we implemented a polarimetric strain sensor using a Sagnac birefringence interferometer composed of a polarization-maintaining photonic crystal fiber (PM-PCF). By changing the length of the PM-PCF employed as the sensor head of the proposed sensor, the length dependence of the strain sensitivity was investigated. With respect to 5.0-, 7.5-, and 10.0-cm-long PM-PCFs, strain measurements were done in a measurement range of $0{\sim}6m{\varepsilon}$, and strain sensitivities of ~2.04, ~1.92, and ${\sim}1.73pm/{\mu}{\varepsilon}$ were obtained, respectively. If an ideal PM-PCF with no length dependence of a modal birefringence is used for the proposed sensor, the strain sensitivity is independent of the length of the sensor head (PM-PCF). In the practical PM-PCF used in experiments, however, a shorter PM-PCF has a higher length dependence of the modal birefringence due to its imperfectness and nonuniformity of the internal structure, resulting in a higher length dependence of the strain sensitivity.

• Bulletin of the Korean Chemical Society
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• v.35 no.3
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• pp.705-708
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• 2014

We demonstrate the blue InGaN/GaN multiple quantum wells light-emitting diodes (LEDs) with an embedded air-gap photonic crystal (PC) which was fabricated by the lateral epitaxial overgrowth of GaN layer on the tungsten (W) nano-masks. The periodic air-gap PC was formed by the chemical reaction of hydrogen with GaN on the W nano-mask. The optical output power of LEDs with an air-gap PC was increased by 26% compared to LEDs without an air-gap PC. The enhanced optical output power was attributed to the improvement in internal quantum efficiency and light extraction efficiency by the air-gap PC embedded in GaN layer.

• Journal of the Optical Society of Korea
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• v.19 no.1
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• pp.63-68
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• 2015

A one-step fabrication of a photonic crystal (PC) with functional defects is demonstrated. Using multi-beam phase-controlled holographic lithography with a diffracting optical element, large area one dimensional (1D) and two dimensional (2D) PCs with periodic defects were fabricated. The uniform area is up to $2mm^2$, and tens of defect channels have been introduced in the 1D and 2D PC structure. This technique gives rise to substantial reduction in the fabrication complexity and significant improvement in the spatial accuracy of introducing functional defects in photonic crystals. This method can also be used to design and fabricate three dimensional (3D) PCs with periodic defects.

• Korean Journal of Optics and Photonics
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• v.21 no.6
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• pp.235-240
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• 2010

We fabricate highly birefringent photonic crystal fiber with new structure using a stack and draw method. Fabricated fiber has two big air holes, one at each side of the outside air cladding region, leading to core ellipticity during the drawing process. Birefringence of the fabricated Hi-Bi PCF is measured to be $2.29{\times}10^{-4}$ (at 1550 nm).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.120-123
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• 2002

In this study it had an excellent optical characteristic, it followed in the creation rate and the refractive index regulation to the ease. Chalcogenide produced the $As_{45}Se_{45}Te_{10}$ thin film and the $MgF_{2}$ thin film. It measured thin film plan simulation, and the thin film has a 1 -dimensional photonic band gap. The chalcogenide $As_{45}Se_{45}Te_{10}$ thin film was measured with the fact that it has a high refractive index (2.6~2.9). The $As_{45}Se_{45}Te_{10}$ and $MgF_{2}$ thin film, have a high refractive index and a low refractive index, it used a simulation and planed period 5-pairs structure, the result was from 500nm to 800nm. It will be able to confirm the characteristic which most of the incidence light reflects, the He-Ne (632.8nm) laser was irradiated in the thin film which stabilized the thin film. $As_{45}Se_{45}Te_{10}$ (high refractive index layer: H) and $MgF_{2}$ (low refractive index layer: L) results which plans the thin film with glass/LHLHLLHLHL/air structure, 632.8nm against transmitance, increased a lot. An application possibility with the filter against a specific wave length was confirmed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1271-1276
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• 2004

Two-dimensionally arrayed nanocolumn lattices were fabricated by using double-exposure laser holographic method. The hexagonal lattice was formed by rotating the sample with 60 degree while the square lattice by 90 degree before the second laser-exposure. The reactive ion etching for a typical time of 30 min using CH$_4$/H$_2$ plasma enhanced the aspect-ratio by more than 1.5 with a slight increase of the bottom width of columns. The etch-damage was observed by photoluminescence (PL) spectroscopy which was removed by the wet chemical etching using HBr/$H_2O$$_2$/$H_2O$ solution, leading into the enhanced PL intensities of the PCs.

• Journal of Integrative Natural Science
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• v.5 no.1
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• pp.27-31
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• 2012

Relationship between reflection resonance and applied current density in Bragg photonic crystal has been investigated. Multiple bit encodes of distributed Bragg reflector features have been prepared by electrochemical etching of crystalline silicon by using various square wave current densities. Optical characterization of multi-encoding of distributed Bragg reflectors on porous silicon was achieved by Ocean optics 2000 spectrometer for the search of possible applications of multiple bit encoding of distributed Bragg reflectors such as multiplexed assays and chemical sensors. The morphology and cross-sectional structure of multi-encoded distributed Bragg reflectors was investigated by field emission scanning electron micrograph.

• Current Optics and Photonics
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• v.6 no.1
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• pp.10-14
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• 2022

Low-threshold optical bistability is essential for practical nonlinear optical applications. Many bistable optical devices based on high-quality-factor resonators have been proposed to reduce the threshold intensity. However, demonstrating high-quality-factor resonance requires complex fabrication techniques. In this work, we numerically demonstrate optical bistability with bound states in the continuum in a simple one-dimensional Si photonic crystal. The designed structure supports bound states in the continuum, producing an ultrahigh quality factor without tough fabrication conditions. The threshold intensity of the designed device is 150 MW/cm² at the optical communication wavelength. This scheme may lead to a new class of nonlinear photonics.