• Korean Journal of Materials Research
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• v.8 no.6
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• pp.526-531
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• 1998

A hydride vapor phase epitaxy (HVPE) method was performed to grow the $10~240\mu{m}$ thick GaN films on (111) spinel $MgAl_2O_4$ substrate. The GaN films on $MgAl_2O_4$ substrate revealed a photoluminescence (PL) characteristics of the impurity doped GaN by the out-diffusion and auto-doping of Mg from $MgAl_2O_4$ substrate during GaN growth. The PL spectrum measured at 10K consists of free and bound excitons related recombination transitions and impurity-related donor-acceptor pair recombination and its phonon replicas. However, the deep-level related yellow band emission was not observed. The peak energy of neutral donor bound excitonic emission and the frequency of Raman $E_2$ mode were exponentially decreased with increasing the GaN thicknesses. and the frequency of E, Raman mode was shifted with the relation of $\Delta$$\omega$=3.93$\sigma$($cm^{-1}$/GPa), where l1 (GPa) is the residual strain in the GaN epilayers.

• Journal of Powder Materials
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• v.27 no.3
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• pp.233-240
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• 2020

Nano-sized ZnSe particles are successfully synthesized in an aqueous solution at room temperature using sodium borohydride (NaBH₄) and thioglycolic acid (TGA) as the reducing agent and stabilizer, respectively. The effects of the mass ratio of the reducing agent to Se, stabilizer concentration, and stirring time on the synthesis of the ZnSe nanoparticles are evaluated. The light absorption/emission properties of the synthesized nanoparticles are characterized using ultraviolet-visible (UV-vis) spectroscopy, photoluminescence (PL) spectroscopy, and particle size analyzer (PSA) techniques. At least one mass ratio (NaBH4/Se) of the reducing agent should be added to produce ZnSe nanoparticles finer than 10 nm and to absorb UV-vis light shorter than the ZnSe bulk absorption wavelength of 460 nm. As the ratio of the reducing agent increases, the absorption wavelengths in the UV-vis curves are blue-shifted. Stirring in the atmosphere acts as a deterrent to the reduction reaction and formation of nanoparticles, but if not stirred in the atmosphere, the result is on par with synthesis in a nitrogen atmosphere. The stabilizer, TGA, has an impact on the Zn precursor synthesis. The fabricated nanoparticles exhibit excellent photo-absorption/discharge characteristics, suggesting that ZnSe nanoparticles can be alloyed without the need for organic solutions or high-temperature environments.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.1
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• pp.33-37
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• 2013

In this research, we investigated the effect of mole concentration of precursor on morphological, structural and optical properties of ZnO nanorods. ZnO nanorods were hydrothermally grown on c-plane sapphire substrates in aqueous solution which contains zinc nitrate hexahydrate and hexamethylenetetramine at 90oC in the precursor range of 0.01 M to 0.025 M. With the increase of mole concentration, length and diameter of ZnO nanorods increased. In all the conditions, the growth direction of rods was longitudinally c-axis direction. From the strong emission peak at 380 nm of PL spectra at room temperature, we could confirm that the crystal quality of ZnO nanorods is good to emit radiative recombination spectra.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.27-32
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• 2008

Novel long persistent phosphors of $CaZrO_3:Er^{3+}$ have been synthesized by traditional solid state reaction method. The long persistent phosphor crystalline particles were characterized by the X-ray diffraction (XRD), photoluminescence spectrophotometer, thermoluminescence (TL) and luminance meter. The results reveal that the samples are composed of single $CaZrO_3$ phase. The broadband emission spectra of 446 nm peak and 550 nm peak was revealed by synthesized at high temperature in $N_2$ gas. Green long persistent phosphors have been observed in the sys_em for over 6 h after UV irradiation (254 nm). The main emission peak was ascribed to $Er^{3+}$ ions transition from $^5D_{5/2}{\rightarrow}^4F_{9/2},\;^2H_{12/2},\;^4S_{3/2}{\rightarrow}^4I_{13/2}\;and\;^2G_{9/2}{\rightarrow}^4I_{13/2}$, and the afterglow may be ascribed to the suitable trap centers in the $CaZrO_3$ host lattice.

• Bulletin of the Korean Chemical Society
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• v.31 no.10
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• pp.2849-2853
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• 2010

A method to improve the photocatalytic activity of titanium dioxide by modification with a sensitizer and a metal oxide is proposed. To achieve this goal, we used metal oxides as dopants. In particular, $CaWO_4$ and $Gd_2O_2S$:Tb were used because their 2.6 eV and 2.2 eV band gap energy and optical properties have a large positive effect on photocatalysis. The improvement in the photocatalytic activity of $TiO_2$ modified with $Gd_2O_2S$:Tb under ultraviolet light irradiation is described in a previous study. The present work focuses on the sensitization of metal oxide-modified $TiO_2$. Having observed the ultraviolet-visible absorption spectra of 3,4,9,10-Perylenetetracarboxylic diimide in the wide visible-light region from 400 nm to 650 nm and the broad peaks in its photoluminescence spectra at 695 nm and 717 nm, we decided to use this perylene dye to sensitize modified $TiO_2$ to enhance its activity as a visible-light harvesting photocatalyst. We also explored the positive effects thin-film surface changes stemming from ultraviolet pre-treatment have on photocatalytic activity. Finally, we subjected several metal oxide-modified $TiO_2$ products sensitized by the perylene dye to ultraviolet pre-treatment, obtaining the most active photocatalysts.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.144-144
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• 2008

Blue light emitting diode structures consisting of the InGaN/GaN multiple quantum wells were grown by metalorganic chemical vapor deposition at different growth temperatures for the p-GaN contact layers and the influence of growth temperature on the emission and microstructural properties was investigated. The I-V and electroluminescence measurements showed that the sample with a p-GaN layer grown at $1084^{\circ}C$ had a lower electrical turn-on voltage and series resistance, andenhanced output power despite the low photoluminescence intensity. Transmission electron microscopy (TEM) revealed that the intense electro luminescence was due to the formation of a p-GaN layer with an even distribution of Mg dopants, which was confirmed by TEM image contrast and strain evaluations. These results suggest that the growth temperature should be optimized carefully to ensurethe homogeneous distribution of Mg as well as the total Mg contents in the growth of the p-type layer.

• Bulletin of the Korean Chemical Society
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• v.34 no.1
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• pp.167-173
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• 2013

A series of highly efficient red phosphorescent heteroleptic iridium(III) complexes 1-6 containing two cyclometalating 2-(2,4-substitued phenyl)quinoxaline ligands and one chromophoric ancillary ligand were synthesized: (pqx)$_2Ir$(mprz) (1), (dmpqx)$_2Ir$(mprz) (2), (dfpqx)$_2Ir$(mprz) (3), (pqx)$_2Ir$(prz) (4), (dmpqx)$_2Ir$(prz) (5), (dfpqx)$_2Ir$(prz) (6), where pqx = 2-phenylquinoxaline, dfpqx = 2-(2,4-diflourophenyl)quinoxaline, dmpqx = 2-(2,4-dimethoxyphenyl)quinoxaline, prz = 2-pyrazinecarboxylate and mprz = 5-methyl-2-pyrazinecarboxylate. The absorption, emission, electrochemical and thermal properties of the complexes were evaluated for potential applications to organic light-emitting diodes (OLEDs). The structure of complex 2 was also determined by single-crystal X-ray diffraction analysis. Complex 2 exhibited distorted octahedral geometry around the iridium metal ion, for which 2-(2,4-dimethoxyphenyl)quinoxaline N atoms and C atoms of orthometalated phenyl groups are located at the mutual trans and cis-positions, respectively. The emission spectra of the complexes are governed largely by the nature of the cyclometalating ligand, and the phosphorescent peak wavelengths can be tuned from 588 to 630 nm with high quantum efficiencies of 0.64 to 0.86. Cyclic voltammetry revealed irreversible metal-centered oxidation with potentials in the range of 1.16 to 1.89 V as well as two quasi-reversible reduction waves with potentials ranging from -0.94 to -1.54 V due to the sequential addition of two electrons to the more electron-accepting heterocyclic portion of two distinctive cyclometalated C^N ligands.

• Journal of the Korean Chemical Society
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• v.57 no.5
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• pp.547-553
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• 2013

Zirconium oxide ($ZrO_2$) nano porous membranes were fabricated by electrochemical two-step anodization with an electropolished zirconium substrate in inorganic water-based and organic electrolyte systems containing small amounts of fluoride. Using two-step anodization and organic electrolytes, highly regular and ordered nanotubular $ZrO_2$ oxide layers can be compared with aqueous electrolytes. The morphology and size of the nano porous layers were characterized by FE-SEM (field emission scanning electron microscopy), XRD (X-ray diffraction), and EDS (energy dispersive spectroscopy). Luminescence properties were investigated by photoluminescence measurements.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1212-1217
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• 2004

Red organic electroluminescent (EL) devices based on tris(8-hydroxyquinorine aluminum) (Alq$_3$) doped with red emissive materials, 4-(dicyanomethylene)-2-t-butyl -6-(l,1,7,7-tetramethyljulolidyl-9-enyl)4H-pyran (DCJTB). poly(3-hexylthiophene) (P3HT). rubrene and 4-dicyanomethylene-2-methyl-6[2-(2,3.6.7-tetrahydro-lH,5H-benzo-[i,j]quinolizin-8yl)vinyl]-4H-pyran (DCM2) were fabricated for applying to the red light source, The photoluminescence (pL) intensities of red emissive materials doped in Alq$_3$ are limited by the concentration quenching with increasing the doping ratio and the doping concentration of DCJTB, DCM2, P3HT and rubrene measured at the maximum intensity showed 5, 1, 0.5 and 2 wt%, respectively. Time-resolved PL dynamic results showed that the PL lifetime of red emissive materials doped in Alq$_3$ were increased more than the value of material itself. It means that the efficient energy transfer occurred in the mixed state and Alq$_3$ is a suitable host materials for red emissive materials, The device which was used DCJTB as a dopant achieved the best result of the maximum luminance of 594 cd/$m^2$ at 15 V and showed the chromaticity coordinates of x=0,624, y=0,371.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.9
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• pp.546-551
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• 2016

$SrSnO_3:Tb^{3+}$ phosphor thin films were prepared on sapphire and quartz substrates in the growth temperature range of $100{\sim}400^{\circ}C$ by using the radio frequency magnetron sputtering deposition. The resulting $SrSnO_3:Tb^{3+}$ thin films were characterized by X-ray diffraction, scanning electron microscopy, ultraviolet-visible-infrared spectrophotometer, and photoluminescence spectrometer. The results indicated that the morphology, optical transmittance, band gap energy, and luminescence intensity of the phosphor thin films significantly depended on the growth temperature. All the thin films, regardless of the type of substrate, showed an amorphous behavior. As for the thin films deposited on sapphire substrate, the maximum crystallite size was obtained at a growth temperature of $400^{\circ}C$ and the strongest emission was green at 544 nm arising from the $^5D_4{\rightarrow}^7F_5$ transition of Tb3+. The average optical transmittance for all the thin films grown on sapphire and quartz substrates was decreased as the growth temperature increased from 100 to $400^{\circ}C$. The results suggest that the optimum growth temperatures for depositing highly-luminescent $SrSnO_3:Tb^{3+}$ phosphor thin films on sapphire and quartz substrates are 400 and $300^{\circ}C$, respectively.