• Journal of the Korean Vacuum Society
• /
• v.5 no.3
• /
• pp.206-212
• /
• 1996

$In_{1-x}Ga_xAs$ epitaxial layers were grown at 76 Torr by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Growth rate did not change much with growth temperature. Surface morphology of $In_{1-x}Ga_xAs$ epitaxial layer was affected by lattice mismatch, growth temperature and $AsH_3/(TMIn+TMGa)$ ratio. A high quality epilayer showed a full width at half maximum of 2.8 meV by photoluminescence measurement at 5K. The composition of the $In_{1-x}Ga_xAs$ was determined by the relative gas phase diffusion of TMIn and TMGa. Lattice mismatch and growth temperature were the most important variables that determine the electrical properties of $In_{1-x}Ga_xAs$ epitaxial layers. At optimized growth condition, it was possible to obtain a high quality $In_{1-x}Ga_xAs$ epilayers with a electron concentration as low as $8{\times}10^{14}/cm^3$ and an electron mobility as high as 11,000$\textrm{cm}^2$/Vsec at room temperature.

• Journal of the Korean Applied Science and Technology
• /
• v.24 no.3
• /
• pp.238-245
• /
• 2007

$Eu^{3+}$ doped $YGdO_3$ phosphors particles which have fine size and narrow size distribution with non aggregated uniform morphology were prepared by solvent evaporation method for the improvement of emission efficiency. Several parameters have been investigated in this study such as the influences of composition ratio of host materials, calcination temperature, amount of activator, surfactant, pH and flux on the photoluminescence intensity, particle size and dispersion. $Eu^{3+}$ doped $YGdO_3$ phosphor presented a strong narrow band emission peak at 612nm. The maximum emission intensity of$YGdO_3:Eu^{3+}$ occurred when $Eu^{3+}$ concentration is 3wt% under vacuum ultra violet excitation. Prepared phosphors were found to have small round-shaped particles about 150nm in size. The addition of PVA as a surfactant inhibits the grain growth and the agglomeration of particles efficiently by reducing the oxygen bridge bonds. As the pH reduces, PL intensity increase due to reducing the formation of oxygen bridge bonds. The particles prepared from solvent evaporation method with 5wt% LiCl were found to have 120% PL intensity compare to particles prepared without LiCl flux.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.14-14
• /
• 2006

Homoepitaxial growth of GaN on n-type GaN substrates was carried out by hydride vapor phase epitaxy (HVPE) method. This enables us to reduce or to eliminate the bowing of the GaN substrate caused by thermal mismatch. As a result, the two opposite crystal surfaces have been found to possess low dislocation density. The surface polarity of the homoepitaxially grown GaN was confirmed by both etching of the surface and conversion beam electron diffraction(CBED). The surface morphology and the photoluminescencemeasurement indicated that the surface properties of N-polar face of the homoepitaxlally grown GaN are quite different from the initial N-polar face of the heteroepitaxially grown GaN substrate Also, both surfaces of the GaN substrate were characterized by room temperature Double crystal X-ray diffraction (DCXRD) and photoluminescence measurement.

• Korean Journal of Materials Research
• /
• v.11 no.8
• /
• pp.636-640
• /
• 2001

In order to improve the optical Performance of green emitting phosphor for plasma display panel (PDP) application, the wet chemical method for preparing $Zn_{2-x}$ $SiO_4$:xMn (xi=0.02. 0.08) phosphor was designed. The spherical phosphor particles were obtained and the size can be between 0.5$\mu\textrm{m}$ and 2$\mu\textrm{m}$. The formation of phosphor, which had the willemite structure, was completed at relatively low temperature of 108$0^{\circ}C$. Also, photoluminescence Properties of the phosphors prepared were investigated under vacuum ultraviolet excitation. In particular, the emission intensity of Zn$_2$SiO$_4$:0.08Mn phosphor having the 1$\mu\textrm{m}$ of particle size was higher than that of commercial phosphor by 40%. The decay time of zinc silicate powder prepared as containing 8 mole% of manganese has been measured as 7.8ms.

• Journal of the Korean Vacuum Society
• /
• v.15 no.4
• /
• pp.427-433
• /
• 2006

We have fabricated nanodot arrays by using phase separated (PS- b- PMMA) diblock copolymer film and anodic aluminum oxide (AAO) membrane as templates with hexagonal arrays of cylindrical microdomains perpendicular to the substrate. Pulsed laser deposition technique was used to deposit various kinds of materials including Ag, Ni, ZnO, Si:Er, and Co/Pt onto Si substrates. The size and separation of nanodots correspond to those of the templates used, The density of nanodots was estimated to be $6{\times}10^{11}/cm^2$ and $1{\times}10^{10}/cm^2$ when the diblock copolymer and AAO were used, respectively. In particular, the optical properties of ZnO and Si: Er nanodot arrays were investigated and the strong photoluminescence at 380 nm and $1.54{\mu}m$ was observed from ZnO and Si:Er nanodot arrays, respectively.

• Journal of the Korean Vacuum Society
• /
• v.15 no.3
• /
• pp.301-307
• /
• 2006

We have investigated optical properties of p-modulation doped In(Ga)As quantum dots (QDs) on InP substrate with a comparison with the undoped QDs. Photoluminscence (PL) intensity of doped QDs at 10 K was about 10 times weaker than that of undoped QD sample. The decay time of doped QD sample at its PL peak, obtained from the time-resolved PL (TR-PL) experiment at 10 K, was very fast compared to that of undoped sample. We interpret that this fast decay time of the doped QD sample comes from the addition of non-radiative recombination paths, which are originated from the doping-related defects.

• Korean Journal of Materials Research
• /
• v.11 no.8
• /
• pp.363-363
• /
• 2001

In order to improve the optical Performance of green emitting phosphor for plasma display panel (PDP) application, the wet chemical method for preparing $Zn_{2-x}$ $SiO_4$:xMn (xi=0.02. 0.08) phosphor was designed. The spherical phosphor particles were obtained and the size can be between 0.5$\mu\textrm{m}$ and 2$\mu\textrm{m}$. The formation of phosphor, which had the willemite structure, was completed at relatively low temperature of 108$0^{\circ}C$. Also, photoluminescence Properties of the phosphors prepared were investigated under vacuum ultraviolet excitation. In particular, the emission intensity of Zn$_2$SiO$_4$:0.08Mn phosphor having the 1$\mu\textrm{m}$ of particle size was higher than that of commercial phosphor by 40%. The decay time of zinc silicate powder prepared as containing 8 mole% of manganese has been measured as 7.8ms.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.16 no.5
• /
• pp.181-188
• /
• 2006

Rutile single crystals grown by skull melting method were cut parallel and perpendicular to growth axis, and both sides of the cut wafers (${\phi}5.5mmx1.0mm$) were then polished to be mirror surfaces. The black wafers were changed into pale yellow color by annealing in air at 1200 and $1300^{\circ}C$ for $3{\sim}15\;and\;10{\sim}50$ hours, respectively. After annealing, structural and optical properties were examined by specific gravity (S.G), SEM-electron backscattered pattern (SEM-EBSP), X-ray diffraction (XRD), FT-IR transmittance spectra, laser Raman spectroscopy (LRS), photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS). These results are analyzed increase of weight in air, decrease of weight in water and specific gravity, shown secondary phase of needle shape, diffusion of oxygen ion and increase of $Ti^{3+}$. From the above results, we suggest that the skull melting method grown rutile single crystals contain defect centers such as $O_v,\;Ti^{3+},\;O_v-Ti^{3+}$ interstitials and $F^+-H^+$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.226-229
• /
• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68{\times}10^{-4}\;eV/K)T^2/(T+155K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• Bulletin of the Korean Chemical Society
• /
• v.32 no.2
• /
• pp.559-565
• /
• 2011

The following noble series of statistical copolymers, poly[(2-(3-thienyl)ethanol n-butoxycarbonylmethylurethane)-co-3-hexylthiophene] (PURET-co-P3HT), were synthesized by the chemical dehydrogenation method using anhydrous $FeCl_3$. The structure and electro-optical properties of these copolymers were characterized using $^1H$-NMR, UV-visible spectroscopy, elemental analysis, GPC, DSC, TGA, photoluminescence (PL), and cyclic voltammetry (CV). The statistical copolymers, PURET-co-P3HT (1:0, 2:1, 1:1, 1:2, 1:3), were soluble in common organic solvents and easily spin coated onto indium-tin oxide (ITO) coated glass substrates. Hybrid bulk heterojunction photovoltaic cells with an ITO/G-PEDOT/PURET-co-P3HT:PCBM:Ag nanowires/$TiO_x$/Al configuration were fabricated, and the photovoltaic cells using PURET-co-P3HT (1:2) showed the best photovoltaic performance compared with those using PURET-co-P3HT (1:0, 2:1, 1:1, 1:3). The optimal hybrid bulk heterojunction photovoltaic cell exhibits a power conversion efficiency (PCE) of 1.58% ($V_{oc}$ = 0.82 V, $J_{sc}$ = 5.58, FF = 0.35) with PURET-co-P3HT (1:2) measured by using an AM 1.5 G irradiation (100 mW/$cm^2$) on an Oriel Xenon solar simulator (Oriel 300 W).