• Korean Journal of Materials Research
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• v.29 no.6
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• pp.356-362
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• 2019

$BaSiO_3:RE^{3+}$ (RE = Sm or Eu) phosphor powders with different concentrations of activator ions are synthesized using the solid-state reaction method. The effects of the concentration of activator ions on the structural, photoluminescent, and morphological properties of the barium silicate phosphors are investigated. X-ray diffraction data reveals that the crystal structure of all the phosphors, regardless of the type and the concentration of the activator ions, is an orthorhombic system with a main (111) diffraction peak. The grain particles agglomerate together to form larger clusters with increasing concentrations of activator ions. The emission spectra of the $Sm^{3+}$-doped $BaSiO_3$ phosphors under excitation at 406 nm consist of an intense orange band at 604 nm and three weak bands centered at 567, 651, and 711 nm, respectively. As the concentration of $Sm^{3+}$ increases from 1 to 5 mol%, the intensities of all the emission bands gradually increase, reach maxima at 5 mol% of $Sm^{3+}$ ions, and then decrease significantly with further increases in the $Sm^{3+}$ concentration due to the concentration quenching phenomenon. For the $Eu^{3+}$-doped $BaSiO_3$ phosphors, a strong red emission band at 621 nm and several weak bands are observed. The optimal orange and red light emissions of the $BaSiO_3$ phosphors are obtained when the concentrations of $Sm^{3+}$ and $Eu^{3+}$ ions are 5 mol% and 15 mol%, respectively.

• Journal of the Korean institute of surface engineering
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• v.54 no.3
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• pp.112-118
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• 2021

Dy³⁺- and Eu³⁺-codoped BaWO₄ phosphors for white light-emitting diode were synthesized with different activator ions via a solid-state reaction process. The structural, morphological, and optical properties of the BaWO₄:Dy³⁺,Eu³⁺ phosphors were investigated as a function of Eu³⁺ concentration at a fixed concentration of Dy³⁺ ions. XRD patterns exhibited that all the synthesized phosphors had a tetragonal system, irrespective of the concentrations of Dy³⁺ and Eu³⁺ ions. The excitation spectra of the synthesized phosphors were composed of three intense bands centered at 251, 355, and 393 nm and several weak peaks. For the BaWO₄:Dy³⁺,Eu³⁺ phosphors synthesized with 1 mol% of Eu³⁺, the emission spectra under ultraviolet excitation at 393 nm showed two strong blue and yellow bands at 485 and 577 nm corresponding to the ⁴F_9/2⁶H_15/2 and ⁴F_9/2⁶H_13/2 transitions of Dy³⁺ ions, respectively and several weak bands in the range of 600-700 nm resulting from the 4f transitions of Eu³⁺ ions. As the concentration of Eu³⁺ ions increased, intensities of the blue and yellow emission bands gradually decreased while those of the red emissions increased rapidly and the energy transfer efficiency from Dy³⁺ to Eu³⁺ ions was 95.3% at 20 mol% of Eu³⁺. The optimum white light emission with x=0.363, y=0.357 CIE 1931 chromaticity coordinates was obtained for the sample doped with 5 mol% Dy³⁺ and 1 mol% of Eu³⁺.

• Journal of the Korean institute of surface engineering
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• v.55 no.2
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• pp.96-101
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• 2022

The effects of the growth temperature on the structural, optical, and morphological properties of BaWO₄:Sm³⁺ phosphor thin films were investigated. The BaWO₄:Sm³⁺ thin films were grown on quartz substrates at several growth temperatures by radio-frequency magnetron sputtering. All the thin films crystallized in a tetragonal structure with a main BaWO₄ (112) diffraction peak. The 830 nm-thick BaWO₄:Sm³⁺ thin films grown at 300 ℃ exhibited numerous polygon-shaped particles. The excitation spectra of BaWO₄:Sm³⁺ thin films consisted of a broad excitation band in the 200-270 nm with a maximum at 236 nm due to the O^2--Sm³⁺ charge transfer and two small bands peaked at 402 and 463 nm, respectively. Under 236 nm excitation, the BaWO₄:Sm³⁺ thin films showed an intense red emission peak at 641 nm due to the ⁴G_5/2→⁶H_9/2 transition of Sm³⁺, indicating that the Sm³⁺ ions occupied sites of non-inversion symmetry in the BaWO₄ host lattice. The highest emission intensity was observed for the thin film grown at 300 ℃, with a 51.8% transmittance and 5.09 eV bandgap. The average optical transmittance in the wavelength range of 500-1100 nm was increased from 53.2% at 200 ℃ to 60.8% after growing at 400 ℃. These results suggest that 300 ℃ is the optimum temperature for growing redemitting BaWO₄:Sm³⁺ thin films.

• Composites Research
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• v.35 no.4
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• pp.298-302
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• 2022

Owing to the superior optoelectronic properties, halide perovskites have emerged as next-generation materials for display application. In this study, we reported a novel route for CsPbBr₃ calcination into porous SiO₂ nanoparticles to overcome the stability issues of halide perovskite via a spatial confinement of crystal growth within SiO₂ pores. The resulting CsPbBr₃-SiO₂ nanoparticles exhibited the photoluminescence (PL) emission peak at 515 nm under optimal calcination condition. In several polar solvents, PL properties of CsPbBr₃-SiO₂ nanoparticles was maintained owing to the enclosed pores during calcination process, suggesting their promising application for display color conversion film.

• Advances in materials Research
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• v.12 no.3
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• pp.179-192
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• 2023

We have studied the structural and optical properties of the non-doped and Co 0.08 at.%, Co 0.02 at.%, and Co 0.11 at.% doped ZnO nanorods (NRs) synthesized using the simple low-temperature chemical bath deposition (CBD) method at 95℃ for 2 hours. The scanning electron microscope (SEM) images confirmed the morphology of the ZnO NRs are affected by Co incorporation. As observed, the Co 0.08 at.% doped ZnO NRs have a larger dimension with an average diameter of 153.4 nm. According to the International Centre for Diffraction Data (ICDD) number #00-036-1451, the x-ray diffraction (XRD) pattern of non-doped and Co-doped ZnO NRs with the preferred orientation of ZnO NRs in the (002) plane possess polycrystalline hexagonal wurtzite structure with the space group P63mc. Optical absorbance indicates the Co 0.08 at.% doped ZnO NRs have stronger and blueshift bandgap energy (3.104 ev). The room temperature photoluminescence (PL) spectra of ZnO NRs exhibited excitonicrelates ultraviolet (UV) and defect-related green band (GB) emissions. By calculating the UV/GB intensity, the Co 0.08 at.% is the proper atomic percentage to have fewer intrinsic defects. We predict that Co-doped ZnO NRs induce a blueshift of near band edge (NBE) emission due to the Burstein-Moss effect. Meanwhile, the redshift of NBE emission is attributed to the modification of the lattice dimensions and exchange energy.

• Journal of the Korean Chemical Society
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• v.67 no.4
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• pp.236-240
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• 2023

Non-concentration quenching EuGa₂S₄ and Eu₂Ga₂S₅ phosphors, in which the concentration of Eu²⁺ activator ion is 100%, were synthesized by a solid state reaction at temperature range from 800 to 1050 ℃. The wavelength of maximum intensity (λ_max) of EuGa₂S₄ and Eu₂Ga₂S₅ phosphors are 546 and 581 nm, respectively. An examination of the X-ray diffraction patterns and photoluminescent properties of EuGa₂S₄ and Eu₂Ga₂S₅ phosphors revealed that EuGa₂S₄ and Eu₂Ga₂S₅ phosphors were formed at lower temperature range (800~900 ℃) and higher temperature range (1000~1050 ℃), respectively.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.1
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• pp.1-10
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• 1999

InGaP epilayers were grown on the flat, $2^{\circ}$off, $6^{\circ}$ off, and $10^{\circ}$off GaAs substrates by organo-metallic vapor phase epitaxy, and influences of crystallographic misorientation of the substrate on the structural and optical properties such as lattice mismatch, elastic strain, lattice curvature, misfit stress, and PL intensity /line-width were investigated in this study. Material characterizations were carried out by TXRD( tripple-axis x-ray diffractometer) and low temperature (11K) PL (photoluminescence). With increase of the substrate misorientation angle (S.M.A.), the relative incorporation of Ga atoms on the substrate surface was found to be enhanced. Also, with increase of the S. M. A., the x-ray line-width of the InGaP epilayer was reduced, indicating that the crystal quality of the epilayer could be improved tilth a misoriented substrate. It was also found that the elastic accommodation of the strain-free lattice misfit was more remarkable in a misoriented sample. PL intensity increased, and PL line-width and emission wavelength decreased with the increase of S. M. A. The results conclude that the elastic characteristics and the crystal quality of the InGaP epilayer could be remarkably enhanced when the misoriented substrates were employed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.3
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• pp.113-116
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• 2010

We report on the growth and characteristics of the structural and optical properties of InGaN nano-structures doped with antimony (Sb) as a catalyst. The use of catalyst has been explored to modify the growth and defect generation during strained layer heteroepitaxial growth. We performed the growth of the InGaN nano-structures on c-sapphire substrates using mixed-source hydride vapor phase epitaxy (HVPE). The characteristic of samples was measured by scanning electron microscope (SEM) and photoluminescence (PL). The aligning direction of c-axis of the InGaN nano-structures was changed from vertical to parallel or inclined to the surface of substrates when the Sb was added as a catalyst. The indium composition was estimated about 3.2% in both cases of with or without the addition of Sb in the InxGal-xN structures. From the results of InGaN nano-structures formed with the addition of Sb, we can expect the performance of optical devices would be more improved by reduced piezo-electric field if we use the InGaN nano-structures of which c-axes are aligned parallel to the substrates as an active layer.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.2 s.344
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• pp.8-12
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• 2006

We have fabricated ZnO thin film on $Pt/TiO-2/SiO_2/Si$ substrate by the sol-gel method and have investigated the effect of annealing temperature on the structural morphology and optical properties of ZnO thin films. The ZnO thin film annealed at $600^{\circ}C$ exhibits the highest c-axis orientation and its FWHM of X-ray peak is $0.4360^{\circ}C$. In the results of surface morphology investigation of ZnO thin film by using Am it is observed that ZnO thin film annealed at $600^{\circ}C$ exhibits the largest UV (ultraviolet) exciton emission at around 378nm and the smallest visible emission at around 510nm among these of ZnO thin films annealed at various temperatures. It is deduced that the ZnO thim film annealed at $600^{\circ}C$ is formed most stoichiometrically since the visible emission at around 510nm comes from oxygen vacancy or impurities.

• Journal of the Korean Chemical Society
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• v.43 no.2
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• pp.206-212
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• 1999

The main objective of the present investigation is to improve the photoluminescent performance of existing $Zn_2SiO_4:Mn$ phosphors by introducing a new co-dopant. The co-doping effect of Mg and/or Cr upon emission intensity and decay time was studied in the present investigation. The co-dopants incorporated into the $Zn_2SiO_4:Mn$ phosphors are believed to alter the internal energy state so that the change in emission intensity and decay time can be expected. Both Mg and Cr ions have a favourable influence on photoluminescence prpperties, for example, the Mg ion enhances the intensity of manganese green emission and the Cr ion shortens the decay time. The enhancement in emission intensity of $Zn_2SiO_4:Mn,\;Mg$ phosphors was interpreted by taking into account the result from the DV-X${\alpha}$ embedded cluster calculation. On the other hand, the energy transfer between Mn and Cr ions was found to be responsible for the shortening of decay time in$Zn_2SiO_4:Mn,\;Cr$ phosphors.