• Korean Journal of Materials Research
• /
• v.24 no.11
• /
• pp.599-603
• /
• 2014

$NaLa_{1-x}(MoO_4)_2:Eu^{3+}/Yb^3$ phosphors with doping concentrations of $Eu^{3+}$ and $Yb^{3+}$ ($x= Eu^{3+}+Yb^{3+}$, $Eu^{3+}=0.05$, 0.1, 0.2 and $Yb^{3+}= 0.2$, 0.45) were successfully synthesized by the microwave-modified sol-gel method, and the upconversion and spectroscopic properties were investigated. Well-crystallized particles showed a fine and homogeneous morphology with particle sizes of $2-5{\mu}m$. Under excitation at 980 nm, $NaLa_{0.5}(MoO_4)_2:Eu_{0.05}Yb_{0.45}$ particles exhibited a strong 525-nm emission band and a weak 550-nm emission band in the green region, and a very weak 665-nm emission band in the red region. The strong 525-nm emission in the green region corresponds to the $^7F_1{\rightarrow}^5D_1$ transition and the weak 550-nm emission in the green region corresponds to the $^7F_0{\rightarrow}^5D_2$ transition, while the very weak emission 665-nm band in the red region corresponds to the $^5D_0{\rightarrow}^7F_3$ transition. The Raman spectra of the doped particles indicated the domination of strong peaks at higher frequencies of 762, 890, 1358 and $1430cm^{-1}$ and weak peaks at lower frequencies of 323, 388 and $450cm^{-1}$ induced by the disorder of the $[MoO4]^{2-}$ groups with the incorporation of the $Eu^{3+}$ and $Yb^{3+}$ elements into the crystal lattice or by a new phase formation.

• Bulletin of the Korean Chemical Society
• /
• v.26 no.12
• /
• pp.1969-1974
• /
• 2005

Composite systems of $Eu(phen)_2Cl_3{(H_2O)}_2$, Eu(DN-bpy)$(phen)Cl_3{(H_2O)}_2$ and Eu(DB-bpy)$(phen)Cl_3{(H_2O)}_2$ (DNbpy: $4,4^\prime$-Dinonyl-$2,2^\prime$-dipyridyl; DB-bpy: $4,4^\prime$-Di-tert-butyl-$2,2^\prime$-dipyridyl) with crown ethers of Benzo-15-crown-5 (B15C5), Benzo-18-crown-6 (B18C6), 18-crown-6 (18C6), Dibenzo-18-crown-6 (DB18C6) and Dibenzo-24-crown-8 (DB24C8) were fabricated successfully and characterized by using photoluminescent spectroscopy and luminescent lifetime measurements. All composites formed show high luminescence mainly in red region. It was found that the heterocyclic ligands such as phen, DN-bpy and DB-bpy as well as the crown ethers have great influences on the photoluminescent properties of $Eu^{3+}$ ion. The environment around $Eu^{3+}$ ion in the composite systems changes greatly,presumably the variation of the first coordination sphere. The $Eu^{3+}$ ion occupies higher symmetrical environment and in more than one kind of symmetrical site in the composite systems studied in this work.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.23 no.4
• /
• pp.195-200
• /
• 2013

Novel Sr-Y-Si-Oxynitride yellow phosphors were synthesized and the effect of calcination temperature, reduction temperature and $Eu^{2+}$ concentration on their luminescence properties were studied. Optimal temperature conditions were found to be $1400^{\circ}C$ and $1300^{\circ}C$ for solid-state reaction and reduction, respectively. The synthesized $Ba_9Y_{2+y}Si_6O_{24-3y}N_{3y}:Eu^{2+}$ phosphors showed a single intense broadband emission in the range of 571~587 nm for 450 nm excitation light source. The highest luminescence intensity was obtained with Eu concentration of 3 mol% and concentration quenching was observed beyond 5 mol%. FE-SEM and PSA showed that the synthesized phosphors consists of particles with an average size of ${\sim}8.2{\mu}m$.

• Korean Journal of Materials Research
• /
• v.22 no.3
• /
• pp.145-149
• /
• 2012

Red phosphors of $Gd_{1-x}Al_3(BO_3)_4:{Eu_x}^{3+}$ were synthesized by using the solid-state reaction method. The phase structure and morphology of the phosphors were measured using X-ray diffraction (XRD) and field emission-scanning electron microscopy (FE-SEM), respectively. The optical properties of $GdAl_3(BO_3)_4:Eu^{3+}$ phosphors with concentrations of $Eu^{3+}$ ions of 0, 0.05, 0.10, 0.15, and 0.20 mol were investigated at room temperature. The crystals were hexagonal with a rhombohedral lattice. The excitation spectra of all the phosphors, irrespective of the $Eu^{3+}$ concentrations, were composed of a broad band centered at 265 nm and a narrow band having peak at 274 nm. As for the emission spectra, the peak wavelength was 613 nm under a 274 nm ultraviolet excitation. The intensity ratio of the red emission transition ($^5D_0{\rightarrow}^7F_2$) to orange ($^5D_0{\rightarrow}^7F_1$) shows that the $Eu^{3+}$ ions occupy sites of no inversion symmetry in the host. In conclusion, the optimum doping concentration of $Eu^{3+}$ ions for preparing $GdAl_3(BO_3)_4:Eu^{3+}$ phosphors was found to be 0.15 mol.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.337-337
• /
• 2013

ZnO seed layers were deposited on a quartz substrate using the sol-gel method, and B-doped ZnO (BZO) nanorods with different B concentrations ranging from 0 to 2.5 at.% were grown on the ZnO seed layers by the hydrothermal method. The structural, optical, electrical propertiesof the ZnO and BZO nanorods were investigated using field-emission scanning electron microscopy, X-ray diffraction (XRD), photoluminescence (PL), ultraviolet-visible spectroscopy, and hall effect. The ZnO and BZO nanorods grew well aligned on the surface of the quartz substrates. From the XRD data, it can be seen that the B doping is responsible for the distortion of the ZnO lattice. The PL spectra show near-band-edge emission and deep-level emission, and they also show that B doping significantly affects the PL properties of ZnO nanorods. The optical band gaps are changed by B doping, and thus the Urbach energy value changed with the optical band gap of the ZnO nanorods. From the hall measurements, it can be observed that the values of electrical resistivity, carrier concentration, and mobility are changed by B doping.

• Korean Journal of Materials Research
• /
• v.21 no.1
• /
• pp.34-38
• /
• 2011

In this study, the effects of an annealed buffer layer with different thickness on heterojunction diodes based on the ZnO/ZnO/p-Si(111) systems were reported. The effects of an annealed buffer layer with different thickness on the structural, optical, and electrical properties of zinc oxide (ZnO) films on p-Si(111) were also studied. Before zinc oxide (ZnO) deposition, different thicknesses of ZnO buffer layer, 10 nm, 30 nm, 50 nm and 70 nm, were grown on p-Si(111) substrates using a radio-frequency sputtering system; samples were subsequently annealed at $700^{\circ}C$ for 10 minutes in $N_2$ in a horizontal thermal furnace. Zinc oxide (ZnO) films with a width of 280nm were also deposited using a radio-frequency sputtering system on the annealed ZnO/p-Si (111) substrates at room temperature; samples were subsequently annealed at $700^{\circ}C$ for 30 minutes in $N_2$. In this experiment, the structural and optical properties of ZnO thin films were studied by XRD (X-ray diffraction), and room temperature PL (photoluminescence) measurements, respectively. Current-voltage (I-V) characteristics were measured with a semiconductor parameter analyzer. The thermal tensile stress was found to decrease with increasing buffer layer thickness. Among the ZnO/ZnO/p-Si(111) diodes fabricated in this study, the sample that was formed with the condition of a 50 nm thick ZnO buffer layer showed a strong c-axis preferred orientation and I-V characteristics suitable for a heterojunction diode.

• Korean Journal of Materials Research
• /
• v.26 no.10
• /
• pp.577-582
• /
• 2016

$Dy^{3+}$ and $Eu^{3+}$-codoped $SrWO_4$ phosphor thin films were deposited on sapphire substrates by radio frequency magnetron sputtering by changing the growth and thermal annealing temperatures. The results show that the structural and optical properties of the phosphor thin films depended on the growth and thermal annealing temperatures. All the phosphor thin films, irrespective of the growth or the thermal annealing temperatures, exhibited tetragonal structures with a dominant (112) diffraction peak. The thin films deposited at a growth temperature of $100^{\circ}C$ and a thermal annealing temperature of $650^{\circ}C$ showed average transmittances of 87.5% and 88.4% in the wavelength range of 500-1100 nm and band gap energy values of 4.00 and 4.20 eV, respectively. The excitation spectra of the phosphor thin films showed a broad charge transfer band that peaked at 234 nm, which is in the range of 200-270 nm. The emission spectra under ultraviolet excitation at 234 nm showed an intense emission peak at 572 nm and several weaker bands at 479, 612, 660, and 758 nm. These results suggest that the $SrWO_4$: $Dy^{3+}$, $Eu^{3+}$ thin films can be used as white light emitting materials suitable for applications in display and solid-state lighting.

• Journal of the Korean Vacuum Society
• /
• v.21 no.2
• /
• pp.93-98
• /
• 2012

$Gd_{1-x}VO_4:{Eu_x}^{3+}$ phosphor powders were synthesized with changing the concentration of $Sm^{3+}$ ion by using a solid-state reaction method. The crystal structures of all the phosphors were found to be a tetragonal system, composed of (200) diffraction peak centered at $24.76^{\circ}$, and the morphology of grains approached the spherical form with homeogenous size distribution when the concentration of $Sm^{3+}$ ion was 0.05 mol. As for the photoluminescence properties, all of the phosphor powders, irrespective of $Sm^{3+}$ ion concentration, indicated the yellow, orange, and red emission peaked at 565, 603, and 645 nm respectively. As the concentration of $Sm^{3+}$ ion increases, the intensity of excitation spectrum showed a decreasing tendency on the increase of Sm3+ ion concentration. The maximum excitation and emission spectra were observed and the symmetry ratio was 1.19 at 0.05 mol of $Sm^{3+}$ ion.

• Korean Journal of Materials Research
• /
• v.8 no.7
• /
• pp.601-606
• /
• 1998

The $SrTi0_3$:Al, Pr red phosphors were prepared by solid state reaction method. Phosphor preparation parameters such as sintering temperature and time were optimized for the photoluminescence(PU intensity and the cathodoluminescence(CL) intensity. Powder samples showed the characteristic X-ray diffraction patterns of the perovskite structure and the average particle size of 3~5/$\mu\textrm{m}$ for particle size distribution(PSD) analysis. Also, scanning electron microscopy for the powder samples showed that the particles are reasonably crystallized with spherical shape. Especially, higher low voltage CL properties of $SrTi0_3$:Al, Pr phosphors than commercial $Y_2O_3$:Eu phosphors are expected to be applied for a low voltage field emission display(FED).

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.19 no.4
• /
• pp.196-201
• /
• 2009

In order to give emission functionality for laponite the laponite-X (x = Eu, Tb) phosphors were prepared by calcination of cryogels which were prepared through Na ion exchange reaction with Eu and Tb ions. Thermal stability and emission properties of new laponite-X (X = Eu, Tb) phosphors were investigated by X-ray diffractormeter and UV/VUV spectrofluorometer. The phosphors were stable around up to $600^{\circ}C$ and new crystalline phases were observed at $700^{\circ}C$. Red and green emissions of phosphors under UV/VUV excitation were also identified at $300^{\circ}C$ and $500^{\circ}C$ as emission peaks of $Eu^{3+}$ and $Tb^{3+}$, respectively.