• 한국재료학회지
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• 제24권7호
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• pp.339-343
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• 2014

$CaWO_4:Sm_x$(x = 0, 0.5, 1.0, 1.5, 2.0 mol%) white phosphors with different concentrations of $Sm^{3+}$ ions were synthesized using the hydrothermal method. The crystal structure, surface, and optical properties of the $CaWO_4:Sm_x$ phosphors were investigated using X-ray diffraction(XRD), field-emission scanning electron microscopy(FE-SEM), photoluminescence(PL) and photoluminescence excitation(PLE). From the XRD results, the crystal structure of the $CaWO_4:Sm$ phosphors was found to be tetragonal. The $CaWO_4:Sm$ phosphors became more cohesive with increasing $Sm^{3+}$-ion concentration. The photoluminescence excitation(PLE) peak of the phosphors, at around 250 nm, was ascribed to the transition from the 1A1 ground-state to the high-vibration level of 1T2 in the $WO{_4}^{2-}$ complex. The maximum emission spectra of the phosphors were observed when the $Sm^{3+}$ concentration was 0.5 mol%. The luminescence intensity of the $CaWO_4$ phosphors was decreased for $Sm^{3+}$ concentrations greater than 0.5 mol%.

• 한국광학회지
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• 제8권3호
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• pp.213-217
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• 1997

n형과 p형 GaAs의 도핑에 따른 형광과 시간 분해 형광특성을 조사하였다. 도핑의 농도가 증가할수록 형광의 피크 위치는 p형은 낮은 에너지 쪽으로, n형은 높은 에너지 쪽으로 이동함을 관찰하였다. 이것은 p형은 띠간격 좁아짐 효과가 우세하게 작용하며, n형은 Burstein-Moss효과가 지배적으로 작용하기 때문인 것으로 해석된다. 또한, 도핑의 농도가 증가하면 형광의 소멸시간과 상승시간이 감소하며, p형의 형광소멸시간과 상승시간이 n형보다 더 빠르게 나타났다. 따라서 도핑된 GaAs에서 형광소멸시간과 상승시간은 다수 운반자의 종류와 농도에 의존함을 알 수 있으며, 운반자-운반자 상호작용이 에너지 이완 과정에 중요한 역할을 함을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.124-127
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• 2003

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnance. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at $630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is $2.1{\mu}m$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition ($E_x$) observable only in high quality crystal and neutral bound excition ($D^{\circ}$,X) having very strong peak intensity. And, the full width at half maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.418-419
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• 2006

We investigate the influence of the ambient gas during thermal annealing on the photoluminescence (PL) properties of europium-silicate thin films. The films were fabricated on substrates by using a radio-frequency magnetron sputtering method and subsequent rapid thermal annealing (RTA). The mechanism for the formation of the europium silicates during the annealing process was investigated by using X-ray diffraction (XRD) spectroscopy, Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). A series of narrow PL spectra from $Eu^{3+}$ ions was observed from the film annealed in $O_2$ ambient. Broad PL spectra associated with $Eu^{2+}$ ions, with a maximum intensity at 600 nm and a FWHM of 110 nm, were observed from the thin film annealed at $1000^{\circ}C$ in $N_2$ ambient.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.202.1-202.1
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• 2013

ZnO nanostructure was fabricated on a Si substrate using two-step growth. The seed layer was grown on the Si substrate by a sol-gel spin-coating. In the first step, ZnO nanorods were grown by a hydrothermal method at $140^{\circ}C$ for 5 min. In the second step, a ZnO thin film was grown on the ZnO nanorods by spin-coating. After growth, these films were annealed at $800^{\circ}C$ for 10 min. Electrical and optical properties of ZnO nanostructures have modified by plasma-assisted molecular beam epitaxy (PA-MBE) regrowth. The carrier concentration and resistivity increased by PA-MBE regrowth. In the photoluminescence, the full width at half maximum and intensity were decreased and increased, respectively, by PA-MBE regrowth.

• Applied Science and Convergence Technology
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• 제27권5호
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• pp.109-112
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• 2018

Optical properties of InAs/GaAs submonolayer-quantum dot (SML-QD) have been investigated using excitation intensity ($I_{ex}$)- and temperature-dependent photoluminescence (PL). At a low temperature (13 K) strong PL was observed at 1.420 eV with a very narrow full-width at half maximum, of 7.09 meV. The results of the $I_{ex}$ dependence show that the PL intensities increase with increasing $I_{ex}$. The enhancement factors (k) of PL increment as a function of $I_{ex}$ are 3.3 and 1.22 at low and high $I_{ex}$ regime, respectively. The high k value at low $I_{ex}$, implies that the activation energy of the SML-QDs is low. The calculated activation energy of the SML-QDs from temperature dependence is 30 meV.

• Current Optics and Photonics
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• 제5권2호
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• pp.173-179
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• 2021

The electroluminescence (EL) intensities of GaN-based light-emitting diodes (LEDs) are estimated based on their photoluminescence (PL) properties. The PL intensity obtained under open-circuit conditions is divided into two parts: the PL intensity under a forward bias lower than the optical turn-on voltage, and the difference between the PL intensities under open-circuit conditions and under forward bias. The luminescence induced by photoexcitation under a constant forward bias lower than the optical turn-on voltage is primarily the PL from the excited area of the LED. In contrast the intensity difference, obtained by subtracting the PL intensity under the forward bias from that under open-circuit conditions, contains the EL induced by the photocarriers generated during photoexcitation. In addition, a reverse photocurrent is generated during photoexcitation under constant forward bias across the LED, and can be correlated with the PL-intensity difference. The relationship between the photocurrent and PL-intensity difference matches well the relationship between the injection current and EL intensity of LEDs. The ratio between the photocurrent generated under a bias and the short-circuit current is related to the ratio between the PL-intensity difference and the PL intensity under open-circuit conditions. A relational expression consisting of the ratios, short-circuit current, and PL under open-circuit conditions is proposed to estimate the EL intensity.

• 한국재료학회지
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• 제31권10호
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• pp.582-585
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• 2021

Y₂O₃:Eu_x (x = 0.005, 0.01, 0.02, 0.03, 0.05, 0.1 mol) phosphors are synthesized with different concentrations of Eu³⁺ ions by solvothermal method. The crystal structure, surface and optical properties of the Eu doped Y₂O₃ phosphors are investigated using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and photoluminescence (PL) and photoluminescence excitation (PLE) analyses. From X-ray diffraction (XRD) results, the crystal structure of the Eu doped Y₂O₃ phosphor is found to be cubic. The maximum emission spectra of the Eu doped Y₂O₃ phosphors are observed at 0.05 mol Eu³⁺ concentration. The photoluminescence of 615 nm in the Eu doped Y₂O₃ phosphors is associated with ⁵D₀ → ⁷F₂ transition of Eu³⁺ ions. The decrease in emission intensity of 0.1 mol Eu doped Y₂O₃ is interpreted by concentration quenching. The International Commission on Illumination (CIE) coordinates of 0.05 mol Eu doped Y₂O₃ phosphor are X = 0.6547, Y = 0.3374.

• 한국진공학회지
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• 제22권6호
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• pp.321-326
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• 2013

디지털 합금(digital alloy) InGaAlAs 다중 양자 우물(multiple quantum wells: MQWs) 구조의 열처리(rapid thermal annealing: RTA) 온도에 따른 발광 특성을 PL (photoluminescence)와 TRPL (time-resolved PL)를 이용하여 분석하였다. $700^{\circ}C$에서 $850^{\circ}C$까지 온도를 변화시켜 RTA한 디지털 합금 MQWs의 PL 결과는 $750^{\circ}C$에서 RTA한 시료가 가장 강한 PL 세기와 가장 좁은 반치폭을 나타내었다. 이것은 $750^{\circ}C$에서 30초 동안 RTA하였을 때 비발광 재결합 센터가 감소하고 가장 매끄러운 경계면이 형성되는 것을 나타낸다. RTA 온도를 $800^{\circ}C$와 $850^{\circ}C$로 증가하였을 때 PL 피크는 청색편이 하였으며 PL 세기는 감소하였다. PL 피크의 청색편이는 RTA 온도가 증가함에 따라 InGaAs/InAlAs SPS (short-period superlattice)의 경계면에서의 Ga과 Al의 혼합(intermixing)으로 Al 함량이 증가한 것으로 설명되며, PL 세기의 감소는 경계면의 거칠기의 증가와 인듐의 상분리(phase separation)로 인한 비균일 조성(compositional fluctuation)으로 설명된다. RTA 온도를 증가하였을 때 PL 소멸시간은 증가하였으며, 이것은 비발광 재결합 센터(결정 결함)가 감소한 것을 나타낸다. 디지털 합금 InGaAlAs MQWs 시료의 PL 특성은 적절한 RTA 조건에서 현저히 향상되는 것을 확인하였다.

• 한국진공학회지
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• 제21권6호
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• pp.342-347
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• 2012

Migration-enhanced molecular beam epitaxy법을 이용하여 GaAs 기판에 성장한 InAs 양자점(quantum dots: QDs)의 광학적 특성을 PL (photoluminescence)과 time-resolved PL을 이용하여 분석하였다. 시료 온도, 여기 광의 세기, 발광 파장에 따른 InAs/GaAs QDs (QD1)과 $In_{0.15}Ga_{0.85}As$ 캡층을 성장한 InAs/GaAs QDs (QD2)의 발광특성을 연구하였다. QD2의 PL 피크는 QD1의 PL 피크보다 장파장에서 나타났으며, 이것은 InGaAs 캡층의 In이 InAs 양자점으로 확산되어 양자점의 크기가 증가한 것으로 설명된다. 10 K에서 측정한 QD1과 QD2의 PL 피크인 1,117 nm와 1,197 nm에서 PL 소멸시간은 각각 1.12 ns와 1.00 ns이고, 발광파장에 따른 PL 소멸시간은 PL 피크 근처에서 거의 일정하게 나타났다. QD2의 PL 소멸시간이 QD1보다 짧은 것은 QD2의 양자점이 커서 파동함수 중첩이 향상되어 캐리어 재결합이 증가한 때문으로 설명된다.