• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.532-534
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• 2000

Si thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was varied from 1 to 3 Torr. After deposition, Si thin film has been annealed again at nitrogen ambient. Strong violet-indigo photoluminescence have been observed from Si thin film annealed in nitrogen ambient gas. As increasing environmental gas pressure, weak green and red emissions from annealed Si thin films also observed by photoluminescence.

• 대한금속재료학회지
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• 제49권9호
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• pp.732-738
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• 2011

Silicon oxide thin films were deposited by using a plasma-enhanced chemical-vapor deposition technique to investigate the light emission properties. The photoluminescence characteristics were divided into two categories along the relative ratio of the flow rates of $SiH_4$ and $N_2O$ source gases, which show light emission in the broad/visible range and a light emission peak at 380 nm. We attribute the broad/visible light emission and the light emission peak to the quantum confinement effect of nanocrystalline silicon and the Si=O defects, respectively. Changes in the photoluminescence spectra were observed after the post-annealing processes. The photoluminescence spectra of the broad light emission in the visible range shifted to the long wavelength and were saturated above an annealing temperature of $900^{\circ}C$ or after 1 hour annealing at $970^{\circ}C$. However, the position of the light emission peak at 380 nm did not change at all after the post-annealing processes. The light emission intensities at 380 nm initially increased, and decreased at annealing temperatures above $700^{\circ}C$ or after 1 hour annealing at $700^{\circ}C$. The photoluminescence behaviors after the annealing processes can be explained bythe size change of the nanocrystalline silicon and the density change of Si=O defect in the films, respectively. These results support the possibility of using a silicon-based light source for Si-optoelectronic integrated circuits and/or display devices.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.717-720
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• 2005

Nanocrystalline $GdBO_3:Eu^{3+}$ was prepared by a hydrothermal method. The as-synthesized powders were spherical shaped agglomerates of nano particles. The luminescent properties were compared with samples synthesized by conventional solid-state reaction method. Both the photoluminescence intensity and chromaticity were improved and a red-shift in the CT band was observed for the hydrothermally synthesized samples.

• Bulletin of the Korean Chemical Society
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• 제31권8호
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• pp.2368-2370
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• 2010

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.1030-1033
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• 2002

ZnO thin films on (100)p-type silicon substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YGA laser with a wavelength of 266nm. The influence of the deposition parameters, such as oxygen pressure, substrate temperature and laser energy density variation on the properties of the grown film, was studied. The experiments were performed for substrate temperatures in the range of $200{\sim}500^{\circ}C$ and oxygen pressure in the range of $10^{-2}{\sim}10^2mTorr$. We investigated the structural, morphological and optical properties of ZnO thin films using X-ray diffraction(XRD), atomic force microscopy(AFM), photoluminescence(PL).

• 한국전기전자재료학회논문지
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• 제18권9호
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• pp.846-850
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• 2005

[ $SrTiO_3$ ]:Al, Pr red phosphors for FED were synthesized by solid state reaction method. The dependence of their luminescent properties on Sr and Al concentration was investigated. The $SrTiO_3$: Al, Pr phosphors showed the characteristic X-ray diffraction patterns of the perovskite structure. Photoluminescence intensity and lattice constant in $SrTiO_3$: Al, Pr phosphors changed in quite a similar manner with Sr concentration. Photoluminescence intensity increased with increasing lattice constant, and the decrease of photoluminescence intensity and lattice constant occurred in the vicinity of 1 mol Sr concentration.

• 한국전기전자재료학회논문지
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• 제22권9호
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• pp.756-759
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• 2009

We described the growth of undoped ZnO thin films and their optical properties changing with a various growth temperature. The undoped ZnO thin films were grown on $c-Al_2O_3$ substrates using pulsed laser deposition (PLD) at room temperature, 200, 400, and $600^{\circ}C$, respectively. Field emission microscopy (FE-SEM) measurements showed that the grain size of undoped ZnO thin films are increasing as a increase of growth temperature. In addition, we were investigated that the structural and optical properties of undoped ZnO thin films by x-ray diffraction (XRD) and photoluminescence (PL) studied. Also, we could confirmed that the exciton luminescence was strongly related to charge trap by grain boundary of the samples using micro-PL measurement.

• Bulletin of the Korean Chemical Society
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• 제16권2호
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• pp.126-129
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• 1995

Linear and nonlinear optical properties of CuCl nanocrystals in silica glass have been studied using low temperature absorption, degenerate four wave mixing (DFWM), and time-resolved photoluminescence spectroscopy. Assuming a spherical shape, effective radius of the CuCl quantum dots was estimated to be 2.5 nm, which is obtained from low temperature absorption data. The DFWM experiment was performed in 380-386 nm wavelength region, and the diffracted signal was measured as a function of wavelength with 1.0 nm interval. Time-resolved photoluminescence measurement was also carried out at 77 K to obtain the time response of CuCl nanocrystals. The experimental results on the large third order nonlinear optical of CuCl quantum dots are explained in terms of crystal size and oscillator strength of quantum spheres.

• 한국표면공학회지
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• 제52권2호
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• pp.90-95
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• 2019

Methylammonium lead bromide ($MAPbBr_3$) has attracted a lot of attention due to their excellent optoelectronic properties such as the compositional flexibility relevant to photoluminescence (PL) and UV-Vis absorbance spectrum, high diffusion length, and photoluminescence quantum yield (PLQY). Despite such advantages of organic-inorganic perovskite materials, more systematic study on manipulation of their optoelectronic properties in homo- or heterovalent metal ions doped halide perovskite nanocrystals is lacking. In this study, we systematically investigated the optical properties of colloidal $CH_3NH_3Pb_{1-x}Sn_xCl_{2x}Br_{3-2x}$ particles by addition of $SnCl_2$ into the typical methylammonium lead tribromide ($CH_3NH_3PbBr_3$) precursor solution. We found that only 1% addition of $SnCl_2$ shows a significant blue-shift from 540 nm to 420 nm in UV-Vis absorbance spectrum due to the strong quantum confinement effect. Furthermore, continuous blue-shift in photoluminescence spectra was observed as the amount of Cl increases. These experimental results provide new insights into the replacement of Pb within $MAPbBr_3$, required for the broadening of their application.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.25.2-25.2
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• 2009

Vertically aligned zinc oxide(ZnO) nanorods (NRs) with different surface morphology were grown by metal organic chemical vapor deposition (MOCVD) on sapphire substrate with different deposition condition. Based on the surface morphology, ZnO nanostructures are divided into three types: nanoneedles, nanonails and nanorods with rounded tip. Variable temperature photoluminescence (PL) have employed to probe the exciton recombination in high density and vertically aligned ZnO Nanorod arrays. Low temperature photoluminescence measurements do not show any significant yellow emission, but the near band edge excitonic emission shows very strong dependence with the surface morphology. The recombination properties are expected to be different due to different surface-to-volume ratio and distribution of potential fluctuations of intrinsic defects.