• Bulletin of the Korean Chemical Society
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• v.33 no.2
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• pp.657-662
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• 2012

Mercaptoacetic acid (MAA) and mercaptopropionic acid (MPA) capped ZnS:Mn nanocrystals were synthesized and their physical characteristics were examined by XRD, HR-TEM, EDXS, and FT-IR spectroscopy. The optical properties of the MPA capped ZnS:Mn nanocrystals dispersed in aqueous solution were also measured by UV/Vis and solution photoluminescence (PL) spectra, which showed a broad emission peak around 598 nm (orange light emissions) with calculated relative PL efficiency of 5.2%. Comparative toxicity evaluation of the uncoordinated ligands, MAA and MPA, with the corresponding ZnS:Mn nanocrystals revealed that the original ligands significantly suppressed the growth of wild type E. coli whereas the ligandcapped nanocrystals did not show significant toxic effects. The reduced cytotoxicity of the conjugated ZnS:Mn nanocrystals was also observed in NIH/3T3 mouse embryonic fibroblasts. These results imply that potential toxicities of the capping ligands can be neutralized on ZnS:Mn surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.240-240
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• 2016

반도체 양자점은 불연속적인 에너지준위의 특성 때문에 고전적인 빛과는 다른 단일광자를 방출하여 양자정보 처리과정에 기본 요소로써 사용 될 수 있다. III-Nitride (III-N) 반도체 물질은 III족 원소의 구성비를 조절하였을 때 밴드갭 에너지차이가 크므로 깊은 양자 우물을 만들 수 있으며 최근에는 기존에 연구되던 III-Arsenide 기반의 반도체 양자점과 다르게 상온 (300 K) 동작 가능한 단일광자 방출원이 개발되었다.[1] 또한 약한 split-off 에너지 때문에 양자점 모양에 작은 비대칭성만 존재해도 큰 선형편광도를 가질 수 있다. 하지만 III-N 반도체 양자점의 이러한 특성에도 불구하고 이종기판과의 격자상수 불일치에 따른 많은 threading dislocation, 압전효과에 의한 큰 내부전기장에 의해 발광 효율이 떨어지는 등의 문제가 있다. 이를 해결하기 위해 반도체 양자점을 3차원 구조체와 결합하여 threading dislocation 및 내부전기장을 줄이는 연구들이 진행되고 있다.[2] 본 연구에서는 선택적 영역 성장 방식을 통해 마이크로미터 크기를 가지는 피라미드 형태의 3차원 구조체를 이용, 피라미드의 꼭지점에 형성된 InGaN/GaN 양자점의 광학적 특성에 대해 분석하였다. 저온(9 K)에서 마이크로 photoluminescence 측정을 통해 양자점의 발광파장이 피라미드의 옆면의 파장과는 다름을 확인하였다. 여기광의 세기에 따른 양자점의 발광 세기 측정하여 여기광에 선형 비례함을 보이고, 양자점의 편광도를 측정하여 선형 편광임을 확인하였다. 마지막으로, 광량에 대해 시간에 따른 상관관계를 측정함으로써 양자점이 양자 발광체의 특성을 보이는 지 확인하였다.

• Korean Journal of Materials Research
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• v.28 no.8
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• pp.474-477
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• 2018

$Ca_3MgSi_2O_8:Eu^{2+}$(x = 0.003, 0.005, 0.007, 0.01, 0.03 mol) white phosphors for Light Emitting Diodes(LED) are synthesized with different concentrations of $Eu^{2+}$ ions using a solid state reaction method. The crystal structures, surface and optical properties of the phosphors are investigated using X-Ray Diffraction(XRD), Scanning Electron Microscope(SEM) and photoluminescence(PL). The X-Ray Diffraction results reveals that the crystal structure of the $Ca_3MgSi_2O_8:Eu^{2+}$ is a monoclinic system. The particle size of $Ca_3MgSi_2O_8:Eu^{2+}$ white phosphors is about $1{\sim}5{\mu}m$, as confirmed by SEM images. The maximum emission spectra of the phosphors are observed at 0.01 mol $Eu^{2+}$ concentration. The decrease in PL intensity in the $Ca_3MgSi_2O_8:Eu^{2+}$ white phosphors with $Eu^{2+}$ concentration is interpreted by concentration quenching. The International Commission on Illumination(CIE) coordinate of 0.01 mol Eu doped $Ca_3MgSi_2O_8$ is X = 0.2136, Y = 0.3771.

• Journal of Advanced Marine Engineering and Technology
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• v.30 no.1
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• pp.176-181
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• 2006

In this study, systematical investigations were carried out on crystal qualifies and optical properties of $ZnSe_{1-x}:Te_x$ (x=0.002-0.04) thin films frown by molecular beam epitaxy (MBE). The crystal qualifies and optical properties have been investigated by X-ray diffraction (XRD) and Photoluminescence (PL) measurements, respectively. From the XRD measurements, the crystallographic characteristics showed mediocre crystal quality with increasing the Te composition. From the PL measurements, emission in the visible spectrum region from blue to green was obtained by varying the Te content of the ZnSe:Te epilayers. The efficient blue and green emission were attributed to the recombination of excitons trapped at isoelectronic isolated a single Te atom and $Te_n(n{\geq}2)$ clusters. respectively. The blue emission become dominant in Te tightly doped $ZnSe_{1-x}:Te_x$ $(Te=0.2\%)$ epilayers with increasing temperature. For the Te heavily doping condition $(Te=4.0\%)$, the dominant green emission could be observed at around 160K.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.14-14
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• 2011

AlInN has been studied extensively over the past few years due to its interesting material properties that are not present in other ternary nitrides. However, basic material study of AlInN has not been reported as much compared to device applications due to the difficulty in the growth. We have performed the material studies from various aspects. A secondary ion mass spectrometry (SIMS) has shown high oxygen content above $1{\times}10^{18}\;cm^{-3}$ with its insensitivity to the growth conditions. While the free carrier concentration observed by the capacitance-voltage (C-V) measurements was about $3{\times}10^{17}\;cm^{-3}$, the activation energy measured by temperature dependent C-V was only about 4 meV. Si doped AlInN (Si level ${\sim}2{\times}10^{18}\;cm^{-3}$) showed almost no carrier freeze-out at carrier density of $1{\times}10^{18}\;cm^{-3}$. More studies were carried out with a transmission electron microscopy, time-resolved photoluminescence and other analytical techniques to understand the results from SIMS and C-V studies. In this report, we will discuss the possible correlations between the abnormal characteristics in AlInN.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.99-99
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• 2003

The growth of GaN on Si is of great interest due to the several advantages : low cost, large size and high-quality wafer availability as well as its matured technology. The crystal quality of GaN is known to be much influenced by the surface pretreatment of Si substrate[1]. In this work, the properties of GaN overlayer grown on ion beam modified Si(111) have been investigated. Si(111) surface was treated RIB with 1KeV-N$_2$$\^$+/(at 1.9 ${\times}$ 10$\^$-5/) to dose ranging from 5${\times}$10$\^$15/ to 1${\times}$10$\^$17/ prior to film growth. GaN epilayers were grown at 1100$^{\circ}C$ for 1 hour after growing AlN buffer layers for 5∼30 minutes at 1100$^{\circ}C$ in Metal Organic Chemical Vapor Deposition (MOCVD). The properties of GaN epilayers were evaluated by X-Ray Diffraction(XRD), Raman spectroscopy, Photoluminescence(PL) and Hall measurement. The results showed that the ion modified treatment markedly affected to the structural, optical and electrical characteristic of GaN layers.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.165-165
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• 2003

The growth of GaN on Si is of great interest due to the several advantages low cost, large size and high-quality wafer availability as well as its matured technology. The crystal quality of GaN is known to be much influenced by the surface pretreatment of Si substrate [1]. In this work, the properties of GaN overlayer grown on ion implanted Si(111)and bare Si(111) have been investigated. Si(111) surface was treated ion implantation with 60KeV and dose 1${\times}$10$\^$16//$\textrm{cm}^2$ prior to film growth. GaN epilayers were grown at 1100$^{\circ}C$ for 1 hour after growing AlN buffer layers for 15-30 minutes at 1100$^{\circ}C$ with metal organic chemical vapor deposition (MOCVD). The properties of GaN epilayers were evaluated by X-Ray Diffraction (XRD), Scanning electron microscope (SEM) Photoluminescence (PL) at room temperature and Hall measurement The results showed that the GaN on ion implanted Si(111) markedly affected to the structural, optical and electrical characteristic of GaN layers.

• Journal of Powder Materials
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• v.22 no.5
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• pp.331-336
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• 2015

We report on the succesful fabrication of ZnO nanorod (NR)-based robust piezoelectric nanogenerators (PNGs) by using Cu foil substrate. The ZnO NRs are successfully grown on the Cu foil substrate by using all solution based method, a two step hydrothermal synthesis. The ZnO NRs are grown along c-axis well with an average diameter of 75~80 nm and length of $1{\sim}1.5{\mu}m$. The ZnO NRs showed abnormal photoluminescence specrta which is attributed from surface plasmon resonance assistant enhancement at specific wavelength. The PNGs on the SUS substrates show typical piezoelectric output performance which showing a frequency dependent voltage enhancement and polarity dependent charging and discharging characteristics. The output voltage range is 0.79~2.28 V with variation of input strain frequency of 1.8~3.9 Hz. The PNG on Cu foil shows reliable output performance even at the operation over 200 times without showing degradation of output voltage. The current output from the PNG is $0.7{\mu}A/cm^2$ which is a typical out-put range from the ZnO NR-based PNGs. These performance enhancement is attributed from the high flexibility, high electrical conductivity and excellent heat dissipation properties of the Cu foil as a substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.322-323
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• 2006

The nano-sized Ce-doped YAG(Yttrium Aluminum Garnet, $Y_3Al_5O_{12}$) phosphor powders were prepared by combustion method from a mixed aqueous solution of metal nitrates, using citric acid as a fuel. The luminescence formation process and structure of phosphor powders were investigated by means of XRD, SEM and PL. The XRD patterns show that YAG phase can form at all of the $Ce^{3+}$ concentration. However, when $Ce^{3+}$ concentration is over 2.0mol%, XRD patterns show $CeO_2$ peak between (321) peak and (400) peak. The pure crystalline YAG:Ce with uniform size of 30nm was obtained at 0.6mol% of the $Ce^{3+}$ concentration. The crystalline YAG:Ce powders showed broad emission peaks in the range 475~630nm and had maximum intensity at 526nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1069-1074
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• 2005

In this work, nano-needle structures ate formed to solve problem, related to low density of quantum dots for nano floating gate memory. Such structures ate fabricated and electrical properties' of MIS devices fabricated on the nano-structures are studied. Nano floating gate memory based on quantum dot technologies Is a promising candidate for future non-volatile memory devices. Nano-structure is fabricated by reactive ion etching using $SF_6$ and $O_2$ gases in parallel RF plasma reactor. Surface morphology was investigated after etching using scanning electron microscopy Uniform and packed deep nano-needle structure is established under optimized condition. Photoluminescence and capacitance-voltage characteristics were measured in $Al/SiO_2/Si$ with nano-needle structure of silicon. we have demonstrated that the nano-needle structure can be applicable to non-volatile memory device with increased charge storage capacity over planar structures.