• Ceramist
• /
• v.10 no.3
• /
• pp.34-47
• /
• 2007

Photoinduced phenomena in non-crystalline insulators and semiconductors, specifically oxide and chalcogenide glasses, are briefly reviewed with some comments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.2
• /
• pp.139-144
• /
• 2001

In this study, we have investigated the photoinduced birefringence of Ag plarized-photodoping in double-layer of Ag doped chalcognide thin films and dependence of polarization states in chalcogenide thin films. Also, we have investigated the polarization dependence of photoinduced birefringence and the anisotropy of absorption in an amorphous As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ chalcogenide thin films using two 632.8nm He-Ne lasers, which have a smaller energy than the optical energy gap (E$\sub$OP/) of the film, i.e., an exposure of sub-bandgap light (hν$\sub$op/). The photoinduced phenomena of Ag polarized-photodooping increasing the linear dichroism(d), about 84% and birefringence(Δn), about 23%. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.362-365
• /
• 2001

The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism(D) using the irradiation with polarized He-Ne laser light, in the $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layer. Mutilayer structures formed by alternating metal(Ag) a chalcogenide$(As_{40}Ge_{10}Se_{15}S_{35})$. Such multilayer structures have a greater sensitivity to illumination am larger dichroism in comparison the conventional double layer structure. Also new phenomena are discovered. These results will be show a capability of new method that suggested more improvement of photoinduced anisotropy property.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.362-365
• /
• 2001

The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism(D) using the irradiation with polarized He-Ne laser light, in the Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ multi-layer. Mutilayer structures farmed by alternating metal(Ag) a chalcogenide(As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/). Such multilayer structures have a greater sensitivity to illumination and larger dichroism in comparison the conventional double layer structure. Also new phenomena are discovered. These results will be show a capability of new method that suggested more improvement of photoinduced anisotropy property.

• Proceedings of the KIEE Conference
• /
• 2000.07c
• /
• pp.1500-1502
• /
• 2000

In this study, we have investigated the photoinduced anisotropy (PA) phenomena by the assisted. electric field effect on $As_{40}Ge_{10}Se_{15}S_{35}$ thin films. Investigation of photoinduced anisotropy on the assisted electric field effect was carried out using a He-Ne laser beams (inducing and probing beams) illuminating the same area of the thin film. To investigate the effect of electric field, various bias voltages applied. The result is shown the photoinduced anisotropy dependence on electric field. Also. we obtained the property of photoinduced anisotropy in the electric field effects by various voltages.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.11a
• /
• pp.89-92
• /
• 1998

Amorphous chalcogenide thin films, especially a-(Se, S) based films, exhibit a number of photoinduced phenomena not observed in other types of amorphous thin films. The polarization holographic grating has been formed in amorphous As-Ge-Se-S thin films using two linearly polarized He-Ne laser light. In addition, dffraction efficiency has been measured by the same laser of a relative lower intensity at the same time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.87-90
• /
• 1999

The dependence of diffraction efficiency as a funct~on of film thickness and incident angle has been investigated in amorphous chalcogenide thin films, which act as a polarization holographic materials. Especially a-(Se, S) based films exhibit a number of photoinduced phenomena not observed in other types of amorphous thin films. Holographic gratings in amorphous As-Ge-Se-S thin films have been formed using the mutual perpendicular polarized(linearly) He-Ne laser light. We could obtain the optimum condition to get high diffraction efficiency.