• Title/Summary/Keyword: Photodiodes

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Optimization of charge and multiplication layers of 20-Gbps InGaAs/InAlAs avalanche photodiode

  • Sim, Jae-Sik;Kim, Kisoo;Song, Minje;Kim, Sungil;Song, Minhyup
    • ETRI Journal
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    • v.43 no.5
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    • pp.916-922
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    • 2021
  • We calculated the correlation between the doping concentration of the charge layer and the multiplication layer for separate absorption, grading, charge, and multiplication InGaAs/InAlAs avalanche photodiodes (APDs). For this purpose, a predictable program was developed according to the concentration and thickness of the charge layer and the multiplication layer. We also optimized the design, fabrication, and characteristics of an APD for 20 Gbps application. The punch-through voltage and breakdown voltage of the fabricated device were 10 V and 33 V, respectively, and it was confirmed that these almost matched the designed values. The 3-dB bandwidth of the APD was 10.4 GHz, and the bit rate was approximately 20.8 Gbps.

The Study of the Photo Diode Output Signal for Pusle Radiation Detection (펄스방사선 탐지를 위한 Photo Diode 출력특성 연구)

  • Hwang, Young-Gwan;Lee, Nam-Ho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.05a
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    • pp.869-871
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    • 2012
  • In this paper, we make silicon photodiodes for the detection of pulsed radiation that affects electronics devices and study the output characteristics of photodiodes using circuit design. We conducted the simulation for pulse sensing circuit and experimented the photodiode output characteristics using a high luminance light emitting diode. The results can be used for the design of the input sensor that is trigger of additional module for protecting a electoronics circuit from high energy pulse radiation.

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Reducing the Effects of Optical Noise in an Optical Wireless System Using a Fiber Coupler (무선광시스템에서 광섬유 커플러를 이용한 잡음광의 영향 감소)

  • Lee Seong-Ho
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.16 no.5 s.96
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    • pp.494-500
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    • 2005
  • In this paper, optical noise is reduced by a differential detector with an optical fiber coupler in an optical wireless system. An $1\times2$ optical fiber coupler divides the received optical signal by 2 equally, and connects them to the two photodiodes in a differential detector. The output voltage variation due to the abrupt change of optical noise distribution in space disappears because the two photodiodes effectively detect the optical signal at the same point. The signal to noise ratio in a differential detector with a fiber coupler was 8 dB higher than in a single photodiode with an optical filter.

The fabrication of 6H- SiC UV photodiode and the analysis of the photoresponse (6H-SiC UV 광다이오드의 제작 및 수광특성 해석)

  • 박국상;이기암
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.1
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    • pp.126-136
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    • 1997
  • 6H-SiC UV photodiodes with $p^+$/n/n mesa structure were fabricated. The photocurrents of the photodiodes were measured in the wavelength range of 200~600 nm. The photocurrents were sensitive to ultraviolet radiation of 200~500 nm, and come to the maximum value at 260 nm. The quantum efficiency was calculated by using the diffusion model of minority carriers, and compared with the distribution of the photocurrent measured as a function of wavelength each other. The photocurrents of the 6H-SiC photodiode were explained by the diffusion model of the minority carriers which contained the optical absorption of the depletion region as well as the other layers.

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Development and Characterization of Finger-type PIN Photodiode for Fluorescence Detection of RNA (RNA 형광 검출을 위한 Finger형 PIN 광다이오드의 제작 및 평가)

  • Kim, Ju-Hwan;Oh, Myung-Hwan;Ju, Byeong-Kwon
    • Journal of Sensor Science and Technology
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    • v.13 no.2
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    • pp.85-89
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    • 2004
  • This paper represents the development of high sensitivity photo-sensor for the fluorescence detection in the integrated biological analysis system. The finger-type PIN photodiodes were fabricated as the photo-sensor, and had a high sensitivity ($I_{light}/I_{dark}$ = 8720). The interference filter consisted of $TiO_{2}$ and $SiO_{2}$ was directly deposited on the photodiodes. Deposited filter with 95.5% reflection under 532 nm and 98% transmission over 580 nm exceedingly decreased the magnitude of background signal in the detection. The PDMS micro-fluidic channels are bonded on the photodiode by $O_{2}$ plasma treatment. The detection current was proportional to two primary parameters (light intensity, concentration), and the on-chip detection system could detect fluorescence signals down to 100 nM concentration (LOD = Limit of detection of rhodamine).

SNR Improvement in A Wireless Optical Differential Detector Using Plastic Fibers (플라스틱 광섬유를 이용한 무선광 차동검출기의 신호대잡음비 개선)

  • Lee Seong-Ho
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.16 no.4 s.95
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    • pp.410-417
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    • 2005
  • In this paper, optical noise is reduced by a differential detector with a plastic optical fiber bundle in a wireless optical interconnection. A plastic optical fiber bundle divides the received optical signal equally and connects it to two photodiodes. In this configuration two photodiodes effectively detect the optical signal at one point, and the output voltage variation due to the abrupt change of optical noise distribution in space disappears. The signal to noise ratio in a differential detector with a fiber bundle was improved to be $10\;\cal{dB}$ higher than in a single photodiode with an optical filter.

Fabrication and Characteristics of a-Si : H Photodiodes for Image Sensor (영상센서를 위한 a-Si : H 광다이오드의 제작 및 특성)

  • Park, Wug-Dong;Kim, Ki-Wan
    • Journal of Sensor Science and Technology
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    • v.2 no.1
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    • pp.29-34
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    • 1993
  • a-Si : H photodiodes for image sensor have been fabricated and characterized. Photosensitivity of a ITO/a-Si : H/Al photodiode without blocking layer was 0.7 under the applied voltage of 5 V and peak spectral sensitivity in visible region was found at 620 nm. Dark current of ITO/a-SiN : H/a-Si : H/p-a-Si : H/Al photodiode was suppressed by hole blocking layer and electron blocking layer at the value of lower than 1.5 pA to the applied voltage of 10 V. Also maximum photosensitivity was about 1 under the applied voltage of 3 V and peak spectral sensitivity was found at 540 nm.

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