• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.20 no.5
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• pp.623-631
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• 2011

Light emitting diodes (LEDs) which can produce uniform luminescence need a very difficult and complex procedure because LEDs have strong and straight optical property. One of the major parameters for LED production is the determination of the viewing angle. However, in the present, there is still no available production technology to measure LED viewing angle and optical property. In this study, we developed a five-side LED viewing angle and optical property measurement system, having a source meter that uses a high speed switching photo relay instead of a mercury relay. This new measurement system can measure the viewing angle at a very high accuracy of ${\pm}0.66^{\circ}$. This new technology presents a great potential for fast and reliable LED mass production, which can significantly cut down the cost from savings in production time.

• Korean Journal of Optics and Photonics
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• v.7 no.1
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• pp.66-71
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• 1996

We analyzed and fabricated InP/InGaAs avalanche photodiode (APD) having floating guard ring (FGR). Since the FGR-APD is very simple to fabricate and highly reliable, the fabrication of FGR-APD and its application to the optical receiver are very useful and interesting. A double zinc diffusion was employed to fabricate and one dimensional electric field analysis was used for design. Two dimensional gain measurement showed that the FGR suppressed gain at the curved edge, indicating the successful behavior as a guard ring. The fabricated device had 35 GHz of gain-bandwidth product, and showed the sensitivity of -31.9 dBm at a bit error rate of $10^{-9}$ when it was applied to a 2.5 Gbps optical receiver.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.85-89
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• 2004

This paper represents the development of high sensitivity photo-sensor for the fluorescence detection in the integrated biological analysis system. The finger-type PIN photodiodes were fabricated as the photo-sensor, and had a high sensitivity ($I_{light}/I_{dark}$ = 8720). The interference filter consisted of $TiO_{2}$ and $SiO_{2}$ was directly deposited on the photodiodes. Deposited filter with 95.5% reflection under 532 nm and 98% transmission over 580 nm exceedingly decreased the magnitude of background signal in the detection. The PDMS micro-fluidic channels are bonded on the photodiode by $O_{2}$ plasma treatment. The detection current was proportional to two primary parameters (light intensity, concentration), and the on-chip detection system could detect fluorescence signals down to 100 nM concentration (LOD = Limit of detection of rhodamine).

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.9
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• pp.56-64
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• 1992

Because of a small bandgap energy, a high doping density, and a low operating temperature, the dark current in HgCdTe photodiode is almost composed of a tunneling current. The tunneling current is devided into an indirect tunneling current via traps and a band-to-band direct tunneling current. The indirect tunneling current dominates the dark current for a relatively high temperature and a low reverse bias and forward bias. For a low temperature and a high reverse bias the direct tunneling current dominates. In this paper, to verify the tunneling currents in HgCdTe photodiode, the new tunneling-recombination equation via trap is introduced and tunneling-recombination current is calculated. The new tunneling-recombination equation via trap have the same form as SRH (Shockley-Read-Hall) generation-recombination equation and the tunneling effect is included in recombination times in this equation. Chakrabory and Biswas's equation being introduced, band to band direct tunneling current are calculated. By using these equations, HgCdTe (mole fraction, 0.29 and 0.222) photodiodes are analyzed. Then the temperature dependence of the tunneling-recombination current via trap and band to band direct tunneling current are shown and it can be known what is dominant current according to the applied bias at athe special temperature.

• Journal of Sensor Science and Technology
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• v.19 no.4
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• pp.285-290
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• 2010

In this paper, a dynamic range(DR) extension technique based on a 3-transistor active pixel sensor(APS) and dual image sampling is proposed. The feature of the proposed APS is that the APS uses two or more photodiodes with different sensitivities, such as a high-sensitivity photodiode and a low-sensitivity photodiode. Compared with previously proposed wide DR(WDR) APS, the proposed approach has several advantages, such as no-external equipments or signal processing, no-additional time-requirement for additional charge accumulation, simple operation and adjustable DR extension by controlling parasitic capacitance and sensitivity of two photodiodes. Approximately 16 dB of DR extension was evaluated from the simulation for the situation of 10 times of sensitivity difference and the same size of parasitic capacitance between those two photodiodes.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.7-13
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• 2007

In the optical module for optical communications, the flip chip bonding is used fer the precise alignment of the optical fiber and optical device. In flip chip bonding, the optical device is aligned and welded while observing the alignment mark of substrate and chip by using flip chip bonder in order to bond the optical device at the exact position. In this research, optical passive alignment method of photodiode(PD) flip chip bonding is suggested for low cost optical subassembly. By using the visible He-Ne laser (633nm wavelength), photodiode is easily aligned with emitting spot on the optical fiber with the help of stereoscopic alignment system. We compensated wavelength dependent deviation about 4m to find out real alignment position of 1550nm input laser by ray tracing. The maximum optical coupling efficiency between the optical fiber and photodiode was about 23.3%.

• Korean Journal of Food Science and Technology
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• v.31 no.1
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• pp.30-35
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• 1999

A simple, rapid, efficient method is for extraction of 13 synthetic water-soluble food colours (Tartrazine, Amarnth, Indigo carmine, New coccine, Sunset yellow FCF, Allura red AC, Eosine, Fast Green FCF, Brilliant Blue FCF, Erythrosine, Acid red, phloxine, Rose Bengal) by polyamide resin and for their quantitative by high performance liquid chromatography (HPLC). Colours (coal-tar dyes) were extracted with polyamide resin and then determinated by HPLC. The HPLC conditions using a reverse phase partition type column $(Nova-pak\;C_{18})$, photodiode array (PDA) detector and 1% Ammonium acetate / 60% acetonitrile in water as eluent, were acceptable for various kinds of colorants. By the use of the proposed method, a survey of coal-tar dyes was carried out on 20 samples and that were detected $4.76{\sim}133.47\;ppm$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.6
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• pp.1407-1412
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• 2014

In order to improve spectrum sensitivity of photodiode for detection of the laser at 850 nm ~ 1000 nm of near-infrared wavelength band, this study has produced silicon-based fast film PIN photodiode and analyzed electrical and optical properties. The manufactured device is packaged in TO-18 type. The electrical properties of the dark currents both Anode 1 and Anode 2 have valued of approximately 0.055 nA for 5 V reverse bias, while the capacitance showed 19.5 pF at frequency range of 1 kHz and about 19.8 pF at the range of 200 kHz for 0 V. In addition, the rising time of output signal was verified to have fast response time of about 30 ns for 10 V. For the optical properties, the best spectrum sensitivity was 0.66 A/W for 880 nm, while it was relatively excellent value of 0.45 A/W for 1,000 nm.

• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.239-246
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• 1999

A highly sensitive photovoltaic infrared photodiode was fabricated for detecting infrared light in $3{\sim}5\;{\mu}m$ wavelength range on InSb wafer with p-i-n structure grown by MOCVD. Silicon dioxide($SiO_2$) insulating films for the junction interface and surface of photodiode were prepared using RPCVD because InSb has low melting point and evaporation temperature. After formation of In ohmic contacts by thermal evaporation, the electrical properties of the photodiode were characterized in dark state at 77K. A product of zero-bias resistance and area($R_0A$) showed $1.56{\times}10^6\;{\Omega}{\cdot}cm^2$ that satisfied BLIP(background limited infrared photodetector) condition. When the photodiode was tested under infrared light, the normalized detectivity of about $10^{11}\;cm{\cdot}Hz^{1/2}{\cdot}W^{-1}$ was obtained. we successfully fabricated a unit cell with InSb IR array with good quantum efficiency and high detectivity.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.683-683
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• 2004