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http://dx.doi.org/10.6109/jkiice.2014.18.6.1407

Analysis of Electrical and Optical Characteristics of Silicon Based High Sensitivity PIN Photodiode  

Lee, Jun-Myung (Department of Information and Communication Engineering, Wonkwang University)
Kang, Eun-Young (Department of Information and Communication Engineering, Wonkwang University)
Park, Keon-Jun (Department of Information and Communication Engineering, Wonkwang University)
Kim, Yong-Kab (Department of Information and Communication Engineering, Wonkwang University)
Hoang, Geun-Chang (Department of Microelectronics and Display Technology, Wonkwang University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.18, no.6, 2014 , pp. 1407-1412 More about this Journal
Abstract
In order to improve spectrum sensitivity of photodiode for detection of the laser at 850 nm ~ 1000 nm of near-infrared wavelength band, this study has produced silicon-based fast film PIN photodiode and analyzed electrical and optical properties. The manufactured device is packaged in TO-18 type. The electrical properties of the dark currents both Anode 1 and Anode 2 have valued of approximately 0.055 nA for 5 V reverse bias, while the capacitance showed 19.5 pF at frequency range of 1 kHz and about 19.8 pF at the range of 200 kHz for 0 V. In addition, the rising time of output signal was verified to have fast response time of about 30 ns for 10 V. For the optical properties, the best spectrum sensitivity was 0.66 A/W for 880 nm, while it was relatively excellent value of 0.45 A/W for 1,000 nm.
Keywords
PIN Photodiode; Photodetector; Silicon(Si); Spectral responsivity; TO package;
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Times Cited By KSCI : 1  (Citation Analysis)
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