• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.408-408
• /
• 2014

Graphene has received attention with its high electron mobility and visual transparency as a promising material for optoelectronic and photonic applications. Combination of graphene and conducting nanostructures i.e. plasmonic structures has recently been researched for enhancing light-matter interaction and overcoming diffraction limit of light. Here we show enhanced photodetection of incoherent visible light with graphene-mediated plasmonics. Gold nanoparticles fabricated by focused ion beam was used as an active element of photodetection and graphene was utilized as an interfacing material between nanostructures and electrodes. Hot electrons generated upon plasmon decay within nanoparticles pass over the potential barrier between nanostructure and graphene and give rise to a photocurrent with built-in electric field. We report 76.7% enhancement of photocurrent under resonant irradiation of fiber-coupled halogen lamp compared to the case without light illumination. We showed wavelength-dependent current response arisen from plasmonic nanostructure, providing a good agreement with theoretical calculation.

• Journal of the Optical Society of Korea
• /
• 제15권1호
• /
• pp.1-3
• /
• 2011

We characterize and analyze silicon avalanche photodetectors (APDs) fabricated with standard complementary metal-oxide-semiconductor (CMOS) technology. Current characteristics, responsivity, avalanche gain, and photodetection bandwidth of CMOS-APDs based on two types of PN junctions, N-well/P-substrate and $P^+$/N-well junctions, are compared and analyzed. It is demonstrated that the CMOS-APD using the $P^+$/N-well junction has higher responsivity as well as higher photodetection bandwidth than N-well/P-substrate. In addition, the important factors influencing CMOS-APD performance are clarified from this investigation.

• 한국광학회:학술대회논문집
• /
• 한국광학회 2003년도 제14회 정기총회 및 03년 동계학술발표회
• /
• pp.146-147
• /
• 2003

무선 통신 시스템이 발달하고 정보의 양이 많아짐에 따라 고주파를 이용한 통신 시스템에 대한 수요가 증가하고 있다. 최근 이러한 고주파 통신 시스템을 optical fiber를 이용하여 구현(Radio-on-fiber system)하는 연구가 주목받고 있다. 무선 고주파 통신 시스템에서는 많은 수의 안테나 기지국이 필요하게 되는데 optical fiber를 이용하면 적은 전송 손실로 기지국간의 연결이 가능하게 된다. 안테나 기지국의 구축을 위해서 최근 InP High Electron Mobility Transistor(HEMT)를 이용하여 광 검출을 구현하는연구가 활발히 진행되고 있다. (중략)

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.389.1-389.1
• /
• 2016

The flexible solid state device has been widely studied as portable and wearable device applications such as display, sensor and curved circuits. A zero-bias operation without any external power consumption is a highly-demanding feature of semiconductor devices, including optical communication, environment monitoring and digital imaging applications. Moreover, the flexibility of device would give the degree of freedom of transparent electronics. Functional and transparent abrupt p/n junction device has been realized by combining of p-type NiO and n-type ZnO metal oxide semiconductors. The use of a plastic polyethylene terephthalate (PET) film substrate spontaneously allows the flexible feature of the devices. The functional design of p-NiO/n-ZnO metal oxide device provides a high rectifying ratio of 189 to ensure the quality junction quality. This all transparent metal oxide device can be operated without external power supply. The flexible p-NiO/n-ZnO device exhibit substantial photodetection performances of quick response time of $68{\mu}s$. We may suggest an efficient design scheme of flexible and functional metal oxide-based transparent electronics.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1989년도 하계종합학술대회 논문집
• /
• pp.629-632
• /
• 1989

The scattered light intensity from a spherical particle passing through the cross-over region of two coherent laser beams, varies periodically. Photodetection of this light beams produces a periodic signal of varying amplitude. The phase of the signal varies with the particle size and refractive index, the beam crossing angle and wavelength, and the position and size of the scattered ligth collecting aperture. In this paper the phase variation with respect to the particle absorptive index of retraction, collecting lens size and beam crossing angle is calculated using both Mie scattering theory and reflection theory. The two theories show good agreement in phase predictions, especially for large absorptive indices and for small collection lenses. Both theories predict phase to be inversely proportional to the beam crossing angle.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제14권1호
• /
• pp.117-123
• /
• 2014

The fabrication and characterization of a Si/ZnO thin film heterojunction ultraviolet photodiode has been presented in this paper. ZnO thin film of ~100 nm thick was deposited on <100> Silicon (Si) wafer by atomic layer deposition (ALD) technique. The Photoluminescence spectroscopy confirms that as-deposited ZnO thin film has excellent visible-blind UV response with almost no defects in the visible region. The room temperature current-voltage characteristics of the n-ZnO thin film/p-Si photodiodes are measured under an UV illumination of $650{\mu}W$ at 365 nm in the applied voltage range of ${\pm}2V$. The current-voltage characteristics demonstrate an excellent UV photoresponse of the device in its reverse bias operation with a contrast ratio of ~ 1115 and responsivity of ~0.075 A/W at 2 V reverse bias voltage.

• Current Optics and Photonics
• /
• 제7권2호
• /
• pp.200-206
• /
• 2023

Near-infrared (NIR) sensing technology using CMOS image sensors is used in many applications, including automobiles, biological inspection, surveillance, and mobile devices. An intuitive way to improve NIR sensitivity is to thicken the light absorption layer (silicon). However, thickened silicon lacks NIR sensitivity and has other disadvantages, such as diminished optical performance (e.g. crosstalk) and difficulty in processing. In this paper, a pixel structure for NIR sensing using a stacked CMOS image sensor is introduced. There are two photodetection layers, a conventional layer and a bottom photodiode, in the stacked CMOS image sensor. The bottom photodiode is used as the NIR absorption layer. Therefore, the suggested pixel structure does not change the thickness of the conventional photodiode. To verify the suggested pixel structure, sensitivity was simulated using an optical simulator. As a result, the sensitivity was improved by a maximum of 130% and 160% at wavelengths of 850 nm and 940 nm, respectively, with a pixel size of 1.2 ㎛. Therefore, the proposed pixel structure is useful for NIR sensing without thickening the silicon.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.389.2-389.2
• /
• 2016

The flexible solid state device has been widely studied as portable and wearable device applications such as display, sensor and curved circuits. A zero-bias operation without any external power consumption is a highly-demanding feature of semiconductor devices, including optical communication, environment monitoring and digital imaging applications. Moreover, the flexibility of device would give the degree of freedom of transparent electronics. Functional and transparent abrupt p/n junction device has been realized by combining of p-type NiO and n-type ZnO metal oxide semiconductors. The use of a plastic polyethylene terephthalate (PET) film substrate spontaneously allows the flexible feature of the devices. The functional design of p-NiO/n-ZnO metal oxide device provides a high rectifying ratio of 189 to ensure the quality junction quality. This all transparent metal oxide device can be operated without external power supply. The flexible p-NiO/n-ZnO device exhibit substantial photodetection performances of quick response time of $68{\mu}s$. We may suggest an efficient design scheme of flexible and functional metal oxide-based transparent electronics.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.127-127
• /
• 2010

Owing to many advantages on indirect intersubband absorption from the hole miniband to the electron miniband based on the type-II band alignment in InAs/GaSb strained-layer superlattice (SLS), InAs/GaSb SLS infrared photodetector (SLIP) has emerged as a promising system to realize high-detectivity quantum photodetector operating up to room temperature in the spectral range of mid-infrared (MIR) to far-infrared (FIR). In particular, n-barrier-n (n-B-n) structure designed for blocking the majority-carrier dark current makes it possible for MIR/FIR dual-band SLIP whose photoresponse (PR) band can be exclusively selected by the bias polarity. In this study, we present the MIR and FIR photoresponse (PR) mechanism identified by dual-band PR spectra and photoluminescence (PL) profiles taken from InAs/GaSb SLIP. In the MIR/FIR PR spectra measured by changing bias polarity, each spectrum individually shows a series of distinctive peaks related to the transitions from the hole subbands to the conduction one. The PR mechanism at each polarity is discussed in terms of diffusion current, and a superposition of MIR-PR in the FIR-PR spectrum is explained by tunnelling of electrons activated in MIR-SLS. The effective FIR-PR spectrum decomposed into three curves for HH1, LH1, and HH2 has revealed the edge energies of 120, 170, and 220 meV, respectively, and the temperature variation of the MIR-PR edge energies shows that the temperature behavior of the SLS systems can be approximately expressed by the Varshni empirical equation.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
• /
• pp.244.1-244.1
• /
• 2015

The Ag Nanowire is one of the materials that are widely studied as alternatives to ITO and is available for large area, low cost process and the flexible transparent electrode. However, Ag nanowire can have the problem of a lack of stability at high temperatures, making this impossible to form a film. Using a structure of ITO/AgNW/ITO in photodetector device, we improved the properties of the ITO in the IR region and improved the thermal stability of the AgNW. The structure of ITO/AgNW/ITO has a high transmittance value of 89% at a wavelength of 900 nm and provide a good electrical property. The AgNWs embedded ITO film has a high transmittance, this is because of the light scattering from the AgNW. The thermal stability of the developed ITO/AgNWs/ITO films were investigated and found AgNWs embedded ITO films posses considerable high stability compared to the solo AgNWs on the Si surface. The ITO/AgNWs/ITO device showed a improved photo-response ratio compared to those of the conventional TC device in IR region. This is attributed to the high transmittance and low sheet resistance. We suggest an effective design scheme for IR-sensitive photodetection by using an AgNW embedded ITO.