• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.420-423
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• 2002

In recent years, there has been keen interest in developing f1at panel detectors for all modalities of radiology, including gerneral radiology, fluoroscopy(angiography and cardiology), electronic portal imaging, and mammography. In this paper, we report the new hybrid x-ray detector consisted of CsI(Tl) photoemission layer and a-Se photoconductor layer to resolve conventional x-ray detector such as the direct detector using a-Se and the indirect detector using CsI(Tl)/a-Si. To design the structure of CsI(Tl)/a-Se detector, the penetrated energy spectrum and absorption fraction was estimated using MCNP 4C code. Experimental results showed that the absorption fraction of $500{\mu}m-Se$ film and $150{\mu}m-CsI\left(Tl \right)/a-Se\left( 30{\mu}m \right)$ film is 70% at 70 kVp. The absorption energy is 90% at $350{\mu}m-CsI(Tl)$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.366-369
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• 2002

At present, the study of direct digital X-ray detector and indirect digital X-ray detector proceed actively. But it needs high thickness and high voltage in selenium for high ionization rate. Therefore, we carried out the study of electric characteristics of a-Se with additive ratio of Iodine in drafting study for developing Hybrid X -ray Sensor for complementing direct digital X -ray detector and indirect digital X-ray detector in this paper. On this, there are formed Amorphous selenium multi-layers by sticking phosphor layer$(Gd_{2}O_{2}S(Eu^{2+}))$ using optical adhesives of EFIRON Co. Amorphous selenium multi-layers having dielectric layer(parylene) has characteristics of low dark-current, high X-ray sensitivity. So we can acquired a enhanced signal to noise ratio. We make Amorphous selenium multi-layers with $30{\mu}m$ thickness on glass.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.71-74
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• 2003

Photoconductor for direct detection fiat-panel imager present a great materials challenge, since their requirement include high X-ray absorption, ionization and charge collection, low leakage current and large area deposition, CdTe is practical material. We report studies of detector sensitivity, That is an CdTe with $5{\mu}m$ thickness on glass. That is hybrid layer of depositting ZnS:AgCl phosphor with $100{\mu}m$ on CdTe. The leakage current of hybrid is similar to it of a-Se, but photocurrent is larger than a-Se. Both of them have high spatial resolution, but hybrid has higher sensitivity than a-Se at comparable bias voltage.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.384-387
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• 2003

In this paper, the evaluation of image quality was performed for digital radiography which is developing in using amorphous selenium as a photoconductor material for the purpose of offering basic research data and measurement technique about Medical Imaging Quality. So Modulation Transfer Function as a main factor of imaging quality evaluation was investigated by slit method. For measurement of MTF, Nuclear associates. 07-624 Slit camera image was obtained to study the variation of MTF corresponding to changing spatial frequency. And Presampling MTF was estimated by slit camera image with $10\;{\mu}m$ width at Digital Radiography. In this study, the obtained data demonstrates that the clinical value of a direct conversion type digital radiation detector using the amorphous selenium, which is being developed by domestic technology.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.388-391
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• 2003

The properties of these detectors can be controlled by electronics and exposure conditions. Flat-panel detectors for digital diagnostic imaging convert incident x-ray images to charge images. Flat panel detectors gain more interest real time medical x-ray imaging. Active area of flat panel detector is $14{\times}17$ inch. Detector is based on a $2560{\times}3072$ away of photoconductor and TFT pixels. X-ray conversion layer is deposited upper TFT array flat panel with a 500m by thermal deposition technology. Thickness uniformity of this layer is made of thickness control technology(5%) of thermal deposition system. Each $139m{\times}139m$ pixel is made of thin film transistor technology, a storage capacitor and charge collection electrode having geometrical fill factor of 86%. Using the separate driving system of two dimensional mosaic modules for large area, that is able to 4.2 second per frame. Imaging performance is suited for digital radiography imaging substitute by conventional radiography film system..

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.116-119
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• 2003

[ $Hg_{1-x}Cd_xTe$ ] (MCT) was grown by hot wall epitaxy method. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of 590 C for 15 min. When the thickness of the CdTe buffer layer was 5 m or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111) /GaAs substrate at various temperature in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment. The photoconductor characterization for the epilayers was also measured. The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out.

• 한국방사선학회논문지
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• 제11권6호
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• pp.525-529
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• 2017

요오드화수은은 우수한 엑스선 민감도 특성을 가진 광도전체로 비정질 셀레늄을 대체할 수 있는 후보물질로 많은 연구가 진행되고 있지만 높은 누설전류로 인해 상용화에 많은 한계점을 나타내고 있다. 본 연구에서는 요오드화수은의 높은 누설전류를 저감하기 위해 요오드화수은에 비해 입자가 작은 이산화규소 및 이산화티타늄을 물리적으로 혼합하여 단위시편을 제작하였으며 제작된 단위시편의 전기적 특성을 비교 분석하였다. 그 결과 혼합한 두 물질 모두 요오드화수은의 높은 누설전류를 저감하는데 효과가 있었으며 요오드화수은-이산화티타늄 혼합물에서는 방사선 민감도 특성이 상당히 높아짐을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.77-80
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• 2004

In this study, the purpose is to verified the feasibility to develope Hybrid x-ray detector in order to resolve problems of direct and indirect x-ray detectors. The properties of X-ray detector depend on absorption of X-ray, charge generation by x-ray photon, leakage current. In this study, CdS was used as photoconductor, and $Y_2O_2S:Tb$ as x-ray phosphor was formed on CdS in order to embody Hybrid structure. And Screen printing was used to form Muli-layer. Characteristics of this specimen were analyzed by using SEM, and XRD. And Photoluminescence spectrum of $Y_2O_2S:Tb$, leakage current, with respect to applied voltages, output charge with respect to applied voltages, and X-ray sensitivity were measured. Also, linearity with respect to dose was measured. Leakage current was similar with direct digital x-ray detector, but sensitivity of the hybrid structure is much better than the single-layer structure.

• 한국진공학회지
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• 제9권4호
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• pp.406-410
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• 2000

Hot-wall epitaxy 방법으로 GaAs (100) 기판 위에 9 $\mu\textrm{m}$의 CdTe (111)을 완충층으로 성장하고 그 위에 in-situ로 $Hg_{1-x}Cd_x$/Te (MCT)박막을 성장하였다. 성장된 MCT박막의 2결정 x-선 요동곡선의 반치폭 값은 125 arcsec이었으며 표면 형상의 roughness는 10 nm의 작고 깨끗한 면을 나타내었다. 성장된 MCT 박막에 대한 광전류 측정으로부터 최대 peak 파장과 cut off 파장은 각각 1.1050 $\mu\textrm{m}$ (1.1220 eV)와 1.2632 $\mu\textrm{m}$ (0.9815 eV)임을 알았다 이 peak 파장은 광전도체의 intrinsic transition에 기인한 band gap에 대응하는 봉우리이다. 이로부터 MCT 박막은 1.0 $\mu\textrm{m}$에서 1.6 $\mu\textrm{m}$의 근적외선 파장 영역을 감지할 수 있는 광전도체용 검출기로 쓰일 수 있음을 알았다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.399-402
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• 2002

This paper is researched that electric characteristic of Digital x-ray radiography technique with changing composition ratio of Iodine. Dopant material, Iodine is evaporated with amorphous selenium. Thorugh the old papers say, doponted Iodine will be down the created trap level because of Arsenic dopant material in amorphous selenium. Arsenic material of Composition ratio in amorphous selenium is fixed with 0.3% and test sample is deposited composition of 30, 100, 300, 500, 700ppm with thermal evaporate system. Experimental measurement is performed by dark current and x-ray sensitivity in amorphous selenium based radition detector sensor. Fabricated test sample thickness is $30{\mu}m$ and injected voltage is $3{\mu}m$，$6{\mu}m$，$9{\mu}m$ to both electrode. Experimental results showed that the net charge of composition rate of 30ppm is 398.88 pc/mR/$cm^2$ very high. And increase of the Iodine composition ratio is tendency to the decrease of net charge. Doping changing composition of Iodine in amorphous selenium detector offered to basical information of amorphous selenium material.