• 대한의용생체공학회:의공학회지
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• 제18권3호
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• pp.307-313
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• 1997

비정질 실리콘에서의 photoconductive gain mechanism을 방사선 계측시 이용하기 위한 연구를 수행하였다. p-i-n, n-i-n, n-i-p-i-n과 같은 여러 형태의 비정질 실리콘 계측기를 제작하고 시험하였다. Photoconductive gain은 두 가지의 시간적 범위에서 측정하였다. : 하나는 고에너지의 하전입자나 감마선의 통과를 모사하기 위해서 $1{\mu }$ sec 보다 짧은 가시광선 펄스를 사용하였고, 다른 하나는 의학영상에 사용되는 x-선을 모사하기 위하여 보다 긴 1msec 정도의 가시광선 펄스를 사용하였다. 두 가지의 photoconductive gain-current gain과 charge gain-을 정의하여 실험하였으며, charge gain은 current gain을 시간에 따라 적분한 값이다. 10 mA/$cm^2$의 dark current density level에서, 짧은 펄스에 대해서는 3~9정도의 charge gain을 얻을 수 있었고 긴 펄스에 대해서는 수백의 charge gain을 얻을 수 있었다. 여러 가지의 gain에 대한 결과를 계측기의 구조, 부가전압, dark current density와의 관계를 통하여 논의하였다.

• 대한의용생체공학회:학술대회논문집
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• 대한의용생체공학회 1997년도 춘계학술대회
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• pp.457-460
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• 1997

The photoconductive gain mechanism in various types of hydrogenated amorphous silicon devices, such as p-i-n, n-i-n and n-i-p-i-n structures was investigated in connection with applications to radiation detection. We measured the photoconductive gain in two time scales: one for short pulses of visible light $(<1{\mu}sec)$ which simulate the transit of energetic charged particles, and the other for rather long pulses of light $(\sim1msec)$ which simulate x-ray exposure in medical imaging. We used two definitions of photoconductive gain: current gain and charge gain which is an integration of the current gain. We found typical charge gains of $3\sim9$ for short pulses and a few hundred for long pulses at a dark current density level of $10mA/cm^2$.

• 센서학회지
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• 제7권1호
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• pp.17-22
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• 1998

$4{\mu}m$ 두께의 a-Se 광도전막을 이용한 HARP (high-gain avalanche rushing amorphous photoconductor) 촬상관을 제작하고 그 특성을 조사하였다. 타겟전압이 360 V 이상으로 증가함에 따라 촬상관의 신호전류는 급격하게 증가하였으나 암전류는 490 V의 전압까지 3.2 nA이하로 억제되었다. $1.1{\times}10^{6}V/cm$의 전기장에서 440 nm의 파장에 대한 타겟의 양자효율은 약 4.3으로 나타났다. 또한 촬상관의 진폭응답은 800 TV line에서 7.5 %였으며 잔상은 3.4%였다.

• Journal of the Optical Society of Korea
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• 제20권3호
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• pp.435-440
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• 2016

We developed a simple and real-time readout autocorrelator for several tens and sub-10fs pulses, based on the two photon absorption phenomena of a commercial GaP photodetector including a transimpedance amplifier. With a suitable gain adjustment, we demonstrated that the interferometric autocorrelation for sub-nJ pulses delivered as a high output voltage as to resolve all fringes in an autocorrelation trace with features of low noise and a low offset voltage. By fitting the measured quadratic power dependence of output voltages, we obtained the quantum efficiency of TPA for the GaP detector comparable with those of a GaAsP diode and an SHG with a thin BBO crystal. The autocorrelator of a TPA based GaP photodetector is highly suitable for sensitively measuring a few cycle pulses with a broad spectral distribution from 600 nm to 1100 nm.

• Nuclear Engineering and Technology
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• 제29권6호
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• pp.468-475
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• 1997

The transient photocurrent in amorphous silicon radiation detectors (n-i-n and forward biased p-i-n) were analyzed. The transient photocurrents in these devices could be modeled using multiple trap levels in the forbidden gap. Using this model the rise and decay shapes of the photocurrents could be fitted. The decaying photocurrent shapes of the p-i-n and n-i-n devices after a short duration of light pulse showed a similar behavior at low dark current density levels, but at higher dark current density levels the photocurrent of the p-i-n diode decayed faster than that of the n-i-n, which could be explained by the decreased electron lifetimes in the forward biased p-i-n diode at high dark current densities. The transient photoconductive gain behaviors in the amorphous silicon radiation detectors are discussed in terms of device configuration, dark current density and time scale.

• 전자공학회지
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• 제30권5호
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• pp.499-508
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• 2003

실제 실험에 사용한 대표적인 InAs/GaAs QUDIP에 대해서 detector를 평가하는데 사용하는 responsitity D*뿐만 아니라 이두 값을 좌우하는 phottoconductive gain 양자효율 noise current에 대해 정량적으로 살펴보고 QWIP와 비교해보았다 우선 가장 중요한 것은 QDIP의 온도가 약 10K에서 거의 200K까지 올라가도 responsivity와 D* 모두 온도에 따라 민감하게감소하지 않는다는 사실이다(거의 10배 정도만 감소했음). 이러한 측정결과는 QDIP의 가장 큰 장점인 실온 동작 가능성이 아주 높음을 확인시켜 준다. 참고로, 이미 사용되고 있는 QWIP나 MCT detector는 낮은 온도 영역에서도 온도가 증가함에 따라 responsivity와 D*가 민감하게 감소해서 77K 이상에서는 동작하지 않는다. 두번째로, QWIP는 시료의 표면에 수직 입사되는 IR에 반응하지 않는데, QDIP는 시료의 표면에 수직 입사되는 IR에도 잘 반응함을 확인하였다. 이러한 두 가지 특성은 QDIP가 가질 것이라고 예상되던 QDIP의 가장 큰 장점으로, QDIP가 mid IR이나 far IR detector로서의 전망이 아주 밝음을 보여준다. 저온에서 QDIP의 responsivity는 수 A/W 로, 보통의 QWIP의 responsivity가 수십 mA/W인 것을 고려할 때, 충분히 큰 값이었다. QDIP의 responsivity가 이렇게 큰 이유는 photo-conductive gain이 1000 이상으로 매우 컸기 때문이었다. 반면에, 양자효율은 0.01% 이하로 아주 작았는데, 이것은 흡수 계수 자체보다는 흡수 두께가 작기 때문인 것 같고, 따라서 QDIP의 주기 수를 늘릴 필요가 있음을 알았다. Detector를 평가하는데 가장 중요한 것은 responsivity보다는 D*인데, photoconductive gain과 양자효율의 곱에 비례하는 responsivity는 $\sim$A/W로 충분히 컸지만, 반면에 D*는 $\sim$2E8으로 QWIP에 비해 작았다. 이것은 noise current가 컸기 때문이며 이를 줄이는 것이 중요하다. Noise current의 주된 요인이 dark current에 비례하는 g-r noise이므로, dark current를 줄이는 구조가 필요하다. 대표적인 예가 AlGaAs 같은 additional barrier를 넣어 dark current를 줄이는 방법이다. QDIP의 주기 수를 늘리는 것도 dark current를 줄이는 데 도움이 될 것이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.307-310
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• 1999

Using Se as a photoconductive element and ZnS as a luminescent element, a Se/ZnS thin film device for light amplifier applications was fabricated and its characteristics were investigated. The Se/ZnS thin film light amplifier was fabricated by evaporating the ZnS thin film on an ITO(Indium Tin Oxide) glass and the Se thin film on the ZnS thin film in sequence. The results of the characteristics investigation are summarized as follows: (1) When the frequency of an excitation voltage was increased, both the brightness response and the brightness saturation of the Se/ZnS thin film light amplifier began to start at a higher light input. (2) The gain of the Se/ZnS thin film light amplifier was dependent upon the amplitude and the frequency of the excitation voltage as well as an external light input. (3) When the Se/ZnS thin film light amplifier was excited by a direct current of a constant voltage, the frequency of the output brightness was\\`equal to the frequency of the input light applied. When the light amplifier was excited by a sinusoidal voltage of 60 Hz, the frequency of the output brightness was 120 Hz.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.329-329
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• 2007

Photoconductive poly crystalline lead oxide coated on amorphous thin film transistor (TFT) arrays is the best candidate for direct digital x-ray detector for medical imaging. Thicker films with lessening density often show lower x-ray induced charge generation and collection becomes less efficient. In this work, we present a new methodology used for the high density deposition of PbO. We investigate the structural properties of the films using X-ray diffraction and electron microscopy experiments. The film coatings of approximately $200\;{\mu}m$ thickness were deposited on $2"{\times}2"$ conductive-coated glass substrates for measurements of dark current and x-ray sensitivity. The lead oxide (PbO) films of $200\;{\mu}m$ thickness were deposited on glass substrates using a wet coating process in room temperature. The influence of post-deposition annealing on the characteristics of the lead oxide films was investigated in detail. X-ray diffraction and scanning electron microscopy, and atomic force microscopy have been employed to obtain information on the morphology and crystallization of the films. Also we measured dark current, x-ray sensitivity and linearity for investigation of the electrical characteristics of films. It was found that the annealing conditions strongly affect the electrical properties of the films. The x-ray induced output charges of films annealed in oxygen gas increases dramatically with increasing annealing temperatures up to $500^{\circ}C$ but then drops for higher temperature anneals. Consequently, the more we increase the annealing temperatures, the better density and film quality of the lead oxide. Analysis of this data suggests that incorporation and decomposition reactions of oxygen can be controlled to change the detection properties of the lead oxide film significantly. Post-deposition thermal annealing is also used for densely film. The PbO films that are grown by new methodology exhibit good morphology of high density structure and provide less than $10\;pA/mm^2$ dark currents as they show saturation in gain (at approximate fields of $4\;V/{\mu}m$). The ability to operate at low voltage gives adequate dark currents for most applications and allows voltage electronics designs.