Proceedings of the KOSOMBE Conference (대한의용생체공학회:학술대회논문집)

The Korean Society of Medical and Biological Engineering (대한의용생체공학회)
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Utilization of Photoconductive Gain Mechanism in Amorphous Silicon Radiation Detectors

비정질 실리콘 방사선 계측기에서의 Photoconductive Gain의 응용

  • Lee, H.K. (Department of Medical Engineering, Catholic University Medical College) ;
  • Suh, T.S. (Department of Medical Engineering, Catholic University Medical College) ;
  • Choe, B.Y. (Department of Medical Engineering, Catholic University Medical College) ;
  • Shinn, K.S. (Department of Medical Engineering, Catholic University Medical College) ;
  • Cho, G. (Department of Nuclear Engineering, Korea Advanced Institute of Science and Technology) ;
  • Perez-Mendez, V. (Physics Division, Lawrence Berkeley Laboratory)
  • 이형구 (가톨릭대학교 의과대학 의공학교실) ;
  • 서태석 (가톨릭대학교 의과대학 의공학교실) ;
  • 최보영 (가톨릭대학교 의과대학 의공학교실) ;
  • 신경섭 (가톨릭대학교 의과대학 의공학교실) ;
  • 조규성 (한국과학기술원 원자력공학과) ;
  • Published : 1997.05.23
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Abstract

The photoconductive gain mechanism in various types of hydrogenated amorphous silicon devices, such as p-i-n, n-i-n and n-i-p-i-n structures was investigated in connection with applications to radiation detection. We measured the photoconductive gain in two time scales: one for short pulses of visible light $(<1{\mu}sec)$ which simulate the transit of energetic charged particles, and the other for rather long pulses of light $(\sim1msec)$ which simulate x-ray exposure in medical imaging. We used two definitions of photoconductive gain: current gain and charge gain which is an integration of the current gain. We found typical charge gains of $3\sim9$ for short pulses and a few hundred for long pulses at a dark current density level of $10mA/cm^2$.

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