• Journal of Environmental Science International
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• v.1 no.1
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• pp.19-33
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• 1992

The high oxidants, which occur the daily maximum concentrations in the afternoon, are transported into the other region via long range transport mechanisms or trapped within the shallow mixing boundary layer and then removed physically (deposition, transport by mountain wind, etc.) and chemically (reaction with local sources). Therefore, modeling formation of photochemical oxidants requires a complex description of both chemical and meteorolog ital processecs . In this study, as a part of air quality studies, we reviewed various aspects of photochemical modeling on the basis of currently available literature. The result of the review shows that the model is based on a set of coupled continuity equations describing advection, diffusion, transport, deposition, chemistry, emission. Also photochemical oxidant models require a large amount of input data concerned with all aspects of the ozone life cycle. First, emission inventories of hydrocarbon and nitrogen oxides, with appropriate spatial and temporal resolution. Second, chemical and photochemical data allowing the quantitative description of the formation of ozone and other photochemically-generated secondary pollutants. Third, dry deposition mechanisms particularly for ozone, PAN and hydrogen peroxide to account for their removal by absorption on the ground, crops, natural vegetation, man-made and water surfaces. Finally, meteorological data describing the transport of primary pollutants away from their sources and of secondary pollutants towards the sensitive receptors where environmental damage may occur. In order to improve our present study, shortcomings and limitation of existing models are pointed out and verification Process through observation is emphasized.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.77-81
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• 2020

Resistive RAM (ReRAM) is a strong candidate for the next-generation nonvolatile memories which use the resistive switching characteristic of transition metal oxides. The resistive switching behaviors originate from the redistribution of oxygen vacancies inside of the oxide film by applied programming voltage. Therefore, controlling the oxygen vacancy inside transition metal oxide film is most important to obtain and control the resistive switching characteristic. In this study, we introduced an applying electric field into photochemical metal-organic deposition (PMOD) process to control the oxidation state of metal oxide thin film during the photochemical reaction by UV exposure. As a result, the surface oxidation state of FeOx film could be successfully controlled by the electric field-assisted PMOD (EFAPMOD), and the controlled oxidation states were confirmed by x-ray photoelectron spectroscopy (XPS) I-V characteristic. And the resistive switching characteristics with the oxidation-state of the surface region could be controlled effectively by adjusting an electric field during EFAPMOD process.

• Journal of the Korean Vacuum Society
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• v.3 no.2
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• pp.147-157
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• 1994

Valence or core electron excitations induced by Synchrotron radiation (SR) irradiation and ensuing chemical reactions can be applied for semiconductor processes i, e, deposition etching and modifications of thin film materials. Unique selectivity can be achieved by this photochemical reactions in deposition and etching. Some materials can be ecvaporated by SR irradiation which can be utilized for low temperature surface cleaning of thin films. Also SR irradiation significantly lowers the reaction temperature and photon activated surface reactions can be utilized for direct writing or projection lithography of electronic materials. This technique is especially effective in making nanoscale feature size with abrupt and well defined interfaces for next generation electronic devices.

• Environmental Sciences Bulletin of The Korean Environmental Sciences Society
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• v.1 no.1
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• pp.19-33
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• 1997

The high oxidants, which occur the daily maximum concentrations in the afternoon, are transported into the other region via long range transport mechanisms or trapped within the shallow mixing boundary layer and then removed physically (deposition, transport by mountain wind, etc.) and chemically (reaction with local sources). Therefore, modeling formation of photochemical oxidants requires a complex description of both chemical and meteorological processes. In this study, as a part of air quality studies, we reviewed various aspects of photochemical modeling on the basis of currently available literature. The result of the review shows that the model is based on a set of coupled continuity equations describing advection, diffusion, transport, deposition, chemistry, emission. Also photochemical oxidant models require a large amount of input data concerned with all aspects of the ozone life cycle. First, emission inventories of hydrocarbon and nitrogen oxides, with appropriate spatial and temporal resolution. Second, chemical and photochemical data allowing the quantitative description of the formation of ozone and other photochemically-generated secondary pollutants. Third, dry deposition mechanisms particularly for ozone, PAN and hydrogen peroxide to account for their removal by absorption on the ground, crops, natural vegetation, man-made and water surfaces. Finally, meteorological data describing the transport of primary pollutants away from their sources and of secondary pollutants towards the sensitive receptors where environmental damage may occur. In order to improve our present study, shortcomings and limitation of existing models are pointed out and verification process through observation is emphasized.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.13-17
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• 2014

The direct-patternable $SnO_2$ thin film was successfully fabricated by photochemical metal-organic deposition. The composition and chemical bonding state of $SnO_2$ thin film were analyzed by using X-ray photoelectron spectroscopy (XPS) from the surface to the interface with Si substrate. XPS depth profiling analysis allowed the determination of the atomic composition in $SnO_2$ film as a function of depth through the evolution of four elements of C 1s, Si 2p, Sn 3d, and O 1s core level peaks. At the top surface, nearly stoichiometric $SnO_2$ composition (O/Sn ratio is 1.92.) was observed due to surface oxidation but deficiency of oxygen was increased to the interface of patterned $SnO_2/Si$ substrate where the O/Sn ratio was about 1.73~1.75 at the films. This O deficient state of the film may act as an n-type semiconductor and allow $SnO_2$ to be applied as a transparent electrode in optoelectronic applications.

• Korean Journal of Materials Research
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• v.18 no.2
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• pp.98-102
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• 2008

The ferroelectric properties of UV irradiated and non-irradiated PZT films prepared via photochemical metal-organic deposition using photosensitive precursors were characterized. Fourier transform infrared spectroscopy showed that complete removal of organic groups was possible through UV exposure of the spin-coated PZT precursor films at room temperature. The measured remnant polarization values of UV-irradiated and non-irradiated PZT films after annealing at $650^{\circ}C$ were 29 and $23\;{\mu}C/cm^2$, respectively. The UV irradiation was found to be effective for the enhancement of the <111> growth orientation and ferroelectric property of PZT film and in the direct patterning in the fabrication of micro-patterned systems without dry etching.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.436-437
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• 2006

The $Ag/TiO_{2-x}N_x$ nanoparticles were synthesized by photochemical deposition in a $TiO_{2-X}N_X$ suspension system. The prepared products were characterized by means of XRD, Uv-vis and photoluminescence spectra (PL). Its photocatalytic activity was investigated by the decomposition of methylene blue (MB) solution under illumination of visible and ultraviolet light, respectively. Compared to $TiO_{2-x}N_x$, the photocatalytic activity of the as-prepared $Ag/TiO_{2-x}N_x$ is obviously enhanced due to the decreasing recombination of a photoexcitated electron-hole pairs. The Mechanism in which photocatalytic activity is enhanced has been discussed in detail.

• Journal of Environmental Impact Assessment
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• v.8 no.1
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• pp.1-16
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• 1999

The acid deposition and photochemical modeling study was performed on the Eastern Asia using Regional Acid Deposition Model(RADM). The results of this study show that horizontal distribution of $SO_2$, concentration and dry deposition flux was higher in Beking, Shanghai and central part of Korea. However distribution pattern of sulfate and $O_3$ concentration calculated by RADM were not similar to emission pattern. In daytime, $SO_2$, sulfate and $O_3$ were mixed to whole PBL but in nighttime because of inversion layer these pollutants were suppressed to lower level.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.336-336
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• 2008

• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.25-29
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• 2020

This study demonstrates direct-patternable amorphous TiO_x resistive switching (RS) device and the fabrication method using photochemical metal-organic deposition (PMOD). For making photosensitive stock solutions, Ti(IV) 2-ethylhexanoate was used as starting precursor. Photochemical reaction by UV exposure was observed and analyzed by Fourier transform infrared spectroscopy and the reaction was completed within 10 minutes. Uniformly formed 20 nm thick amorphous TiO_x film was confirmed by atomic force microscopy. Amorphous TiO_x RS device, formed as 6 × 6 ㎛ square on 4 ㎛ width electrode, showed forming-less RS behavior in ±4 V and on/off ratio ≈ 20 at 0.1 V. This result shows PMOD process could be applied for low temperature processed ReRAM device and/or low cost, flexible memory device.