• 제목/요약/키워드: Photo-mask

검색결과 93건 처리시간 0.023초

KOH를 이용한 Si 식각에서 IPA와 Ethanol을 사용한 경우의 표면 비교 (Morphology of Si Etching Structure Using KOH Solution with IPA and Ethanol)

  • 이귀덕;노용한
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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    • pp.123-124
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    • 2006
  • 본 연구에서는 KOH 용액을 사용한 Si 습식 이방성 식각실험 진행 후, 나타나는 표면의 거친 현상을 완화하는 데에 중점을 두고 연구를 진행하였다. 이를 위해 $SiO_2$ 웨이퍼 위에 Photo-lithography 공정으로 형성시킨 PMER 패턴을 Mask로 사용하여 HF 용액으로 $SiO_2$를 식각시켰으며, 형성된 $SiO_2$를 Mask로 사용하여 KOH 용액으로 Si을 식각시켰다. 이 때, KOH와 혼합하는 용액으로 IPA와 Ethan이을 각각 사용하여 실험을 진행하였으며, ESEM을 이용하여 표면을 비교하였다.

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광 다이오드를 가진 Microfluidic LOC 시스템 제작 (fabrication of the Microfluidic LOC System with Photodiode)

  • 김현기;신경식;김용국;이상렬;김태송;양은경;주병권
    • 한국전기전자재료학회논문지
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    • 제16권12호
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    • pp.1097-1102
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    • 2003
  • In this paper, we used only PR as etching mask, while it used usually Cr/AU as etching mask, and in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. we designed microchannel size width max 10um, min 5um depth max 10um, reservoir size max 100um, min 2mm. Fabrication of microfluidic devices in glass substrate by glass wet etching methods and glass to glass fusion bonding. The p-i-n diode has higher sensitivity than photodiode, Considering these results, we fabricated p-i-n diodes on the high resistive(4㏀$.$cm) wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of pin diode can be decreased by the application of finger pattern has parallel resistance structure from 571Ω to 393Ω.

Design of a Taper-Underlaid Spot-Size Converter with an Offset

  • Choi, Jun-Seok;Oh, Jin-Kyong;Lee, Dong-Hwan;Lee, Hyung-Jong;Kim, Sang-Duk
    • Journal of the Optical Society of Korea
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    • 제11권1호
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    • pp.40-43
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    • 2007
  • We propose a taper-underlaid spot-size converter (TU-SSC) with an offset which consists of two vertically stacked taper layers. The designed TU-SSC reduces coupling loss of a high index-contrast waveguide with $1.5%{\Delta}$ to a single mode fiber from 1.5 dB to 0.27 dB. We also considered the effects of mask misalignment in the fabrication process of TU-SSC, and optimized the design of TU-SSC so that the additional loss of TU-SSC for the mask misalignment of $3{\mu}m$ in the photo-lithography process was as low as 0.13 dB.

MEMS를 이용한 미세 열유속센서의 개발 (Development of Micro-machined Heat Flux Sensor by using MEMS technology)

  • 양훈철;송철화;김무환
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2004년도 춘계학술대회
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    • pp.1364-1369
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    • 2004
  • New method for the design, fabrication, and calibration of micro-machined heat flux sensor has been developed. Two types of micro-machined heat flux sensor having different thicknesses of the thermal-resistance layer are fabricated using the MEMS technique. Photo-resist patterning using a chrome mask, bulk-etching and copper-nickel sputtering using a shadow mask are applied to make heat flux sensors, which are calibrated in the convection-type heat flux calibration facility. The sensitivity of the device varies with thermal-resistance layer, and hence can be used to measure the heat flux in heat-transfer phenomena.

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Engineering of Bi-/Mono-layer Graphene Film Using Reactive Ion Etching

  • Irannejad, M.;Alyalak, W.;Burzhuev, S.;Brzezinski, A.;Yavuz, M.;Cui, B.
    • Transactions on Electrical and Electronic Materials
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    • 제16권4호
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    • pp.169-172
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    • 2015
  • Although, there are several research studies on the engineering of the graphene layers using different etching techniques, there is not any comprehensive study on the effects of using different etching masks in the reactive ion etching (RIE) method on the quality and uniformity of the etched graphene films. This study investigated the effects of using polystyrene and conventional photolithography resist as a etching mask on the engineering of the number of graphene layers, using RIE. The effects were studied using Raman spectroscopy. This analysis indicated that the photo-resist mask is better than the polystyrene mask because of its lower post processing effects on the graphene surface during the RIE process. A single layer graphene was achieved from a bi-layer graphene after 3 s of the RIE process using oxygen plasma, and the bi-layer graphene was successfully etched after 6 s of the RIE process. The bilayer etching time was significantly smaller than reported values for graphene flakes in previous research.

광조형법과 UV 포토리소그래피를 이용한 웨이브 마이크로펌프 미세 채널 제작 (Fabrication of Micro-channels for Wave-Micropump Using Stereolithography and UV Photolithography)

  • 노병국;김우식;심광보
    • 한국정밀공학회지
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    • 제24권12호
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    • pp.128-135
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    • 2007
  • Micro-channels for a wave micropump have been fabricated using the Stereolithography and UV Photolithography. The micro-channel with a channel height of $500\;{\mu}m$ was fabricated with stereolithography. UV photolithography was used for producing micro-channels with a channel length less than $100\;{\mu}m$. The fabrication process data including spinning rpm, pre-bake and post-bake time, and develop time for single layer and multiple layer 3D micro-structures using SU-8 photo resist are experimentally found. A film mask printed with a 40,000 dpi laser printer was used for UV lithography and micro-structures in the order of tens of micrometers in dimension were successfully fabricated.

Photo lithography을 이용한 플라즈마 에칭 가공특성에 관한 연구 (A study on processing characteristics of plasma etching using photo lithography)

  • 백승엽
    • Design & Manufacturing
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    • 제12권1호
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    • pp.47-51
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    • 2018
  • As the IT industry rapidly progresses, the functions of electronic devices and display devices are integrated with high density, and the model is changed in a short period of time. To implement the integration technology, a uniform micro-pattern implementation technique to drive and control the product is required. The most important technology for the micro pattern generation is the exposure processing technology. Failure to implement the basic pattern in this process cannot satisfy the demands in the manufacturing field. In addition, the conventional exposure method of the mask method cannot cope with the small-scale production of various types of products, and it is not possible to implement a micro-pattern, so an alternative technology must be secured. In this study, the technology to implement the required micro-pattern in semiconductor processing is presented through the photolithography process and plasma etching.

Facial 'Phi' Mask를 사용한 골격성 부정교합 환자의 안모 분석 (Facial Analysis of Patients with Skeletal Malocclusion Using a Facial 'Phi' Mask)

  • 김홍석;허영민;홍종락;김창수;팽준영
    • Maxillofacial Plastic and Reconstructive Surgery
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    • 제34권1호
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    • pp.26-33
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    • 2012
  • Purpose: The golden ratio has been used for a long time to objectify and quantify 'beauty'. Dr. Marqurardt claims that the golden ratio can be applied in the maxillofacial field as well. The purpose of this study was to evaluate the diagnostic significance of using a facial 'phi' mask for analyzing Korean faces with characteristics of Class I, II, and III malocclusion. Methods: We studied twenty five Korean celebrities' frontal facial photos (10 males, 15 females) and 90 malocclusion patients' frontal facial photos (30 patients in each malocclusion classification: Class I, Class II, and Class III). Patients who received orthodontic treatment at Samsung Medical Center were selected for this study. After superimposition of the selected facial photo and facial 'phi' mask using Adobe Photoshop CS3, the ratio of the entire facial area, mid facial area, lower facial area and horizontal and vertical lengths were measured. Results: The facial ratio in photos of Korean faces showed larger vertical and horizontal ratios than the facial 'phi' mask with golden ratio, regardless of skeletal malocclusion (entire face: 115%, lower face: 125% larger than the mask). The results of the frontal photos of Class I, II, and III malocclusion patients using facial 'phi' mask showed that the vertical length and frontal face area was more significantly influenced by the area of the lower face than the midface. This means that the lower face has larger proportions in the facial areas. Conclusion: The ratio of facial 'phi' mask is matched with the ideal facial appearance that the contemporary Korean general public is seeking. Thus, the facial 'phi' mask may be a convenient tool for esthetic analysis of Korean faces. Reducing the area of the lower face is esthetically more desirable for almost all Korean people when planning orthognathic surgery.

평판 디스플레이용 Laser Direct Imaging에 관한 연구( I ) (A Study on the Laser Direct Imaging for FPD ( I ))

  • Kang, H.S.;Kim, K.R.;Kim, H.W.;Hong, S.K.
    • 한국레이저가공학회:학술대회논문집
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    • 한국레이저가공학회 2005년도 추계학술발표대회 논문집
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    • pp.37-41
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    • 2005
  • When screen size of the Flat Panel Display (FPD) becomes larger, the traditional photo-lithography using photomasks and UV lamps might not be possible to make patterns on Photo Resist (PR) material due to limitation of the mask size. Though the maskless photo-lithography using UV lasers and scanners had been developed to implement large screen display, it was very slow to apply the process for mass-production systems. The laser exposure system using 405 nm semi-conductor lasers and Digital Micromirror Devices (DMD) has been developed to overcome above-mentioned problems and make more than 100 inches FPD devices. It makes very fine patterns for full HD display and exposes them very fast. The optical engines which contain DMD, Micro Lens Array (MLA) and projection lenses are designed for 10 to 50 ${\mu}m$ bitmap pattern resolutions. The test patterns for LCD and PDP displays are exposed on PR and Dry Film Resists (DFR) which are coated or laminated on some specific substrates and developed. The fabricated edges of the sample patterns are well-defined and the results are satisfied with tight manufacturing requirements.

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UV 차단 금속막을 이용한 잔류층이 없는 UV 나노 임프린트 패턴 형성 (UV-nanoimprint Patterning Without Residual Layers Using UV-blocking Metal Layer)

  • 문강훈;신수범;박인성;이헌;차한선;안진호
    • 마이크로전자및패키징학회지
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    • 제12권4호통권37호
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    • pp.275-280
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    • 2005
  • 나노 임프린트 (NIL)와 포토 리소그라피를 접목시킨 combined nanoimprint and photolithography (CNP) 기술을 이용하여 나노 미세 패턴을 형성하였다. 일반적인 UV-NIL 스탬프의 양각 패턴 위에 Cr 금속막을 입힌 hybrid mask mold (HMM)을 E-beam writing과 plasma etching으로 제작하였다. HMM 전면에는 친수성 물질인 $SiO_2$를 코팅하여 점착방지막 역할의 self-assembled monolayer(SAM) 형성을 용이하게 함으로써 HMM과 transfer layer의 분리를 용이하게 하여 패턴 손상을 억제하였다. 또한, transfer layer에는 일반적인 monomer resin 대신에 건식 에칭에 대한 저항력이 높은 negative PR을 사용하였다. Photo-mask 역할을 하는 HMM의 Cr 금속막이 UV를 차단하여 잔류하게 되는 PR의 비경화층(unexpected residual layer)은 간단한 현상 공정으로 제거하여 PR 잔류층이 없는 나노 미세 패턴을 transfer layer에 형성하였다.

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