• Title/Summary/Keyword: Photo-current

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Evaluation of Thin-Film Photodevices and Development of Artificial Retina

  • Kimura, Mutsumi;Shima, Takehiro;Yamashita, Takehiko;Nishizaki, Yoshitaka;Hara, Hiroyuki
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1745-1748
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    • 2007
  • First, thin-film photodevices are evaluated, and a p/i/n thin-film phototransistor (TFPT) is recommended because the photo-induced current is relatively high and independent of the applied voltage. Next, an artificial retina is developed using the p/i/n TFPTs, and it is found that it can detect photo illuminance profile with sensitivity control.

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Detailed Analysis of the KAERI nTOF Facility

  • Kim, Jong Woon;Lee, Young-Ouk
    • Journal of Radiation Protection and Research
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    • v.41 no.2
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    • pp.141-147
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    • 2016
  • Background: A project for building a neutron time-of-flight (nTOF) facility is progressing. We expect that the construction will start in early 2016. Before that, a detailed simulation based on the current architectural drawings was performed to optimize the performance of our facility. Materials and Methods: Currently, several parts had been modified or changed from the original design to reflect requirements such as the layout of the electron beam line, shape of the vacuum chamber producing a neutron beam, and the underground layout of the nTOF facility. Detailed analysis for these modifications has been done with MCNP simulation. Results and Discussion: An overview of our photo-neutron source and KAERI nTOF facility were introduced. The numerical simulations for heat deposition, source term, and radiation shielding of KAERI nTOF facility were performed and the results are discussed. Conclusion: We are expecting that the construction of the KAERI nTOF facility will start in early 2016, and these results will be used as basic data.

Characteristics of Sulfide Treated GaAs MISFETs with Photo-CVD Grown $P_3$$N_5$ Gate Insulators (유화처리와 광CVD법 질화인막을 이용한 GaAs MISFET 특성)

  • 최기환;조규성;정윤하
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.9
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    • pp.72-77
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    • 1994
  • GaAs MISFETs, with photo-CVD grown P$_{3}$N$_{5}$ gate insulator and sulfide treatment, have been fabricated and showed the instability of drain current reduced less than 22 percent for the period of 1.0s~1.0${\times}10^{4}s$. The effective electron mobility and extrinsic transconductance of the device are about 1300cm$^{2}$/V.sec and 1.33mS at room temperature. The C-V characteristics of GaAs MIS Diode and AES analysis are also discussed with respect to effect of sulfide treatment conditions.

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The Effect of Sealing Technology on the Long-Term Stability of Dye-Sensitized Solar Cell Module (염료감응 태양전지 모듈의 장기안정성 향상을 위한 실링기술 연구)

  • Lee, Kwangsoo;Ko, Min Jae
    • Current Photovoltaic Research
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    • v.4 no.4
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    • pp.155-158
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    • 2016
  • Long-term stability of dye-sensitized solar cell (DSSC) module is critical for the commercialization. We investigated the effect of sealing technology on the long-term stability of the $10cm{\times}11cm$ sized DSSC modules. We applied the concept of secondary sealing to the module and then performed several stability tests such as humidity cycle, 1 sun light soaking and outdoor stability tests. The enhanced stability was confirmed for the DSSC module employing optimized sealing materials and architectures.

Fabrication of a Hydrogenated a-Si Photodiode

  • Hur, Chang-Wu
    • Journal of information and communication convergence engineering
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    • v.1 no.1
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    • pp.23-26
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    • 2003
  • A photodiode capable of obtaining a sufficient photo/dark current ratio at both a forward bias state and a reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as a schottky barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. Growth of high quality alumina($Al_{2}O_{3}$) film using anodizing technology is proposed and analyzed by experiment. We have obtained the film with a superior characteristics

Research Trends in Heavy-Metal-Free Quantum Dot Sensitized Solar Cells (무독성 양자점 감응형 태양전지 연구동향)

  • Kim, Jae-Yup;Ko, Min Jae
    • Current Photovoltaic Research
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    • v.3 no.4
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    • pp.126-129
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    • 2015
  • Over the last two decades, quantum dot (QD) solar cells have attracted much attention due to the unique properties of QDs, including band gap tunability, slow hot electron cooling, and multiple exiton generation effect. However, most of the QDs employed in photovoltaic devices contain toxic heavy-metals such as cadmium or lead, which may limit the commercial application. Therefore, recently, heavy-metal-free QDs such as Cu-In-S or Cu-In-Se have been developed for application in solar cells. Here, we review the research trends in heavy-metal-free QD solar cells, mainly focusing on Cu-In-Se QD-sensitized solar cells (QDSC).

Study on T-Type Multi Level Inverter for UIPV System (계통연계형 태양광발전 시스템을 위한 T-타입 타상 인버터에 관한 연구)

  • Bayasgalan, Bayasgalan;Ryu, Ji-Su;Lee, Sang-Ho
    • Proceedings of the KIPE Conference
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    • 2012.07a
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    • pp.313-314
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    • 2012
  • In this paper presents study of T-Type multi level inverter for utility interactive photo voltaic inverter. In order to increase efficiency and performance of utility interactive photo voltaic (UIPV) system, we propose multi level PCS topology, such as T-type inverter. The control algorithm for utility interactive inverter is implemented by simulation and experimentation, which includes dc-bus and midpoint voltage controller, ac-grid current controller and PLL algorithm.

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Photolithographic patterning and passivation of P3HT organic thin film transistors with photo-sensitive polyvinylalcohol(PVA) layers (감광성 PVA 박막을 이용한 P3HT 유기박막트랜지스터의 포토리소그래피 패터닝과 패시베이션)

  • Nam, Dong-Hyun;Han, Kyo-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.191-191
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    • 2007
  • By employing a photo-sensitive PVA as a photoresist, we first demonstrated simultaneous patterning and passivation of P3HT active layer. The passivation layers were obtained by annealing the organic layers after developing PVA and over-etching the P3HT layer. The fabricated OTFTs were electrically characterized. The OTFTs after the passivation exhibited the field-effect of ${\sim}5.9{\times}10^{-4}cm^2/V{\cdot}s$, on/off current ratio of ${\sim}10^3$. The value of OTFTs a little degradation with time in air but it appeared different unpassivated OTFT.

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Recognition of Passports using Enhanced Neural Networks and Photo Authentication (개선된 신경망과 사진 인증을 이용한 여권 인식)

  • Kim Kwang-Baek;Park Hyun-Jung
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.10 no.5
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    • pp.983-989
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    • 2006
  • Current emigration and immigration control inspects passports by the naked eye, registers them by manual input, and compares them with items of database. In this paper, we propose the method to recognize information codes of passports. The proposed passport recognition method extracts character-rows of information codes by applying sobel operator, horizontal smearing, and contour tracking algorithm. The extracted letter-row regions is binarized. After a CDM mask is applied to them in order to recover the individual codes, the individual codes are extracted by applying vertical smearing. The recognizing of individual codes is performed by the RBF network whose hidden layer is applied by ART 2 algorithm and whose learning between the hidden layer and the output layer is applied by a generalized delta learning method. After a photo region is extracted from the reference of the starting point of the extracted character-rows of information codes, that region is verified by the information of luminance, edge, and hue. The verified photo region is certified by the classified features by the ART 2 algorithm. The comparing experiment with real passport images confirmed the good performance of the proposed method.

Design of Readout Circuit with Dual Slope Correction for photo sensor of LTPS TFT-LCD (LTPS TFT LCD 패널의 광 센서를 위한 dual slope 보정 회로)

  • Woo, Doo-Hyung
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.6
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    • pp.31-38
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    • 2009
  • To improve the image quality and lower the power consumption of the mobile applications, it is the one of the best candidate to control the backlight unit of the LCD module with ambient light. Ambient light sensor and readout circuit were integrated in LCD panel for the mobile applications, and we designed them with LTPS TFT. We proposed noble start-up correction in order to correct the variation of the photo sensors in each panel. We used time-to-digital method for converting photo current to digital data. To effectively merge time-to-digital method with start-up correction, we proposed noble dual slope correction method. The entire readout circuit was designed and estimated with LTPS TFT process. The readout circuit has very simple and stable structure and timing, so it is suitable for LTPS TFT process. The readout circuit can correct the variation of the photo sensors without an additional equipment, and it outputs the 4-levels digital data per decade for input luminance that has a dynamic range of 60dB. The readout rate is 100 times/sec, and the linearity error for digital conversion is less than 18%.