• 제목/요약/키워드: Photo resist

검색결과 102건 처리시간 0.035초

반도체 전공정의 하드마스크 스트립 검사시스템 개발 (Development of Hard Mask Strip Inspection System for Semiconductor Wafer Manufacturing Process)

  • 이종환;정성욱;김민제
    • 반도체디스플레이기술학회지
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    • 제19권3호
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    • pp.55-60
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    • 2020
  • The hard mask photo-resist strip inspection system for the semiconductor wafer manufacturing process inspects the position of the circuit pattern formed on the wafer by measuring the distance from the edge of the wafer to the strip processing area. After that, it is an inspection system that enables you to check the process status in real time. Process defects can be significantly reduced by applying a tester that has not been applied to the existing wafer strip process, edge etching process, and wafer ashing process. In addition, it is a technology for localizing semiconductor process inspection equipment that can analyze the outer diameter of the wafer and the state of pattern formation, which can secure process stability and improve wafer edge yield.

평판 디스플레이 세정을 위한 상압 플라즈마 에싱효과에 관한 연구 (A Study on Ashing Effects of Atmospheric Plasma for the Cleaning of Flat Panel Display)

  • 허용정;이건영
    • 반도체디스플레이기술학회지
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    • 제7권2호
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    • pp.35-38
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    • 2008
  • This study shows the improvement of PR-Ashing rates in semi-conductor process using Atmospheric Plasma. Taguchi method is used to improve Ashing rates of photo-resist that is spread on the surface of a wafer. Improvement of Ashing rates is acquired through the decision of the effective factors and suitable combination of the factors. The results show the contribution rate of each factor and the effectiveness of Plasma for PR-Ashing process in this system.

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동박과 PSR간의 접합력 향상에 관한 연구 (Study on the Improvement of Adhesion between Cu Laminate and PSR)

  • 김경섭;정승부;신영의
    • Journal of Welding and Joining
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    • 제17권2호
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    • pp.61-65
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    • 1999
  • Because of the need for packages which accommodate high pin count, high density and high speed device, PBGA(plastic ball grid array) package gets more spotlight. But the substrate material which is used for PBGA package is in nature susceptible to moisture penetration. The objective of the study is to find out the path of delamination in the stacked structure of substrate. To increase the adhesion between the cooper laminate and PSR(photo solder resist) which is the weakest part, experiments were performed by changing parameters of printing pre-treatment and post-treatment process. As a result of experiments, the factor effects on the adhesion between the cooper laminate and PSR is caused by all of the pre-treatment and post-treatment condition. A considerable change was observed depending on the amount of UV irradiation after thermal cure which is typical of printing post-treatment condition rather than pre-treatment condition.

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차세대 FPD 노광장비용 정렬계 설계

  • 송준엽;김동훈;정연욱;김용래;구형욱
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2004년도 춘계학술대회 논문요약집
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    • pp.223-223
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    • 2004
  • 반도체 및 TFT LCD 제조 공정에서 핵심 공정인 Photo 공정은 PR(Photo Resist, 감광액) Coating -) Exposure(노광) -. Develop(현상)으로 이루어져 있다. 이중 Exposure 공정에 사용되는 장치가 노광장비이다. 노광장비는 Mask Aligner 라고도 불리는데, 그만큼 정렬기술이 노광장비에서는 중요하다. 반도체 및 TFT LCD 는 여러 충의 회로를 쌓아감으로써 층과 층간의 전기적 작용으로 생성되는 Tr.(Transistor) 또는 Diode 등의 수동소자를 집적하는 기술로 제조되는 것으로, 층과 층간의 전기적 작용이 설계한 바와 같이 이루어지기 위해선, 층과 층 사이의 정렬이 정확히 이루어져야 한다.(중략)

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코팅 공정에서 공기를 고려한 코터형상 및 운전조건에 따른 코팅현상 해석 (Computer Simulation of Coating Behavior Including Air for Various Coater Geometries and Operational Conditions)

  • 김혜연;류민영;최종근
    • 소성∙가공
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    • 제18권2호
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    • pp.156-159
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    • 2009
  • Slot coating has been wide spread in photo-resist coating on the glass for liquid crystal display. Die in slot coater consists of manifold and land. Material comes in inlet of the die and flow into the manifold and then flow out through the land. The coating thickness variations along the die length depend upon inside of die design such as manifold and die land. However the coating thickness variations along the moving direction(coating direction) of the coater depend upon the operational conditions of coater as well as die lip design. The coating behaviors including atmospheric air have been investigated in this study. Die geometries considered in this study were nozzle gap and length of the die lip. Coating gap and coating speed were the variables fur coating operational conditions. When the nozzle gap and length of die lip increased climbing effect of PR on the downstream die lip was reduced. Subsequently uniformity of coating thickness improved. Uniformity of coating thickness also enhanced as coating gap and coater speed increased. The uniformity of coating gap was related to the velocity vector distributions on the coating surface.

원통금형의 전자빔 가공을 위한 PR 코팅 및 측정 팁을 이용한 두께측정 (PR Coating for Electron Beam Lithography of Cylindrical Mold and Measuring Coating Thickness of It using Measuring Tip)

  • 이승우;김정오;서정
    • 한국정밀공학회지
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    • 제29권10호
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    • pp.1144-1148
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    • 2012
  • Process conditions for generating nano patterns handle different process according to the pattern characteristics, and different process data according to patterns in questions. To efficiently find optimal process conditions for generating nano patterns, process data by experiment is needed consideration of the pattern characteristics concerning the equipment. In particular, coating methods of a cylindrical mold differ from it of a flat plate because of viscosity of coating materials. Also the coating thickness affects nano process and pattern line width. So coating method of coating thickness for cylindrical mold is very important on nano pattern generating. In this study, a method is proposed for coating Photo Resist through the spray in order to coat cylindrical mold and measuring the thickness of coating using measuring tip considering the size of cylindrical mold because there is no method in the existing SEM. The proposed method is applied to a real printed electronics system to verify its accuracy and efficiency.

The fabrication of TFTs for LCD using the 3mask process

  • Yoo, Soon-Sung;Cho, Heung-Lyul;Kwon, Oh-Nam;Nam, Seung-Hee;Chang, Yoon-Gyoung;Kim, Ki-Yong;Cha, Soo-Yeoul;Ahn, Byung-Chul;Chung, In-Jae
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.948-951
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    • 2005
  • New technology that reduces photolithography process steps from 4 to 3 in fabrication of TFT LCD is introduced. The core technology for 3mask-TFTs is the lift-off process [1], by which the PAS and PXL layer are formed simultaneously. To evaluate the stability of this lift-off process, outgases from photo resist on a substrate during ITO deposition and the quality of ITO film were analyzed and the conventional photo resist stripper machine which operates lift-off process was examined to see its ability to reduce particle problems of the machine. Through the development of total process and design for TFTs using this 3mask technology, panels in TN and IPS modes which exhibit same performances of a display using a conventional process were achieved. In addition, this process was already verified in the mass production line and now some products are being produced by the 3mask technology.

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