• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.441-443
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• 1995

A new optical-resistive voltage divider, which consists of light emitting diode, optic fiber, PIN-photo diode and a high qualify shielding resistive divider, whose total response time is 7.35 [ns], has been obtained. The optical to electrical signal converter was constructed with GaAsP series light emitting diode. The response characteristics have been verified by applying the Marx impulse voltage generator experimentally. Comparing with the performance of conventional resistive voltage divider, the characteristics of the proposed optical-resistive voltage divider are more excellent in step response and less sensitive to electromagnetic interference.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.2
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• pp.86-91
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• 2010

We constructed a quasi-distributed fiber-optic sensor network for the safety monitoring in power systems. It is possible to construct many of FBG sensors in a line and to be immune from electromagnetic noise. For demodulation analysis of reflected wavelength from FBG sensor, we proposed a simple and fast system using a InGaAs photo-diode array and a holographic diffraction grating. For accuracy improvement of the proposed demodulation system, we applied a Gaussian line-fitting algorithm. We obtained about 4[pm] of wavelength resolution and stability.

• Journal of Electrical Engineering and Technology
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• v.8 no.5
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• pp.1169-1174
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• 2013

The objective of this work was to increase the efficiency of ultraviolet-light emitting diodes at 375 nm for sterilization. Since $TiO_2$ had antibacterial properties, which were attributed to the appearance of hydroxyl radicals and superoxide radical anions on the surface species under ultra violet radiation at about 387 nm, photo-reactive layers such as Ag-doped $TiO_2$ were coated on aluminum substrates by electrostatic spraying. Crystallinity and surface morphology of the coating layer were examined by X-ray diffraction ${\theta}-2{\theta}$ scan and field emission-scanning electron microscope, respectively. In an antibacterial test, we observed above 99% reduction of Escherichia coli populations on 3 or 5 mol% Ag-doped $TiO_2$ layers after irradiation for 2 hrs at 375 nm, while very low inactivation on bare aluminum substrates occurred after irradiation as the same condition.

• Journal of Sensor Science and Technology
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• v.18 no.6
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• pp.475-484
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• 2009

In this paper, an analysis of the complementary CMOS active pixel and readout circuit is carried out. Complementary pixel structure which is different from conventional 3TR APS structure consists of photo diode, reset PMOS, several NMOSs and PMOSs sets for complementary signals. Proposed CMOS image sensors pixel has been fabricated using 0.5 standard CMOS process. Measured results show that the output signal range is from 0.8 V to 3.8 V. This output signal range increased 125 % compared to conventional 3TR pixel in the condition of 5 V power supply.

• Journal of Advanced Navigation Technology
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• v.13 no.1
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• pp.34-40
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• 2009

The phase delay of output signal of APD(avalanche photo diode) caused by intensity of reflected light which comes from target. These difference of phase delay is an one of the main reason of measurement error, but there is no reasonable measurement meter and method to detect it. In this paper, to solve the problem, we propose and implement a method to measure the intensity of radiation. The method measures DC voltage which is proportional to the reflected intensity of radiation and come out from APD in receiver by realtime.

• Journal of Information Display
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• v.13 no.3
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• pp.119-123
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• 2012

In this work, we report on a new monitoring method for an organic light-emitting diode (OLED) panel for lighting by optical sensing of the wave-guided light in the substrate. Using microlens array films, the wave-guided light was extracted into the edge or back side of the panel to be monitored by a photodiode. The luminance of the extracted light was measured as linearly proportional to the front light. Thus, by converting the extracted light into photo voltage, monitoring the luminance change occurring in the OLED is possible. Based on the results and concepts, we have proposed a photodiode-equipped driving circuit which can generate compensated driving current for uniform luminance of OLED panels.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.6
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• pp.510-514
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• 2005

We have investigated the excitation-light source dependence of photo-catalytic efficiency for the benzene removal. The photo-catalytic module for the benzene removal is fabricated by a combination of GaN-based ultraviolet light-emitting diode (UV GaN-LED) and $TiO_2$ thin film coated on an aluminum plate. The benzene reduction rates of 365 nm and 375 nm modules at 60 mA junction current are approximately $8.95\;\%/Hr$ and $9.2\;\%/Hr$, respectively, which indicates that 365 nm GaN-LED is more effective than 375 nm GaN-LED. The benzene reduction efficiency is also noticeably dependent on the excitation wavelength and excitation-light power, as well as it is increased with the shorter wavelength and higher excitation power. This result exhibits that UV GaN-LED is useful to remove the volatile organic compounds (VOCs) existing in the environment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.906-911
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• 2004

In this paper, we used only PR as etching mask, while it used usually Cr/AU as etching mask, and in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. we designed microchannel size width max 10um, min 5um depth max 10um, reservoir size max 100um, min 2mm. Fabrication of microfluidic devices in glass substrate by glass wet etching methods and glass to glass fusion bonding. The p-i-n diode has higher sensitivity than photodiode. Considering these results, we fabricated p-i-n diodes on the high resistive($4k{\Omega}{\cdot}cm$) wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of p-i-n diode can be decreased by the application of finger pattern has parallel resistance structure from $571\Omega$ to $393\Omega$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.2
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• pp.330-336
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• 2007

A single pixel photon counting type image sensor which is applicable for medical diagnosis with digitally obtained image and industrial purpose has tern designed with $0.18{\mu}m$ triple-well CMOS process. The designed single pixel for readout chip is able to be operated by single supply voltage to simplify digital X-ray image sensor module and a preamplifier which is consist of folded cascode CMOS operational amplifier has been designed to enlarge signal voltage(${\Delta}Vs$), the output voltage of preamplifier. And an externally tunable threshold voltage generator circuit which generates threshold voltage in the readout chip has been newly proposed against the conventional external threshold voltage supply. In addition, A dark current compensation circuit for reducing dark current noise from photo diode is proposed and 15bit LFSR(Linear Feedback Shift Resister) Counter which is able to have high counting frequency and small layout area is designed.

• Korean Journal of Optics and Photonics
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• v.13 no.5
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• pp.384-389
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• 2002

A new idea of the wavelength locking module for DWDM application was investigated in the present research. Only one etalon photo-diode is generally used in the internal/external wavelength locking system. For the internal wavelength locking module with 50 GHz applications, an algle tuning method of the etalon commonly applied. However, the alignment process of the etalon with the angle tuning method is limited because the lock performance is extremely sensitive accoriding to the change of the tilting angle. In an optical viewpoint, the alignment tolerance of the locker module with the etalon PD array block was good, and the precise tuning of the wavelength was possible. The characteristics of free spectral range (FSR) and peak shift of wavelength according to the tilting angle with the locker module was investigated. For the present module, the optimized initial tilting angle was experimentally obtained.