• Journal of the Microelectronics and Packaging Society
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• v.21 no.3
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• pp.67-71
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• 2014

An attempt to grow high quality GaN on silicon substrate using metal organic chemical vapor deposition (MOCVD), herein GaN epitaxial layers were grown on various Si(111) substrates. Thin Platinum layer was deposited on Si(111) substrate using sputtering, followed by thermal annealing to form Pt nano-clusters which act as masking layer during dry-etched with inductively coupled plasma-reactive ion etching to generate nano-patterned Si(111) substrate. In addition, micro-patterned Si(111) substrate with circle shape was also fabricated by using conventional photo-lithography technique. GaN epitaxial layers were subsequently grown on micro-, nano-patterned and conventional Si (111) substrate under identical growth conditions for comparison. The GaN layer grown on nano-patterned Si (111) substrate shows the lowest crack density with mirror-like surface morphology. The FWHM values of XRD rocking curve measured from symmetry (002) and asymmetry (102) planes are 576 arcsec and 828 arcsec, respectively. To corroborate an enhancement of the growth quality, the FWHM value achieved from the photoluminescence spectra also shows the lowest value (46.5 meV) as compare to other grown samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• Restorative Dentistry and Endodontics
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• v.12 no.2
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• pp.45-53
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• 1987

The purpose of this study was to evaluate the tensile bond strength between composite resin and the human enamel. Three composite resin systems, two chemical (Clearfil Posterior, and Clearfil Posterior-3) and one light cure (Photo Clearfil-A), used with and without an intermediate resin (clearfil bonding agent), were evaluated under different amounts of load (10g, 200g and 200g for a moment) for in vitro tensile bond strength to acid-eched human enamel. Clinically intact buccal or lingual surfaces of 144 freshly extracted human permanent molars, embedded in acrylic were flattened with No #600 carborundum discs. Samples were randomly assigned to the different materials and treatments using a table of random numbers. Eight samples were thus prepared for each group(Table 2) these surfaces were etched with an acid etchant (Kurarey Co. Japan) in a mode of etching for 30 seconds, washing for 15 seconds, and drying for 30-seconds. During the polymerization of composite resin on the acid-etched enamel surfaces with and without bonding agent 10-gram, 200 gram and temporary 200 gram of load were applied. The specimens were stored in 50% relation humidity at $37^{\circ}C$ for 24 hours before testing. An universal Testing machine (Intesco model No. 2010, Tokyo, Japan) was used to apply tensile loads in the vertical directed (fig 5), and the force required for separation was recorded with a cross head speed of 0.25 mm/min and 20 kg in full scale. The results were as follow: 1. The tensile bond strength was much greater in applying a bonding agent than in not doing that. 2. The tensile bond strength of chemical cure composite resin was higher than that of light cure composite resin with applying on bonding agent on the acid-etched enamel. 3. In case of not applying a bonding agents on the acid-etching enamel, the highest tensile bond strength under 200 gram of load was measured in light cure composite resin. 4. The tensile bond strength under 200-gram of load has no relation with applying the bonding agent. 5. Under the load of 10-gram, There was significant difference in tensile bond strength as applying the bonding agent.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.10
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• pp.671-677
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• 2001

A RuO$_2$ Schottky photo-detector was designed and fabricated with GaN layers on the sapphire substrate. For good absorption of UV light, an epitaxial structure with undoped GaN(0.5 ${\mu}{\textrm}{m}$)/n￣-GaN(0.1${\mu}{\textrm}{m}$)/n＋-GaN(1.5${\mu}{\textrm}{m}$) was grown by MOCVD. The structure had the carrier concentrations of 3.8$\times$10$^{18}$ cm￣$^3$, the mobility of 283$\textrm{cm}^2$/V.s. After ECR etching process for mesa structure with the diameter of about 500${\mu}{\textrm}{m}$, Al ohmic contact was formed on GaN layer. After proper passivation between the contacts with Si$_3$/N$_4$, was formed on undoped GaN layer. The fabricated Schottky diode had a specific contact resistance of 1.15$\times$10$^{-5}$ ［$\Omega$.$\textrm{cm}^2$］. It has a low leakage current of 305 pA at -5 V, which was attributed by stable characteristics of RuO$_2$ Schottky contact. In optical measurement, it showed the high UV to visible extinction ratio of 10$^{5}$ and very high responsivity of 0.23 A/W at the wavelength of 365nm.

• Elastomers and Composites
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• v.40 no.2
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• pp.93-103
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• 2005

In this study, surface treatment of the elastomeric matrix was investigated to develop a substituting material for steel dynamic damper of automobile. The key technology is to get ultra high density elastomeric compound in order to substitute steel dynamic damper. The optimum matrix material(chloroprene rubber) and filler(metal powder) were selected for this. The several properties of elastomeric compound were examined. According to the results, the $t_{s2}$ of filled elastomeric compound was decreased with increasing the filler loading whereas the $t_{90}$ was increased. Also, tensile strength and rebound resilience were decreased with filler loading. To solve the problem of high filler loading, the photo grafting technique was employed on elastomeric matrix. The degree of grafting was determined by FTIR-ATR. Also, the filler surface was modified by chemical etching and the surface morphology was examine by SEM. After chemical treatment of filler, the particle size analyzer was used to examined the particle size, size distribution, and morphology of the modified filler.

• Air Cleaning Technology
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• v.17 no.4 s.67
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• pp.39-57
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• 2004

첨단산업으로 불리는 반도체, LCD, PDP, 유기EL(OLED) 등의 생산 공정은 고도의 청정상태를 요구하며, 때문에 이들의 생산공정 중 대부분이 클린룸 내에서 이루어진다. 클린룸 내에서의 주요공정은 크게 박막형성(Layering), 노광(Photo Lithography), 식각(Etching) 등 3가지 공정으로 나눌 수 있으며, 반도체 제조공정의 경우 특별히 도핑(Doping) 공정이 추가된다. 오염물질을 함유하는 클린룸 배기는 일반적으로 산, 알칼리, Toxic(PFCs, Flammable), VOC 등으로 분류하며, 각각의 배기는 각 배기특성에 맞는 오염제어 장치를 통해, 정화된 후, 대기로 방출된다. 산, 알칼리 배기는 일반적으로 최종 단계에서 중앙집중식 습식스크러버에 의해 흡수, 중화 처리되며, VOC의 경우 농축기(Concentrator) & 축열식 열 산화장치(RTO) 설비에 의해 연소 처리된다. 하지만 CVD공정으로부터의 배기가 주를 이루는 Toxic배기의 경우, 다량의 PFCs(과불소화합물) 가스를 함유하고 있는 이유로, 대부분 클린룸 내부에 P.O.U(Point of use) 처리장치가 설치되며, P.O.U에 의해 1차 처리된 후 최종적으로 중앙집중식 습식스크러버를 거쳐 대기로 방출된다. 알칼리배기의 주성분으로는 암모니아($NH_3$), HMDS (Hexa Methyl DiSilazane), TMAH (Tetra Methyl Ammonium Hydroxide), LGL, CD 등이며 흡수액에 황산(Sulfuric Acid)용액을 공급, 중화처리하고 있다. 탄소성분을 먹이로 하는 미생물의 번식에 의한 막힘 문제를 제외하고는 큰 문제가 없다. 하지만 Toxic배기 및 산배기의 경우 처리효율이, 가스흡수 이론에 의한 계산결과와 비교할 때, 매우 저조하게 나타나는 효율부족 현상을 겪고 있으며, 이는 잔여 PFCs 가스성분 및 반응에어로졸, 응축에어로졸 등의 영향으로 추정하고 있다. 최근 Toxic 배기의 경우, P.O.U 설비를 Burn & Wet type으로 변경하여, 배기 중 PFCs 및 반응에 에어로졸($SiO_2$)의 농도를 원천적으로 감소시키는 노력이 진행 중이다. 산배기의 경우, 산결로 현상에 의한, 응축에어로졸이 문제가 되고 있으나 내식열교환기(Anti-Corrosive Heat Exchanger), 하전액적스크러버 시스템(Charged Droplets Scrubber System), Wet ESP(Wet Electrostatic Procipitator) 등의 도입을 통해 문제해결을 위한 노력을 경주하고 있다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.5
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• pp.1011-1016
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• 2001

In this paper, a narrow-band bandpass filter using microstrip open-loop resonators with coupled and crossing lines is designed and fabricated. This filter has many advantages such as compact in size, low weight and the characteristic of the elliptic-function narrow-band bandpass filtering. The configuration consists of two identical microstrip open loop resonators, coupled line and crossing line. By using open loop resonators, the size of the filter can be reduced about 50% compared with the ring resonators. A crossing line gives two notchs in the stopband, which have sharp selectivity in the passband. Centered at 2.455GHz, the calculated microstrip bandpass filter shows a bandwidth of 1.22%, which makes it very attractive for application in the wireless LAN. The filter is fabricated by photo-etching process. The fabricated bandpass filter shows that the bandwidth is 0.85% for 2.458GHz and the size is only $2.6cm\times1cm$.

• Korean Chemical Engineering Research
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• v.45 no.5
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• pp.493-499
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• 2007

Polymeric hydrogel particles were fabricated to demonstrate the scale-up possibilities with the Particle Replication In Non-wetting Templates (PRINT) process. A permanently etched, specifically designed master was made on a silicon wafer using conventional photolithography, then reactive ion etching. The master and substrate were used repeatedly to make a large number of identical elastomeric perfluoropolyethers (PFPE) replica molds. The PFPE replica molds were used to fabricate and harvest individual, monodisperse micron-sized particles using the PRINT process. A water-soluble polymer adhesive was used as a sacrificial layer for harvesting particles. Particles were composed of biodegradable poly (ethylene glycol) diacrylate (PEG-diA), and aminoethylacrylate (AEM) and 2-acryloxyethyltrimethyl ammonium chloride (AETMAC) were added to them for improving the uptake of the cells. This study suggested PRINT used to produce the uniformed and shape specific biodegradable polymer is the effective technique for the non viral vector for the drug and the gene delivery.

• Transactions of the Korean hydrogen and new energy society
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• v.13 no.3
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• pp.224-232
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• 2002

CdS-$TiO_2$ nano-composite sol was prepared by the sol-gel method in organic solvents at room temperature and further hydrothermal treatment at various temperatures to control the physical properties of the primary particles. Again, CdS-$TiO_2$ composite particulate films were made by casting CdS-$TiO_2$ sols onto $F:SnO_2$ conducting glass and then heat-treatment at $400^{\circ}C$. Physical properties of these 61ms were further controlled by the surface treatment with $TiCl_4$, aqueous solution. The photo currents and hydrogen production rates measured under the experimental conditions varied according to the $CdS/[CdS+TiO_2]$ mole ratio and the mixed-sol preparation method. For $CdS-TiO_2$ composite sols prepared in IPA, CdS particles were homogeneously surrounded by $TiO_2$ particles. Also, the surface treatment with $TiCl_4$ aqueous solution caused a considerable improvement in the photocatalytic activity, probably as a result of close contacts between the primary particles by the etching effect of $TiCl_4$. It was found that the photoelectrochemical performance of these particulate films could be effectively enhanced by this approach.

• Bulletin of the Korean Chemical Society
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• v.35 no.1
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• pp.35-38
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• 2014

Herein, we report on the preparation of red fluorescent Si nanoparticles stabilized with styrene. Nano-sized Si particles emit fluorescence under UV excitation, which could be used to open up new applications in the fields of optics and semi-conductor research. Unfortunately, conventional methods for the preparation of red fluorescent Si nanoparticles suffer from the lack of a fully-established standard synthesis protocol. A common initial approach during the preparation of semi-conductors is the etching of crystalline Si wafers in a HF/ethanol/$H_2O$ bath, which provides a uniformly-etched surface of nanopores amenable for further nano-sized modifications via tuning of various parameters. Subsequent sonication of the etched surface crumbles the pores on the wafer, resulting in the dispersion of particles into the solution. In this study, we use styrene to occupy these platforms to stabilize the surface. We determine that the liberated silicon particles in ethanol solution interact with styrene, resulting in the substitution of Si-H bonds with those of Si-C as determined via UV photo-catalysis. The synthesized styrene-coated Si nanoparticles exhibit a stable, bright, red fluorescence under excitation with a 365 nm UV light, and yield approximately 100 mg per wafer with a synthesis time of 2 h. We believe this protocol could be further expanded as a cost-effective and high-throughput standard method in the preparation of red fluorescent Si nanoparticles.