• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.2
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• pp.330-336
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• 2007

A single pixel photon counting type image sensor which is applicable for medical diagnosis with digitally obtained image and industrial purpose has tern designed with $0.18{\mu}m$ triple-well CMOS process. The designed single pixel for readout chip is able to be operated by single supply voltage to simplify digital X-ray image sensor module and a preamplifier which is consist of folded cascode CMOS operational amplifier has been designed to enlarge signal voltage(${\Delta}Vs$), the output voltage of preamplifier. And an externally tunable threshold voltage generator circuit which generates threshold voltage in the readout chip has been newly proposed against the conventional external threshold voltage supply. In addition, A dark current compensation circuit for reducing dark current noise from photo diode is proposed and 15bit LFSR(Linear Feedback Shift Resister) Counter which is able to have high counting frequency and small layout area is designed.

• Rapid Communication in Photoscience
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• v.5 no.2
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• pp.21-26
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• 2016

Many kinds of fluorescent polypyridine compounds including bpy and dppz derivatives are described in understanding the recent current of fluorescent materials having photofuctionality. Those polypyridine compounds have the photofunctionality such as the fluorescence recognition and/or photo-switching. Furthermore, those compounds are applicated for the construction of long ranged photoinduced electron/energy transfer system. Various fluorescent ${\pi}-conjugation$ systems connected by amide or imine bond as well as the simple fluorescent bpy derivatives are introduced in this review paper.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.359-359
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• 2011

This study reports the H2S gas sensing properties of CuO / ZnO nano-hetero structure bundle and the investigation of gas sensing mechanism. The 1-Dimensional ZnO nano-structure was synthesized by hydrothermal method and CuO / ZnO nano-heterostructures were prepared by photo chemical reaction. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) spectra confirmed a well-crystalline ZnO of hexagonal structure. In order to improve the H2S gas sensing properties, simple type of gas sensor was fabricated with ZnO nano-heterostructures, which were prepared by photo-chemical deposition of CuO on the ZnO nanorods bundle. The furnace type gas sensing system was used to characterize sensing properties with diluted H2S gas (50 ppm) balanced air at various operating temperature up to 500$^{\circ}C$. The H2S gas response of ZnO nanorods bundle sensor increased with increasing temperature, which is thought to be due to chemical reaction of nanorods with gas molecules. Through analysis of X-ray photoelectron spectroscopy (XPS), the sensing mechanism of ZnO nanorods bundle sensor was explained by well-known surface reaction between ZnO surface atoms and hydrogen sulfide. However at high sensing temperature, chemical conversion of ZnO nanorods becomes a dominant sensing mechanism in current system. Photo-chemically fabricated CuO/ZnO heteronanostructures show higher gas response and higher current level than ZnO nanorods bundle. The gas sensing mechanism of the heteronanostructure can be explained by the chemical conversion of sensing material through the reaction with H2S gas.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.4
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• pp.161-168
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• 2001

Organic thin film transitors(TFTs) are of interest for use in broad area electronic applications. For example, in active matrix liquid crystal displays(AMLCDs), organic TFTs would allow the use of inexpensive, light-weight, flexible, and mechanically rugged plastic substrates as an alternative to the glass substrates needed for commonly used hydrogenated amorphous silicon(a-Si:H). Recently pentacene TFTs with carrier field effect, mobility as large as 2 $cm^2V^{-1}s^{-1}$ have been reported for TFTs fabricated on silicon substrates, and it is higher than that of a-Si:H. But these TFTs are fabricated on silicon wafer and $SiO_2$ was used as a gate insulator. $SiO_2$ deposition process requires a high insulator which is polyimide and photo acryl. We investigated trasfer and output characteristics of the thin film transistors having active layer of pentacene. We calculated field effect mobility and on/off ratio from transfer characteristics of pentacene thin film transistor, and measured IR absorption spectrum of polymide used as the gate dielectric layer. It was found that using the photo acryl as a gate insulator, threshold voltage decreased from -12.5 V to -7 V, field effect mobility increased from 0.012 $cm^2V^{-1}s^{-1}$ to 0.039 $cm^2V^{-1}s^{-1}$ , and on/off current ratio increased from $10^5\;to\;10^6$. It seems that TFTs using photo acryl gate insulator is apt to form channel than TFTs using polyimide gate insulator.

• 전자공학회논문지 IE
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• v.46 no.4
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• pp.8-15
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• 2009

In this paper, we are indicated CMOS Image sensor circuit SPICE analysis for the Photo Diode and pixel Modeling. We get a characteristic of the photoelectric current using a device simulator Medici and develop the Photodiode model for applying a SPICE simulation. For verifying the result, We compared the result of SPICE simulation with the result of mixed mode simulation about the testing circuit structure consisted photodiode and NMOS.

• Solar Energy
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• v.9 no.1
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• pp.14-21
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• 1989

Preparation of $TiO_2$ Film by the Dip-coating Method and its Application to photo-electrochemical Electrodes. $TiO_2$ film of n-type semiconductor has been of great interest as a material for solar energy conversion. For its practical application, the dip-coating method has been applied to prepare $TiO_2$ (anatase) film on the nesa glass substrate. Films up to about $1.8{\mu}m$ in thickness can be obtained by repeating the operation, dipping $\to$ pulling up $\to$ drying $\to$ heating at $500^{\circ}C$ for 10 minute. Heating temperature at $500^{\circ}C$ was adopted to convert $TiO_2$ gels into $TiO_2$ crystalline films. The $TiO_2$ films showed the maximum photocurrent ($14mA/cm^2$) at the film thickness of about $1.8{\mu}m$. It was also found that the additional heating at $500^{\circ}C$ for about 20 minutes improved remarkably the photo current of the $TiO_2$ films.

• Current Photovoltaic Research
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• v.6 no.1
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• pp.12-16
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• 2018

The interest in perovskite solar cells has been skyrocketed owing to their rapid progress in efficiency in recent years. Here, we report the effect of non-stoichiometry in the methylammonium lead trihalide ($MAPbI_3$) precursors used in a solution process with different MAI : $PbI_2$ ratios of 1 : 0.96, 1 : 1.10, 1 : 1.15, and 1:1.20. With an increase in the $PbI_2$ content, the $PbI_2$ secondary phase was found to form at grain boundary region of perovskite thin films, as evidenced by X-ray diffraction (XRD) and scanning electron microscopy (SEM). In terms of device performance, open-circuit voltage in particular is significantly improved with increasing the molar ratio of $PbI_2$, which is possibly ascribed to the reduction in recombination sites at grain boundary of perovskite and hence the prolonged life time of light-generated carriers according to the reported. As a result, the $PbI_2-excess$ devices exhibited a higher power conversion efficiency compared to the MAI-excess ones.

• Bulletin of the Korean Chemical Society
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• v.28 no.8
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• pp.1311-1316
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• 2007

To develop photo-sensitizers for dye-sensitized solar cells (DSCs) used in harvesting sunlight and transferring solar energy into electricity, we synthesize novel Ru(II) polypyridyl dyes and describe their characterization. We also investigate the photo-electrochemical properties of DSCs using these sensitizers. New dyes contain chromophore unit of dafo (4,5-diazafluoren-9-one) or phen-dione (1,10-phenanthroline-5,6-dione) instead of the nonchromophoric donor unit of thiocyanato ligand in cis-[RuII(dcbpy)2(NCS)2] (dcbpy = 4,4'-dicarboxy- 2,2'-bipyridine) coded as N3 dye. For example, the photovoltaic data of DSCs using [RuII(dcbpy)2(dafo)](CN)2 as a sensitizer show 6.85 mA/cm2, 0.70 V, 0.58 and 2.82% in short-circuit current (Jsc ), open-circuit voltage (Voc), fill factor (FF) and power conversion efficiency (Eff), which can be compared with those of 7.90 mA/ cm2, 0.70 V, 0.53 and 3.03% for N3 dye. With the same chelating ligand directly bonded to the Ru metal in the complex, the CN ligand increases the Jsc value by double, compared to the SCN ligand. The extra binding ability in these new dyes makes them more resistant against ligand loss and photo-induced isomerization within octahedral geometry.

• Journal of Fashion Business
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• v.21 no.6
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• pp.122-138
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• 2017

Shopping malls in Korea have grown in size and number, and their one-stop convenience has expanded to include various retail stores, service outlets, and entertainment providers. This study closely examines the shoppers' experience in a shopping mall. Using the photo elicitation interview (PEI) method, this study aims to provide deeper understanding of the subjective perceptions and context of shopping mall users. Ten shopping mall users participated in this study. They visited a shopping mall and took photos from their points of view about the shopping experience, and later participated in a personal interview. Convenience, excitement, relaxation, and socialization are the major themes of a pleasant shopping mall experience. Crowdedness and ineffective store design are the major themes of an unpleasant shopping mall experience. Core contents of each pleasant and unpleasant theme are presented. Given the current retail environment where shopping malls are continuously expanding, understanding the behavior and perception of consumers related to shopping malls is important in designing and providing a compelling experience in shopping malls.

• Transactions on Electrical and Electronic Materials
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• v.17 no.3
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• pp.134-138
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• 2016

The fullerene solar cells are becoming a feasible choice due to the advanced developments in donor materials and improved fabrication techniques of devices. Recently, sufficient optimization and improvements in the processing techniques like incorporation of solvent vapor annealing (SVA) with additives in solvents has become a major cause of prominent improvements in the performance of organic solar cell-based devices . On the other hand, the challenge of reduced open circuit voltage (V_oc) remains. This study presents an approach for significant performance improvement of overall device based on organic small molecular solar cells (SMSCs) by following a two step technique that comprises thermal annealing (TA) and SVA (abbreviated as SVA+TA). In case of exclusive use of SVA, reduction in V_oc can be eliminated in an effective way. The characteristics of charge carriers can be determined by the measurement of transient photo-voltage (TPV) and transient photo-current (TPC) that determines the scope for improvement in the performance of device by two step annealing. The recovery of reduced V_oc is linked with the necessary change in the dynamics of charge that lead to increased overall performance of device. Moreover, SVA and TA complement each other; therefore, two step annealing technique is an appropriate way to simultaneously improve the parameters such as V_oc, fill factor (FF), short circuit current density (J_sc) and PCE of small molecular solar cells.