• Transactions on Electrical and Electronic Materials
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• v.8 no.3
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• pp.135-138
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• 2007

In this study, we investigated the electro-optical (EO) characteristic of fringe-field switching (FFS) mode cell by the two kinds of ultraviolet (UV) alignment method on the organic thin film (polyimide: PI). The suitable organic layers for FFS cell and the aligning capabilities of nematic liquid crystal (NLC) using the in-situ photoalignment method were studied; Disclination is observed after conventional photoalignment method for 1h, and in-situ photoalignment method for 1h. Monodomain alignment of the NLC can be observed via insitu photo alignment method for 2 h and 3 h. It is considered that NLC alignment is due to photo-depolymerization of the polymer with oblique non-polarized UV irradiation on PI surface. An unstable V-T curve of UV-aligned FFS-LCD with conventional photoalignment method can be achieved. However, a stable V-T curve of UV-aligned FFS-LCD with in-situ photoalignment method (1 h), and V-T curve of UV-aligned FFS-LCD with in-situ photo alignment method was much stable comparing with that of other UV-aligned FFSLCD's. As a result, more stable EO performance of UV-aligned FFS-LCD with in-situ photoalignment method for 3h is obtained than that of the other UV-aligned FFS-LCD's.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.170-173
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• 2007

Cruciform conjugated molecule, 4(DP3T)-benzene bearing terthiophene moieties has been synthesized through Horner-Emmons Reaction using 5-dodecyl-5"-aldehyde-[2,2';5',2"] terthiophene as dendrons and octaethyl benzene- 1,2,4,5-tetrayltetrakis(methylene)tetraphosphonate as the core unit; this molecule has been fully characterized. The terthiophene-based molecule exhibits good solubility in common organic solvents and good self-film forming property. They are intrinsically crystalline as they exhibit well-defined X-ray diffraction patterns from uniform orientations of molecules. Thus, intermolecular interaction can be enhanced to affect the carrier transport phenomena after annealing at $148^{\circ}C$. The semiconducting property of 4(DP3T)-benzene have been evaluated in organic field-effect transistors. 4(DP3T)-benzene exhibit carrier mobility as high as $(6.6{\pm}0.5)$ ${\times}$ $10^{-6}cm^2V^{-1}s^{-1}$.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.472-475
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• 2005

The electrical performances of liquid crystal (LC) cells with chloromethylated polyimide (CMPI) alignment layers were investigated. The CMPI layer was previously reported as a multifunctional layer that does role of LC alignment and planarization layer as well as photo-alignment material with high photosensitivity and excellent thermal stability. The capacitance-voltage (C-V) characteristics of LC cells with CMPI alignment layers were measured. Mechanical rubbing of the CMPI layer did not generate much difference in residual DC when compared to commercial PI. However, the LC cell with photo-oxidation CMPI layer shows a high residual DC value and a corresponding low voltage holding ratio (VHR) due to the photo-induced ionic charges on the alignment layer.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.26.1-26.1
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• 2011

We investigated the atomic layer deposition (ALD) process for nitrogen doped ZnO and the application for n-ZnO : N/p-Si (NW) coaxial hetero-junction photodetectors. ALD ZnO:N was deposited using diethylzinc (DEZ) and diluted $NH_4OH$ at $150^{\circ}C$ of substrate temperature. About 100~300 nm diameter and 5 um length of Si nanowires array were prepared using electroless etching technique in 0.108 g of $AgNO_3$ melted 20 ml HF liquid at $75^{\circ}C$. TEM images showed ZnO were deposited on densely packed SiNW structure achieving extraordinary conformality. When UV (360 nm) light was illuminated on n-ZnO:N/p-SiNW, I-V curve showed about three times larger photocurrent generation than film structure at 10 V reverse bias. Especially, at 660 nm wave length, the coaxial structure has 90.8% of external quantum efficiency (EQE) and 0.573 A/W of responsivity.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.7 no.2
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• pp.59-65
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• 1982

In this paper, the CdS single crystal, which was grown as piper-polish method, was Ion-bombarded with Sb and In, and the thermally stimulated current of the spot that was Ionbombarded was measured. In the sample which was individually bombarded by Sb and In, the over-lapping peak was found, this over lapping peak was separated, by the method of thermal cleaning, showing the trap levels of 0.25(eV) and 0.31(eV) at the temperature of 147(K) and 181(K). While the spot is being cooled down and excited with photolight at the same time, the trap level 0.25(eV) disappeared and the new trap level of 0.85(eV) appeared. It can be said that the better photo-conductive crystals, the T.S.C is better measured.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.5
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• pp.803-807
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• 2008

A making process of DSC(dye sensitized solar cell) was presented. In general, Photo electrodes of DSC was made by using colloid paste of nano $TiO_2$ and processing of Doctor-blade printing and high temperature sintering for porous structure. These methods lead to cracks on $TiO_2$ surface and ununiform of $TiO_2$ thickness. This phenomenon is one factor that makes low efficiency to cells. After $TiO_2$ printing on TCO glass, a physical vibration was adapted for reducing ununiform of $TiO_2$ thickness. And a thermal treatment at low temperature(under $75^{\circ}C$) was adapted for reducing cracks on $TiO_2$ surface. In this paper, we have designed and manufactured an ultrasonic circuit (100W, frequency and duty variable) and a thermal equipment. Then, we have optimized forcing time, frequency and duty of ultrasonic irradiation and thermal heating for surface treatment of photo-electrode of DSC. In I-V characteristic test of DSC, ultrasonic and thermal treated DSC shows 19% improved its efficiency against monolithic DSC. And it shows stability of light-harvesting from drastically change of light irradiation test.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.36-38
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• 2001

A basic structure of 2500V-4500V reverse-conducting GCT (RC-GCT) is given in this paper. The punch-through type (PT) is adopted for narrow N-base with high resistivity so that the fast turn-off and low on-state voltage can be achieved. The photo mask design was made upon the both turn-off performance and solution of separation between GCT and integrated freewheeling diode (FWD) part. The turn-on and turn-off characteristics for reserve-conducting gate commutated thyristors (RC-GCTs) were investigated by ISE simulation. Additionally, the local carrier lifetime control by proton irradiation was adopted so as not only to obtain the reduction of turn-off losses of GCT but also to reach a soft reverse recovering characteristics of FWD

• Korean Chemical Engineering Research
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• v.48 no.6
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• pp.737-740
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• 2010

High leakage current and threshold voltage shift(${\Delta}Vth$) are demerits of a-Si:H TFT. These characteristics are influenced by gate insulator and active layer film quality, surface roughness, and process conditions. The purpose of this investigation is to improve off current($I_{off}$) and ${\Delta}V_{th}$ characteristics. Nitrogen-rich deposition condition was applied to gate insulator, and hydrogen-rich deposition condition was applied to active layer to reduce electron trap site and improve film density. $I_{off}$ improved from 1.01 pA to 0.18 pA at $65^{\circ}C$, and ${\Delta}V_{th}$ improved from -1.89 V to 1.22 V.

• Biomolecules & Therapeutics
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• v.2 no.1
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• pp.28-33
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• 1994

In order to obtain insight into the repair mechanism of DNA containing thymine photo-dimer, the conformation of the duplex d(GCGGTTGGCG).d(CGCCAACCGC) with a thymine dimer incorporated has been studied by proton NMR. NOE data show that, although the local environment around the thymine dimer is altered, the gross structural changes are relatively small. T$_4$endonuclease V exhibited a conformational change on complex formation with DNA. This conformational change occurred around histidine 16 which was close to tyrosine 129 located in the aromatic segment (WYKYY) near the C-terminus. It is likely that the interaction between T$_4$endonuclease V and DNA is strong since the complex was not dissociated up to 1.6 M NaCl.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.85-86
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• 2006

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=19501 eV-(879{\times}10^{-4} eV/K)T^2/(T+250 K)$.