• Bulletin of the Korean Chemical Society
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• v.19 no.5
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• pp.575-579
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• 1998

The 77 K luminescence and excitation spectra, and 298 K infrared and absorption spectra of $cis-{\Alpha}-[Cr(trien)Cl_2]Cl{\cdot}H_2O$ (trien=triethylenetetramine) have been measured. Ligand field electronic transitions due to spin-allowed and spin-forbidden are assigned. The zero-phonon line in the excitation spectrum splits into two components by $198\; cm^{-1}$, and the large $^2E_g$ splitting can be reproduced by the modern ligand field theory. It is confirmed that nitrogen atoms of the trien ligand have a strong σ-donor character, but chloride ligand has weak σ- and π -donor properties toward chromium(III) ion.

• Korean Journal of Optics and Photonics
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• v.7 no.3
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• pp.227-231
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• 1996

The reflection spectrum of a $2H-PbI_2$ single crystal grown by vapour phase method were measured at 10 K near the fundamental absorption edge. The n= 1,2,3 Wannier exciton series and $A_{EP}$ reflection line were obtained from the reflection spectrum. Based on the 2nd phonon energy in the Raman spectrum, which is different from Nagamune's report, we suggest that $A_{EP}$ line is due to the bound state between the n=2 exciton and the 2nd phonon which surmise that this is LO phnon due to the second Raman process. The L-T splitting energy of n=1 exciton line was 6.56 meV and was consistent with the emission spectrum. The temperature dependence of the reflection spectrum showed that n=1 exciton peak was shifted to longer wavelength while, as the temperatre is raised, the sharpness of that with the increase of the L-T splitting energy decrease. From Wannier exiton series, the exciton binding energy and exciton radius was 30 meV and 14$\AA$, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.11
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• pp.7-13
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• 2004

Experimental results are presented for the degradation of 3 nm-thick gate oxide under -2.5V $\leq$ V$_{g}$ $\leq$-4.0V stress and 10$0^{\circ}C$ conditions using P and NMOSFETs that are annealed with hydrogen or deuterium gas at high-pressure (5 atm). The degradation mechanisms are highly dependent on stress conditions. For low gate voltage, hole-trapping is found to dominate the reliability of gate oxide both in P and NMOSFETs. With increasing gate voltage to V$_{g}$ =-4.0V, the degradation becomes dominated by electron-trapping in NMOSFETs, however, the generation rate of "hot" hole was very low, because most of tunneling electrons experienced the phonon scattering before impact ionization at the Si interface. Statistical parameter variations as well as the gate leakage current depend on and are improved by high-pressure deuterium annealing, compared to corresponding hydrogen annealing. We therefore suggest that deuterium is effective in suppressing the generation of traps within the gate oxide. Our results therefore prove that hydrogen related processes are at the origin of the investigated oxide degradation.gradation.

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.560-565
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• 2003

M-doped (M=Al, Ni) ZnO thermoelectric materials were fully densified at low temperatures of 800∼1,000$^{\circ}C$ and their sintering characteristics and microstructural features were investigated. Electron microscopic analysis showed that the addition of NiO promoted tile formation of solid solution and caused actively grain growth. The addition of A1$_2$O$_3$ prevented the evaporation of pure ZnO at grain boundaries and suppressed the grain growth by the formation of secondary phase. In case of the addition of A1$_2$O$_3$ together with NiO, the specimen showed an excellent microstructure and also the SEM-EBSP (Electron Back-scattered Diffraction Pattern) analysis confirmed that it shows a superior grain boundary distribution to the others specimens. These microstructural characteristics induced by the addition of A1$_2$O$_3$ together with NiO may increase the electrical conductivity by the increase in carrier concentration and decrease the thermal conductivity by the phonon scattering effect and, consequently, improve the thermoelectric property.

• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.111-116
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• 2000

700nm red emission(3F3longrightarrow3H6) in Tm3+ ion with 800 nm(3H6longrightarrow3H4) excitation via upconversion process has been reported only in host materials which have low phonon energies such as halide crystals. However, we observed 700nm and 480nm(1G4longrightarrow3H6) upconverted emission with 800nm excitation in several oxide glasses which has never reported. With spectroscopic analyses and lifetime measurements of each nergy level of Tm3+ ion doped in various oxide glasses, following mechanisms are suggested. For red upconversion, upconversion mechanism changed with Tm3+ concentration. While direct excitation up to 3F3 level via anti-Stokes excitation was dominated at low concentration, two-step excitation via 3H6longrightarrow3H4 and 3F4longrightarrow3F3 transitions was dominated at high concentration. For blue upconversion, two step excitation mechanism up to 1G4 level was suggested as follows : electrons are exciated up to 3H5 with direct excitation with pumping light up to 3H4 followed by multiphonon relaxation, and then additional reabsorption of pumping light excites electrons up to 1G4.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.93-93
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• 2003

Photoluminescence(PL) properties of Silicon nanocrystals (nc-Si) as a function of temperature is reported to consider the mechanism of PL. Nc-Si has been made by $Si^+$ ion-implantation into thermal $SiO_2$ and subsequent annealing. And after gold had been diffused at the same samples above, the resultant PL spectra has been compared to the PL spectra from the non-gold doped nc-Si. PL peak energy variation from nc-Si is same with the variation of energy bandgap of bulk silicon as temperature changes from 6 K to room temperature. This result may mean nc-Si is still indirect transition material like bulk silicon. Gold doped nc-Si reveals short peak wavelength of PL spectrum than gold undoped one. PL peak shift through gold doing process shows clearly the PL mechanism is not from defect or interface states. PL intensity increases from 6K to a certain temperature and then decrease to room temperature. This characteristic with temperature shows that phonon have a role for the luminescence as theory explains that electron and hole can be recombined radiatively by phonon's assist in nc-Si, which is almost impossible in bulk silicon. Therefore luminescence is observed in nc-Si constructed less than a few of unit cell and the peak energy of luminescence can be higher than the bulk bandgap energy by the bandgap widening effect occurs in nanostructure.

• Bulletin of the Korean Chemical Society
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• v.34 no.11
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• pp.3335-3339
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• 2013

Boron-doped ZnO (BZO) nanorods were grown on quartz substrates using hydrothermal synthesis, and the temperature-dependence of their photoluminescence (PL) was measured in order to investigate the origins of their PL properties. In the UV range, near-band-edge emission (NBE) was observed from 3.1 to 3.4 eV; this was attributed to various transitions including recombination of free excitons and their longitudinal optical (LO) phonon replicas, and donor-acceptor pair (DAP) recombination, depending on the local lattice configuration and the presence of defects. At a temperature of 12 K, the NBE produces seven peaks at 3.386, 3.368, 3.337, 3.296, 3.258, 3.184, and 3.106 eV. These peaks are, respectively, assigned to free excitons (FX), neutral-donor bound excitons ($D^{\circ}X$), and the first LO phonon replicas of $D^{\circ}X$, DAP, DAP-1LO, DAP-2LO, and DAP-3LO. The peak position of the FX and DAP were also fitted to Varshni's empirical formula for the variation in the band gap energy with temperature. The activation energy of FX was about ~70 meV, while that of DAP was about ~38 meV. We also discuss the low temperature PL near 2.251 eV, related to structural defects.

• Progress in Superconductivity and Cryogenics
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• v.21 no.4
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• pp.9-12
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• 2019

We performed Raman spectroscopy on two different over-doped Bi₂Sr₂CaCu₂O_8+x (BSCCO), of which superconducting transition temperatures are 89 K and 77 K. Line-shape analysis of the Raman-spectrum was done, focused on B_1g bond buckling mode which have drawn a lot of attention, since photoemission studies showed an evidence for strong coupling between the mode and electron. The line-shapes show asymmetry and are well fitted by the Fano line-shape formula. Remarkably, we found that the peak line-widths from B_1g bond buckling mode in BSCCO show much broader than those in YBa₂Cu₃O_7-x. The broad line width can be attributed to the superstructure modulation of BSCCO. Our results imply that B_1g bond buckling mode may have close relation to the origin of superconductivity or to boosting the superconducting transition temperature in BSCCO.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.25 no.4
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• pp.301-305
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• 2012

In this work the mechanical behaviors of GaN nanowires are analyzed during tension, compression, and unloading deformations. The thermal conductivity of the nanowires at each deformed state is evaluated using an equilibrium Green-Kubo approach. Under tensile loading, the [0001]-oriented nanowires with hexagonal cross-sections undergo a phase transformation from wurtzite to a tetragonal structure. The phase transformation is not observed under compressive loading. The thermal conductivity decreases on going from compressive strains to tensile strains. The strain dependence of the thermal conductivity results from the relaxation time of phonon. A reverse transformation from the tetragonal structure to the wurtzite structure is observed during unloading. The thermal conductivities in the intermediate states are lower than the conductivity in the wurtzite structure at same strain. Such differences in the thermal conductivity between different atomic structures are mainly due to changes in the group velocity of phonon.

• Journal of the Mineralogical Society of Korea
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• v.22 no.4
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• pp.407-415
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• 2009

The change of the nitrogen-related centers and the color change of electron beam irradiated type Ia natural diamonds were studied. The irradiation of diamond with high-energy electron beam creates lattice defects which are neutral single vacancy $V^0$. It increased with increasing electron dose density. The B aggregation seems to produce vacancies more easily than the A aggregation, because diamonds with more B aggregation have more platelets, which are sufficient breakable size by electron beam. Greenish blue color of irradiated diamond is changed to darker with increasing electron dose density. GR1 centers with a zero-phonon line at 741 nm and phonon sidebands make transmit visible light at 530 nm and it moves to 500 nm with higher intensity of GR1 centers.