• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.15 no.2
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• pp.137-143
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• 2015

During the past 30 years, DRAM has been used for the reasons of economic efficiency of the production. Recently, PRAM has been emerged to overcome the shortcomings of DRAM. In this paper, we propose a technique that can reduce energy consumption by use of a narrow values to the write operation of PRAM. For this purpose, we describe the data compression method using a narrow value and the architecture of PRAM, We also experiment under the Simplescalar 3.0e simulator and SPEC CPU2000 benchmark environments. According to the experiments, the data hit rate of PRAM was increased by 39.4% to 67.7% and energy consumption was reduced by 9.2%. In order to use the proposed technique, it requires 3.12% of space overhead per word, and some additional hardware modules.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1272-1273
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• 2008

PRAM(Phase change access memory) has desirable characteristics including high speed, low cost, low power, and simple process. PRAM is based on the reversible phase transition between resistive amorphous and conductive crystalline states of chalcogenide. However, PRAM needs high reset current for operation. PRAM have to reduce reset current for high density and competitiveness. Therefore, we have investigated the reset current of PRAM with top electrode contact hole size using 3-D finite element analysis tool in this paper.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.243.1-243.1
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• 2011

We demonstrate a facile and robust layer-by-layer (LbL) assembly method for the fabrication of nonvolatile resistive switching memory (NRSM) devices based on superparamagnetic nanocomposite multilayers, which allows the highly enhanced magnetic and resistive switching memory properties as well as the dense and homogeneous adsorption of nanoparticles, via nucleophilic substitution reaction (NSR) in nonpolar solvent. Superparamagnetic iron oxide nanoparticles (MP) of about size 12 nm (or 7 nm) synthesized with oleic acid (OA) in nonpolar solvent could be converted into 2-bromo-2-methylpropionic acid (BMPA)-stabilized iron oxide nanoparticles (BMPA-MP) by stabilizer exchange without change of solvent polarity. In addition, bromo groups of BMPA-MP could be connected with highly branched amine groups of poly (amidoamine) dendrimer (PAMA) in ethanol by NSR of between bromo and amine groups. Based on these results, nanocomposite multilayers using LbL assembly could be fabricated in nonpolar solvent by NSR of between BMPA-MP and PAMA without any additional phase transfer of MP for conventional LbL assembly. These resulting superparamagnetic multilayers displayed highly improved magnetic and resistive switching memory properties in comparison with those of multilayers based on water-dispersible MP. Furthermore, NRSM devices, which were fabricated by LbL assembly method under atmospheric conditions, exhibited the outstanding performances such as long-term stability, fast switching speed and high ON/OFF ratio comparable to that of conventional inorganic NRSM devices produced by vacuum deposition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.115-118
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semoconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline stale are assigned to binary states. AST(AsSbTe) used to phase change material by applying electical pulses. Thickness of AST chalcogenide thin film have about 100nm. Electrodes are made of ITO and Al. $T_c$(Crystallization temperature) of AST system is lower than that of the GST(GeSbTe) system, so that the current pulse width of crystallization process can be decreased.

• Transactions of the Society of Information Storage Systems
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• v.1 no.2
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• pp.132-136
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• 2005

It is widely accepted that the reading mechanism of Super-RENS(super-resolution near field structure) and Super-ROM(super-resolution read only memory) is closely related with non-linear temperature dependent material properties such as refractive indices, phase change. Furthermore, the dynamic change of the temperature distribution also an essential part of reading mechanism of Super-RENS/ROM. Therefore, the knowledge of the temperature distribution as a function a time is one of the important keys to reveal the physics of reading mechanism in Super-RENS/ROM. We calculated time-dependent temperature distribution in a 3-dimensional Super-ROM disk structure when moving laser beam is irradiated. With a help of commercial software FEMLAB which employed finite element method, we simulated the temperature distribution of ROM structure whose pit diameter is 120-nm with 50-nm depth. Energy absorption by moving laser irradiation, time variations of heat transfer processes, heat fluxes, heat transfer ratios, and temperature distributions of the complicate 3-dimensional ROM structure have been obtained.

• Korean Journal of Culture and Social Issue
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• v.20 no.4
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• pp.347-364
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• 2014

The present study was conducted to investigate how emotional expression change, test delay, and background influence on face recognition. In experiment 1, participants were presented with negative faces at study phase and administered for standard old-new recognition test including targets of negative and neutral expression for the same faces. In experiment 2, participants were studied negative faces and tested by old-new face recognition test with targets of negative and positive faces. In experiment 3, participants were presented with neutral faces at study phase and had to identify the same faces with no regard for negative and neutral expression at face recognition test. In all three experiments, participants were assigned into either immediate test or delay test, and target faces were presented in both white and black background. Results of experiments 1 and 2 indicated higher rates for negative faces than neutral or positive faces. Facial expression consistency enhanced face recognition memory. In experiment 3, the superiority of facial expression consistency were demonstrated by higher rates for neutral faces at recognition test. If facial expressions were consistent across encoding and retrieval, memory performance on face recognition were enhanced in all three experiments. And the effect of facial expression change have different effects on background conditions. The findings suggest that facial expression change make face identification hard, and time and background also affect on face recognition.

• Journal of the Korean Society for Heat Treatment
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• v.22 no.2
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• pp.101-107
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• 2009

Effect of isochronic aging on transformation behavior of Ti-50.85at%Ni alloy were investigated by differential scanning calorimeter (DSC). The martensitic transformation temperature increases with increasing annealing temperature until reaching a maximum, and then decreases with further increasing annealing temperature. This can be rationalized by interaction between the distribution of $Ti_3Ni_4$ precipitates and Ni content in the matrix. The R-phase transformation temperature increases with increasing annealing temperature until reaching a maximum, and then decreases with a further increase of annealing temperature. This is attributed to the change of Ni content in the matrix caused by precipitation of $Ti_3Ni_4$. The occurrence of the multiple-stage martensitic and R-phase transformation is attributed to precipitation-induced inhomogeneity of the matrix, both in terms of composition and of internal stress fields.

• Journal of the Korean Society for Heat Treatment
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• v.22 no.6
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• pp.368-374
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• 2009

Nickel titanium shape memory alloys (NiTi) have been investigated for applications in the biomedical industry. However, little is known about the influences of surface modifications on the propertise of these alloys. The effect of electropolishing and heat treatments was found to exhibit significant surface roughness. Change of phase was B2, r-phase and B19' by heat treatments. In this study, effect of the electropolishing conditions on surface roughness is investigated in Ni-Ti alloys (Nitinol). Variation in phases with heat treatment temperature is investigated for a Ni-Ti alloy by X-ray diffraction and DSC. Characteristic of the microstructure have been observed by SEM. Surface roughness have been measured by AFM. The results clearly show that significant different in surface property to heat treated at $500^{\circ}C$ (R-phase). $TiO_2$ phases preciritated all of the specimens. It is not good effect of surface roughness because made to surface relief. The surface roughness appears to be important in the property of Ni-Ti alloys for biomedical applications.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.23-29
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• 2020

Electrochromic (EC) device is an element whose transmittance is changed by electrical energy. Coloring and decoloring states can be easily controlled and thus used in buildings and automobiles for energy saving. There exist several types of EC devices; EC using electrolytes, polymer dispersed liquid crystal (PDLC), and suspended particle device (SPD) using polarized molecules. However, these devices involve solutions such as electrolytes and liquid crystals, limiting their applications in high temperature environments. In this study, we have studied all-solid-state EC device based on Tin(IV) oxide (SnO₂). A coloring phase is achieved when electrons are accumulated in the ultraviolet (UV)-treated SnO₂ layer, whereas a decoloring mode is obtained when electrons are empty there. The UV treatment of SnO₂ layer brings in a number of localized states in the bandgap, which traps electrons near the conduction band. The SnO₂-based EC device shows a transmittance of 70.7% in the decoloring mode and 41% in the coloring mode at a voltage of 2.5 V. We have achieved a transmittance change as large as 29.7% at the wavelength of 550 nm. It also exhibits fast and stable driving characteristics, which have been demonstrated by the cyclic experiments of coloration and decoloration. It has also showed the memory effects induced by the insulating layer of titanium dioxide (TiO₂) and silicone (Si).

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.348-348
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• 2012

휴대용 저장매체에서부터 solid state disk와 같은 고속 시스템 저장 매체 까지 플래시 메모리의 활용도가 급속도로 커지고 있다. 이에 플래시 메모리에 대한 연구 또한 활발히 진행 되고 있다. 현재 다결정 실리콘을 전하 주입 층으로 사용하는 기존의 플래시 메모리는 20 nm 급 까지 비례 축소되어 활용되고 있다. 하지만 20 nm 이하 크기의 소자에서는 과도한 누설전류와 구동전압의 불안정, 큰 간섭현상으로 인한 성능저하와 같은 많은 문제점에 봉착해 있다. 이를 해결하기 위해 FinFET, Vertical 3-dimensional memory, MRAM (Magnetoresistive Random Access Memory), PRAM(Phase-change Memory)과 같은 차세대 메모리 소자에 대한 연구가 활발히 진행되고 있다. 본 연구에서는 차세대 메모리 구조로 주목 받고 있는 FinFET 구조를 가진 플래시 메모리에서 fin 의 채널영역의 도핑 농도 변화에 의한 20 nm 이하의 게이트 크기를 가지는 소자의 전기적 특성과 프로그램 특성을 3차원 시뮬레이션을 통해 계산하였다. 본 연구에서는 FinFET 구조를 가진 플래시 메모리의 채널이 형성되는 fin의 윗부분도핑농도의 변화에 의한 전기적 특성과 프로그램 특성을 계산하였다. 본 계산에 사용된 구조는 게이트의 크기, 핀의 두께와 높이는 18, 15 그리고 28 nm이다. 기판은 Boron으로 $1{\times}10^{18}cm^{-3}$ 농도로 도핑 하였으며, 소스와 드레인, 다결정 실리콘 게이트는 $1{\times}10^{20}cm^{-3}$ 농도로 Phosphorus로 도핑 하였다. 채널이 형성되는 fin의 윗부분의 도핑농도를 $1{\times}10^{18}cm^{-3}$ 에서 $1{\times}5^{19}cm^{-3}$ 까지 변화 시키면서 각 농도에 대한 프로그램 특성과 전기적 특성을 계산하였다. 전류-전압 곡선과 전자주입 층에 주입되는 전하의 양을 통해 특성을 확인하였고 각 구조에서의 채널과 전자 주입 층의 전자의 농도, 전기장, 전기적 위치 에너지와 공핍 영역의 분포를 통해 분석하였다. 채널의 도핑농도 변화로 인한 fin 영역의 공핍 영역의 분포 변화로 인해 전기적 특성과 프로그램 특성이 변화함을 확인하였다.