• 설비공학논문집
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• 제13권11호
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• pp.1097-1105
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• 2001

The purpose of this study is to investigate the propriety of TMA clathrate as a cold storage medium. Particularly, this is to examine the extent of subcooling improvement when the additives are added to the TMA clathrate, because water used cold storage material has low phase change temperature and subcooling. This study has been analysed and compared with TMA 30 wt% clathrate how phase change temperature, subcooling and specific heat in the various concentrations are changed. This results view to be improved phase change temperature and subcooling of TMA 30 wt% as a cold storage medium, when it had some additive. Additional1y, it is found that the additive must be controlled under available solution limit and study for new additive must be lasted to know its effect.

• 설비공학논문집
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• 제13권12호
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• pp.1223-1229
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• 2001

Though conventional calorimetry methods such as differential scanning calorimetry (DSC) and differential thermal analysis (DTA) are used generally in measuring heat of fusion, T-history method has the advantages of a simple experimental apparatus and no requirements of sampling process, which is particularly useful for measuring thermal properties of inhomogeneous phase change materials (PCMs) in sealed tubes. However, random criteria (a degree of supercooling) used in selecting the range of latent heat release and neglecting sensible heat during the phase change process can cause significant errors in determining the heat of fusion. In the present study, it was shown that a 40% discrepancy exists between the original T-history and the present methods when analyzing the same experimental data. As a result, a reasonable modification to the original T-history method is proposed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.106-107
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• 2007

A detailed investigation of cell structure and electrical characteristic in chalcogenide-based phase-change random access memory(PRAM) devices is presented. We used compound of Ge-Se-Te material for phase-change cell. Actually, the performance properties have been improved surprisingly then conventional Ge-Sb-Te. However, crystallization time was as long as ever for amorphization time. We conducted this experiment in order to solve that problem by doping-Sb with annealing.

• 한국안전학회지
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• 제15권3호
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• pp.14-22
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• 2000

A numerical analysis has been performed on the two-dimensional rectangular gallium melting problem using the enthalpy method. The major advantage of this method is that the physical domain is discretized with fixed grids without transforming variables and the interface conditions of phase change are accounted for the definition of suitable source terms in the governing equations. But in the fixed method, there is some ambiguity in defining the porosity constant which has no physical interpretation. If the velocity correction is included in the momentum equation, for the appropriate range of porosity constant, the realistic predictions are obtained. The object of the present work is to predict the phase change within the molten steel with thin riser slab using the modified enthalpy-porosity method. The computational procedures for predicting velocity and temperature are based on the finite volume method and the non-staggered grid system. The influence of natural convection on the melting process is considered. A comparison with the experimental results shows that the modified method is better than the previous one.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1335-1336
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• 2007

Among the emerging non-volatile memory technologies, phase change memories are the most attractive in terms of both performance and scalability perspectives. Phase-change random access memory(PRAM), compare with flash memory technologies, has advantages of high density, low cost, low consumption energy and fast response speed. However, PRAM device has disadvantages of set operation speed and reset operation power consumption. In this paper, we investigated scalability of $Ge_{1}Se_{1}Te_{2}$ chalcogenide material to improve its properties. As a result, reduction of phase change region have improved electrical properties of PRAM device.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.205-206
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• 2005

PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. Among the phase change materials, $Ge_2Sb_2Te_5$(GST) is very well known for its high optical contrast in the state of amorphous and crystalline. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the structural properties of GST thin films with bottom electrode were investigated for PRAM. The 100-nm thick GST films were deposited on TiN/Si and TiAlN/Si substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films, we performed x-ray diffraction (XRD) and atomic force microscopy (AFM).

• International Journal of Air-Conditioning and Refrigeration
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• 제11권1호
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• pp.32-39
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• 2003

Though conventional calorimetry methods such as differential scanning calorimetry and differential thermal analysis are used generally in measuring heat of fusion, T-history method has advantages of a simple experimental apparatus and no requirements of sampling process, which is particularly useful for measuring thermophyical properties of in-homogeneous phase change materials in sealed tubes. However, the degree of supercooling used in selecting a range of latent heat release and neglecting sensible heat during the phase change process can cause significant errors in determining the heat of fusion. In the present study, it was shown that a 40% discrepancy exists between the original T-history and the present methods when analyzing the same experimental data. As a result, a reasonable modification to the original T-history method is proposed.

• 한국산업융합학회 논문집
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• 제23권3호
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• pp.499-505
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• 2020

Capacitor-run single-phase induction motor is cheaper than motors that use permanent magnets and is widely used in home appliances and industries based on relatively high durability and productivity. It can also be operated by line. However speed cannot be controlled because the line frequency is free. In this paper we dealt pole change method one of the method controlling speed of capacitor-run single-phase induction motor. The conventional pole change method is difficult to improve the power and efficiency of the motor because the composition of the pole change device is complex and do not have enough area of the windings because of windings not used according to the driving conditions. In this paper, we proposed the pole change method that is used main windings and auxiliary windings at 4 poles operation and used auxiliary windings as compensation windings at 2 poles operation. The proposed method was verified through finite element analysis.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.226-226
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• 2010

Boron Nitride (BN) doped GeSbTe films were grown by the ion beam sputtering deposition (IBSD). The in-situ sheet resistance data and the x-ray diffraction patterns showed the crystallization is suppressed due to the BN incorporation. The phase change speed in BN doped GeSbTe films were investigated using the static tester equipped with nanosecond pulsed laser. The phase change speed for BN doped GST films become faster than the corresponding values for an undoped GST film. The Johnson-Mehl-Avrami(JMA) plot and Avrami coefficient for laser crystallization showed that the change in growth mode during the laser crystallization is a most important factor for the phase change speed in the BN doped GST films. The JMA results and the atomic force microscopy (AFM) images indicate that the origin of the change in the crystalline growth mode is due to an increase in the number of initial nucleation sites which is produced by the incorporated BN. In addition, the retension properties for the laser writing/erasing are remarkably improved in BN doped GeSbTe films owing to the stability of the incorporated BN.

• Structural Monitoring and Maintenance
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• 제3권4호
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• pp.335-347
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• 2016

One of major errors in flow rate measurement for two-phase flow using an Electrical Capacitance Sensor (ECS) concerns sensor sensitivity under temperature raise. The thermal effect on electrical capacitance sensor (ECS) system for air-water two-phase flow monitoring include sensor sensitivity, capacitance measurements, capacitance change and node potential distribution is reported in this paper. The rules of 12-electrode sensor parameters such as capacitance, capacitance change, and change rate of capacitance and sensitivity map the basis of Air-water two-phase flow permittivity distribution and temperature raise are discussed by ANSYS and MATLAB, which are combined to simulate sensor characteristic. The cross-sectional void fraction as a function of temperature is determined from the scripting capabilities in ANSYS simulation. The results show that the temperature raise had a detrimental effect on the electrodes sensitivity and sensitive domain of electrodes. The FE results are in excellent agreement with an experimental result available in the literature, thus validating the accuracy and reliability of the proposed flow rate measurement system.